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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4196DY-T1-GE3

Name: SI4196DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4196DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4196DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4196DY-T1-GE3.pdf

Description:: MOSFET N-CH 20V 8A 8SO

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Product details

Overview

SI4196DY-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) vertical DMOS MOSFET SPICE subcircuit model optimized for simulation across –55 °C to +125 °C, with R_DS(on) = 0.022 Ω at V_GS = 4.5 V / I_D = 8 A, Q_g = 14.5 nC at V_GS = 8 V, and C_iss = 822 pF - used in power stage behavioral modeling for DC-DC converters and motor drive gate driver validation.

For engineers reviewing the SI4196DY-T1-GE3 datasheet, SI4196DY-T1-GE3 pinout, SI4196DY-T1-GE3 application, or SI4196DY-T1-GE3 equivalent, this page delivers verified SPICE model parameters, thermal operating range fidelity, gate charge behavior, body diode recovery modeling, and direct comparison to measured device data - all critical for accurate transient and switching loss simulation.

Technical Context

This Level 3 MOS macro model implements a novel gate-to-drain feedback capacitance network to accurately represent Q_gd and Q_gs without convergence issues typical of switched C_gd models. It captures saturated output impedance near V_GS(th) (0.71 V) and models diode reverse recovery characteristics using calibrated body diode voltage (V_SD = 0.79 V at I_S = 5.4 A).

The model is extracted and optimized under pulsed 0 V–5 V gate drive conditions and validated against measured data for R_DS(on), C_iss/C_oss/Cr_ss, g_fs, and total gate charge across temperature - supporting both linear bias analysis and hard-switching transient simulation in industrial and automotive power electronics design flows.

Key Specifications

Parameter	Value and Actual Design Meaning
V_GS(th)	0.71 V - defines minimum gate drive needed to initiate conduction; critical for low-voltage logic-level gate control compatibility.
R_DS(on) @ 4.5 V	0.022 Ω - enables <170 mW conduction loss at 8 A; suitable for high-efficiency 3.3 V/5 V gate-driven synchronous rectifiers.
Q_g @ 8 V	14.5 nC - determines gate driver current demand and switching speed; directly impacts turn-on/turn-off energy in hard-switched topologies.
C_iss	822 pF - sets input impedance seen by gate driver; influences Miller plateau duration and EMI filter design in high-frequency converters.
V_SD	0.79 V - models forward voltage drop of integrated body diode during freewheeling; essential for accurate dead-time and shoot-through risk assessment.
Operating Temp Range	–55 °C to +125 °C - ensures behavioral fidelity across full industrial ambient and junction temperature envelope without model extrapolation.

Pinout & Package

SI4196DY-T1-GE3 is implemented as a SPICE subcircuit model, not a physical packaged device. The model maps to the underlying Si4196DY silicon die, which is housed in a SO-8 package per Vishay's product family documentation. No physical pinout applies - terminals are defined symbolically in the netlist: G (gate), D (drain), S (source), and DBD (body diode node).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Input controlling channel conduction; referenced to source; drives internal capacitances (C_gs, C_gd) per model topology.
D	Drain terminal	Main current output node; connects to high-side or low-side switch node; voltage swing defines avalanche and safe operating area limits.
S	Source terminal	Reference node for gate drive and current return path; tied to ground or floating node depending on topology (e.g., high-side vs. low-side).
DBD	Body diode anode	Explicit node modeling intrinsic parasitic diode; enables accurate reverse recovery waveform capture during commutation events.

Key Features

Feature	Design Value
Level 3 MOS model architecture	Enables stable convergence in large-signal transient simulations while preserving physical parameter relationships (e.g., V_th, β, λ).
Temperature-dependent parameter extraction	Validated across –55 °C to +125 °C - eliminates need for manual thermal derating in thermal-aware system-level simulation.
Gate charge modeling via feedback capacitance network	Avoids numerical instability of switched C_gd while reproducing Q_gd = 1.1 nC and Q_gs = 1.1 nC with <2% error vs. measurement.
Body diode reverse recovery characterization	Includes V_SD = 0.79 V and dynamic recovery timing - critical for predicting cross-conduction losses in synchronous buck or half-bridge configurations.

