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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4368DY-T1-E3

Name: SI4368DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4368DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4368DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4368DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 17A 8SO

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Product details

Overview

SI4368DY-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® Gen II power MOSFET optimized for low-side DC/DC conversion in notebook VRM modules and fixed telecom systems. It features a 30 V drain-source rating, 25 A continuous drain current at T_J = 150 °C, R_DS(on) of 3.2 mΩ at V_GS = 10 V, and extremely low Q_gd (6.5 nC) to minimize switching losses.

For engineers reviewing the SI4368DY-T1-E3 datasheet, SI4368DY-T1-E3 pinout, SI4368DY-T1-E3 application, or SI4368DY-T1-E3 equivalent, this device is selected for high-efficiency synchronous buck converters where fast switching, low conduction loss, and thermal performance on FR4 PCBs are critical design requirements.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low gate-drain charge (Q_gd = 6.5 nC) and input capacitance (C_iss = 8340 pF), enabling high-frequency operation with reduced Miller effect and improved hard-switching efficiency. Its R_DS(on) remains stable across V_GS = 4.5–10 V, supporting both 5 V and 12 V gate drive systems.

The SO-8 package provides a thermally enhanced footprint with low junction-to-foot resistance (R_thJF = 13 °C/W typical), and its 100 % R_g tested gate resistance (0.8–1.8 Ω) ensures consistent turn-on/turn-off timing across production lots.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rail systems and 5 V/3.3 V output VRMs.
R_DS(on)	3.2 mΩ @ V_GS = 10 V, I_D = 25 A - Enables <1 W conduction loss at 25 A, critical for high-current CPU/GPU power stages.
Q_gd	6.5 nC - Minimizes Miller plateau duration and dv/dt-induced false turn-on in synchronous rectification.
I_D (continuous)	25 A @ T_J = 150 °C - Supports high-current density designs without forced air cooling on standard 1" × 1" FR4 boards.
C_iss	8340 pF @ V_DS = 15 V - Defines gate drive strength requirement; ~53 nC total Q_g demands ≥1 A peak gate driver capability.
R_thJA	67 °C/W (steady state) - Limits junction temperature rise to ~112 °C at 25 A conduction loss (1.9 W), assuming 25 °C ambient.

Pinout & Package

SI4368DY-T1-E3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads for thermal enhancement. The package measures 4.9 mm × 3.9 mm × 1.55 mm (D × E × A) and uses JEDEC-compliant SOIC-N pin spacing (1.27 mm pitch).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel drain terminals connected internally to the MOSFET die's drain metallization and exposed copper pad - primary heat path and high-current return path.
6	Gate (G)	Single gate input terminal - requires low-inductance routing and local 10 nF bypass capacitor to suppress ringing during fast switching.
Source (S)	Source (S)	Terminal shared by pins 1–5 and 7–8 via internal source bonding wires - forms the reference node for gate drive and current sensing in low-side configuration.

Key Features

Feature	Design Value
Extremely low Q_gd	6.5 nC - Reduces Miller-induced delay and enables >1 MHz switching in synchronous buck topologies without shoot-through risk.
TrenchFET® Gen II architecture	Optimized cell pitch and trench depth - delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation for same die size.
100 % R_g tested	Gate resistance 0.8–1.8 Ω - Ensures predictable turn-on time and eliminates need for external gate resistor tuning in volume production.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - qualifies for green electronics manufacturing and export to EU/China markets.

Applications

Server VRM Power Stage	Notebook CPU Core Regulator
Use Scenario: High-current, multi-phase synchronous buck converter supplying 0.8–1.2 V to Xeon or EPYC processors under dynamic load transients up to 200 A/µs. IC Role / Device Role / Timing Role: Low-side power switch conducting during bottom-half of switching cycle; handles majority of RMS current and thermal dissipation. Use Value: 3.2 mΩ R_DS(on) and 67 °C/W R_thJA enable ≤1.9 W conduction loss at 25 A, reducing heatsink requirements in space-constrained 1U chassis.	Use Scenario: Compact 2–4 phase VRM on thin-and-light laptop motherboards delivering 1–2 V to mobile CPUs with strict thermal envelope limits. IC Role / Device Role / Timing Role: Low-side FET operating at 500 kHz–1 MHz with 4.5 V gate drive from integrated controller; conducts during freewheeling interval. Use Value: 3.6 mΩ R_DS(on) @ 4.5 V ensures efficient operation with 5 V logic-level drivers, eliminating need for level-shifting circuitry.
Fixed Telecom DC/DC Module	Industrial PoL Converter
Use Scenario: Isolated or non-isolated 48 V input to 3.3/5/12 V output module in telecom shelf power supplies requiring >95 % efficiency at full load. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck stage; operates continuously under high ambient temperature (70–85 °C). Use Value: 150 °C max junction temperature rating and -55 °C to 150 °C operating range support reliable operation in sealed, fanless telecom enclosures.	Use Scenario: Point-of-load regulator in programmable logic controller (PLC) backplanes converting 24 V to 3.3 V for FPGA I/O banks with tight ripple and transient response specs. IC Role / Device Role / Timing Role: Low-side switch in discrete buck controller design; selected for predictable Q_gd and minimal gate drive power consumption. Use Value: 53 nC total gate charge and 0.8–1.2 Ω R_g allow precise dead-time control and reduce gate driver IC power dissipation by ~30 % vs. higher-Q_g alternatives.

Server VRM Power Stage

Notebook CPU Core Regulator

Use Scenario: High-current, multi-phase synchronous buck converter supplying 0.8–1.2 V to Xeon or EPYC processors under dynamic load transients up to 200 A/µs.

