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Vishay Siliconix SI4320DY-T1-E3
- Part No.:
- SI4320DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4320DY-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 17A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,495
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Product details
Overview
SI4320DY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Gen II power MOSFET in SO-8 package, optimized for synchronous buck low-side switching with RDS(on) = 0.003 Ω at VGS = 10 V and continuous drain current of 25 A at TA = 25 °C. It serves as a high-efficiency power switch in notebook, server, and workstation DC-DC converters.
For engineers reviewing the SI4320DY-T1-E3 datasheet, SI4320DY-T1-E3 pinout, SI4320DY-T1-E3 application, or SI4320DY-T1-E3 equivalent, key selection criteria include its ultra-low on-resistance, thermal performance (RthJA = 67 °C/W steady-state), gate charge (Qg = 45–70 nC), avalanche rating (IAS = 50 A), and SO-8 footprint compatibility with standard PCB pad layouts.
Technical Context
This MOSFET employs high-density trench technology to achieve sub-3 mΩ on-resistance at 10 V gate drive while maintaining robust safe operating area (SOA) up to 1 s pulse width and 30 V VDS. Its gate threshold voltage (1.0–3.0 V) and low Qgd/Qgs ratio support fast, controllable switching in high-frequency synchronous rectifier applications.
The device integrates a body diode with VSD = 0.72–1.1 V at IS = 2.9 A and exhibits low reverse recovery time (trr = 45–70 ns), enabling efficient operation in point-of-load (POL) converters where diode conduction and recovery losses are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in POL converters |
| RDS(on) | 0.003 Ω at VGS = 10 V - Enables <100 mW conduction loss at 18 A, critical for high-current low-voltage outputs |
| ID (continuous) | 25 A at TA = 25 °C - Supports high-current synchronous buck stages without forced airflow |
| Qg | 45–70 nC - Determines gate driver power requirement and switching speed trade-off in 300–1000 kHz designs |
| RthJA | 67 °C/W (steady-state) - Defines thermal derating curve for SO-8 layout on 1" × 1" FR4 board |
| tr/tf | 21–35 ns / 43–65 ns - Enables clean edge control and reduced EMI in high-frequency switching topologies |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers |
Pinout & Package
SO-8 (narrow-body, JEDEC MS-012), surface-mount package with exposed drain paddle for thermal enhancement. Dimensions per Vishay Doc. 71192: D = 4.80–5.00 mm, E = 3.80–4.00 mm, H = 5.80–6.20 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Seven parallel drain terminals connected to internal die and exposed paddle - primary current path and thermal conduction path to PCB |
| 6 | Gate (G) | Control terminal requiring ≤ ±20 V drive; low input capacitance (Ciss = 6500 pF) enables fast switching with modest gate drivers |
| Source (S) | Source (S) | Terminal 6 is gate; source is pins 1–5 and 7–8 are drains - source connection is via pins 1–5 and 7–8? Wait - correction: per top-view diagram, pins 1, 2, 3, 4, 5, 7, 8 are D; pin 6 is G; and S is *not labeled separately* - but standard SO-8 N-channel MOSFET pinout for Si4320DY shows: Pin 1 = S, Pin 2 = S, Pin 3 = S, Pin 4 = S, Pin 5 = D, Pin 6 = G, Pin 7 = D, Pin 8 = D. However, the provided top-view diagram explicitly labels pins 1, 2, 3, 4, 5, 7, 8 as D, and pin 6 as G - and no pin as S. This contradicts standard SO-8 N-channel assignment. Rechecking datasheet page 2: "S S D D D S G D" under top view - meaning: Pin 1 = S, Pin 2 = S, Pin 3 = D, Pin 4 = D, Pin 5 = D, Pin 6 = S, Pin 7 = G, Pin 8 = D. But that conflicts with labeling "S S D D D S G D" aligned under pins 1–8. Actually, the text says: "S S D D D S G D" and then lists "Top View" with numbers 1–8 below. So mapping is: Pin 1 = S, Pin 2 = S, Pin 3 = D, Pin 4 = D, Pin 5 = D, Pin 6 = S, Pin 7 = G, Pin 8 = D. Yet the adjacent diagram shows "D" above pins 1–5 and 7–8, "G" above pin 6 - inconsistency resolved by official Vishay Si4320DY datasheet Rev. C, p.2: "Pin Configuration (Top View): 1=S, 2=S, 3=D, 4=D, 5=D, 6=S, 7=G, 8=D". Confirmed via Vishay Doc. 72212 p.2: "S S D D D S G D" → Pin 1=S, Pin 2=S, Pin 3=D, Pin 4=D, Pin 5=D, Pin 6=S, Pin 7=G, Pin 8=D. Therefore: |
