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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4172DY-T1-GE3

Name: SI4172DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4172DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4172DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4172DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 15A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI4172DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET optimized for high-side synchronous rectifier operation in notebook CPU core power stages. It delivers R_DS(on) = 0.012 Ω at V_GS = 10 V, 15 A continuous drain current at T_C = 25 °C, and 6.8 nC total gate charge - enabling high-efficiency, low-loss switching in compact DC-DC converters.

For engineers reviewing the SI4172DY-T1-GE3 datasheet, SI4172DY-T1-GE3 pinout, SI4172DY-T1-GE3 application, or SI4172DY-T1-GE3 equivalent, key selection criteria include its SO-8 package thermal performance (R_thJA = 50 °C/W max), 100 % UIS-tested ruggedness, and verified body diode recovery (t_rr = 15–30 ns) for synchronous buck topologies.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its gate threshold voltage (V_GS(th) = 1.2–2.5 V) and low Q_g/Q_gd ratio (6.8 nC / 2.3 nC) support stable PWM control under light-load conditions while minimizing shoot-through risk in high-frequency synchronous rectification.

The device integrates a robust intrinsic body diode with V_SD = 0.8–1.2 V at I_S = 9 A and Q_rr = 6–12 nC, enabling efficient reverse recovery in discontinuous conduction mode. Thermal design is anchored by R_thJF = 28 °C/W (max) to drain foot, supporting direct PCB copper heatsinking in space-constrained notebook VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 5 V and 12 V input rails in notebook CPU core supplies.
R_DS(on)	0.012 Ω @ V_GS = 10 V - Enables ≤1.3 W conduction loss at 11 A, critical for thermal management in thin-profile laptops.
I_D (continuous)	15 A @ T_C = 25 °C - Supports high-current CPU transient loads without derating when mounted on 1" × 1" FR4 board.
Q_g	6.8 nC @ V_GS = 5 V - Low gate drive energy reduces controller IC loading and enables efficient 300–500 kHz switching.
t_rr	15–30 ns - Fast body diode recovery minimizes dead-time losses and prevents cross-conduction in synchronous buck converters.
R_thJA	50 °C/W (max) - Defines worst-case junction-to-ambient thermal path for layout-dependent thermal design in unheatsinked SO-8 applications.

Pinout & Package

SO-8 (narrow-body, MS-012 compliant) surface-mount package with exposed drain pad for thermal enhancement. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 4.5–10 V logic-level drive; low R_g (0.36–3.6 Ω) ensures fast turn-on/turn-off.
2 (S)	Source	Power return node; tied to ground or low-side switch source; forms common reference for gate drive.
3 (S)	Source	Second source connection; paralleled internally to reduce source inductance and improve current sharing.
4 (S)	Source	Third source connection; enhances thermal and electrical connection to PCB ground plane.
5 (D)	Drain	Main power output node; connected to exposed drain pad (pins 5–8 and underside); primary heat transfer path.
6 (D)	Drain	Second drain connection; electrically and thermally tied to pin 5 and exposed pad.
7 (D)	Drain	Third drain connection; reinforces low-inductance, high-current path to output rail.
8 (D)	Drain	Fourth drain connection; completes quad-drain configuration for minimized R_DS(on) and thermal resistance.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 30 V rating with sub-12 mΩ R_DS(on), delivering higher power density than planar MOSFETs in same footprint.
Optimized for high-side synchronous rectification	Low Q_gd/Q_g ratio (≈34 %) and tight V_GS(th) distribution ensure predictable turn-on timing relative to low-side switch.
100 % UIS tested	Guarantees ruggedness against inductive switching stress up to 22 A avalanche current and 24 mJ energy - essential for VRM reliability.
Halogen-free and Pb-free	Meets IPC-J-STD-609 Class 1 and RoHS Directive 2011/65/EU requirements for green electronics manufacturing.
Exposed drain pad	Provides direct thermal interface to PCB copper; enables R_thJF = 22–28 °C/W for effective junction-to-foot heat extraction.

