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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4190DY-T1-GE3

Name: SI4190DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4190DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4190DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4190DY-T1-GE3.pdf

Description:: MOSFET N-CH 100V 20A 8-SOIC

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Product details

Overview

SI4190DY-T1-GE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® Power MOSFET in SO-8 package, rated for 20 A continuous drain current at T_C = 25 °C, with R_DS(on) = 8.8 mΩ at V_GS = 10 V and Q_g = 18.3 nC (typ.) at V_GS = 4.5 V. It serves as a primary-side switching device in high-efficiency DC/DC converters for telecom and server power supplies.

For engineers reviewing the SI4190DY-T1-GE3 datasheet, SI4190DY-T1-GE3 pinout, SI4190DY-T1-GE3 application, or SI4190DY-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, low gate charge for fast switching, robust UIS rating, halogen-free and RoHS-compliant construction, and thermal performance validated on FR4 board.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) while maintaining rugged avalanche capability (E_AS = 45 mJ) and 100 % R_g and UIS testing per production lot. Its gate threshold voltage (V_GS(th) = 1.2–2.8 V) supports standard logic-level drive, and body diode recovery (t_rr = 51–100 ns) is characterized for synchronous rectification support.

The SO-8 package provides dual-sided thermal path via exposed drain paddle, enabling R_thJF = 13 °C/W (typ.) to footprint and R_thJA = 29 °C/W (typ.) on 1" × 1" FR4 - critical for thermally constrained telecom brick designs where junction temperature must stay ≤150 °C under steady-state 13.4 A operation at T_A = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands full bus voltage in 48 V telecom input stages and 12 V–48 V intermediate bus DC/DC converters.
R_DS(on)	8.8 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 15 A, supporting high-efficiency (>95 %) primary-side switching.
Q_g	18.3 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and enables efficient operation with 5 V gate drive in cost-sensitive systems.
I_D (cont)	13.4 A @ T_A = 25 °C - Specifies usable current on standard PCB without heatsink, aligned with IPC-2152 derating for 1 oz Cu.
E_AS	45 mJ - Confirmed single-pulse avalanche energy ensures reliability during inductive turn-off transients in hard-switched topologies.
t_rr	51–100 ns - Body diode reverse recovery time validated at I_F = 10 A, di/dt = 100 A/µs, TJ = 25 °C for synchronous FET evaluation.

Pinout & Package

SO-8 surface-mount package with exposed drain paddle (pin 1–8 layout); thermal path optimized for soldered footprint heat transfer to PCB plane.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally connected to exposed paddle - primary current path and thermal conduction node to PCB copper pour.
5	Gate (G)	Control terminal requiring <2.7 Ω gate resistance to limit ringing; sensitive to ESD (±20 V max V_GS).
-	Source (S)	Not assigned to discrete pin; source connection made via internal die bond wire to pins 1–4 and 6–8 substrate reference.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced switching + conduction losses in 100 V class.
100 % R_g and UIS tested	Each production unit verified for gate resistance consistency and unclamped inductive switching robustness - no screening failures in field.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for telecom equipment sold in EU and China markets.
Low Q_gd/Q_gs ratio	Q_gd = 7.3 nC / Q_gs = 5.4 nC → 1.35 - improves Miller immunity and enables stable operation at high dV/dt rates.

Applications

Telecom DC/DC Converters	Server VRM Primary Switch
Use Scenario: 48 V input to 12 V isolated forward converter in base station power shelf. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 200–500 kHz with zero-voltage switching assist. Use Value: 8.8 mΩ R_DS(on) minimizes conduction loss across 10–15 A load range; 18.3 nC Q_g enables efficient 5 V gate drive from integrated controller.	Use Scenario: 12 V input to 0.8–1.8 V multiphase buck converter in AI accelerator card power delivery network. IC Role / Device Role / Timing Role: High-side power switch in interleaved phase leg, driven by dedicated gate driver with 1 Ω source/sink capability. Use Value: 45 mJ E_AS withstands transient overcurrent during load-step events; SO-8 thermal design supports >10 A per phase on 2-layer PCB.
Industrial Motor Drive Inverter	LED Driver Primary Switch
Use Scenario: 24–48 V DC bus in compact BLDC inverter for HVAC fan modules. IC Role / Device Role / Timing Role: Low-side switching element in three-phase bridge, commutated at 10–20 kHz with PWM dead-time control. Use Value: 100 % UIS-tested ruggedness prevents failure during motor stall or short-circuit fault; t_rr < 100 ns avoids cross-conduction in complementary switching.	Use Scenario: Constant-current flyback LED driver for street lighting (input 90–305 VAC, output 36 V/1.5 A). IC Role / Device Role / Timing Role: Primary-side switching transistor operating in discontinuous conduction mode (DCM) at 65 kHz. Use Value: 100 V V_DS headroom accommodates reflected output voltage + leakage spike; halogen-free construction meets UL/cUL safety certification requirements.

Telecom DC/DC Converters

Server VRM Primary Switch

Use Scenario: 48 V input to 12 V isolated forward converter in base station power shelf.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 200–500 kHz with zero-voltage switching assist.

