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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4401BDY-T1-E3

Name: SI4401BDY-T1-E3
Brand: Vishay Siliconix
SKU: SI4401BDY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4401BDY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4401BDY-T1-E3.pdf

Description:: MOSFET P-CH 40V 8.7A 8SO

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Product details

Overview

SI4401BDY-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET rated for -40 V drain-source voltage, 0.014 Ω R_DS(on) at -10 V gate drive, and -10.5 A continuous drain current at T_A = 25 °C, used in high-efficiency DC-DC converter synchronous rectification and load switching circuits.

For engineers reviewing the SI4401BDY-T1-E3 datasheet, SI4401BDY-T1-E3 pinout, SI4401BDY-T1-E3 application, or SI4401BDY-T1-E3 equivalent, key selection criteria include verified -40 V V_DS, low R_DS(on) at -4.5 V gate drive (0.021 Ω), SO-8 package thermal resistance (R_thJA = 70 °C/W), and guaranteed 100 % R_g testing per production lot.

Technical Context

This device operates as a logic-level-compatible P-channel power switch with a gate threshold voltage range of -1.0 V to -3.0 V, enabling direct interface with 3.3 V and 5 V controllers. Its trench-based silicon structure delivers low gate charge (Q_g = 40–55 nC) and fast switching (t_d(on) = 16–25 ns, t_f = 47–75 ns).

The integrated body diode supports bidirectional current flow in buck converters and reverse-polarity protection circuits, with V_SD = -0.74 to -1.1 V at I_S = -2.7 A and zero gate bias. Thermal design is supported by validated junction-to-foot resistance (R_thJF = 16–21 °C/W) for heatsink-coupled layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for negative-rail high-side switching
R_DS(on)	0.014 Ω @ V_GS = -10 V - Enables <150 mW conduction loss at 10.5 A
I_D (cont)	-10.5 A @ T_A = 25 °C - Supports high-current load switching on standard FR4 PCBs
Q_g	40–55 nC - Determines gate driver power requirement and switching speed trade-off
V_GS(th)	-1.0 to -3.0 V - Ensures reliable turn-on with 3.3 V microcontroller GPIO
R_thJA	70 °C/W (steady state) - Defines maximum power dissipation before thermal derating
V_SD	-0.74 to -1.1 V @ I_S = -2.7 A - Limits forward drop and self-heating in freewheeling paths

Pinout & Package

SI4401BDY-T1-E3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads for thermal enhancement. Dimensions conform to JEDEC MS-012: D = 4.80–5.00 mm, E = 3.80–4.00 mm, H = 5.80–6.20 mm, and lead pitch e = 1.27 mm BSC.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Common high-current output node; electrically and thermally connected to exposed pad
6	Gate (G)	Control input requiring <55 nC charge for full enhancement
Source (S)	Source (S)	Reference terminal for gate drive; tied to system ground or negative rail

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-frequency switching efficiency
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch switching variability
Halogen-free construction	Meets IEC 61249-2-21 definition for environmentally compliant PCB assembly
RoHS-compliant	Lead-free termination (Pb-free) and fully compliant with Directive 2002/95/EC
SO-8 thermal footprint	Enables use of standard reflow profiles and compatibility with automated optical inspection (AOI)

Applications

Reverse Polarity Protection	Synchronous Rectification
Use Scenario: Prevents damage from accidental battery or supply connection reversal in portable instrumentation and automotive accessories. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active series switch, controlled by system enable signal. Use Value: Achieves <150 mV forward drop at 10 A (vs. >600 mV for Schottky diodes), reducing heat generation and improving cold-cranking margin.	Use Scenario: Replaces freewheeling diode in non-isolated buck converters for telecom and industrial power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller's complementary output stage. Use Value: Reduces conduction losses by >60 % compared to 40 V Schottky diodes, increasing efficiency from 88 % to 93 % at 12 V input / 3.3 V output.
Hot-Swap Controller Interface	Load Switch for FPGA Core Rails
Use Scenario: Enables safe insertion and removal of hot-pluggable modules in server backplanes and modular test equipment. IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch controlled by dedicated hot-swap IC. Use Value: Supports soft-start via gate slew-rate control and withstands repetitive 50 A avalanche pulses (E_AS = 45 mJ) during short-circuit events.	Use Scenario: Powers and isolates core voltage domains of Xilinx and Intel FPGAs during configuration and sleep states. IC Role / Device Role / Timing Role: Controlled power rail switch with fast turn-off (<150 ns t_d(off)) to prevent brownout during state transitions. Use Value: Delivers stable -10.5 A delivery at 1.2 V with <0.021 Ω R_DS(on) at -4.5 V gate drive, minimizing IR drop and dynamic voltage sag.

Reverse Polarity Protection

Synchronous Rectification

Use Scenario: Prevents damage from accidental battery or supply connection reversal in portable instrumentation and automotive accessories.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active series switch, controlled by system enable signal.

Use Value: Achieves <150 mV forward drop at 10 A (vs. >600 mV for Schottky diodes), reducing heat generation and improving cold-cranking margin.

Use Scenario: Replaces freewheeling diode in non-isolated buck converters for telecom and industrial power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller's complementary output stage.