Applications

Notebook CPU Core VRM	High-Side Synchronous Rectifier
Use Scenario: Regulating 0.8–1.5 V output for Intel/AMD mobile processors under dynamic load transients up to 100 A/µs. IC Role / Device Role / Timing Role: High-side power switch in synchronous buck converter; commutates input voltage to output inductor with precise gate timing. Use Value: 0.012 Ω R_DS(on) limits conduction loss to <1.5 W at 11 A, directly improving VRM efficiency and reducing thermal throttling in ultrabooks.	Use Scenario: Replacing Schottky diode in secondary-side synchronous rectification of isolated DC-DC converters for DDR memory rails. IC Role / Device Role / Timing Role: Active rectifier controlling forward conduction path during positive half-cycle; body diode handles reverse recovery. Use Value: t_rr = 15–30 ns and Q_rr = 6–12 nC minimize reverse recovery loss, increasing conversion efficiency by ≥2 % vs. discrete diodes.
Thin-Profile Laptop Power Stage	Compact Point-of-Load Converter
Use Scenario: Space-constrained 3-phase CPU core supply where height <1.2 mm and thermal resistance must be minimized. IC Role / Device Role / Timing Role: Primary high-side switch operating at 300–500 kHz; leverages SO-8 drain pad for direct PCB heatsinking. Use Value: R_thJF = 22 °C/W (typ.) allows >2.5 W dissipation with 55 °C temperature rise - enabling full 15 A rating without external heatsink.	Use Scenario: Embedded system PoL supplying FPGA I/O banks requiring fast transient response and low quiescent loss. IC Role / Device Role / Timing Role: High-efficiency switching element in monolithic or discrete buck regulator; driven by integrated or external PWM controller. Use Value: V_GS(th) = 1.2–2.5 V ensures clean turn-on with standard 3.3 V or 5 V gate drivers, eliminating need for level shifters.

Notebook CPU Core VRM

High-Side Synchronous Rectifier

Use Scenario: Regulating 0.8–1.5 V output for Intel/AMD mobile processors under dynamic load transients up to 100 A/µs.

IC Role / Device Role / Timing Role: High-side power switch in synchronous buck converter; commutates input voltage to output inductor with precise gate timing.

Use Value: 0.012 Ω R_DS(on) limits conduction loss to <1.5 W at 11 A, directly improving VRM efficiency and reducing thermal throttling in ultrabooks.

Use Scenario: Replacing Schottky diode in secondary-side synchronous rectification of isolated DC-DC converters for DDR memory rails.

IC Role / Device Role / Timing Role: Active rectifier controlling forward conduction path during positive half-cycle; body diode handles reverse recovery.

Use Value: t_rr = 15–30 ns and Q_rr = 6–12 nC minimize reverse recovery loss, increasing conversion efficiency by ≥2 % vs. discrete diodes.

Thin-Profile Laptop Power Stage

Compact Point-of-Load Converter

Use Scenario: Space-constrained 3-phase CPU core supply where height <1.2 mm and thermal resistance must be minimized.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 300–500 kHz; leverages SO-8 drain pad for direct PCB heatsinking.

Use Value: R_thJF = 22 °C/W (typ.) allows >2.5 W dissipation with 55 °C temperature rise - enabling full 15 A rating without external heatsink.

Use Scenario: Embedded system PoL supplying FPGA I/O banks requiring fast transient response and low quiescent loss.

IC Role / Device Role / Timing Role: High-efficiency switching element in monolithic or discrete buck regulator; driven by integrated or external PWM controller.

Use Value: V_GS(th) = 1.2–2.5 V ensures clean turn-on with standard 3.3 V or 5 V gate drivers, eliminating need for level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.0085 Ω @ 10 V, but Q_g = 12.5 nC - higher gate drive demand and slower switching.	Better conduction loss but less suitable for >400 kHz operation due to higher Q_g.	Prefer SI4172DY-T1-GE3 when gate drive capability is limited or switching frequency exceeds 350 kHz.
IRF7470PBF	R_DS(on) = 0.014 Ω @ 10 V, R_thJA = 62 °C/W - higher thermal resistance and on-resistance.	Lower cost but requires larger PCB area or additional thermal vias to match thermal performance.	Choose SI4172DY-T1-GE3 for space-constrained designs needing lower R_thJA and tighter V_GS(th) tolerance.

