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Vishay Siliconix SI4346DY-T1-GE3
- Part No.:
- SI4346DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4346DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 5.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,480
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Product details
Overview
SI4346DY-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 30-V TrenchFET® Gen II power MOSFET in SO-8 package, delivering RDS(on) = 0.023 Ω at VGS = 10 V, 8 A continuous drain current, and 6.5 nC total gate charge. It serves as a high-side switch in notebook DC/DC converters and low-side switch in logic-level DC/DC stages.
For engineers reviewing the SI4346DY-T1-GE3 datasheet, SI4346DY-T1-GE3 pinout, SI4346DY-T1-GE3 application, or SI4346DY-T1-GE3 equivalent, key selection criteria include its 30-V VDS, 0.025 Ω RDS(on) at 4.5 V drive, 150 °C max junction temperature, SO-8 thermal performance (RthJA = 74 °C/W steady-state), and guaranteed 100% Rg testing.
Technical Context
This MOSFET uses TrenchFET® Gen II silicon technology to achieve low on-resistance with enhanced switching speed and robust body diode recovery (trr = 20–35 ns). Its gate threshold voltage (VGS(th) = 0.7–2.0 V) enables reliable turn-on with standard 3.3 V or 5 V logic drivers.
The device is optimized for synchronous rectification and high-frequency DC/DC conversion, featuring low Qgd/Qg ratio (1.1/6.5 nC), fast turn-off delay (40–60 ns), and tight RDS(on) distribution across temperature (normalized to 1.0 at 25 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V and 24 V input rail applications |
| RDS(on) | 0.023 Ω at VGS = 10 V, ID = 8 A - Enables <190 mW conduction loss at full load |
| ID (continuous) | 8 A at TA = 25 °C - Supports compact high-current point-of-load designs |
| Qg | 6.5 nC typical - Reduces gate drive power and enables >1 MHz switching |
| VGS(th) | 0.7–2.0 V - Ensures clean turn-on with 3.3 V microcontroller GPIO or PWM controller outputs |
| RthJA | 74 °C/W (steady-state) - Requires ≤1.3 W dissipation for safe 150 °C junction operation on FR4 |
| tr/tf | 11–17 ns / 7–11 ns - Minimizes switching transition losses in hard-switched topologies |
Pinout & Package
SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement; 5.0 mm × 4.0 mm footprint, 1.75 mm max height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–12 V drive; Rg = 0.25–0.75 Ω internal gate resistance |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground in low-side configuration |
| 3 (S) | Source | Second source connection; paralleled internally with Pin 2 to reduce source inductance |
| 4 (S) | Source | Third source connection; reduces common-source inductance in high-dI/dt switching |
| 5 (D) | Drain | Main power output terminal; electrically connected to exposed backside metal pad |
| 6 (D) | Drain | Second drain connection; shares same internal node as Pin 5 and thermal pad |
| 7 (D) | Drain | Third drain connection; improves current sharing and thermal spreading to PCB copper |
| 8 (D) | Drain | Fourth drain connection; maximizes thermal interface area to heatsink or inner-layer copper pour |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen II silicon | Delivers 12% lower RDS(on) vs. prior generation at same die size, improving power density |
| 100% Rg tested | Ensures consistent gate drive timing and eliminates outliers in parallel-MOSFET layouts |
| Halogen-free per IEC 61249-2-21 | Meets RoHS 3 and JEDEC J-STD-609A Class 1 requirements without compromising reliability |
| Low Qgd/Qg ratio (0.17) | Reduces Miller-induced shoot-through risk and improves controllability in synchronous buck stages |
| Fast body diode trr | 20–35 ns reverse recovery supports ZVS-assisted topologies and minimizes diode conduction loss |
Applications
| High-Side DC/DC Conversion | Notebook Logic DC/DC (Low-Side) |
|---|---|
|
Use Scenario: Primary high-side switch in 12 V-to-1.5 V synchronous buck converter for CPU core power. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; operates at 300–600 kHz. Use Value: 0.023 Ω RDS(on) limits conduction loss to <150 mW at 8 A, enabling thermally constrained thin-bezel notebook designs. |
Use Scenario: Low-side synchronous rectifier in 5 V-to-3.3 V buck converter powering chipset I/O rails. IC Role / Device Role / Timing Role: Complementary switch completing current path during freewheeling phase; driven with dead-time control. Use Value: Fast 7–11 ns fall time and low 0.75 V VSD minimize reverse recovery loss and improve efficiency by ≥0.8% at 5 A load. |
| Desktop VRM High-Side Switch | Server Point-of-Load Converter |
|
Use Scenario: High-current high-side FET in multi-phase 12 V input VRM supplying GPU memory subsystems. IC Role / Device Role / Timing Role: Phase-leg switch operating with interleaved PWM at 500 kHz; handles peak currents up to 30 A pulsed. Use Value: 30 A pulsed drain rating and 150 °C TJ(max) support sustained high-power bursts without thermal throttling. |
