My Inquiry
My Account
Vishay Siliconix SI4336DY-T1-E3
- Part No.:
- SI4336DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4336DY-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 17A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,838
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI4336DY-T1-E3 from Vishay Siliconix is an N-channel 30-V (D-S) MOSFET optimized for synchronous buck low-side switching in notebook, server, and workstation power supplies. It delivers rDS(on) = 0.00325 Ω at VGS = 10 V, 25 A continuous drain current, 36 nC total gate charge, and operates across –55 °C to +150 °C junction temperature.
For engineers reviewing the SI4336DY-T1-E3 datasheet, SI4336DY-T1-E3 pinout, SI4336DY-T1-E3 application, or SI4336DY-T1-E3 equivalent, key selection criteria include ultra-low on-resistance, Qg-optimized switching performance, 100% Rg testing, RoHS-compliant lead-free packaging, and SO-8 thermal performance under high-current POL conditions.
Technical Context
This MOSFET employs Vishay's High-Density TrenchFET® Gen II technology to achieve sub-3.3 mΩ on-resistance at 10 V gate drive while maintaining robust avalanche capability (IAS = 50 A). Its gate threshold voltage (VGS(th) = 1.0–3.0 V) ensures reliable turn-on with standard logic-level controllers.
The device features low Crss (415 pF) and Ciss (5600 pF), enabling fast switching with controlled EMI in high-frequency DC/DC converters. Thermal resistance RthJF = 13 °C/W (typ.) supports efficient heat transfer from junction to PCB foot in surface-mounted 1" × 1" FR4 layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V and 24 V input rail applications |
| rDS(on) | 0.00325 Ω @ VGS = 10 V, ID = 25 A - Enables <0.8 W conduction loss at 25 A, critical for high-efficiency POL stages |
| ID (continuous) | 25 A @ TA = 25 °C - Supports high-current CPU/GPU VRMs without forced airflow |
| Qg | 36 nC (typ.) @ VDS = 15 V, ID = 20 A - Balances switching speed and gate driver loading in 300–1000 kHz converters |
| RthJA | 29 °C/W (10 sec), 67 °C/W (steady state) - Defines thermal derating limits on standard FR4 boards |
| VGS(th) | 1.0–3.0 V - Ensures full enhancement with 3.3 V or 5 V gate drivers; avoids partial turn-on in noise-prone environments |
| Crss | 415 pF - Limits Miller-induced shoot-through risk during hard-switching transitions |
Pinout & Package
SI4336DY-T1-E3 is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–8 follow JEDEC MS-012AC outline; drain terminals are internally paralleled across pins 1, 2, 3, 4, 5, 6, and 8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 8 | Drain (D) | High-current output node; electrically common; connects directly to PCB ground plane via exposed pad for thermal and electrical performance |
| 7 | Gate (G) | Control input; requires low-inductance routing and series gate resistor to manage dV/dt and ringing |
| Source (S) | Source (S) | Return path for load current; referenced to controller ground; used for current sensing in high-side sensing configurations |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low rDS(on) | 0.00325 Ω @ 10 V enables >95% efficiency in 25 A, 12 V→1.2 V buck converters at 500 kHz |
| Qg-optimized design | 36 nC total gate charge reduces switching losses by ~22% vs. legacy SO-8 MOSFETs with same rDS(on) |
| 100% Rg tested | Guarantees gate resistance ≤2.0 Ω, ensuring consistent turn-on timing and minimizing gate oscillation risk |
| Avalanche rated | IAS = 50 A (L = 0.1 mH) supports robust operation during transient overloads and inductive kickback events |
| RoHS-compliant lead-free | T1-E3 suffix confirms Pb-free terminations meeting JEDEC J-STD-020 reflow profile requirements |
Applications
| Notebook VRM | Server DDR Memory Regulator |
|---|---|
Use Scenario: Point-of-load regulation for CPU core voltage in thin-and-light notebooks with strict thermal envelope. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 600–800 kHz with 30 ns rise/fall times. Use Value: 0.00325 Ω rDS(on) reduces conduction loss by 35% vs. 4.5 mΩ alternatives, lowering board temperature by up to 12 °C at 20 A. | Use Scenario: Single-phase 12 V → 1.2 V regulator supplying DDR4/DDR5 memory subsystems in dual-socket servers. IC Role / Device Role / Timing Role: Low-side switch in high-current (22 A steady-state) buck stage; driven by integrated PWM controller with 4.5 V gate bias. Use Value: 0.0042 Ω rDS(on) @ 4.5 V ensures stable regulation under dynamic load steps without gate drive boost circuitry. |
| Workstation GPU Power Stage | Industrial FPGA Core Supply |
Use Scenario: High-density power delivery for discrete GPU modules requiring >20 A per phase with minimal footprint. IC Role / Device Role / Timing Role: Low-side MOSFET in interleaved 2-phase buck; handles pulsed currents up to 70 A (IDM). Use Value: 50 A avalanche rating prevents failure during GPU burst workloads with rapid di/dt transients. | Use Scenario: Reliable core supply for Xilinx Kintex or Intel Stratix FPGAs in fanless industrial enclosures operating at 70 °C ambient. IC Role / Device Role / Timing Role: Low-side switch in 300 kHz buck converter; leverages –55 °C to +150 °C TJ range for extended lifetime. Use Value: RthJA = 29 °C/W (10 sec) allows short-term 25 A bursts without exceeding 135 °C junction limit. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | rDS(on) = 0.0037 Ω @ 10 V; Qg = 42 nC; TO-252 package | Larger footprint and higher RthJA (75 °C/W) limits current density in space-constrained designs | Prefer SI4336DY-T1-E3 for SO-8 layout compatibility and lower thermal resistance |
| DMN3026LSD-13 | rDS(on) = 0.0031 Ω @ 10 V; Qg = 32 nC; same SO-8 package but no 100% Rg test | Lacks guaranteed gate resistance spec, increasing risk of inconsistent switching in multi-phase sync designs | Choose SI4336DY-T1-E3 when gate drive timing predictability is required for phase interleaving |
Compared with IRF7470PBF and DMN3026LSD-13, SI4336DY-T1-E3 offers the lowest combination of rDS(on), Qg, and RthJA in SO-8, with production-tested Rg ensuring gate timing stability-critical for high-reliability, multi-phase VRMs where thermal margin and phase matching are design constraints.
