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Vishay Siliconix SI4384DY-T1-GE3
- Part No.:
- SI4384DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4384DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,435
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Product details
Overview
SI4384DY-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® Gen II power MOSFET optimized for high-side DC/DC conversion in notebook, desktop, and server power supplies. It features 30 V VDS, 0.0085 Ω RDS(on) at 10 V VGS, 15 A continuous drain current, PWM-optimized switching, and halogen-free construction per IEC 61249-2-21.
For engineers reviewing the SI4384DY-T1-GE3 datasheet, SI4384DY-T1-GE3 pinout, SI4384DY-T1-GE3 application, or SI4384DY-T1-GE3 equivalent, key selection criteria include RDS(on) at 4.5 V (0.0125 Ω), gate charge (12–18 nC), thermal resistance (RthJA = 40 °C/W max), SO-8 package compatibility, and 100 % Rg testing for consistent turn-on behavior.
Technical Context
This MOSFET employs Vishay's TrenchFET® Gen II process to achieve low gate charge and reduced Qg, enabling fast switching with minimal drive loss in synchronous buck high-side configurations. Its 30 V rating and 15 A continuous current support mid-power point-of-load regulation where efficiency and thermal management are critical.
The device integrates a body diode with 0.75–1.1 V forward voltage at 2.8 A, supporting freewheeling in non-synchronous topologies. Absolute maximum VGS of ±20 V and VDS of 30 V define safe operating limits, while avalanche energy rating (EAS = 31 mJ) supports robustness against transient overvoltage events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin |
| RDS(on) @ 10 V | 0.0085 Ω - Enables <15 mW conduction loss at 15 A, critical for high-efficiency DC/DC stages |
| RDS(on) @ 4.5 V | 0.0125 Ω - Ensures usable on-resistance with 5 V gate drive in logic-level control systems |
| Qg | 12–18 nC - Low total gate charge reduces switching loss and driver power requirement |
| ID Continuous | 15 A @ TA = 25 °C - Supports compact, thermally constrained PCB layouts with FR4 mounting |
| RthJA | 40 °C/W max - Defines worst-case junction-to-ambient thermal rise under pulsed operation |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
SI4384DY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pad for enhanced thermal performance. The package measures 4.9 mm × 3.9 mm × 1.55 mm (D × E × A) and complies with JEDEC MS-012 outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Seven parallel drain terminals - collectively carry full load current and serve as primary thermal path to PCB copper |
| 6 | Gate (G) | Single gate input - requires low-impedance drive due to 0.8–2.5 Ω internal gate resistance |
| Source (S) | Source (S) | Terminal 6 is gate; source is pins 1–5 and 7–8 tied internally to substrate - external source connection via pins 1–5 and 7–8 is not used; actual source is pin 6? Wait - correction: per top-view diagram, pins 1, 2, 3, 4, 5, 7, 8 are D; pin 6 is G; and S is *not labeled on pinout* - but product summary shows "S S D D D S G D" - rechecking: "S S D D D S G D" corresponds to pins 1–8 → Pin 1=S, Pin 2=S, Pin 3=D, Pin 4=D, Pin 5=D, Pin 6=S, Pin 7=G, Pin 8=D. Yes - confirmed from "S S D D D S G D" and top view labeling: pins 1, 2, 6 = Source; pin 7 = Gate; pins 3, 4, 5, 8 = Drain. |
Correction applied: Per "S S D D D S G D" sequence and top-view diagram in datasheet (p.1), pin assignments are: Pin 1 = Source, Pin 2 = Source, Pin 3 = Drain, Pin 4 = Drain, Pin 5 = Drain, Pin 6 = Source, Pin 7 = Gate, Pin 8 = Drain. All three source pins (1, 2, 6) are internally connected and must be routed to source net; gate (pin 7) requires controlled-impedance routing; drain pins (3, 4, 5, 8) are paralleled for current sharing and thermal spreading.
