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Vishay Siliconix SI4320DY-T1-GE3
- Part No.:
- SI4320DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4320DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 17A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,928
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Product details
Overview
SI4320DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V (D-S) TrenchFET® Gen II power MOSFET in SO-8 package, with RDS(on) = 0.003 Ω at VGS = 10 V and 25 A continuous drain current at TJ = 150 °C. It serves as a low-side synchronous rectifier in high-efficiency DC-DC converters for notebooks and servers.
For engineers reviewing the SI4320DY-T1-GE3 datasheet, SI4320DY-T1-GE3 pinout, SI4320DY-T1-GE3 application, or SI4320DY-T1-GE3 equivalent, key selection criteria include its ultra-low on-resistance, 4.5 V gate drive compatibility, SO-8 thermal performance (RthJA = 67 °C/W), and halogen-free/lead-free compliance per IEC 61249-2-21.
Technical Context
This MOSFET uses high-density TrenchFET® Gen II technology to achieve sub-3 mΩ on-resistance at 10 V gate drive while maintaining robust safe operating area (SOA) up to 70 A pulsed drain current. Its gate threshold voltage (1.0–3.0 V) and low gate charge (Qg = 45–70 nC) support fast switching in high-frequency synchronous buck topologies.
The device integrates a body diode with VSD = 0.72–1.1 V at IS = 2.9 A and exhibits low output capacitance (Coss = 930 pF) and reverse transfer capacitance (Crss = 610 pF) at VDS = 15 V - enabling reduced switching losses and improved efficiency in POL converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for low-voltage DC-DC stages |
| RDS(on) | 0.003 Ω @ VGS = 10 V, ID = 25 A - Enables <1 W conduction loss at 25 A in low-side switch position |
| ID (continuous) | 25 A @ TJ = 150 °C - Supports high-current POL rails without forced airflow |
| Qg | 45–70 nC - Low total gate charge reduces driver power and enables >1 MHz operation |
| Ciss | 6500 pF @ VDS = 15 V - Predictable input capacitance for gate drive loop stability analysis |
| RthJA | 67 °C/W (steady state) - Thermal resistance enables ~2.2 W dissipation on standard FR4 PCB |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
SO-8 (narrow-body, JEDEC MS-012), surface-mount package with exposed drain pad for enhanced thermal conduction. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally paralleled drain terminals - connected to exposed pad for low-inductance, high-current path and thermal sinking |
| 6 | Gate (G) | Control terminal - accepts 0–20 V gate-source voltage; low input capacitance supports fast edge rates |
| Source (S) | Source (S) | Terminal 1–5 and 7–8 are drain; source is pin 6 only - requires careful PCB layout to avoid source inductance in high-di/dt paths |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen II architecture | Delivers 30% lower RDS(on) vs. prior generation at same die size - improves power density in space-constrained server VRMs |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS - eliminates hazardous substances without compromising thermal or electrical performance |
| Low Qgd/Qg ratio | Qgd = 16 nC of total Qg = 45–70 nC - minimizes Miller plateau time and improves hard-switching robustness |
| Body diode trr | 45–70 ns - Fast reverse recovery reduces shoot-through risk and commutation loss in synchronous rectification |
Applications
| Notebook Power Delivery | Server Voltage Regulator Module (VRM) |
|---|---|
Use Scenario: High-efficiency 12 V → 1.2 V conversion in ultrabook CPU core rails. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase interleaved buck converter. Use Value: 0.003 Ω RDS(on) cuts conduction loss by >40% vs. legacy 5 mΩ MOSFETs, extending battery runtime. | Use Scenario: 48 V → 12 V intermediate bus conversion feeding downstream point-of-load regulators. IC Role / Device Role / Timing Role: Primary low-side switch in high-current (≥100 A) multiphase buck stage. Use Value: SO-8 thermal design (RthJF = 13–16 °C/W) enables direct mounting to heatsink via drain pad - sustains 25 A continuous without derating. |
| Workstation GPU Power Rail | Industrial POL Converter |
Use Scenario: Dynamic load transient response for discrete GPU memory and core supplies. IC Role / Device Role / Timing Role: Low-side switch in 500 kHz–1 MHz buck regulator with COT control. Use Value: 45–70 nC Qg allows clean 10 V gate drive with minimal overshoot - critical for stable regulation under 100 A/µs load steps. | Use Scenario: Isolated 24 V input to 3.3 V/5 V output for programmable logic controllers. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward or LLC resonant converter. Use Value: Body diode VSD = 0.72–1.1 V and trr = 45–70 ns reduce reverse recovery loss - improves full-load efficiency by 1.2% over Schottky solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0032 Ω @ 10 V, higher Qg = 82 nC, TO-252 package | Larger footprint and higher thermal resistance (RthJA = 80 °C/W) - less suitable for dense multi-phase layouts | Prefer SI4320DY-T1-GE3 where board space and thermal performance are constrained |
| DMN3025LSD-13 | RDS(on) = 0.0025 Ω @ 10 V but rated only to 20 A continuous; SO-8 with different pinout (dual-N) | Not a drop-in replacement - gate/source/drain assignments differ; requires PCB redesign | Select SI4320DY-T1-GE3 when single-N channel, 25 A rating, and verified SO-8 pinout are required |
Compared with IRF7470PBF and DMN3025LSD-13, the SI4320DY-T1-GE3 offers optimal balance of ultra-low RDS(on), SO-8 thermal efficiency, and gate drive compatibility - making it preferred for high-density, high-current synchronous buck designs where layout reuse and thermal headroom are critical.