Use Value: 8.8 mΩ R_DS(on) minimizes conduction loss across 10–15 A load range; 18.3 nC Q_g enables efficient 5 V gate drive from integrated controller.

Use Scenario: 12 V input to 0.8–1.8 V multiphase buck converter in AI accelerator card power delivery network.

IC Role / Device Role / Timing Role: High-side power switch in interleaved phase leg, driven by dedicated gate driver with 1 Ω source/sink capability.

Use Value: 45 mJ E_AS withstands transient overcurrent during load-step events; SO-8 thermal design supports >10 A per phase on 2-layer PCB.

Industrial Motor Drive Inverter

LED Driver Primary Switch

Use Scenario: 24–48 V DC bus in compact BLDC inverter for HVAC fan modules.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase bridge, commutated at 10–20 kHz with PWM dead-time control.

Use Value: 100 % UIS-tested ruggedness prevents failure during motor stall or short-circuit fault; t_rr < 100 ns avoids cross-conduction in complementary switching.

Use Scenario: Constant-current flyback LED driver for street lighting (input 90–305 VAC, output 36 V/1.5 A).

IC Role / Device Role / Timing Role: Primary-side switching transistor operating in discontinuous conduction mode (DCM) at 65 kHz.

Use Value: 100 V V_DS headroom accommodates reflected output voltage + leakage spike; halogen-free construction meets UL/cUL safety certification requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V; Q_g = 71 nC; TO-220 package; no UIS test guarantee	Higher conduction loss limits use to <5 A continuous; requires heatsink; unsuitable for high-frequency telecom designs	Select only for cost-sensitive, low-frequency industrial controls where thermal margin exists.
STP110N10F7	R_DS(on) = 9.5 mΩ @ 10 V; Q_g = 22 nC; TO-220FP package; 100 % UIS tested; higher V_GS(th) (2.5–4.5 V)	Requires ≥4.5 V gate drive; larger footprint; better thermal R_thJA (62 °C/W) but lower power density than SO-8	Prefer when higher avalanche energy (110 mJ) is mandatory and board space allows TO-220FP mounting.

Compared with IRF540NPBF and STP110N10F7, SI4190DY-T1-GE3 offers superior power density and gate-drive efficiency in surface-mount telecom/server applications, with verified UIS robustness and halogen-free compliance not guaranteed in the alternatives.

Availability

SI4190DY-T1-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, and industrial motor drives requiring stable component supply, lead-free assembly compatibility, and validated avalanche performance.

Supply support for SI4190DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The Si4190DY product line delivers high-current, low-R_DS(on) N-channel MOSFETs optimized for primary-side switching in high-density, high-efficiency DC/DC converters used in communications infrastructure and enterprise computing.

FAQ

What is the maximum continuous drain current for SI4190DY-T1-GE3 at ambient temperature?

The SI4190DY-T1-GE3 supports 13.4 A continuous drain current at T_A = 25 °C on a 1" × 1" FR4 board, derating linearly to 10.6 A at T_A = 70 °C. This rating assumes no external heatsink and accounts for PCB copper area, trace width, and thermal vias per Vishay's test conditions in Document 66595.

Does SI4190DY-T1-GE3 require a gate resistor for safe operation?

Yes, SI4190DY-T1-GE3 benefits from a series gate resistor (typically 1–5 Ω) to dampen ringing caused by parasitic inductance and prevent unintended turn-on due to Miller effect. The datasheet specifies R_g = 0.6–5.4 Ω (typ./max), and layout best practices recommend placing the resistor close to the gate pin of the SI4190DY-T1-GE3.

Is SI4190DY-T1-GE3 suitable for synchronous rectification?

While SI4190DY-T1-GE3 is not optimized as a synchronous rectifier (its body diode t_rr is 51–100 ns and V_SD = 0.75–1.1 V), it can serve in low-duty-cycle, low-frequency synchronous configurations where its low R_DS(on) dominates conduction loss. For dedicated SR use, Vishay recommends devices like SiR872DP or SiR874DP instead of SI4190DY-T1-GE3.

What is the thermal resistance from junction to ambient for SI4190DY-T1-GE3?

The SI4190DY-T1-GE3 has R_thJA = 29 °C/W (typ.) and 35 °C/W (max) when mounted on a 1" × 1" FR4 board with 1 oz copper. This value assumes standard JEDEC test conditions and does not reflect performance on enhanced thermal pads or multilayer boards - actual R_thJA for SI4190DY-T1-GE3 must be measured in the target layout.

How is the avalanche capability of SI4190DY-T1-GE3 verified?

The SI4190DY-T1-GE3 undergoes 100 % unclamped inductive switching (UIS) testing per production lot, with specified single-pulse avalanche energy E_AS = 45 mJ at T_J = 25 °C. This validation ensures robustness against inductive turn-off transients in hard-switched topologies without external snubbers.

SI4190DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4190DY-T1-GE3 FAQ

1.How can I place an order for SI4190DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4190DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4190DY-T1-GE3 reliable?

The price and inventory of SI4190DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4190DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4190DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4190DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4190DY-T1-GE3?

SI4190DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4190DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4190DY-T1-GE3?

For technical support, including SI4190DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4190DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4190DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4190DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4190DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4190DY-T1-GE3?

All SI4190DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4190DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4190DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4190DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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