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Vishay Siliconix SI4398DY-T1-E3
- Part No.:
- SI4398DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4398DY-T1-E3.pdf
- Description:
- MOSFET N-CH 20V 19A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,492
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Product details
Overview
SI4398DY-T1-E3 from Vishay Siliconix is an N-channel, 20 V, ultra-low RDS(on) MOSFET in SO-8 package, delivering 0.0028 Ω at VGS = 10 V and 25 A continuous drain current at TA = 25 °C. It serves as a synchronous rectifier in low-power DC/DC converters with extremely low Qgd for minimized switching losses.
For engineers reviewing the SI4398DY-T1-E3 datasheet, SI4398DY-T1-E3 pinout, SI4398DY-T1-E3 application, or SI4398DY-T1-E3 equivalent, key selection criteria include its 20 V VDS, 0.0040 Ω RDS(on) at 4.5 V drive, 34–50 nC total gate charge, SO-8 thermal performance (RthJA = 67 °C/W), and 100% UIS-tested ruggedness for high-reliability POL and OR-ing designs.
Technical Context
The SI4398DY-T1-E3 employs trench MOSFET technology optimized for fast switching and low conduction loss in high-frequency synchronous buck topologies. Its gate threshold voltage (1.0–3.0 V) enables robust 4.5 V logic-level drive compatibility, while ultra-low Qgd (7.5 nC typ.) reduces Miller-induced turn-off delay and dv/dt-induced shoot-through risk.
Thermally, it features a dedicated drain-exposed SO-8 footprint with RthJF = 13 °C/W (typ.), enabling efficient heat transfer to PCB copper. The device is 100% rated for unclamped inductive switching (UIS) and avalanche energy (EAS = 80 mJ), supporting reliable operation under transient overloads in compact power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage compatible with 12 V input rails and 5/3.3 V output synchronous rectification. |
| RDS(on) @ 10 V | 0.0028 Ω max - Enables <10 mW conduction loss at 25 A, critical for >95% efficiency in low-voltage POL converters. |
| RDS(on) @ 4.5 V | 0.0040 Ω max - Ensures stable on-resistance with standard 5 V logic drivers, eliminating need for level-shifting gate circuits. |
| Qg / Qgd | 34–50 nC / 7.5 nC - Low Qgd minimizes Miller plateau duration, supporting >1 MHz switching without excessive gate drive power. |
| ID (TA = 25 °C) | 25 A - Continuous current rating suitable for 20–30 W point-of-load applications with 1"×1" FR4 layout. |
| RthJA | 67 °C/W (steady state) - Defines thermal limit for ambient-limited power dissipation; requires ≥1 in² 2-oz copper pour for full-rated operation. |
| EAS | 80 mJ - Avalanche energy rating validates robustness against inductive kickback in non-isolated DC/DC converters. |
Pinout & Package
SO-8 surface-mount package with exposed drain paddle for enhanced thermal conduction. Pin 1–8 follow standard SO-8 numbering (pin 1 = G, pins 2–4 & 6–8 = S/D parallel configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; accepts 0–12 V drive; 0.7–2.1 Ω gate resistance limits ringing and EMI during switching. |
| 2, 3, 4 | S (Source) | Common source node; electrically tied internally; used for return path and gate drive reference in synchronous rectifier layout. |
| 5 | D (Drain) | Main power output node; connected to exposed paddle; requires direct thermal connection to PCB ground plane for RthJF optimization. |
| 6, 7, 8 | D (Drain) | Parallel drain terminals; reduce current density and bond-wire inductance; improve current sharing in high-di/dt operation. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qgd | 7.5 nC typical - Reduces Miller-induced delay and improves controllability during hard-switching transitions. |
| 100% UIS tested | Validated per JEDEC JESD22-A116 - Guarantees single-pulse avalanche survivability up to 40 A and 80 mJ without degradation. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - Supports environmentally regulated industrial and telecom end-equipment. |
| Low RDS(on) temperature coefficient | Normalized RDS(on) ≈ 1.4× at 125 °C - Predictable conduction loss rise enables accurate thermal design margining. |
Applications
| Server VRM Output Stage | USB-C PD 20 W Adapter |
|---|---|
Use Scenario: High-efficiency, high-density 12 V → 1.2 V conversion in server CPU voltage regulators. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 0.0040 Ω RDS(on) at 4.5 V ensures <15 mW conduction loss per phase at 20 A, directly improving VRM efficiency by 0.3–0.5%. |
Use Scenario: Secondary-side synchronous rectification in compact USB-C Power Delivery adapters delivering 20 W (5 V/3 A or 9 V/2.22 A). IC Role / Device Role / Timing Role: Low-VDS N-channel switch replacing Schottky diode in flyback secondary, driven by controller's gate signal. Use Value: 0.0028 Ω RDS(on) at 10 V reduces rectifier loss by >60% vs. 40 V Schottky, enabling smaller heatsink and higher power density. |
| Industrial PLC I/O Module | 5G Small Cell PoE PSE |
Use Scenario: OR-ing function in redundant 24 V DC power inputs for programmable logic controller backplanes. IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET for ideal diode behavior, controlled by external comparator or dedicated OR-ing IC. Use Value: 20 V rating and 25 A current capability support dual 24 V input redundancy with <50 mV forward drop at full load, minimizing voltage loss and heat generation. |
