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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4176DY-T1-GE3

Name: SI4176DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4176DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4176DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4176DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 12A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI4176DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, with R_DS(on) = 0.020 Ω at V_GS = 10 V, 12 A continuous drain current (T_J = 150 °C), and 4.7 nC total gate charge - optimized for load switching in notebook power rails.

For engineers reviewing the SI4176DY-T1-GE3 datasheet, SI4176DY-T1-GE3 pinout, SI4176DY-T1-GE3 application, or SI4176DY-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, 100 % R_g and UIS tested reliability, and lead-free/halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g (4.7 nC at V_GS = 4.5 V) and low C_iss (490 pF). Its gate threshold voltage (1.2–2.2 V) enables robust turn-on with standard logic-level drivers.

The device integrates a body diode with V_SD = 0.8–1.2 V at 6.7 A and t_rr = 15–30 ns, supporting synchronous rectification and bidirectional current handling in low-current DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24-V input rail switching without avalanche stress
R_DS(on)	0.020 Ω @ V_GS = 10 V - delivers <150 mW conduction loss at 8.3 A
I_D (continuous)	12 A @ T_C = 25 °C - package-limited current suitable for compact PCB layouts
Q_g	4.7 nC @ V_GS = 4.5 V - enables efficient 1-MHz switching with low driver power
t_r/t_f	10–25 ns - supports fast edge rates while limiting EMI in portable systems
R_thJA	42–53 °C/W - requires minimal copper area for thermal management on FR4
V_GS(th)	1.2–2.2 V - ensures reliable enhancement-mode operation across temperature

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for thermal performance; 100 % R_g and UIS tested per production lot.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (pins 1–4, 6–8), Source (pin 5), Gate (pin 2)	Pins 1–4 and 6–8 are internally connected to drain; pin 5 is source; pin 2 is gate - enables high-current drain routing and low-inductance source return

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest R_DS(on) per mm² among Vishay's 30-V SO-8 MOSFETs
100 % R_g and UIS tested	Guarantees gate robustness and avalanche energy handling (E_AS = 5 mJ)
Lead (Pb)-free and halogen-free	Meets IEC 61249-2-21 and RoHS 2002/95/EC without compromising thermal performance
Body diode t_rr = 15–30 ns	Reduces reverse recovery losses in synchronous buck topologies

Applications

Load Switching	Notebook Power Rails
Use Scenario: Hot-swap control of USB-C PD power paths in ultrabooks. IC Role / Device Role / Timing Role: N-channel high-side load switch with logic-level gate drive. Use Value: Low 0.027 Ω R_DS(on) at 4.5 V minimizes voltage drop and heat generation during sustained 8-A loads.	Use Scenario: Core voltage regulation for Intel Core i-series CPU VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier in 500-kHz–1-MHz buck converter output stage. Use Value: Fast 10–25 ns switching transitions and low Q_g reduce driver losses and improve efficiency above 92 %.
Low-Current DC-DC Converters	Peripheral Power Management
Use Scenario: 3.3-V/5-V auxiliary supply in embedded controllers. IC Role / Device Role / Timing Role: Primary switch in non-isolated buck regulator with external PWM controller. Use Value: 1.2–2.2 V V_GS(th) ensures stable turn-on even with aging or temperature drift in feedback loop.	Use Scenario: Independent power gating for PCIe SSD modules and HDMI transceivers. IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ 1 µA) high-side switch enabling deep-sleep mode. Use Value: Sub-µA off-state leakage preserves battery life over multi-week standby periods.

Load Switching

Notebook Power Rails

Use Scenario: Hot-swap control of USB-C PD power paths in ultrabooks.

IC Role / Device Role / Timing Role: N-channel high-side load switch with logic-level gate drive.

Use Value: Low 0.027 Ω R_DS(on) at 4.5 V minimizes voltage drop and heat generation during sustained 8-A loads.

Use Scenario: Core voltage regulation for Intel Core i-series CPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier in 500-kHz–1-MHz buck converter output stage.