IC Role / Device Role / Timing Role: Low-side power switch conducting during bottom-half of switching cycle; handles majority of RMS current and thermal dissipation.

Use Value: 3.2 mΩ R_DS(on) and 67 °C/W R_thJA enable ≤1.9 W conduction loss at 25 A, reducing heatsink requirements in space-constrained 1U chassis.

Use Scenario: Compact 2–4 phase VRM on thin-and-light laptop motherboards delivering 1–2 V to mobile CPUs with strict thermal envelope limits.

IC Role / Device Role / Timing Role: Low-side FET operating at 500 kHz–1 MHz with 4.5 V gate drive from integrated controller; conducts during freewheeling interval.

Use Value: 3.6 mΩ R_DS(on) @ 4.5 V ensures efficient operation with 5 V logic-level drivers, eliminating need for level-shifting circuitry.

Fixed Telecom DC/DC Module

Industrial PoL Converter

Use Scenario: Isolated or non-isolated 48 V input to 3.3/5/12 V output module in telecom shelf power supplies requiring >95 % efficiency at full load.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck stage; operates continuously under high ambient temperature (70–85 °C).

Use Value: 150 °C max junction temperature rating and -55 °C to 150 °C operating range support reliable operation in sealed, fanless telecom enclosures.

Use Scenario: Point-of-load regulator in programmable logic controller (PLC) backplanes converting 24 V to 3.3 V for FPGA I/O banks with tight ripple and transient response specs.

IC Role / Device Role / Timing Role: Low-side switch in discrete buck controller design; selected for predictable Q_gd and minimal gate drive power consumption.

Use Value: 53 nC total gate charge and 0.8–1.2 Ω R_g allow precise dead-time control and reduce gate driver IC power dissipation by ~30 % vs. higher-Q_g alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 3.5 mΩ @ 10 V; Q_gd = 8.2 nC; SO-8 package; no R_g test screening	Higher switching loss in >500 kHz designs due to +26 % Q_gd; less consistent gate timing across lot	Acceptable for cost-sensitive telecom PSUs where switching frequency ≤300 kHz and gate drive strength is ample.
NTMFS4C06N	R_DS(on) = 2.8 mΩ @ 10 V; Q_gd = 5.9 nC; PowerSO-8 package; 100 % R_g tested; halogen-free	Lower conduction loss but tighter layout constraints due to different thermal pad geometry and leadframe design	Preferred for new designs targeting <1.5 W conduction loss at 25 A, provided PCB land pattern is updated per ON Semi's recommended footprint.

Compared with IRF7470PBF and NTMFS4C06N, the SI4368DY-T1-E3 offers the best balance of ultra-low Q_gd, production-tested R_g, and proven thermal performance on standard SO-8 footprints-making it ideal for high-reliability, high-frequency VRM upgrades without board rework.

Availability

SI4368DY-T1-E3 is available at Aetrix Electronics and suitable for server VRM power stages, notebook CPU core regulators, and fixed telecom DC/DC modules requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for SI4368DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and parametric consistency.

The SI4368DY-T1-E3 belongs to Vishay's TrenchFET® Gen II family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low Q_gd and stable R_DS(on) are mandatory.

FAQ

What is the maximum continuous drain current rating for SI4368DY-T1-E3 at 70 °C ambient?

The SI4368DY-T1-E3 supports 20 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board, per the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under natural convection; forced airflow or enhanced copper pour can extend usable current capacity.

Does SI4368DY-T1-E3 require a gate resistor for stable operation?

The SI4368DY-T1-E3 has a tested gate resistance of 0.8–1.8 Ω and is designed for direct connection to gate drivers capable of ≥1 A peak output. A small series gate resistor (1–5 Ω) is recommended to dampen ringing and control dV/dt, but no large limiting resistor is needed due to the built-in R_g consistency.

Is SI4368DY-T1-E3 suitable for 4.5 V gate drive applications?

Yes - the SI4368DY-T1-E3 specifies R_DS(on) = 3.6 mΩ at V_GS = 4.5 V and I_D = 22 A, confirming full enhancement with standard 5 V logic-level controllers. Its V_GS(th) range (0.6–1.8 V) ensures reliable turn-on even with gate drive tolerances.

What is the safe operating area (SOA) limitation for SI4368DY-T1-E3 in linear mode?

The SI4368DY-T1-E3 SOA curve shows DC operation is limited by R_DS(on) at V_DS < 5 V and by thermal constraints above that. At V_DS = 10 V, maximum DC current is ~5 A; at V_DS = 20 V, it drops to ~2.5 A - always verify junction temperature using R_thJA = 67 °C/W and P_D = I² × R_DS(on).

How does the thermal performance of SI4368DY-T1-E3 compare between junction-to-ambient and junction-to-foot?

The SI4368DY-T1-E3 has R_thJA = 67 °C/W (steady state) and R_thJF = 13 °C/W (steady state), meaning most heat flows through the drain pad into the PCB. Effective thermal design requires a minimum 1" × 1" copper pour connected to all seven drain pins - reducing system-level thermal resistance by up to 5× vs. minimal copper.

SI4368DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 8340 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4368DY-T1-E3 FAQ

1.How can I place an order for SI4368DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4368DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4368DY-T1-E3 reliable?

The price and inventory of SI4368DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4368DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4368DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4368DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4368DY-T1-E3?

SI4368DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4368DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4368DY-T1-E3?

For technical support, including SI4368DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4368DY-T1-E3 requirements.

6.How does Aetrix verify that SI4368DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4368DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4368DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4368DY-T1-E3?

All SI4368DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4368DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4368DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4368DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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