Use Scenario: Compact 48 V-to-12 V intermediate bus converter in 1U server power supply. IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant topology; driven by isolated gate driver. Use Value: 0.025 Ω RDS(on) at 4.5 V gate drive allows direct control from 5 V logic, eliminating level-shifter components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4336DY-T1-GE3 | Higher RDS(on) = 0.032 Ω @ 10 V, same SO-8 package and VDS = 30 V | Suitable where thermal margin permits higher conduction loss; lower cost alternative | Select when board layout cannot accommodate additional cooling and 0.009 Ω higher RDS(on) is acceptable |
| IRF7470PBF | Same RDS(on) spec (0.023 Ω @ 10 V) but TO-252 package; higher RthJA = 90 °C/W | Used in through-hole or high-reliability industrial boards requiring larger creepage/clearance | Choose only if SO-8 assembly is unavailable or thermal design relies on PCB copper area rather than package convection |
Compared with Si4336DY-T1-GE3 and IRF7470PBF, the SI4346DY-T1-GE3 provides optimal balance of low RDS(on), fast switching, and SO-8 thermal performance-making it preferred for space-constrained, high-efficiency notebook and server DC/DC stages where gate drive voltage is ≥4.5 V.
Availability
SI4346DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook power delivery, desktop VRMs, and server point-of-load converters requiring stable component supply, halogen-free compliance, and consistent TrenchFET® Gen II performance.
Supply support for SI4346DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics since 1962.
The SI4346DY-T1-GE3 belongs to Vishay's TrenchFET® Gen II power MOSFET family, engineered specifically for high-frequency, high-efficiency DC/DC conversion in portable computing and data center infrastructure.
FAQ
What is the maximum continuous drain current rating for SI4346DY-T1-GE3 at 70 °C ambient temperature?
The SI4346DY-T1-GE3 supports 6.5 A continuous drain current at TA = 70 °C under standard FR4 board conditions (1" × 1"). This rating reflects derating due to thermal resistance (RthJA = 74 °C/W steady-state) and ensures junction temperature remains below 150 °C. The value is confirmed in the Absolute Maximum Ratings table of Vishay document 72958, Rev. E.
Does SI4346DY-T1-GE3 have an integrated body diode, and what is its forward voltage?
Yes, the SI4346DY-T1-GE3 includes an intrinsic body diode rated for 2.2 A continuous source current. Its forward voltage is 0.75–1.1 V at IS = 2.2 A and VGS = 0 V, measured at 25 °C. This diode enables synchronous rectification and freewheeling operation in buck and flyback topologies, as specified in the "Diode Forward Voltage" parameter of the datasheet.
Is SI4346DY-T1-GE3 suitable for 3.3 V gate drive applications?
Yes, the SI4346DY-T1-GE3 is fully compatible with 3.3 V logic-level gate drive: its gate threshold voltage (VGS(th)) ranges from 0.7 V to 2.0 V, and it delivers RDS(on) = 0.030 Ω at VGS = 3.0 V and ID = 6.8 A. This ensures robust enhancement and low on-resistance even with 3.3 V microcontroller or PWM controller outputs.
What is the thermal resistance from junction to foot (RthJF) for SI4346DY-T1-GE3?
The SI4346DY-T1-GE3 has a maximum junction-to-foot thermal resistance of 27 °C/W under steady-state conditions. This parameter quantifies heat transfer from the silicon die directly to the exposed drain pad, enabling effective thermal coupling to PCB copper pours or heatsinks. It is documented in the Thermal Resistance Ratings table of Vishay document 72958.
How does the 100% Rg test benefit circuit design using SI4346DY-T1-GE3?
The 100% Rg test on every SI4346DY-T1-GE3 unit ensures gate resistance falls within 0.25–0.75 Ω, guaranteeing consistent turn-on/turn-off timing across production lots. This eliminates timing skew in paralleled MOSFET configurations and simplifies gate driver sizing-critical for high-reliability notebook and server power stages where mismatched switching can cause current imbalance or shoot-through.
SI4346DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.31W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4346DY-T1-GE3 FAQ
1.How can I place an order for SI4346DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4346DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4346DY-T1-GE3 reliable?
The price and inventory of SI4346DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4346DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4346DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4346DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4346DY-T1-GE3?
SI4346DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4346DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4346DY-T1-GE3?
For technical support, including SI4346DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4346DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4346DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4346DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4346DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4346DY-T1-GE3?
All SI4346DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4346DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4346DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4346DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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