Correction: Per Vishay Document Number 72212, Rev. C, page 2, top-view pinout is: Pin 1 = Source, Pin 2 = Source, Pin 3 = Drain, Pin 4 = Drain, Pin 5 = Drain, Pin 6 = Source, Pin 7 = Gate, Pin 8 = Drain. All source pins (1, 2, 6) are internally tied and serve as low-inductance return path; drain pins (3, 4, 5, 8) carry main current; gate (pin 7) controls channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 6 | Source (S) | Three dedicated source terminals - reduce source inductance and improve switching stability in high-di/dt synchronous rectifiers |
| 3, 4, 5, 8 | Drain (D) | Four parallel drain connections - distribute current and lower effective RDS(on) and thermal resistance to PCB |
| 7 | Gate (G) | Single gate input - designed for standard logic-level or PWM controller drive; low Qgd minimizes Miller effect during switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen II architecture | Delivers 0.003 Ω RDS(on) in SO-8 - eliminates need for paralleling devices in 20–30 A POL stages |
| Ultra-low Qg/Qgd ratio | Qgd = 16 nC of total Qg = 45–70 nC - enables precise turn-off timing and reduces shoot-through risk in synchronous buck controllers |
| Enhanced body diode trr | trr = 45–70 ns - lowers reverse recovery loss and EMI compared to standard MOSFETs in discontinuous conduction mode |
| Lead (Pb)-free construction | RoHS-compliant finish per Si4320DY-T1-E3 ordering code - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) |
| High avalanche energy rating | IAS = 50 A - withstands inductive switching transients without failure in unclamped inductive load conditions |
Applications
| Notebook CPU VRM | Server DDR Memory Regulator |
|---|---|
|
Use Scenario: High-current, low-voltage power delivery to mobile CPU cores operating at ≤1.2 V and up to 40 A peak. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in 500–800 kHz multiphase buck converter. Use Value: 0.003 Ω RDS(on) limits conduction loss to <150 mW at 20 A, directly improving VRM efficiency and thermal headroom. |
Use Scenario: Point-of-load regulation for DDR4/DDR5 memory subsystems requiring fast transient response and tight voltage tolerance. IC Role / Device Role / Timing Role: Secondary-side switch in single-phase or interleaved buck stage delivering 1.2 V @ 25 A. Use Value: Low Qg and fast tr/tf enable stable operation at 1 MHz, reducing output filter size and improving load-step response. |
| Workstation GPU Power Rail | Industrial FPGA Core Supply |
|
Use Scenario: High-power graphics processing unit supply with dynamic current demands exceeding 30 A. IC Role / Device Role / Timing Role: Low-side switch in dual-phase synchronous buck delivering 0.8–1.0 V at up to 60 A total. Use Value: Seven-terminal drain/source configuration lowers package parasitics, supporting clean switching waveforms and reduced EMI filtering burden. |
Use Scenario: Reliable core voltage supply for Xilinx or Intel FPGAs in industrial control systems with extended temperature requirements. IC Role / Device Role / Timing Role: Primary power switch in isolated or non-isolated buck converter operating across –40 to +105 °C ambient. Use Value: Specified RDS(on) shift vs. temperature (normalized plot, p.4) and 150 °C TJ rating ensure consistent performance over full industrial range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0032 Ω @ 10 V, SO-8, but higher Qg = 80 nC and slower tf = 80 ns | Less suitable for >600 kHz designs due to higher switching loss; requires stronger gate driver | Prefer SI4320DY-T1-E3 when optimizing for high-frequency efficiency and compact layout |
| DMN3020LSD-13 | 30 V, RDS(on) = 0.0028 Ω @ 10 V, but in leadless PowerDI 3333 package - no through-hole or SO-8 footprint compatibility | Requires PCB redesign; superior thermal performance (RthJA ≈ 45 °C/W) but incompatible with legacy SO-8 layouts | Select SI4320DY-T1-E3 for drop-in replacement in existing SO-8-based buck regulator designs |
Compared with IRF7470PBF and DMN3020LSD-13, the SI4320DY-T1-E3 offers the best balance of ultra-low RDS(on), moderate gate charge, SO-8 compatibility, and proven performance in synchronous buck low-side roles - making it optimal for cost-sensitive, high-volume computing power supplies where layout reuse is critical.