Availability
SI4336DY-T1-E3 is available at Aetrix Electronics and suitable for notebook VRMs, server memory regulators, and workstation GPU power stages requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.
Supply support for SI4336DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The Si4336DY belongs to Vishay's TrenchFET® Gen II power MOSFET family, engineered specifically for high-current, high-frequency synchronous buck converters in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current for SI4336DY-T1-E3 at 70 °C ambient?
At TA = 70 °C, SI4336DY-T1-E3 supports 20 A continuous drain current with appropriate PCB copper area. This rating assumes surface mounting on a 1" × 1" FR4 board per Vishay's test condition. Derating is required above 70 °C ambient due to its RthJA = 67 °C/W steady-state thermal resistance. SI4336DY-T1-E3 must be thermally coupled to ground planes to sustain this current without exceeding TJ = 150 °C.
Does SI4336DY-T1-E3 support 4.5 V gate drive in synchronous rectifier applications?
Yes, SI4336DY-T1-E3 is fully specified for 4.5 V gate drive: rDS(on) = 0.0042 Ω at VGS = 4.5 V and ID = 22 A. Its VGS(th) range (1.0–3.0 V) ensures strong enhancement at 4.5 V, making it suitable for controller ICs without bootstrap or charge-pump circuits. SI4336DY-T1-E3 maintains low conduction loss and fast switching (tr = 16–25 ns) under these conditions.
Is SI4336DY-T1-E3 pin-compatible with other SO-8 N-channel MOSFETs?
SI4336DY-T1-E3 uses the standard SO-8 footprint with drain-connected pins 1, 2, 3, 4, 5, 6, and 8, gate on pin 7, and source on pin 7's adjacent pad. While physical pinout matches JEDEC MS-012AC, functional compatibility depends on rDS(on), Qg, and thermal performance-not just pin count. SI4336DY-T1-E3 is not a drop-in replacement for all SO-8 MOSFETs; verify gate drive strength and layout thermal relief before substitution.
What is the avalanche energy rating of SI4336DY-T1-E3?
SI4336DY-T1-E3 is rated for single-pulse avalanche current IAS = 50 A with L = 0.1 mH, corresponding to an avalanche energy of approximately 125 mJ. This rating is validated per AEC-Q101 stress test methods and supports robustness against inductive switching transients in buck converter freewheeling paths. SI4336DY-T1-E3 does not specify repetitive avalanche capability.
How does the 100% Rg test benefit SI4336DY-T1-E3 in multi-phase designs?
The 100% Rg test guarantees gate resistance ≤2.0 Ω for every SI4336DY-T1-E3 unit, ensuring matched turn-on timing across parallel phases. In multi-phase VRMs, this minimizes current imbalance and reduces RMS current stress on individual MOSFETs. Without this test, gate resistance variation could cause up to 15% phase current skew-making SI4336DY-T1-E3 especially valuable for high-precision, high-reliability computing power delivery.
SI4336DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.25mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5600 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4336DY-T1-E3 FAQ
1.How can I place an order for SI4336DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4336DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4336DY-T1-E3 reliable?
The price and inventory of SI4336DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4336DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4336DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4336DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4336DY-T1-E3?
SI4336DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4336DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4336DY-T1-E3?
For technical support, including SI4336DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4336DY-T1-E3 requirements.
6.How does Aetrix verify that SI4336DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4336DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4336DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4336DY-T1-E3?
All SI4336DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4336DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4336DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4336DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4336DY-T1-E3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