Use Value: Reduces conduction losses by >60 % compared to 40 V Schottky diodes, increasing efficiency from 88 % to 93 % at 12 V input / 3.3 V output.

Hot-Swap Controller Interface

Load Switch for FPGA Core Rails

Use Scenario: Enables safe insertion and removal of hot-pluggable modules in server backplanes and modular test equipment.

IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch controlled by dedicated hot-swap IC.

Use Value: Supports soft-start via gate slew-rate control and withstands repetitive 50 A avalanche pulses (E_AS = 45 mJ) during short-circuit events.

Use Scenario: Powers and isolates core voltage domains of Xilinx and Intel FPGAs during configuration and sleep states.

IC Role / Device Role / Timing Role: Controlled power rail switch with fast turn-off (<150 ns t_d(off)) to prevent brownout during state transitions.

Use Value: Delivers stable -10.5 A delivery at 1.2 V with <0.021 Ω R_DS(on) at -4.5 V gate drive, minimizing IR drop and dynamic voltage sag.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7410PBF	R_DS(on) = 0.022 Ω @ -4.5 V; Q_g = 32 nC; SO-8 package	Lower gate charge but higher on-resistance reduces conduction efficiency above 6 A	Preferred where gate drive strength is limited and peak current ≤6 A
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; SOT-23-6 package; lower thermal mass	Smaller footprint but 50 % higher R_DS(on) limits use to ≤3 A loads	Selected for space-constrained designs with sub-3 A current requirements

Compared with SI4401BDY-T1-E3, IRF7410PBF offers faster switching but sacrifices conduction efficiency above 6 A, while DMG2305UVT-7 trades thermal performance and current capacity for board area savings-making SI4401BDY-T1-E3 optimal for balanced 8–10 A power-switching applications in SO-8 layouts.

Availability

SI4401BDY-T1-E3 is available at Aetrix Electronics and suitable for reverse polarity protection, synchronous rectification, hot-swap control, and FPGA core rail switching requiring stable component supply and long-term industrial lifecycle support.

Supply support for SI4401BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si4401BDY product line targets high-efficiency, medium-current power switching applications where low R_DS(on), robust avalanche capability, and logic-level gate drive are essential for compact, thermally constrained designs.

FAQ

What is the maximum continuous drain current rating for SI4401BDY-T1-E3 at 70 °C ambient temperature?

The SI4401BDY-T1-E3 supports -8.3 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under natural convection conditions. The SI4401BDY-T1-E3 must be evaluated with actual PCB layout and airflow to confirm safe operation at this current level.

Does SI4401BDY-T1-E3 have an integrated body diode, and what is its forward voltage?

Yes, the SI4401BDY-T1-E3 includes a monolithic body diode with V_SD = -0.74 to -1.1 V at I_S = -2.7 A and V_GS = 0 V. This diode enables freewheeling current in buck converters and reverse-current blocking in protection circuits. The SI4401BDY-T1-E3 body diode exhibits trr = 35–55 ns, supporting operation up to several hundred kHz without significant switching loss penalties.

Is SI4401BDY-T1-E3 compatible with lead-free reflow soldering processes?

Yes, SI4401BDY-T1-E3 is explicitly marked "Lead (Pb)-free" and qualified for standard lead-free reflow profiles, including peak temperatures up to 260 °C per JEDEC J-STD-020. The device meets RoHS Directive 2002/95/EC and uses halogen-free materials per IEC 61249-2-21. SI4401BDY-T1-E3 has been validated for compatibility with no-clean and water-soluble flux chemistries.

What is the gate threshold voltage range for SI4401BDY-T1-E3, and how does it affect logic-level drive?

The SI4401BDY-T1-E3 has a gate threshold voltage range of -1.0 V to -3.0 V at I_D = -250 µA, ensuring full enhancement with 3.3 V or 5 V logic outputs. This allows direct interface with microcontrollers and PWM controllers without level-shifting circuitry. The SI4401BDY-T1-E3 remains fully enhanced down to -4.5 V gate drive, delivering R_DS(on) = 0.021 Ω under typical low-voltage control conditions.

Can SI4401BDY-T1-E3 be used in avalanche-rated applications, and what is its single-pulse energy rating?

Yes, the SI4401BDY-T1-E3 is rated for avalanche operation with I_AS = 30 A and E_AS = 45 mJ (L = 1 mH) under single-pulse conditions. This capability supports robustness in inductive load switching and fault-tolerant power architectures. The SI4401BDY-T1-E3 avalanche performance is production-tested and documented in the Absolute Maximum Ratings section of Vishay document 73140.

SI4401BDY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4401BDY-T1-E3 FAQ

1.How can I place an order for SI4401BDY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4401BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4401BDY-T1-E3 reliable?

The price and inventory of SI4401BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4401BDY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4401BDY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4401BDY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4401BDY-T1-E3?

SI4401BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4401BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4401BDY-T1-E3?

For technical support, including SI4401BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4401BDY-T1-E3 requirements.

6.How does Aetrix verify that SI4401BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4401BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4401BDY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4401BDY-T1-E3?

All SI4401BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4401BDY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4401BDY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4401BDY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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