Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4386DY-T1-GE3

Name: SI4386DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4386DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI4386DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4386DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,104

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI4386DY-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® Gen II power MOSFET optimized for PWM in DC/DC conversion, featuring 30 V V_DS, 7.0 mΩ R_DS(on) at 10 V_GS, 16 A continuous drain current (T_A = 25 °C), 11 nC total gate charge, and SO-8 package. It serves as a high-efficiency synchronous rectifier or main switch in PC motherboard VRMs.

For engineers reviewing the SI4386DY-T1-GE3 datasheet, SI4386DY-T1-GE3 pinout, SI4386DY-T1-GE3 application, or SI4386DY-T1-GE3 equivalent, key selection criteria include R_DS(on) at 4.5 V_GS, thermal resistance to ambient (R_thJA = 40 °C/W max), avalanche energy rating (E_AS = 20 mJ), and halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET employs trench-gate silicon technology with reduced gate charge and fast switching characteristics, enabling high-frequency operation in buck converters. Its 100 % R_g tested gate resistance (0.8–2.5 Ω) ensures consistent turn-on/turn-off timing across production lots.

The device integrates a body diode with 0.75–1.1 V forward voltage at 2.8 A, supporting synchronous rectification without external diodes. Thermal design is guided by junction-to-foot resistance (R_thJF = 22 °C/W max) and steady-state junction-to-ambient resistance (71–85 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in PC VRMs
R_DS(on)	7.0 mΩ @ V_GS = 10 V, 16 A - Enables <1 W conduction loss at 16 A in high-current CPU power stages
I_D (continuous)	16 A @ T_A = 25 °C - Supports >100 W output in compact SO-8 footprint with standard FR4 layout
Q_g	11 nC (typ.) @ V_DS = 15 V - Reduces gate drive power and enables >1 MHz switching in PWM controllers
E_AS	20 mJ - Withstands single-pulse inductive energy during load dump or short-circuit events
R_thJA	40 °C/W (max, t ≤ 10 s) - Defines thermal derating curve for pulsed operation on 1" × 1" PCB
V_GS(th)	1.5–2.5 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level drivers

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement. Pin 1–8 arranged in dual-row configuration; pins 1, 2, 3, 4, 5, 6, 7, 8 correspond to Source, Source, Source, Gate, Drain, Drain, Drain, Drain respectively per top-view marking.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for low-side switching; tied to power ground plane
4	Gate	Control terminal requiring <12 V drive; isolated from drain by 20 V max V_GS rating
5–8	Drain	High-current output node; internally connected to exposed metal pad for thermal conduction to PCB

Key Features

Feature	Design Value
TrenchFET® Gen II architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling higher current density in SO-8
PWM-optimized switching	12 ns turn-on delay and 9 ns rise time support stable operation up to 2 MHz in digital VRMs
100 % R_g tested	Guarantees gate resistance between 0.8–2.5 Ω, minimizing timing skew in paralleled configurations
Halogen-free construction	Complies with IEC 61249-2-21, eliminating brominated flame retardants for RoHS-compliant assembly

Applications

PC Motherboard VRM	Laptop DC/DC Converter
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with 16 A peak current per phase. Use Value: 7.0 mΩ R_DS(on) reduces conduction loss by >30 % vs. legacy 12 mΩ SO-8 MOSFETs, improving VRM efficiency by 1.2 % at full load.	Use Scenario: Compact 12 V to 1.2 V point-of-load regulator on thin-and-light notebook motherboards. IC Role / Device Role / Timing Role: Main power switch in 500 kHz–1.5 MHz buck stage with tight thermal constraints. Use Value: 11 nC Q_g lowers gate drive losses and allows use of low-power PWM controllers without external buffer stages.
Server Memory Regulator	Gaming GPU Power Stage
Use Scenario: DDR5 memory VDDQ regulator delivering 40 A via paralleled phases on dense server DIMM modules. IC Role / Device Role / Timing Role: Phase-leg switch with strict thermal budget due to limited airflow and adjacent BGA components. Use Value: R_thJF = 22 °C/W enables direct thermal coupling to inner-layer copper, reducing junction temperature rise by 18 °C vs. standard SO-8.	Use Scenario: High-transient GPU core voltage rail requiring robust avalanche capability during sudden load steps. IC Role / Device Role / Timing Role: High-side switch subjected to inductive kickback during rapid current slew. Use Value: 20 mJ E_AS rating withstands worst-case 30 V × 20 A × 0.33 µs transients without failure, eliminating need for snubbers.

PC Motherboard VRM

Laptop DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with 16 A peak current per phase.

Use Value: 7.0 mΩ R_DS(on) reduces conduction loss by >30 % vs. legacy 12 mΩ SO-8 MOSFETs, improving VRM efficiency by 1.2 % at full load.

Use Scenario: Compact 12 V to 1.2 V point-of-load regulator on thin-and-light notebook motherboards.

