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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4346DY-T1-E3

Name: SI4346DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4346DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4346DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4346DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 5.9A 8SO

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Product details

Overview

SI4346DY-T1-E3 from Vishay Siliconix is an N-channel 30-V (D-S) TrenchFET® Gen II Power MOSFET in SO-8 package, with R_DS(on) = 0.023 Ω at V_GS = 10 V, 8 A continuous drain current, and 6.5 nC total gate charge - optimized for high-side DC/DC conversion in notebook and server power stages.

For engineers reviewing the SI4346DY-T1-E3 datasheet, SI4346DY-T1-E3 pinout, SI4346DY-T1-E3 application, or SI4346DY-T1-E3 equivalent, key selection criteria include low R_DS(on) at 4.5 V (0.025 Ω), 100 % R_g tested gate resistance, halogen-free compliance per IEC 61249-2-21, and thermal performance validated on 1" × 1" FR4 board.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve enhanced conduction efficiency and fast switching dynamics. Its gate threshold voltage (0.7–2.0 V) enables reliable turn-on with standard logic-level drivers, and its low Q_gd/Q_g ratio (1.1/6.5 nC) supports efficient hard-switching operation in synchronous buck converters.

The device integrates a body diode with V_SD = 0.75–1.1 V at I_S = 2.2 A and exhibits controlled reverse recovery (t_rr = 20–35 ns), making it suitable for both high-side and low-side configurations where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24-V input rails and transient margin in point-of-load converters
R_DS(on) @ 10 V	0.023 Ω - enables ≤1.5 W conduction loss at 8 A, critical for thermally constrained notebook PCBs
I_D (continuous)	8 A @ T_A = 25 °C - supports mid-power CPU/GPU VRMs without forced airflow
Q_g	6.5 nC - reduces driver power demand and switching loss in 300–1000 kHz DC/DC topologies
R_thJA	74 °C/W (steady state) - defines thermal derating curve for SO-8 layout on standard FR4
V_GS(th)	0.7–2.0 V - ensures robust gate drive margin with 3.3 V or 5 V controllers
V_SD	0.75–1.1 V - limits body-diode conduction loss during synchronous rectification dead time

Pinout & Package

SO-8 (narrow-body, MS-012 compliant) surface-mount package with exposed drain pad for thermal enhancement; 100 % R_g tested and halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D), Source (S), Gate (G)	Pins 1–4 and 6–8 are parallel-connected Drain terminals; Pin 5 is Gate; Pins 2–4 and 6–7 are Source - dual-source/dual-drain configuration lowers parasitic inductance and improves current sharing

Key Features

Feature	Design Value
TrenchFET® Gen II architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling higher power density in SO-8 footprint
100 % R_g tested	Ensures consistent gate drive timing and eliminates outliers in high-volume synchronous converter designs
Low Q_gd/Q_g ratio (0.17)	Reduces Miller-induced switching delay and improves controllability under high dV/dt conditions
Body diode t_rr = 20–35 ns	Minimizes reverse recovery energy loss and EMI generation in hard-switched topologies

Applications

High-Side DC/DC Conversion – Notebook	High-Side DC/DC Conversion – Server
Use Scenario: Primary switch in 12 V → 1.2 V synchronous buck converter supplying CPU core voltage. IC Role / Device Role / Timing Role: High-side power switch operating at 500 kHz with 3.3 V gate drive from integrated controller. Use Value: 0.023 Ω R_DS(on) at 10 V reduces conduction loss by ~22 % vs. comparable 30-V MOSFETs, improving full-load efficiency by 0.8–1.2 %.	Use Scenario: High-side FET in multiphase VRM for Xeon-class processors with tight thermal envelope. IC Role / Device Role / Timing Role: Fast-switching power transistor driven by dedicated gate driver IC with 6.5 nC Q_g compatibility. Use Value: Dual-drain/source pinout lowers package inductance, reducing voltage overshoot and improving phase-current balance across paralleled phases.
Notebook Logic DC/DC – Low-Side	Desktop Power Management – High-Side
Use Scenario: Synchronous rectifier in 5 V → 3.3 V buck converter powering chipset I/O rails. IC Role / Device Role / Timing Role: Low-side switch conducting up to 7.5 A at V_GS = 4.5 V, leveraging 0.025 Ω R_DS(on). Use Value: Low V_GS(th) (0.7–2.0 V) ensures full enhancement with 3.3 V logic drivers, eliminating external level-shifting circuitry.	Use Scenario: High-side switch in 24 V → 5 V intermediate bus converter for desktop motherboard peripherals. IC Role / Device Role / Timing Role: 30-V rated MOSFET handling 24-V nominal input with 20 % transient margin and 8 A peak load. Use Value: R_thJA = 74 °C/W allows operation at 70 °C ambient without heatsink, simplifying mechanical design in space-constrained ATX layouts.

High-Side DC/DC Conversion – Notebook

High-Side DC/DC Conversion – Server

Use Scenario: Primary switch in 12 V → 1.2 V synchronous buck converter supplying CPU core voltage.

IC Role / Device Role / Timing Role: High-side power switch operating at 500 kHz with 3.3 V gate drive from integrated controller.

Use Value: 0.023 Ω R_DS(on) at 10 V reduces conduction loss by ~22 % vs. comparable 30-V MOSFETs, improving full-load efficiency by 0.8–1.2 %.

Use Scenario: High-side FET in multiphase VRM for Xeon-class processors with tight thermal envelope.

