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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4196DY-T1-E3

Name: SI4196DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4196DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4196DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4196DY-T1-E3.pdf

Description:: MOSFET N-CH 20V 8A 8SO

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Product details

Overview

SI4196DY-T1-E3 from Vishay Siliconix is an N-channel 20 V vertical DMOS power MOSFET SPICE subcircuit model (Level 3), optimized for -55 °C to +125 °C operation under pulsed 0–5 V gate drive, with R_DS(on) = 0.022 Ω at V_GS = 4.5 V/8 A and Q_g = 8.5 nC at 4.5 V, used in simulation of DC-DC converter switching stages.

For engineers reviewing the SI4196DY-T1-E3 datasheet, SI4196DY-T1-E3 pinout, SI4196DY-T1-E3 application, or SI4196DY-T1-E3 equivalent, this model supports accurate transient, gate charge, and body diode reverse recovery simulation across temperature extremes without convergence issues in PSpice and LTspice.

Technical Context

The SI4196DY-T1-E3 SPICE model implements a macro-level subcircuit using Level 3 MOS formalism, with extracted parameters fitted to measured R_DS(on), C_iss (822 pF), C_oss (107 pF), and Q_gd (1.1 nC) data across -55 °C to +125 °C. It models gate-to-drain feedback capacitance explicitly to avoid switched-C_gd convergence failure.

It reproduces nonlinear transconductance (g_fs = 21 S simulated), threshold voltage (V_GS(th) = 0.71 V), and body diode forward voltage (V_SD = 0.79 V at 5.4 A), all validated against pulsed-measurement benchmarks per Vishay Document 66600.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	20 V - defines maximum drain-source blocking voltage in linear and switching operation
R_DS(on) @ 4.5 V	0.022 Ω - determines conduction loss in 3.3 V–5 V logic-driven synchronous buck stages
Q_g @ 4.5 V	8.5 nC - sets gate drive power and switching speed in high-frequency PWM designs
C_iss	822 pF - impacts gate driver loading and EMI filter design in hard-switched converters
V_GS(th)	0.71 V - enables low-voltage turn-on compatibility with 1.8 V and 2.5 V controller outputs
Operating Temp Range	-55 °C to +125 °C - validates thermal robustness for automotive under-hood and industrial motor control simulations

Pinout & Package

The SI4196DY-T1-E3 is a SPICE subcircuit model, not a physical device; it has no package or pinout. The model maps to the three-terminal N-channel MOSFET topology: Gate (G), Drain (D), Source (S), with internal nodes Gx, Gy, DBD, and auxiliary elements (R1, CGS, CGD, ETCV) defined in the schematic on page 2 of Document 66600.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Primary control input; accepts 0–5 V pulsed drive; modeled with nonlinear capacitance network
D	Drain terminal	High-side switch node; connects to input rail in buck topologies or output in load switches
S	Source terminal	Reference node for gate drive; tied to power ground or floating return in half-bridge configurations
DBD	Body diode anode	Internal parasitic diode cathode connected to D; enables freewheeling path modeling

Key Features

Feature	Design Value
Novel C_gd feedback network	Enables stable transient simulation without convergence failure during hard switching transitions
Temperature-optimized extraction	Validated fit to measured R_DS(on), Q_g, and C_iss across -55 °C to +125 °C
Body diode reverse recovery modeling	Accurately replicates V_SD = 0.79 V and diode tail current behavior in synchronous rectification
Level 3 MOS formalism	Supports both linear (LDO pass element) and switching (PWM FET) behavioral accuracy in one model

Applications

DC-DC Synchronous Buck Converter	Load Switch for Portable Systems
Use Scenario: High-efficiency 5 V → 1.2 V conversion in FPGA core power supplies with 500 kHz–2 MHz switching frequency. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET controlled by external PWM generator; modeled for precise conduction and switching loss prediction. Use Value: Enables accurate loss budgeting via simulated R_DS(on) = 0.022 Ω and Q_g = 8.5 nC, reducing prototype iterations.	Use Scenario: Inrush-limited 3.3 V rail enable for USB-C peripheral detection circuitry. IC Role / Device Role / Timing Role: Single N-channel high-side switch with integrated gate driver interface; modeled for turn-on delay and rise time fidelity. Use Value: Predicts V_GS(th) = 0.71 V turn-on margin and body diode conduction during hot-swap events.
Motor Driver Half-Bridge Stage	Hot-Swap Controller Protection Element
Use Scenario: 24 V brushed DC motor drive with PWM-controlled H-bridge using discrete FETs. IC Role / Device Role / Timing Role: Low-side switch in complementary pair; modeled for cross-conduction avoidance and shoot-through risk assessment. Use Value: Simulates C_iss/C_oss ratio impact on dead-time optimization and switching node ringing.	Use Scenario: 12 V backplane protection in telecom line cards with fault current limiting. IC Role / Device Role / Timing Role: Current-sense-enabled load switch; modeled for overcurrent response timing and body diode reverse recovery during short-circuit clearing. Use Value: Validates Q_gd = 1.1 nC and g_fs = 21 S interaction with external current-limit amplifier loop dynamics.

DC-DC Synchronous Buck Converter

Load Switch for Portable Systems

Use Scenario: High-efficiency 5 V → 1.2 V conversion in FPGA core power supplies with 500 kHz–2 MHz switching frequency.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET controlled by external PWM generator; modeled for precise conduction and switching loss prediction.

Use Value: Enables accurate loss budgeting via simulated R_DS(on) = 0.022 Ω and Q_g = 8.5 nC, reducing prototype iterations.