Applications

DC-DC Converter Power Stage Simulation	Motor Drive Gate Driver Validation
Use Scenario: Behavioral simulation of synchronous buck converter efficiency, switching loss, and thermal stress under varying load and input voltage. IC Role / Device Role / Timing Role: SPICE model representing the low-side MOSFET in a dual-phase controller IC reference design. Use Value: Enables cycle-accurate prediction of Q_g-driven gate driver power consumption and R_DS(on)-dependent conduction loss before PCB spin.	Use Scenario: Transient analysis of gate drive timing margins and shoot-through risk in 3-phase BLDC inverter half-bridge legs. IC Role / Device Role / Timing Role: Subcircuit model of the N-channel switch used with complementary P-channel or bootstrap-gated high-side devices. Use Value: Captures body diode reverse recovery (V_SD, t_rr) to validate dead-time settings and prevent destructive cross-conduction.
Automotive Body Control Module (BCM) Load Switch Modeling	Industrial PLC Output Stage Verification
Use Scenario: Simulating inrush current limiting, overcurrent protection response, and thermal runaway behavior in 12 V load switch applications. IC Role / Device Role / Timing Role: Behavioral representation of the power FET in a discrete high-side load switch circuit with external current sense and thermal foldback. Use Value: Models R_DS(on) drift with junction temperature and V_GS(th) shift to verify trip point stability across –40 °C to +105 °C ambient.	Use Scenario: Validating short-circuit withstand time and safe operating area (SOA) compliance for 24 V digital output modules driving solenoids and relays. IC Role / Device Role / Timing Role: SPICE subcircuit used in fault injection testing to assess current-limiting loop interaction and thermal shutdown coordination. Use Value: Provides accurate C_oss and output capacitance nonlinearities to predict voltage overshoot during inductive load turn-off.

DC-DC Converter Power Stage Simulation

Motor Drive Gate Driver Validation

Use Scenario: Behavioral simulation of synchronous buck converter efficiency, switching loss, and thermal stress under varying load and input voltage.

IC Role / Device Role / Timing Role: SPICE model representing the low-side MOSFET in a dual-phase controller IC reference design.

Use Value: Enables cycle-accurate prediction of Q_g-driven gate driver power consumption and R_DS(on)-dependent conduction loss before PCB spin.

Use Scenario: Transient analysis of gate drive timing margins and shoot-through risk in 3-phase BLDC inverter half-bridge legs.

IC Role / Device Role / Timing Role: Subcircuit model of the N-channel switch used with complementary P-channel or bootstrap-gated high-side devices.

Use Value: Captures body diode reverse recovery (V_SD, t_rr) to validate dead-time settings and prevent destructive cross-conduction.

Automotive Body Control Module (BCM) Load Switch Modeling

Industrial PLC Output Stage Verification

Use Scenario: Simulating inrush current limiting, overcurrent protection response, and thermal runaway behavior in 12 V load switch applications.

IC Role / Device Role / Timing Role: Behavioral representation of the power FET in a discrete high-side load switch circuit with external current sense and thermal foldback.

Use Value: Models R_DS(on) drift with junction temperature and V_GS(th) shift to verify trip point stability across –40 °C to +105 °C ambient.

Use Scenario: Validating short-circuit withstand time and safe operating area (SOA) compliance for 24 V digital output modules driving solenoids and relays.

IC Role / Device Role / Timing Role: SPICE subcircuit used in fault injection testing to assess current-limiting loop interaction and thermal shutdown coordination.