Availability
SI4320DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook power delivery, server VRMs, and industrial POL converters requiring stable component supply and long-term manufacturing continuity.
Supply support for SI4320DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si4320DY product line delivers high-current, low-RDS(on) N-channel MOSFETs optimized for synchronous rectification in high-frequency DC-DC converters used in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for SI4320DY-T1-GE3 at 70 °C ambient temperature?
The SI4320DY-T1-GE3 supports 20 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1" × 1" FR4) and accounts for thermal derating from the 25 A limit at 25 °C ambient. The SI4320DY-T1-GE3 achieves this using its low RDS(on) and SO-8 package thermal design.
Does SI4320DY-T1-GE3 support 4.5 V gate drive for logic-level operation?
Yes, the SI4320DY-T1-GE3 is fully characterized at VGS = 4.5 V, delivering RDS(on) = 0.004 Ω at ID = 22 A. Its gate threshold voltage range (1.0–3.0 V) ensures strong enhancement-mode turn-on with standard 3.3 V or 5 V microcontroller outputs. The SI4320DY-T1-GE3 thus enables direct interface with low-voltage logic without level-shifting circuitry.
What is the safe operating area (SOA) limitation for SI4320DY-T1-GE3 in linear mode?
The SI4320DY-T1-GE3 SOA curve shows DC operation limited by RDS(on) at VDS < 10 V and by thermal constraints above that. At VDS = 15 V, maximum DC current is ~5 A; at VDS = 30 V, it drops to ~1.5 A. These limits derive directly from the RthJA = 67 °C/W and TJ(max) = 150 °C specs. The SI4320DY-T1-GE3 is not intended for sustained linear-mode use.
How does the body diode performance of SI4320DY-T1-GE3 compare to external Schottky diodes in synchronous rectification?
The SI4320DY-T1-GE3 body diode has VSD = 0.72–1.1 V at IS = 2.9 A and trr = 45–70 ns - competitive with medium-voltage Schottky diodes. Its integrated nature eliminates parasitic inductance and saves board space. However, unlike discrete Schottkys, the SI4320DY-T1-GE3 body diode conduction is inseparable from MOSFET operation and must be managed via gate timing.
Is SI4320DY-T1-GE3 qualified for automotive applications?
No - the SI4320DY-T1-GE3 is not AEC-Q101 qualified and lacks automotive-grade screening, extended temperature validation, or PPAP documentation. It is designed for commercial/industrial computing and power supply applications. For automotive use, engineers should select Vishay's AEC-Q101-qualified alternatives such as the SQ series, not the SI4320DY-T1-GE3.
SI4320DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4320DY-T1-GE3 FAQ
1.How can I place an order for SI4320DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4320DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4320DY-T1-GE3 reliable?
The price and inventory of SI4320DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4320DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4320DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4320DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4320DY-T1-GE3?
SI4320DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4320DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4320DY-T1-GE3?
For technical support, including SI4320DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4320DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4320DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4320DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4320DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4320DY-T1-GE3?
All SI4320DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4320DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4320DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4320DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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