Use Scenario: Inrush-limited 3.3 V rail enable for USB-C peripheral detection circuitry.

IC Role / Device Role / Timing Role: Single N-channel high-side switch with integrated gate driver interface; modeled for turn-on delay and rise time fidelity.

Use Value: Predicts V_GS(th) = 0.71 V turn-on margin and body diode conduction during hot-swap events.

Motor Driver Half-Bridge Stage

Hot-Swap Controller Protection Element

Use Scenario: 24 V brushed DC motor drive with PWM-controlled H-bridge using discrete FETs.

IC Role / Device Role / Timing Role: Low-side switch in complementary pair; modeled for cross-conduction avoidance and shoot-through risk assessment.

Use Value: Simulates C_iss/C_oss ratio impact on dead-time optimization and switching node ringing.

Use Scenario: 12 V backplane protection in telecom line cards with fault current limiting.

IC Role / Device Role / Timing Role: Current-sense-enabled load switch; modeled for overcurrent response timing and body diode reverse recovery during short-circuit clearing.

Use Value: Validates Q_gd = 1.1 nC and g_fs = 21 S interaction with external current-limit amplifier loop dynamics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SPICE MOSFET modeling applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si4410DY-T1-E3 SPICE Model	Higher V_DS rating (30 V), higher R_DS(on) (0.035 Ω @ 4.5 V), larger C_iss (1050 pF)	Better suited for 12 V input systems requiring higher breakdown margin	Select when system V_IN exceeds 20 V or higher avalanche robustness is required
Si7157DP-T1-GE3 SPICE Model	Lower V_DS (12 V), lower Q_g (5.8 nC), smaller die size	Optimized for ultra-low-power 1.8 V–3.3 V portable applications with tight gate drive budgets	Prefer for battery-powered devices where gate drive energy minimization is critical

Compared with Si4410DY-T1-E3 and Si7157DP-T1-GE3, the SI4196DY-T1-E3 provides optimal balance of low R_DS(on), moderate Q_g, and 20 V rating for 5 V–12 V intermediate bus converters-making it the preferred choice for cost-sensitive, thermally constrained 1–2 MHz buck regulators.

Availability

SI4196DY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converter design, motor driver simulation, and hot-swap controller development requiring stable component supply and verified SPICE behavioral fidelity.

Supply support for SI4196DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency performance.

The SI4196DY-T1-E3 belongs to Vishay's SPICE Modeling Library for Power MOSFETs, designed to accelerate accurate power stage simulation for DC-DC, motor control, and load switch applications without physical prototyping delays.

FAQ

What is the SI4196DY-T1-E3 and how is it used?

The SI4196DY-T1-E3 is a SPICE subcircuit model-not a physical component-for the Vishay Siliconix N-channel 20 V vertical DMOS MOSFET. It is used in circuit simulators (e.g., PSpice, LTspice) to predict switching behavior, gate drive requirements, and losses. The SI4196DY-T1-E3 model includes temperature-dependent R_DS(on), Q_g, and body diode characteristics validated from -55 °C to +125 °C.

Does the SI4196DY-T1-E3 have a physical package or pinout?

No-the SI4196DY-T1-E3 is a behavioral SPICE model only, with no physical form factor or solderable package. Its terminals (G, D, S, DBD) map to standard MOSFET connections in simulation schematics. Physical implementation requires selecting the actual discrete MOSFET (e.g., Si4196DY package SO-8) and referencing its datasheet for layout and thermal design. The SI4196DY-T1-E3 model itself contains no footprint or mechanical data.

What temperature range does the SI4196DY-T1-E3 model cover?

The SI4196DY-T1-E3 SPICE model is extracted and optimized for operation from -55 °C to +125 °C, matching the rated junction temperature range of the underlying Si4196DY device. Simulated parameters-including R_DS(on), g_fs, C_iss, and V_GS(th)-are temperature-scaled per documented fitting curves in Vishay Document 66600. This ensures fidelity in automotive and industrial thermal stress analysis.

How does the SI4196DY-T1-E3 model handle gate charge and switching transients?

The SI4196DY-T1-E3 uses a novel gate-to-drain feedback capacitance network instead of a switched C_gd model, eliminating convergence failures during fast dV/dt transitions. It accurately reproduces total gate charge Q_g = 8.5 nC (at 4.5 V), Q_gs = 1.1 nC, and Q_gd = 1.1 nC, enabling realistic prediction of turn-on delay, rise time, and Miller plateau duration in hard-switched topologies.

Is the SI4196DY-T1-E3 compatible with LTspice and PSpice?

Yes-the SI4196DY-T1-E3 SPICE model is implemented as a Level 3 MOS subcircuit and is fully compatible with industry-standard simulators including LTspice, PSpice, and Spectre. It requires no proprietary extensions and integrates directly into existing schematics via .lib or .inc inclusion. Verified simulation results for R_DS(on), C_iss, and Q_g match measured data within ±5 %, confirming interoperability across toolchains. The SI4196DY-T1-E3 model file is distributed as ASCII text with clear node definitions.

SI4196DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 4.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4196DY-T1-E3 FAQ

1.How can I place an order for SI4196DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4196DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4196DY-T1-E3 reliable?

The price and inventory of SI4196DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4196DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4196DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4196DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4196DY-T1-E3?

SI4196DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4196DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4196DY-T1-E3?

For technical support, including SI4196DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4196DY-T1-E3 requirements.

6.How does Aetrix verify that SI4196DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4196DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4196DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4196DY-T1-E3?

All SI4196DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4196DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4196DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4196DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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