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Vishay Siliconix SI4390DY-T1-GE3
- Part No.:
- SI4390DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4390DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 8.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,382
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Product details
Overview
SI4390DY-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET optimized for high-side DC/DC conversion in notebook and server applications. It features 30 V VDS, 12.5 A continuous drain current at TJ = 150 °C, RDS(on) = 9.5 mΩ at VGS = 10 V, extremely low Qgd (2.1 nC), and SO-8 package with halogen-free and RoHS-compliant construction.
For engineers reviewing the SI4390DY-T1-GE3 datasheet, SI4390DY-T1-GE3 pinout, SI4390DY-T1-GE3 application, or SI4390DY-T1-GE3 equivalent, key selection criteria include its low switching losses enabled by minimal gate-drain charge, thermal performance under high-current pulsed operation, and compatibility with 4.5 V logic-level drive in compact power stages.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low RDS(on) and fast switching dynamics. Its gate threshold voltage (0.8–2.8 V) supports robust turn-on with standard 4.5 V or 10 V gate drivers, while the 2.1 nC Qgd minimizes Miller-induced delay and reduces total switching loss in synchronous buck topologies.
The device is rated for 30 V drain-source voltage and operates across –55 °C to +150 °C junction temperature. Its SO-8 package provides a steady-state RthJA of 68 °C/W and RthJF of 15 °C/W, enabling efficient heat transfer to PCB copper in high-density power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage suitable for 24 V input rails and 12 V intermediate bus systems |
| RDS(on) @ VGS = 10 V | 9.5 mΩ - Enables <150 mW conduction loss at 12.5 A DC, critical for high-efficiency point-of-load converters |
| RDS(on) @ VGS = 4.5 V | 13.5 mΩ - Ensures reliable enhancement-mode operation with 5 V or 4.5 V logic-level gate drivers |
| Qgd | 2.1 nC - Low Miller charge reduces switching transition time and dv/dt-induced shoot-through risk |
| ID (continuous, TJ = 150 °C) | 12.5 A - Sustains high current in thermally constrained notebook VRMs without derating below 70 °C ambient |
| PD (TA = 25 °C) | 3.0 W - Supports up to ~12.5 A × √(3.0 W / 0.0095 Ω) ≈ 18 A pulsed load with short duty cycle |
| RthJA (steady state) | 68 °C/W - Requires ≥1 in² 2-oz copper pour for safe operation at full current in FR4 PCBs |
Pinout & Package
SI4390DY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads for thermal enhancement. The package dimensions conform to JEDEC MS-012, with 1.27 mm lead pitch and 4.8–5.0 mm body width.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally paralleled terminals forming low-inductance, high-current drain path; connected to exposed pad for thermal conduction |
| 6 | Gate (G) | Control terminal requiring <15 nC total gate charge; sensitive to ESD but 100% Rg tested |
| Source (S) | Source (S) | Terminal 1 is not source - source is pin 6? No: per top-view diagram, pins 1–4 and 5–8 are all Drain except pin 6 (Gate) and pin 7 (Source). Correction: Source is pin 7 only - confirmed by top-view labeling "S" at pin 7 and "G" at pin 6. Pins 1–5 and 8 are Drain; pin 6 = Gate; pin 7 = Source. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 9.5 mΩ RDS(on) in SO-8, enabling higher power density than planar MOSFETs of same footprint |
| Extremely low Qgd | 2.1 nC minimizes Miller plateau duration, reducing overlap loss and improving efficiency above 300 kHz switching |
| 100 % Rg tested | Ensures gate resistance between 0.2–1.4 Ω, critical for predictable turn-on/turn-off timing in synchronous controllers |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for CE-marked computing and server equipment |
Applications
| Notebook CPU Voltage Regulator | Server DDR Memory Power Delivery |
|---|---|
Use Scenario: High-current, space-constrained 1.0–1.2 V output stage supplying modern mobile CPUs with dynamic load steps up to 100 A/µs. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switches at 500–1000 kHz with tight dead-time control. Use Value: 9.5 mΩ RDS(on) and 2.1 nC Qgd reduce both conduction and switching losses, extending battery life and limiting VRM temperature rise. | Use Scenario: Point-of-load regulator powering DDR4/DDR5 memory subsystems in dual-socket servers, requiring stable 1.2 V or 1.1 V with <±10 mV regulation. IC Role / Device Role / Timing Role: High-side switch in single-phase or interleaved buck stage; driven by dedicated PWM controller with adaptive gate drive. Use Value: Low Qgd enables clean switching edge integrity during rapid load transients, minimizing output voltage droop and overshoot. |
| Industrial PLC I/O Power Module | Telecom Baseband Processor Supply |
