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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4368DY-T1-GE3

Name: SI4368DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4368DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4368DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4368DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 17A 8SO

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Product details

Overview

SI4368DY-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® Gen II power MOSFET optimized for low-side DC/DC conversion in notebook, server, and VRM modules. It features 30 V V_DS, 2.9 mΩ R_DS(on) at V_GS = 10 V, 25 A continuous drain current, ultra-low Q_gd (6.5 nC), and SO-8 package with halogen-free and RoHS-compliant construction.

For engineers reviewing the SI4368DY-T1-GE3 datasheet, SI4368DY-T1-GE3 pinout, SI4368DY-T1-GE3 application, or SI4368DY-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJA = 67 °C/W), gate charge profile, diode recovery characteristics, and real-world use context for high-efficiency synchronous buck designs.

Technical Context

This MOSFET employs trench-based silicon architecture to minimize conduction and switching losses simultaneously. Its extremely low Q_gd/Q_g ratio (≈12%) and 355 pF Crss support fast, low-loss turn-off in high-frequency synchronous rectification.

The device integrates a robust body diode with 42–60 ns reverse recovery time and 0.66–1.1 V forward voltage at 2.9 A, enabling efficient freewheeling in non-isolated DC/DC topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V nominal with margin for transient spikes in point-of-load converters.
R_DS(on)	2.6 mΩ typ. at V_GS = 10 V, 25 A - Enables <1 W conduction loss at 20 A in 12 V→1 V VRMs.
Q_gd	6.5 nC - Reduces Miller-induced switching delay and improves controllability during hard-switching transitions.
I_D (continuous)	25 A at T_A = 25 °C - Sustains high-current operation on standard FR4 PCBs with 1" × 1" copper area.
R_thJA	67 °C/W (steady state) - Limits junction rise to ~110 °C at 2.2 W dissipation, supporting 150 °C max T_J.
V_GS(th)	0.6–1.8 V - Ensures reliable enhancement-mode turn-on with 3.3 V or 5 V gate drivers.
C_iss/C_oss/C_rss	8340 / 850 / 355 pF - Low Crss minimizes voltage-dependent gate drive demand and EMI generation.

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain paddle for thermal enhancement. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled drain terminals - primary current path and thermal conduction path to PCB copper.
6	Gate (G)	Control terminal requiring ≤1.2 Ω gate resistance to limit ringing and ensure stable 10 V switching.
Source (S)	Source (S)	Terminal 6 is Gate; Source is pins 1–5 and 7–8 are Drain; Source connects externally via pins 1–5 and 7–8 tied to ground plane - no dedicated source pin; source node is formed by PCB routing to drain-connected leads.

Key Features

Feature	Design Value
TrenchFET® Gen II architecture	Delivers 20% lower R_DS(on) × Q_g figure-of-merit vs. prior-generation SO-8 MOSFETs at 30 V.
100% R_g tested	Guarantees gate resistance between 0.8–1.8 Ω - critical for predictable turn-on timing and EMI control.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated industrial and computing end equipment.
Low Q_gd/Q_g ratio	~12% (6.5/53 nC) - minimizes Miller plateau duration and enables tighter dead-time control in synchronous buck controllers.
Fast body diode recovery	t_rr = 42–60 ns - reduces reverse recovery loss and associated voltage overshoot during high-dI/dt freewheeling.

Applications

Notebook VRM Output Stage	Server Point-of-Load Converter
Use Scenario: High-current, high-frequency synchronous buck stage delivering 1–2 V @ 30–60 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Low-side power switch handling freewheeling current and conducting majority of output current during bottom-switch conduction phase. Use Value: 2.6 mΩ R_DS(on) and 6.5 nC Q_gd reduce total power loss below 1.8 W at 40 A, improving VRM efficiency >92% at full load.	Use Scenario: 12 V input → 0.8 V output conversion in rack-mounted server power supplies with strict thermal constraints. IC Role / Device Role / Timing Role: Primary low-side switch in multiphase interleaved buck regulators operating at 500 kHz–1 MHz. Use Value: 8340 pF C_iss and 355 pF Crss enable clean gate drive waveforms with minimal shoot-through risk under fast dV/dt conditions.
Telecom DC/DC Module	Industrial Embedded Power Supply
Use Scenario: Compact 48 V → 5 V/3.3 V isolated or non-isolated converter in fixed telecom infrastructure equipment. IC Role / Device Role / Timing Role: Low-side FET in secondary-side synchronous rectification or post-regulator stage. Use Value: 0.66–1.1 V V_SD and 42–60 ns t_rr cut diode conduction loss by >40% versus discrete Schottky alternatives.	Use Scenario: Fanless, convection-cooled embedded controller power supply requiring long-term reliability at 70 °C ambient. IC Role / Device Role / Timing Role: Main low-side switch in 24 V → 3.3 V buck converter powering FPGA, MCU, and interface ICs. Use Value: R_thJA = 67 °C/W and -55 to +150 °C T_J rating ensure stable operation without forced air, even at 17 A continuous load.

Notebook VRM Output Stage

Server Point-of-Load Converter

Use Scenario: High-current, high-frequency synchronous buck stage delivering 1–2 V @ 30–60 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side power switch handling freewheeling current and conducting majority of output current during bottom-switch conduction phase.

Use Value: 2.6 mΩ R_DS(on) and 6.5 nC Q_gd reduce total power loss below 1.8 W at 40 A, improving VRM efficiency >92% at full load.

Use Scenario: 12 V input → 0.8 V output conversion in rack-mounted server power supplies with strict thermal constraints.

IC Role / Device Role / Timing Role: Primary low-side switch in multiphase interleaved buck regulators operating at 500 kHz–1 MHz.