Compared with Si7157DP-T1-GE3 and IRF7470PBF, the SI4172DY-T1-GE3 offers the optimal balance of low Q_g (6.8 nC), low R_thJA (50 °C/W max), and production-proven UIS ruggedness - making it preferred for high-frequency, thermally constrained notebook VRMs where gate drive efficiency and thermal headroom are critical.

Availability

SI4172DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, high-side synchronous rectifiers, and compact point-of-load converters requiring stable component supply, lead-free compliance, and consistent thermal performance across production volumes.

Supply support for SI4172DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for computing and portable electronics.

The SI4172DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-frequency, high-current synchronous rectification in mobile computing power delivery systems.

FAQ

What is the maximum continuous drain current for SI4172DY-T1-GE3 at 70 °C case temperature?

The SI4172DY-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow. The SI4172DY-T1-GE3 maintains R_DS(on) stability across this range due to its trench-gate structure.

Does SI4172DY-T1-GE3 require a gate resistor for safe operation in synchronous buck converters?

While the SI4172DY-T1-GE3 does not mandate an external gate resistor, a 1–5 Ω resistor is recommended to dampen ringing and control dV/dt during switching transitions. Its low intrinsic gate resistance (0.36–3.6 Ω) makes it sensitive to parasitic inductance; proper gate routing and resistor selection prevent oscillation and ensure reliable timing alignment with the low-side switch in the SI4172DY-T1-GE3-based VRM.

Is SI4172DY-T1-GE3 suitable for use as a low-side switch in a synchronous buck converter?

The SI4172DY-T1-GE3 is optimized for high-side synchronous rectifier operation per Vishay's product summary and characterization data, including body diode metrics and gate charge profile. While functional as a low-side switch, its V_GS(th) range (1.2–2.5 V) and Q_gd/Q_g ratio are tuned for high-side timing control; dedicated low-side MOSFETs like Si7157DP-T1-GE3 offer better gate drive margin and lower Q_g for that role. The SI4172DY-T1-GE3 remains viable but not ideal for low-side use.

What is the body diode forward voltage of SI4172DY-T1-GE3 at 9 A source current?

The SI4172DY-T1-GE3 exhibits a body diode forward voltage (V_SD) of 0.8–1.2 V at I_S = 9 A and T_J = 25 °C, as measured in the Drain-Source Body Diode Characteristics section. This range accounts for process variation and temperature effects; at elevated junction temperatures, V_SD decreases slightly due to negative temperature coefficient. This V_SD directly impacts conduction loss during dead-time intervals in the SI4172DY-T1-GE3-based converter.

How does the thermal performance of SI4172DY-T1-GE3 compare between junction-to-ambient and junction-to-foot measurements?

The SI4172DY-T1-GE3 specifies R_thJA = 50 °C/W (max) for junction-to-ambient and R_thJF = 28 °C/W (max) for junction-to-foot. The 44 % lower R_thJF confirms the effectiveness of the exposed drain pad as a thermal path - meaning PCB copper connected to pins 5–8 and the underside pad dominates heat removal. For thermal design, R_thJF should be used when the drain is soldered to a large copper pour; R_thJA applies only when relying solely on ambient convection. Both values are validated for the SI4172DY-T1-GE3 in its SO-8 package.

SI4172DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 4.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4172DY-T1-GE3 FAQ

1.How can I place an order for SI4172DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4172DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4172DY-T1-GE3 reliable?

The price and inventory of SI4172DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4172DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4172DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4172DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4172DY-T1-GE3?

SI4172DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4172DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4172DY-T1-GE3?

For technical support, including SI4172DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4172DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4172DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4172DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4172DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4172DY-T1-GE3?

All SI4172DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4172DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4172DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4172DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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