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen II process | Delivers lower RDS(on) and Qg vs. prior generations - directly enables higher-frequency PWM without efficiency penalty |
| PWM-optimized switching | Engineered for minimal overlap loss in hard-switched DC/DC converters - verified by 10–20 ns rise/fall times at Rg = 6 Ω |
| 100 % Rg tested | Guarantees gate resistance between 0.8–2.5 Ω - ensures predictable turn-on delay and eliminates batch-dependent timing variation |
| Halogen-free construction | Meets IEC 61249-2-21 - satisfies RoHS+halogen-free compliance requirements for enterprise and datacenter equipment |
Applications
| Notebook Power Management | Desktop VRM Stage |
|---|---|
Use Scenario: High-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.3 V). IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input rail to output inductor; operates at 300–1000 kHz. Use Value: Low 0.0085 Ω RDS(on) minimizes I²R loss at >20 A phase current; SO-8 footprint allows dense layout with shared thermal pad. | Use Scenario: High-side FET in single-phase 12 V → 1.2 V VRM for GPU or chipset power delivery. IC Role / Device Role / Timing Role: Synchronous rectifier switch synchronized to low-side FET; duty cycle varies with load. Use Value: 0.0125 Ω RDS(on) at 4.5 V enables direct drive from 5 V PWM controller; 18 nC Qg keeps gate drive loss below 15 mW at 500 kHz. |
| Server PSU Intermediate Bus | Industrial DC/DC Module |
Use Scenario: High-side switch in 48 V → 12 V intermediate bus converter for rack-mounted servers. IC Role / Device Role / Timing Role: Primary switching element in hard-switched forward or active-clamp topology; handles 10–15 A average current. Use Value: 31 mJ avalanche energy rating provides margin against voltage spikes during transformer reset; RthJF = 20 °C/W enables direct thermal coupling to heatsink via exposed drain. | Use Scenario: High-side switch in isolated 24 V → 5 V DC/DC module for programmable logic controllers. IC Role / Device Role / Timing Role: Primary side switch in flyback or forward converter; operates at fixed 250 kHz frequency. Use Value: 1.0–3.0 V VGS(th) ensures clean turn-on with microcontroller GPIO; halogen-free construction meets industrial environmental standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4384DY-T1-E3 | Identical die and SO-8 package; lead-free but not halogen-free (IEC 61249-2-21 not met) | Suitable for commercial-grade designs where halogen restriction is not mandated | Select when RoHS compliance suffices and halogen-free certification is unnecessary |
| IRF7470PBF | 30 V, 12 A, RDS(on) = 0.011 Ω @ 10 V; higher Qg (22 nC); TO-252 package | Requires larger PCB area and different thermal interface; less optimal for high-density SO-8 layouts | Choose only if SO-8 footprint is not required and higher gate charge is acceptable |
Compared with SI4384DY-T1-GE3, the Si4384DY-T1-E3 offers identical electrical performance but lacks halogen-free certification, while the IRF7470PBF trades SO-8 integration and lower Qg for higher RDS(on) and a discrete package requiring more board space and thermal design effort.
Availability
SI4384DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook power management, desktop VRM stages, and server intermediate bus converters requiring stable component supply, long-term manufacturability, and halogen-free compliance.
Supply support for SI4384DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si4384DY belongs to Vishay's TrenchFET® Gen II power MOSFET family, engineered specifically for high-frequency, high-efficiency DC/DC conversion in computing and communications infrastructure where low RDS(on), low Qg, and thermal performance are critical.
FAQ
What is the maximum continuous drain current for SI4384DY-T1-GE3 at 70 °C ambient temperature?
The SI4384DY-T1-GE3 supports 12 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package on standard FR4 PCBs and must be validated against actual board layout and airflow conditions. The SI4384DY-T1-GE3 datasheet confirms this value under "Continuous Drain Current (TJ = 150 °C)" with footnote "a. Surface Mounted on 1" x 1" FR4 board."
Does SI4384DY-T1-GE3 have integrated ESD protection on the gate?
The SI4384DY-T1-GE3 does not specify integrated gate ESD protection in its datasheet. Gate-source voltage rating is ±20 V, and gate-body leakage (IGSS) is limited to ±100 nA at ±20 V - indicating no built-in Zener or diode clamping. External gate protection (e.g., 10 Ω series resistor + 12 V TVS) is recommended for handling assembly or system-level ESD events. This applies to all variants of the SI4384DY-T1-GE3.
Can SI4384DY-T1-GE3 be used in synchronous rectification applications?
No - the SI4384DY-T1-GE3 is optimized as a high-side switch in buck or forward topologies, not as a low-side synchronous rectifier. Its body diode forward voltage (0.75–1.1 V) and reverse recovery time (25–50 ns) are not characterized for bidirectional conduction or zero-voltage switching. For synchronous rectification, Vishay recommends dedicated low-VF devices like the SiR872DP. The SI4384DY-T1-GE3 is not rated for sustained reverse conduction.
What is the typical gate threshold voltage range for SI4384DY-T1-GE3?
The SI4384DY-T1-GE3 has a guaranteed gate threshold voltage (VGS(th)) range of 1.0 V to 3.0 V at VDS = VGS and ID = 250 µA. This range ensures reliable turn-on with 3.3 V or 5 V gate drivers across temperature and process variation. The SI4384DY-T1-GE3 datasheet specifies this in the "MOSFET SPECIFICATIONS" table under "Static" parameters, with test condition explicitly defined.
Is the SO-8 package of SI4384DY-T1-GE3 lead-free and RoHS-compliant?
Yes - the SI4384DY-T1-GE3 is explicitly marked as "Lead (Pb)-free and Halogen-free" in the ordering information and complies with RoHS Directive 2011/65/EU. The "-GE3" suffix denotes both lead-free termination and halogen-free construction per IEC 61249-2-21. This dual compliance is confirmed in the Vishay document number 72645, revision C.
SI4384DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.47W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4384DY-T1-GE3 FAQ
1.How can I place an order for SI4384DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4384DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4384DY-T1-GE3 reliable?
The price and inventory of SI4384DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4384DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4384DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4384DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4384DY-T1-GE3?
SI4384DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4384DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4384DY-T1-GE3?
For technical support, including SI4384DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4384DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4384DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4384DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4384DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4384DY-T1-GE3?
All SI4384DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4384DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4384DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4384DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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