IC Role / Device Role / Timing Role: Fast-switching power transistor driven by dedicated gate driver IC with 6.5 nC Q_g compatibility.

Use Value: Dual-drain/source pinout lowers package inductance, reducing voltage overshoot and improving phase-current balance across paralleled phases.

Notebook Logic DC/DC – Low-Side

Desktop Power Management – High-Side

Use Scenario: Synchronous rectifier in 5 V → 3.3 V buck converter powering chipset I/O rails.

IC Role / Device Role / Timing Role: Low-side switch conducting up to 7.5 A at V_GS = 4.5 V, leveraging 0.025 Ω R_DS(on).

Use Value: Low V_GS(th) (0.7–2.0 V) ensures full enhancement with 3.3 V logic drivers, eliminating external level-shifting circuitry.

Use Scenario: High-side switch in 24 V → 5 V intermediate bus converter for desktop motherboard peripherals.

IC Role / Device Role / Timing Role: 30-V rated MOSFET handling 24-V nominal input with 20 % transient margin and 8 A peak load.

Use Value: R_thJA = 74 °C/W allows operation at 70 °C ambient without heatsink, simplifying mechanical design in space-constrained ATX layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si4336DY-T1-E3	R_DS(on) = 0.019 Ω @ 10 V, 10 A I_D, same SO-8 package but higher gate charge (8.5 nC)	Better conduction loss at high current, but increased driver loss and slower switching	Select when conduction loss dominates over switching loss, e.g., low-frequency (<300 kHz) high-current VRMs
IRF7470PBF	30 V, R_DS(on) = 0.022 Ω @ 10 V, SO-8, but no 100 % R_g test and higher Q_g (12 nC)	Higher gate drive power and less predictable turn-on timing in high-speed control loops	Select only if cost sensitivity outweighs timing consistency requirements in non-critical power stages

Compared with Si4336DY-T1-E3 and IRF7470PBF, SI4346DY-T1-E3 offers optimal balance of low R_DS(on), moderate Q_g, and guaranteed R_g matching - making it preferred for mid-frequency, medium-current synchronous buck converters where thermal and timing predictability are jointly critical.

Availability

SI4346DY-T1-E3 is available at Aetrix Electronics and suitable for notebook VRMs, server multiphase regulators, and desktop intermediate bus converters requiring stable component supply, lead-free compliance, and verified thermal performance on standard FR4.

Supply support for SI4346DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The Si43xxDY series targets high-efficiency, space-constrained DC/DC conversion, with TrenchFET® Gen II technology delivering optimized R_DS(on)-Q_g trade-offs for synchronous buck topologies in portable and enterprise computing platforms.

FAQ

What is the maximum continuous drain current rating for SI4346DY-T1-E3 at 70 °C ambient temperature?

The SI4346DY-T1-E3 supports 6.5 A continuous drain current at T_A = 70 °C with surface mounting on a 1" × 1" FR4 board. This rating reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes no additional heatsinking. The SI4346DY-T1-E3 must be operated within its Safe Operating Area (SOA) limits, especially under pulsed conditions, to avoid secondary breakdown.

Does SI4346DY-T1-E3 have a specified gate resistance value, and is it production-tested?

Yes, the SI4346DY-T1-E3 has a typical gate resistance (R_g) of 0.5 Ω, with a guaranteed range of 0.25–0.75 Ω. Crucially, every unit undergoes 100 % R_g testing during manufacturing - a key differentiator that ensures consistent gate drive timing and minimizes variation in switching behavior across production lots of SI4346DY-T1-E3.

Can SI4346DY-T1-E3 be used as a low-side synchronous rectifier with 4.5 V gate drive?

Yes, the SI4346DY-T1-E3 is fully specified for low-side operation with 4.5 V gate drive: its R_DS(on) is 0.025 Ω at V_GS = 4.5 V and I_D = 7.5 A. This makes it suitable for synchronous rectification in 5 V or 3.3 V output converters where controller outputs are logic-level. The SI4346DY-T1-E3 body diode forward voltage (0.75–1.1 V) further supports efficient freewheeling during dead time.

What is the thermal resistance from junction to foot (R_thJF) for SI4346DY-T1-E3, and why does it matter?

The SI4346DY-T1-E3 has a typical R_thJF of 22 °C/W (maximum 27 °C/W), measured from junction to the exposed drain pad (foot). This parameter is critical for designs using copper pour or thermal vias under the SO-8 drain leads - it enables accurate estimation of junction temperature rise when the drain is soldered directly to a large PCB copper area, bypassing the higher R_thJA path through air.

Is SI4346DY-T1-E3 halogen-free, and which standard does it meet?

Yes, the SI4346DY-T1-E3 is halogen-free in accordance with IEC 61249-2-21. This compliance is explicitly stated in the Vishay datasheet (Document Number: 72958, Rev. E) and applies to the Si4346DY-T1-E3 variant. It confirms absence of chlorine and bromine-based flame retardants in the molding compound, supporting RoHS-compliant and environmentally regulated end equipment.

SI4346DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.31W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4346DY-T1-E3 FAQ

1.How can I place an order for SI4346DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4346DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4346DY-T1-E3 reliable?

The price and inventory of SI4346DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4346DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4346DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4346DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4346DY-T1-E3?

SI4346DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4346DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4346DY-T1-E3?

For technical support, including SI4346DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4346DY-T1-E3 requirements.

6.How does Aetrix verify that SI4346DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4346DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4346DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4346DY-T1-E3?

All SI4346DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4346DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4346DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4346DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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