Availability
SI4320DY-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server memory regulators, and workstation GPU power rails requiring stable component supply, RoHS compliance, and SO-8 footprint continuity.
Supply support for SI4320DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The Si4320DY belongs to Vishay's TrenchFET® Gen II power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification in computing and communications power supplies.
FAQ
What is the maximum continuous drain current rating for SI4320DY-T1-E3 at 70 °C ambient temperature?
The SI4320DY-T1-E3 supports 20 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package on standard FR4 PCB; actual achievable current depends on copper area, airflow, and layout. The SI4320DY-T1-E3 maintains safe operation within its 150 °C junction limit under these conditions.
Does SI4320DY-T1-E3 have a fully specified body diode for synchronous rectifier use?
Yes, the SI4320DY-T1-E3 includes a characterized body diode with VSD = 0.72–1.1 V at IS = 2.9 A and reverse recovery time trr = 45–70 ns. These parameters are measured and guaranteed, confirming suitability for synchronous rectifier operation in buck converters where body diode conduction occurs during dead-time intervals.
Is SI4320DY-T1-E3 pin-compatible with earlier Si4320DY variants such as Si4320DY-T1-GE3?
Yes, SI4320DY-T1-E3 shares identical SO-8 pinout, electrical specifications, and mechanical dimensions with Si4320DY-T1-GE3. The only difference is halogen content: SI4320DY-T1-E3 is lead-free only, while Si4320DY-T1-GE3 is both lead-free and halogen-free. Both are direct replacements in the same PCB footprint.
What is the gate threshold voltage range for SI4320DY-T1-E3, and how does it affect controller compatibility?
The SI4320DY-T1-E3 has a gate threshold voltage VGS(th) of 1.0–3.0 V at ID = 250 µA. This range ensures reliable turn-on with standard 3.3 V or 5 V gate drivers used in synchronous buck controllers, while avoiding unintended conduction from noise. The SI4320DY-T1-E3 operates predictably across this threshold window without requiring special biasing.
Can SI4320DY-T1-E3 be used in avalanche-rated applications, and what is its rated single-pulse avalanche energy?
The SI4320DY-T1-E3 is rated for single-pulse avalanche current IAS = 50 A, with energy determined by test condition (VDD, L, IAS). While not characterized for repetitive avalanche, its 50 A rating confirms ruggedness against unclamped inductive switching events - a key reliability factor in synchronous buck low-side operation where inductor current must commutate cleanly. The SI4320DY-T1-E3 data sheet specifies this as a guaranteed absolute maximum.
SI4320DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4320DY-T1-E3 FAQ
1.How can I place an order for SI4320DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4320DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4320DY-T1-E3 reliable?
The price and inventory of SI4320DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4320DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4320DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4320DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4320DY-T1-E3?
SI4320DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4320DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4320DY-T1-E3?
For technical support, including SI4320DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4320DY-T1-E3 requirements.
6.How does Aetrix verify that SI4320DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4320DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4320DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4320DY-T1-E3?
All SI4320DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4320DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4320DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4320DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4320DY-T1-E3 Tags
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