Use Value: 8340 pF C_iss and 355 pF Crss enable clean gate drive waveforms with minimal shoot-through risk under fast dV/dt conditions.

Telecom DC/DC Module

Industrial Embedded Power Supply

Use Scenario: Compact 48 V → 5 V/3.3 V isolated or non-isolated converter in fixed telecom infrastructure equipment.

IC Role / Device Role / Timing Role: Low-side FET in secondary-side synchronous rectification or post-regulator stage.

Use Value: 0.66–1.1 V V_SD and 42–60 ns t_rr cut diode conduction loss by >40% versus discrete Schottky alternatives.

Use Scenario: Fanless, convection-cooled embedded controller power supply requiring long-term reliability at 70 °C ambient.

IC Role / Device Role / Timing Role: Main low-side switch in 24 V → 3.3 V buck converter powering FPGA, MCU, and interface ICs.

Use Value: R_thJA = 67 °C/W and -55 to +150 °C T_J rating ensure stable operation without forced air, even at 17 A continuous load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N04L	40 V V_DS, 3.6 mΩ R_DS(on) @ 10 V, TO-252 package - higher voltage rating but larger footprint and 2× R_thJA.	Preferred where 40 V system margin or higher avalanche energy (E_AS = 120 mJ) is required; unsuitable for space-constrained SO-8 layouts.	Select when board layout allows DPAK and 40 V rating adds design margin; avoid if SO-8 footprint and thermal performance are mandatory.
ON Semiconductor NTMFS4C09NT1G	30 V V_DS, 2.7 mΩ R_DS(on) @ 10 V, SO-8 - nearly identical R_DS(on), but Q_gd = 8.2 nC and C_rss = 420 pF.	Slightly higher switching loss in >1 MHz designs due to elevated Crss; otherwise drop-in compatible in VRM and telecom applications.	Valid alternative where Vishay supply continuity is constrained; verify gate driver slew rate capability given higher Q_gd.

Compared with SI4368DY-T1-GE3, the IPP036N04L trades SO-8 compactness for higher voltage headroom and ruggedness, while the NTMFS4C09NT1G matches voltage and on-resistance but increases switching loss by ~18% due to higher Crss and Q_gd.

Availability

SI4368DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook VRM modules, server point-of-load converters, and fixed telecom DC/DC applications requiring stable component supply, halogen-free compliance, and proven thermal performance on standard FR4 PCBs.

Supply support for SI4368DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and resistive components with emphasis on high-reliability, high-efficiency solutions.

The SI4368DY-T1-GE3 belongs to Vishay's TrenchFET® Gen II family, engineered specifically for high-frequency, high-current synchronous buck converters in computing and communications infrastructure where low Q_gd and tight R_DS(on) distribution are critical.

FAQ

What is the maximum continuous drain current for SI4368DY-T1-GE3 at 70 °C ambient temperature?

The SI4368DY-T1-GE3 supports 20 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board, per its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_thJA = 67 °C/W and 150 °C maximum junction temperature. The SI4368DY-T1-GE3 must be used within this boundary to ensure long-term reliability.

Does SI4368DY-T1-GE3 have a specified avalanche rating?

No, the SI4368DY-T1-GE3 datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS) ratings. While it can withstand limited avalanche stress due to its trench structure, Vishay does not guarantee or characterize avalanche capability for the SI4368DY-T1-GE3. Designers should avoid operation in avalanche mode and implement proper snubbing or clamping if inductive loads are present.

Is SI4368DY-T1-GE3 pin-compatible with other SO-8 N-channel MOSFETs like Si4800BDY?

The SI4368DY-T1-GE3 uses standard SO-8 (MS-012) pinout with Drain on pins 1–5 and 7–8, Gate on pin 6, and Source connected through PCB routing - not a dedicated pin. While physically compatible with SO-8 footprints, electrical compatibility depends on R_DS(on), Q_g, and thermal behavior. The Si4800BDY has different R_DS(on) (4.5 mΩ) and Q_g (60 nC), so direct substitution requires circuit revalidation. SI4368DY-T1-GE3 is not a guaranteed pin-to-pin replacement for Si4800BDY.

What is the typical gate threshold voltage range for SI4368DY-T1-GE3?

The SI4368DY-T1-GE3 has a gate threshold voltage V_GS(th) ranging from 0.6 V minimum to 1.8 V maximum at I_D = 250 µA and T_J = 25 °C. This wide range ensures reliable turn-on with 3.3 V logic-level drivers while maintaining noise immunity. The SI4368DY-T1-GE3 remains fully enhanced above 2.5 V V_GS, supporting standard 5 V gate drive systems.

How does the halogen-free designation affect SI4368DY-T1-GE3's material composition and reliability?

The "-GE3" suffix confirms SI4368DY-T1-GE3 meets IEC 61249-2-21 for halogen-free printed wiring board materials, meaning brominated flame retardants (BFRs) and chlorine content are restricted to <900 ppm each. This does not impact electrical performance or reliability - accelerated life testing shows no degradation in R_DS(on), gate oxide integrity, or thermal cycling endurance versus lead-free variants. SI4368DY-T1-GE3 maintains full qualification per JESD22-A108.

SI4368DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 8340 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4368DY-T1-GE3 FAQ

1.How can I place an order for SI4368DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4368DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4368DY-T1-GE3 reliable?

The price and inventory of SI4368DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4368DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4368DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4368DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4368DY-T1-GE3?

SI4368DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4368DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4368DY-T1-GE3?

For technical support, including SI4368DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4368DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4368DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4368DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4368DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4368DY-T1-GE3?

All SI4368DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4368DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4368DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4368DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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