IC Role / Device Role / Timing Role: Main power switch in 500 kHz–1.5 MHz buck stage with tight thermal constraints.

Use Value: 11 nC Q_g lowers gate drive losses and allows use of low-power PWM controllers without external buffer stages.

Server Memory Regulator

Gaming GPU Power Stage

Use Scenario: DDR5 memory VDDQ regulator delivering 40 A via paralleled phases on dense server DIMM modules.

IC Role / Device Role / Timing Role: Phase-leg switch with strict thermal budget due to limited airflow and adjacent BGA components.

Use Value: R_thJF = 22 °C/W enables direct thermal coupling to inner-layer copper, reducing junction temperature rise by 18 °C vs. standard SO-8.

Use Scenario: High-transient GPU core voltage rail requiring robust avalanche capability during sudden load steps.

IC Role / Device Role / Timing Role: High-side switch subjected to inductive kickback during rapid current slew.

Use Value: 20 mJ E_AS rating withstands worst-case 30 V × 20 A × 0.33 µs transients without failure, eliminating need for snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 8.0 mΩ @ 10 V_GS; Q_g = 14 nC; same SO-8 package but non-halogen-free	Higher gate charge increases driver losses above 500 kHz; lacks halogen-free certification	Select when halogen-free compliance is not required and gate drive capability exceeds 14 nC
DMN3026LSD-13	R_DS(on) = 6.5 mΩ @ 10 V_GS; Q_g = 12.5 nC; lead-free only (not halogen-free); different pinout (G-S-D-S-D-S-D-G)	Lower R_DS(on) improves conduction loss, but incompatible pinout requires PCB redesign	Select only for new designs where layout revision is acceptable and maximum efficiency is prioritized

Compared with IRF7470PBF and DMN3026LSD-13, SI4386DY-T1-GE3 provides the optimal balance of low R_DS(on), moderate Q_g, halogen-free compliance, and verified SO-8 pin compatibility-making it suitable for drop-in replacement in existing PC VRM designs without requalification.

Availability

SI4386DY-T1-GE3 is available at Aetrix Electronics and suitable for PC motherboard VRMs, laptop DC/DC converters, and server memory regulators requiring stable component supply, long-term lifecycle assurance, and halogen-free manufacturing compliance.

Supply support for SI4386DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The Si4386DY belongs to Vishay's TrenchFET® Gen II family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space-constrained computing power supplies.

FAQ

What is the maximum continuous drain current for SI4386DY-T1-GE3 at 70 °C ambient temperature?

The SI4386DY-T1-GE3 supports 13 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes standard mounting on a 1" × 1" FR4 board. The SI4386DY-T1-GE3 must be used within this limit to maintain safe junction temperature below 150 °C.

Does SI4386DY-T1-GE3 support 4.5 V gate drive in logic-level applications?

Yes, SI4386DY-T1-GE3 is fully characterized for 4.5 V gate drive: its R_DS(on) is guaranteed at 9.5 mΩ (max) at V_GS = 4.5 V and I_D = 13.5 A. This makes the SI4386DY-T1-GE3 suitable for 5 V or 3.3 V logic-compatible PWM controllers without level-shifting circuitry.

What is the avalanche energy rating of SI4386DY-T1-GE3 and how is it validated?

The SI4386DY-T1-GE3 has a single-pulse avalanche energy rating of 20 mJ, measured under standardized test conditions (L = 0.1 mH, I_AS = 20 A). This rating is guaranteed by design and verified through qualification testing per Vishay's internal reliability standards-not production-tested per unit-but confirmed across wafer lots and package variants.

Is SI4386DY-T1-GE3 pin-compatible with earlier Si4386DY-T1-E3?

Yes, SI4386DY-T1-GE3 is mechanically and electrically pin-compatible with Si4386DY-T1-E3. Both share identical SO-8 packaging, pinout, and electrical specifications; the only difference is that SI4386DY-T1-GE3 adds halogen-free compliance per IEC 61249-2-21 while maintaining full backward compatibility with existing PCB layouts and schematics.

What thermal resistance values apply to SI4386DY-T1-GE3 in typical PCB mounting?

For SI4386DY-T1-GE3 mounted on a 1" × 1" FR4 board, the typical junction-to-ambient thermal resistance is 34 °C/W for t ≤ 10 s pulses and 71 °C/W at steady state. Junction-to-foot resistance is 18 °C/W typical, enabling direct thermal path to inner-layer copper planes when the exposed drain pad is soldered to a thermal pad.

SI4386DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.47W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4386DY-T1-GE3 FAQ

1.How can I place an order for SI4386DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4386DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4386DY-T1-GE3 reliable?

The price and inventory of SI4386DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4386DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4386DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4386DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4386DY-T1-GE3?

SI4386DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4386DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4386DY-T1-GE3?

For technical support, including SI4386DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4386DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4386DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4386DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4386DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4386DY-T1-GE3?

All SI4386DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4386DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4386DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4386DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …