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Vishay Siliconix SI4168DY-T1-GE3
- Part No.:
- SI4168DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4168DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 24A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:26,145
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Product details
Overview
SI4168DY-T1-GE3 from Vishay Siliconix is a N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, delivering 24 A continuous drain current at TC = 25 °C, 5.7 W power dissipation, and 5.7 mΩ RDS(on) at VGS = 10 V. It serves as a high-efficiency synchronous rectifier or main switch in notebook DC/DC converters.
For engineers reviewing the SI4168DY-T1-GE3 datasheet, SI4168DY-T1-GE3 pinout, SI4168DY-T1-GE3 application, or SI4168DY-T1-GE3 equivalent, key selection criteria include its 30 V VDS rating, 0.0057 Ω on-resistance at 10 V gate drive, 13.8 nC total gate charge at 4.5 V, SO-8 thermal performance (RthJA ≤ 50 °C/W), and halogen-free, lead-free compliance.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low RDS(on) and fast switching with controlled Qg/Qgd ratio. Its gate threshold voltage (1–3 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the 20 V VGS rating supports robust gate overvoltage margin.
The device integrates a body diode with 0.75–1.2 V forward voltage at 4.1 A and 25–50 ns reverse recovery time, enabling use in synchronous buck topologies without external Schottky diodes. Thermal design is supported by validated junction-to-foot (RthJF = 18–22 °C/W) and junction-to-ambient (RthJA = 35–50 °C/W) resistance values.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages |
| RDS(on) | 0.0057 Ω at VGS = 10 V - Enables <1.2 W conduction loss at 20 A in high-current power rails |
| ID (Continuous) | 24 A at TC = 25 °C - Supports high-current CPU/GPU VRMs on compact PCBs |
| Qg | 13.8 nC at VGS = 4.5 V - Optimized for efficient 3.3 V PWM controller drive with low switching loss |
| Package | SO-8 - Standard surface-mount footprint with 4 drain pins for enhanced thermal and current handling |
| Body Diode VSD | 0.75–1.2 V at IS = 4.1 A - Reduces freewheeling loss vs. discrete Schottky in synchronous rectification |
| trr / Qrr | 25–50 ns / 17–35 nC - Minimizes shoot-through risk and EMI during hard commutation |
Pinout & Package
SO-8 narrow-body package (JEDEC MS-012), 5.0 mm × 4.0 mm × 1.75 mm, with exposed drain paddle thermally connected to pins 1, 2, 3, and 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals reduce current density and thermal resistance to PCB copper |
| 5 | Gate (G) | Single gate input with 1.1–2.2 Ω internal gate resistance for controlled turn-on/off timing |
| 6, 7, 8 | Source (S) | Three-source configuration lowers source inductance and improves gate drive stability |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables 30 V rating with sub-6 mΩ RDS(on), outperforming planar MOSFETs in efficiency-critical notebook rails |
| 100 % Rg tested | Guarantees gate resistance between 1.1–2.2 Ω, ensuring consistent switching speed across production lots |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to 35 A avalanche current |
| Halogen-free & Pb-free | Meets IPC-1752A Class 3 material declarations and RoHS Directive 2011/65/EU compliance |
| SO-8 thermal optimization | Drain-connected pins and exposed paddle deliver 18–22 °C/W junction-to-foot resistance for direct heatsinking |
Applications
| Notebook CPU Voltage Regulator | GPU Core Power Delivery |
|---|---|
|
Use Scenario: High-frequency synchronous buck converter supplying 0.8–1.3 V to Intel/AMD mobile CPUs. IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 300–1000 kHz with 3.3 V gate drive. Use Value: 0.0057 Ω RDS(on) limits conduction loss to <2.3 W at 20 A, supporting >92 % efficiency at full load. |
Use Scenario: Dual-phase VRM powering discrete or integrated GPU cores in ultrabooks and thin-and-light laptops. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery to minimize dead-time losses. Use Value: 25–50 ns trr and 17–35 nC Qrr reduce cross-conduction energy and improve light-load efficiency. |
| USB-C PD Fast Charging | Industrial DC/DC Module |
|
Use Scenario: Secondary-side synchronous rectifier in 20–100 W USB-C PD adapters with GaN primary-side control. IC Role / Device Role / Timing Role: 30 V-rated output switch handling up to 5 A continuous current at 100 kHz–1 MHz. Use Value: 0.0076 Ω RDS(on) at 4.5 V gate drive enables direct interface with low-voltage PWM controllers without level-shifting. |
Use Scenario: Input-stage switch in isolated 24 V to 5 V industrial DC/DC modules requiring long-term reliability. IC Role / Device Role / Timing Role: Primary-side high-side switch in non-isolated buck pre-regulator stage. Use Value: -55 to 150 °C operating range and 61 mJ avalanche energy rating support operation in harsh ambient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | Higher RDS(on) = 0.0085 Ω @ 10 V; lower ID = 19.5 A; same SO-8 package | Suitable for lower-current (<15 A) VRMs where thermal margin allows higher conduction loss | Prefer SI4168DY-T1-GE3 when peak current exceeds 18 A or efficiency >91 % is required at full load |