Use Scenario: DC/DC post-regulator in Power over Ethernet (PoE) powered equipment (PD) for 5G small cell radios. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated flyback or active clamp forward converter supplying 12 V/1 A to RF front-end. Use Value: Extremely low Qgd enables clean turn-off under high dv/dt conditions common in PoE isolation transformers, reducing cross-conduction risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | 20 V, RDS(on) = 0.0032 Ω @ 4.5 V, Qg = 52 nC, SO-8 but no exposed drain pad | Higher RthJA (85 °C/W) limits power handling in thermally constrained layouts | Prefer SI4398DY-T1-E3 when board space is limited and thermal management relies on PCB copper area. |
| DMN2020LSD-13 | 20 V, RDS(on) = 0.0038 Ω @ 4.5 V, Qgd = 9.2 nC, same SO-8 footprint with exposed drain | Slightly higher Qgd increases Miller plateau time, requiring stronger gate driver for >1 MHz operation | Acceptable alternative if gate drive strength is ≥2 A peak and layout includes ≥1.5 in² 2-oz copper for thermal relief. |
Compared with IRF7470PBF and DMN2020LSD-13, the SI4398DY-T1-E3 offers the lowest combined RDS(on) × Qgd figure of merit (11.2 Ω·nC), enabling superior efficiency in high-frequency, high-current POL and OR-ing applications where both conduction and switching losses must be minimized.
Availability
SI4398DY-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLCs, and 5G small cell PoE PDs requiring stable component supply, lead-free compliance, and verified UIS ruggedness.
Supply support for SI4398DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The Si4398DY series targets high-efficiency, high-density DC/DC conversion in computing, communications, and industrial systems-designed specifically for synchronous rectification, OR-ing, and POL applications demanding ultra-low RDS(on) and fast switching.
FAQ
What is the maximum continuous drain current for SI4398DY-T1-E3 at 70 °C ambient temperature?
The SI4398DY-T1-E3 supports 20 A continuous drain current at TA = 70 °C on a 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations imposed by RthJA = 67 °C/W and junction temperature cap of 150 °C. For sustained 25 A operation, forced air or enhanced PCB copper is required. The SI4398DY-T1-E3 datasheet confirms this value under steady-state conditions with proper layout.
Does SI4398DY-T1-E3 support 4.5 V gate drive in synchronous rectifier applications?
Yes, the SI4398DY-T1-E3 is fully characterized at VGS = 4.5 V, with RDS(on) = 0.0040 Ω max and guaranteed turn-on at VGS(th) ≤ 3.0 V. Its low gate threshold and minimal RDS(on) shift across temperature make it suitable for 5 V logic-driven synchronous rectifiers without gate boosting. The SI4398DY-T1-E3 maintains stable performance down to 4.5 V, unlike many 20 V MOSFETs requiring ≥5.5 V for full enhancement.
Is SI4398DY-T1-E3 halogen-free and RoHS compliant?
Yes, the SI4398DY-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as explicitly stated in the Vishay datasheet (Document #73018, Rev. C). The "-E3" suffix denotes lead-free and halogen-free construction. This makes the SI4398DY-T1-E3 suitable for environmentally regulated markets including EU industrial equipment and telecom infrastructure.
What is the avalanche energy rating of SI4398DY-T1-E3, and how is it validated?
The SI4398DY-T1-E3 has a single-pulse avalanche energy rating (EAS) of 80 mJ, tested per JEDEC JESD22-A116 with L = 0.1 mH and IAS = 40 A. It is 100% UIS (unclamped inductive switching) tested during production, ensuring each unit meets this specification. This validation provides confidence in the SI4398DY-T1-E3's ability to withstand transient inductive spikes in DC/DC converters without failure.
How does the SO-8 package of SI4398DY-T1-E3 improve thermal performance compared to standard SO-8 MOSFETs?
The SI4398DY-T1-E3 uses an SO-8 package with an exposed drain paddle that connects directly to the internal die drain metallization, achieving RthJF = 13 °C/W (typ.). This allows heat to flow efficiently into the PCB copper, unlike standard SO-8 packages relying solely on leads for thermal conduction. As a result, the SI4398DY-T1-E3 delivers significantly lower junction temperature rise under load-critical for maintaining reliability in compact, high-power-density designs.
SI4398DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5620 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4398DY-T1-E3 FAQ
1.How can I place an order for SI4398DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4398DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4398DY-T1-E3 reliable?
The price and inventory of SI4398DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4398DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4398DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4398DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4398DY-T1-E3?
SI4398DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4398DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4398DY-T1-E3?
For technical support, including SI4398DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4398DY-T1-E3 requirements.
6.How does Aetrix verify that SI4398DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4398DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4398DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4398DY-T1-E3?
All SI4398DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4398DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4398DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4398DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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