Use Value: Provides accurate C_oss and output capacitance nonlinearities to predict voltage overshoot during inductive load turn-off.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SPICE MOSFET modeling applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si4410DY-T1-GE3 SPICE Model	Higher R_DS(on) (0.035 Ω @ 4.5 V), lower Q_g (9.5 nC), same SO-8 footprint and temperature range.	Better suited for lower-current, higher-speed switching where gate drive strength is constrained.	Select when prioritizing faster switching over conduction loss in <5 A applications.
Si7157DP-T1-GE3 SPICE Model	20 V rating, trench MOSFET architecture, R_DS(on) = 0.018 Ω @ 4.5 V, but C_iss = 1150 pF - higher input capacitance.	Offers lower on-resistance but demands stronger gate driver due to increased C_iss; less stable at high dV/dt.	Prefer when minimizing conduction loss dominates design, and gate driver can supply >2 A peak current.

Compared with Si4410DY-T1-GE3 and Si7157DP-T1-GE3, the SI4196DY-T1-GE3 strikes a balanced trade-off between R_DS(on), Q_g, and C_iss - making it optimal for mid-power 3.3 V/5 V gate-driven converters where both efficiency and gate driver loading must be simultaneously managed.

Availability

SI4196DY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converter development, motor drive validation, and industrial PLC output stage verification requiring stable component supply and traceable SPICE model versioning.

Supply support for SI4196DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability power and signal integrity performance.

The SI4196DY-T1-GE3 SPICE model belongs to Vishay's certified simulation model library for SO-8 packaged N-channel MOSFETs, designed specifically to accelerate power electronics design verification and reduce prototype iterations in automotive and industrial applications.

FAQ

What is the SI4196DY-T1-GE3 and how does it differ from a physical MOSFET?

The SI4196DY-T1-GE3 is a SPICE subcircuit model - not a physical component - representing the electrical behavior of the Vishay Si4196DY silicon die. Unlike a packaged MOSFET, it contains no pins or solder joints; instead, it provides behavioral equations for R_DS(on), C_iss, Q_g, and V_SD in simulation tools. The SI4196DY-T1-GE3 model is extracted from measured data and validated across –55 °C to +125 °C.

Does the SI4196DY-T1-GE3 model include thermal effects and temperature dependency?

Yes, the SI4196DY-T1-GE3 SPICE model is explicitly extracted and optimized across –55 °C to +125 °C, including temperature-dependent variations in threshold voltage, on-resistance, transconductance, and capacitances. It reproduces measured R_DS(on) drift and V_GS(th) shift without requiring user-defined thermal networks or manual parameter scaling.

Can the SI4196DY-T1-GE3 model be used for both linear and switching simulations?

Yes, the SI4196DY-T1-GE3 model is qualified for both linear (small-signal AC, DC transfer curves) and switching (large-signal transient, PWM, hard-switching) analyses. Its Level 3 MOS architecture and novel gate-to-drain feedback network ensure convergence stability while preserving accuracy in gate charge, diode recovery, and saturation region behavior - all confirmed against measured waveforms.

What gate drive voltage range is supported by the SI4196DY-T1-GE3 model?

The SI4196DY-T1-GE3 model is extracted and validated under pulsed 0 V to 5 V gate drive conditions, matching standard logic-level and microcontroller-compatible drive requirements. It accurately represents conduction onset at V_GS(th) = 0.71 V and maintains fidelity up to V_GS = 8 V for total gate charge evaluation - covering common 3.3 V, 5 V, and 8 V gate driver implementations.

How does the SI4196DY-T1-GE3 model handle the body diode and reverse recovery?

The SI4196DY-T1-GE3 model includes an explicit DBD terminal and calibrated body diode parameters: V_SD = 0.79 V at I_S = 5.4 A and modeled reverse recovery dynamics. This enables accurate simulation of freewheeling paths, shoot-through risk, and commutation losses - critical for synchronous rectifier and half-bridge designs where diode behavior directly impacts efficiency and reliability.

SI4196DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 4.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4196DY-T1-GE3 FAQ

1.How can I place an order for SI4196DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4196DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4196DY-T1-GE3 reliable?

The price and inventory of SI4196DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4196DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4196DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4196DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4196DY-T1-GE3?

SI4196DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4196DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4196DY-T1-GE3?

For technical support, including SI4196DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4196DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4196DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4196DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4196DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4196DY-T1-GE3?

All SI4196DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4196DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4196DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4196DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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