| IRF7470PBF | Same VDS (30 V), but higher Qg = 22 nC @ 4.5 V; TO-252 package; no halogen-free marking | Better suited for board-level heatsinking; less optimal for dense SO-8 layouts due to larger footprint | Choose SI4168DY-T1-GE3 for space-constrained notebook designs requiring Pb-free compliance and lower gate charge |
Compared with Si7157DP-T1-GE3 and IRF7470PBF, the SI4168DY-T1-GE3 delivers superior current density (24 A in SO-8), lowest gate charge at 4.5 V (13.8 nC), and guaranteed halogen-free/Pb-free construction-making it the preferred choice for high-efficiency, high-density mobile power stages.
Availability
SI4168DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook DC/DC converters, GPU power delivery systems, and USB-C PD fast charging applications requiring stable component supply, long-lifecycle support, and full RoHS compliance.
Supply support for SI4168DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on efficiency, ruggedness, and reliability.
The SI4168DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, high-frequency DC/DC conversion in portable computing and power adapter applications.
FAQ
What is the maximum continuous drain current for SI4168DY-T1-GE3 at 70 °C case temperature?
The SI4168DY-T1-GE3 supports 19.4 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-temperature operation and must be verified against actual PCB layout and heatsinking in the final design. The SI4168DY-T1-GE3 datasheet confirms this rating applies to steady-state conditions with proper SO-8 pad layout per Application Note 826.
Does SI4168DY-T1-GE3 support logic-level gate drive?
Yes, the SI4168DY-T1-GE3 has a gate threshold voltage (VGS(th)) of 1–3 V and delivers 0.0076 Ω RDS(on) at VGS = 4.5 V, making it fully compatible with 3.3 V and 5 V logic-level PWM controllers. The SI4168DY-T1-GE3 achieves usable on-resistance well below 10 mΩ at standard logic voltages, eliminating need for gate drivers in most notebook VRM implementations.
What is the thermal resistance from junction to ambient for SI4168DY-T1-GE3?
The SI4168DY-T1-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W when mounted on a standard 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes typical SO-8 land pattern and is critical for estimating junction temperature rise under load. The SI4168DY-T1-GE3 also specifies 18–22 °C/W junction-to-foot resistance for direct thermal path analysis.
Is SI4168DY-T1-GE3 suitable for synchronous rectification in flyback converters?
Yes, the SI4168DY-T1-GE3 is suitable for synchronous rectification in secondary-side flyback converters up to 100 W, thanks to its low VSD (0.75–1.2 V), fast trr (25–50 ns), and 30 V VDS rating. Its body diode characteristics and low Qrr (17–35 nC) reduce switching losses compared to Schottky alternatives. The SI4168DY-T1-GE3 datasheet explicitly validates this use case in notebook DC/DC applications.
What does the "-T1-GE3" suffix indicate in SI4168DY-T1-GE3?
The "-T1" denotes tape-and-reel packaging (1,000 units per reel), and "-GE3" indicates Vishay's green, halogen-free, and lead-free construction compliant with RoHS Directive 2011/65/EU. This suffix confirms the SI4168DY-T1-GE3 meets environmental requirements for consumer electronics and is distinct from legacy Pb-containing variants. The SI4168DY-T1-GE3 ordering information explicitly states "Lead (Pb)-free and Halogen-free".
SI4168DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1720 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4168DY-T1-GE3 FAQ
1.How can I place an order for SI4168DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4168DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4168DY-T1-GE3 reliable?
The price and inventory of SI4168DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4168DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4168DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4168DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4168DY-T1-GE3?
SI4168DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4168DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4168DY-T1-GE3?
For technical support, including SI4168DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4168DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4168DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4168DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4168DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4168DY-T1-GE3?
All SI4168DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4168DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4168DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4168DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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