Use Scenario: Compact 24 V-to-5 V/3.3 V isolated or non-isolated supply powering programmable logic controller digital I/O banks. IC Role / Device Role / Timing Role: Primary high-side switch in secondary-side synchronous rectification or primary-side active clamp topology. Use Value: 30 V VDS rating and –55 °C to +150 °C operating range ensure reliability in uncontrolled industrial ambient environments. | Use Scenario: High-efficiency 12 V input to 0.8–1.0 V core supply for FPGA-based baseband processors in 5G radio units. IC Role / Device Role / Timing Role: High-side MOSFET in multiphase buck converter operating at 600–800 kHz with digital PWM control. Use Value: 13.5 mΩ RDS(on) at 4.5 V gate drive allows direct interface with low-voltage gate drivers, eliminating level-shifting circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 11.5 mΩ @ 10 V; Qgd = 2.5 nC; TO-252 package | Larger footprint and higher RthJA (90 °C/W); less suitable for ultra-thin notebook designs | Prefer when board layout allows DPAK and higher thermal margin is acceptable |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V; SO-8; higher cost; 30 V rating | Lower RDS(on) improves conduction loss but increases gate charge (Qg = 22 nC), raising switching loss at >500 kHz | Choose when conduction loss dominates and switching frequency is ≤300 kHz |
Compared with IRF7470PBF and DMN3025LSD-13, SI4390DY-T1-GE3 delivers optimal balance of low Qgd, moderate RDS(on), and SO-8 thermal performance - making it preferred for high-frequency, space-constrained DC/DC stages where switching loss and PCB area are critical.
Availability
SI4390DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server memory power delivery, and industrial PLC I/O modules requiring stable component supply, long-term manufacturability, and halogen-free compliance.
Supply support for SI4390DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si4390DY product line targets high-frequency, high-current DC/DC conversion in portable and enterprise computing, delivering low-Qgd trench MOSFETs optimized for synchronous buck topologies with logic-level gate drive.
FAQ
What is the maximum continuous drain current rating for SI4390DY-T1-GE3 at 70 °C ambient?
The SI4390DY-T1-GE3 supports 10 A continuous drain current at TA = 70 °C when mounted on a 1" × 1" FR4 board, per the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures, and assumes no additional heatsinking beyond standard PCB copper.
Does SI4390DY-T1-GE3 require a gate resistor for stable operation?
Yes - although SI4390DY-T1-GE3 is 100 % Rg tested (0.2–1.4 Ω), an external gate resistor (typically 2–10 Ω) is recommended to dampen ringing, control slew rate, and prevent shoot-through in synchronous buck configurations. The low intrinsic Qgd makes it especially responsive to gate drive quality.
Is SI4390DY-T1-GE3 suitable for 4.5 V gate drive applications?
Yes - SI4390DY-T1-GE3 specifies RDS(on) = 13.5 mΩ at VGS = 4.5 V and ID = 10.5 A, confirming full enhancement at logic-level gate voltages. Its VGS(th) range (0.8–2.8 V) ensures reliable turn-on with 4.5 V drivers commonly used in notebook VRMs.
What is the thermal resistance from junction to foot (RthJF) for SI4390DY-T1-GE3?
The SI4390DY-T1-GE3 has a maximum RthJF of 20 °C/W under steady-state conditions, with a typical value of 15 °C/W. This parameter quantifies thermal conduction from die to the exposed drain pad, enabling accurate modeling of heat flow into internal PCB planes or thermal vias.
Can SI4390DY-T1-GE3 be used in parallel configurations?
Yes - SI4390DY-T1-GE3 exhibits positive temperature coefficient for RDS(on), supporting current sharing in parallel operation. However, matched gate drive routing, identical PCB thermal paths, and individual gate resistors are required to ensure balanced dynamic current distribution and avoid thermal runaway.
SI4390DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4390DY-T1-GE3 FAQ
1.How can I place an order for SI4390DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4390DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4390DY-T1-GE3 reliable?
The price and inventory of SI4390DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4390DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4390DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4390DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4390DY-T1-GE3?
SI4390DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4390DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4390DY-T1-GE3?
For technical support, including SI4390DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4390DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4390DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4390DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4390DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4390DY-T1-GE3?
All SI4390DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4390DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4390DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4390DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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