Use Value: Fast 10–25 ns switching transitions and low Q_g reduce driver losses and improve efficiency above 92 %.

Low-Current DC-DC Converters

Peripheral Power Management

Use Scenario: 3.3-V/5-V auxiliary supply in embedded controllers.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck regulator with external PWM controller.

Use Value: 1.2–2.2 V V_GS(th) ensures stable turn-on even with aging or temperature drift in feedback loop.

Use Scenario: Independent power gating for PCIe SSD modules and HDMI transceivers.

IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ 1 µA) high-side switch enabling deep-sleep mode.

Use Value: Sub-µA off-state leakage preserves battery life over multi-week standby periods.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si4410DY-T1-GE3	R_DS(on) = 0.015 Ω @ 10 V but higher Q_g (12.5 nC); same SO-8 package	Better conduction loss but higher switching loss above 500 kHz	Select for <500-kHz, high-current applications where thermal margin is constrained
IRF7470PBF	R_DS(on) = 0.022 Ω @ 10 V; TO-252 package; no halogen-free certification	Larger footprint and lower power density; not RoHS-compliant per IEC 61249-2-21	Select only if board space allows DPAK and legacy compliance suffices

Compared with Si4410DY-T1-GE3 and IRF7470PBF, the SI4176DY-T1-GE3 offers optimal balance of low gate charge (4.7 nC), logic-level compatibility, and certified environmental compliance - making it preferred for space-constrained, high-frequency notebook and embedded DC-DC designs.

Availability

SI4176DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook power rails, peripheral power management, and low-current DC-DC converters requiring stable component supply and full halogen-free compliance.

Supply support for SI4176DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI4176DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-efficiency, logic-level-driven load switching and synchronous rectification in portable computing and embedded power systems.

FAQ

What is the maximum continuous drain current rating for SI4176DY-T1-GE3 at 70 °C case temperature?

The SI4176DY-T1-GE3 supports 9.7 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under steady-state conditions and must be validated against actual board layout and airflow.

Does SI4176DY-T1-GE3 support 3.3-V gate drive in practical applications?

Yes, the SI4176DY-T1-GE3 has V_GS(th) = 1.2–2.2 V and R_DS(on) = 0.027 Ω at V_GS = 4.5 V, enabling functional operation with 3.3-V logic drivers. However, full 12-A capability requires ≥4.5 V gate drive to ensure low on-resistance and thermal stability.

Is SI4176DY-T1-GE3 suitable for synchronous rectification in buck converters?

Yes, the SI4176DY-T1-GE3 is qualified for synchronous rectification due to its fast body diode (t_rr = 15–30 ns), low Q_gd (1.75 nC), and tight V_GS(th) distribution - all confirmed in the official Vishay datasheet (Doc #65539).

What is the thermal resistance from junction to ambient for SI4176DY-T1-GE3 on a standard 1" x 1" FR4 board?

The SI4176DY-T1-GE3 exhibits R_thJA = 42–53 °C/W when mounted on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes no additional heatsinking and defines the upper bound for power dissipation in natural-convection environments.

How is the halogen-free status of SI4176DY-T1-GE3 verified and documented?

The SI4176DY-T1-GE3 is certified halogen-free per IEC 61249-2-21, as explicitly stated in the Ordering Information line and Features section of Vishay's official datasheet (S09-2430-Rev. A). Compliance is verified through material declaration and third-party testing, not inferred.

SI4176DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 8.3A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4176DY-T1-GE3 FAQ

1.How can I place an order for SI4176DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4176DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4176DY-T1-GE3 reliable?

The price and inventory of SI4176DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4176DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4176DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4176DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4176DY-T1-GE3?

SI4176DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4176DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4176DY-T1-GE3?

For technical support, including SI4176DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4176DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4176DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4176DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4176DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4176DY-T1-GE3?

All SI4176DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4176DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4176DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4176DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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