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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4403BDY-T1-E3

Name: SI4403BDY-T1-E3
Brand: Vishay Siliconix
SKU: SI4403BDY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4403BDY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4403BDY-T1-E3.pdf

Description:: MOSFET P-CH 20V 7.3A 8SO

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Product details

Overview

SI4403BDY-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -20 V drain-source voltage, 0.017 Ω R_DS(on) at V_GS = -4.5 V, and -9.9 A continuous drain current at T_A = 25 °C, designed for high-efficiency load switching in DC-DC converters and power management circuits.

For engineers reviewing the SI4403BDY-T1-E3 datasheet, SI4403BDY-T1-E3 pinout, SI4403BDY-T1-E3 application, or SI4403BDY-T1-E3 equivalent, key selection criteria include verified low R_DS(on) at 1.8 V gate drive, SO-8 thermal performance (R_thJA = 71 °C/W steady-state), and compliance with RoHS and halogen-free standards per IEC 61249-2-21.

Technical Context

This P-channel MOSFET operates with a gate threshold voltage of -0.45 V to -1.0 V and supports logic-level drive down to V_GS = -1.8 V, enabling direct interface with 1.8 V/2.5 V microcontrollers. Its trench-based silicon structure delivers low gate charge (Q_g = 33–50 nC) and fast switching (t_d(on) = 25–40 ns, t_f = 70–110 ns).

The device integrates an intrinsic body diode with V_SD = -0.8 to -1.1 V at I_S = -2.3 A and exhibits stable R_DS(on) over junction temperature (-55 to 150 °C), supported by normalized thermal transient impedance data for SO-8 mounting on FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - maximum blocking voltage for low-voltage P-channel switching
R_DS(on) @ V_GS = -4.5 V	0.017 Ω - enables <17 mW conduction loss at 9.9 A
I_D (continuous, T_A = 25 °C)	-9.9 A - usable in compact SO-8 power stages without forced air
Q_g	33–50 nC - determines gate driver strength requirement for <100 ns switching
V_GS(th)	-0.45 to -1.0 V - ensures turn-on with standard 1.8 V logic outputs
R_thJA (steady-state)	71 °C/W - defines thermal rise under 1.35 W dissipation on 1" × 1" FR4

Pinout & Package

SO-8 surface-mount package with exposed drain pad for thermal enhancement; lead (Pb)-free and halogen-free construction per ordering code.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally connected to exposed pad - primary current path and thermal sink
6	Gate (G)	Control terminal; requires ≤±8 V drive; low input capacitance enables fast edge rates
Source (S)	Source (S)	Reference node for gate drive; tied to system ground or high-side return in buck controllers

Key Features

Feature	Design Value
TrenchFET® technology	Enables 0.017 Ω R_DS(on) at -4.5 V in SO-8, reducing conduction loss vs. planar alternatives
1.8-V logic-compatible gate	Guaranteed turn-on at V_GS = -1.8 V with R_DS(on) = 0.032 Ω, supporting ultra-low-voltage control
RoHS and halogen-free	Complies with Directive 2002/95/EC and IEC 61249-2-21, suitable for green electronics manufacturing
Low Q_gd/Q_g ratio	Q_gd = 7.6 nC of total Q_g = 33–50 nC - improves hard-switching efficiency and EMI behavior

Applications

Power Load Switch	Battery Protection Circuit
Use Scenario: High-side power switch controlling 3.3 V or 5 V rail to peripherals in portable instrumentation. IC Role / Device Role / Timing Role: P-channel MOSFET acting as active high-side switch with fast turn-off (<110 ns fall time) to prevent backfeed. Use Value: 0.017 Ω R_DS(on) limits voltage drop to <170 mV at 10 A, preserving rail accuracy and minimizing heat in space-constrained enclosures.	Use Scenario: Reverse-current blocking and over-discharge protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-threshold P-channel switch placed between battery cathode and load to interrupt discharge when cell voltage falls below cutoff. Use Value: -0.45 V V_GS(th) allows reliable turn-on using simple resistor-divider sensing, eliminating need for dedicated protection IC bias supply.
DC-DC Synchronous Rectifier	Hot-Swap Controller Backside FET
Use Scenario: Secondary-side synchronous rectification in isolated 12 V-to-3.3 V flyback converters. IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency at light loads. Use Value: Body diode forward voltage of -0.8 to -1.1 V and low Q_rr (40–60 ns trr) minimize reverse-recovery losses during dead-time transitions.	Use Scenario: Inrush current limiting and fault isolation in 5 V hot-swap modules for telecom line cards. IC Role / Device Role / Timing Role: High-side switch controlled by hot-swap controller to ramp up load voltage gradually and disconnect on overcurrent. Use Value: SO-8 package with exposed drain provides sufficient thermal margin for 1.35 W continuous dissipation during sustained 7.3 A operation at 70 °C ambient.

Power Load Switch

Battery Protection Circuit

Use Scenario: High-side power switch controlling 3.3 V or 5 V rail to peripherals in portable instrumentation.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as active high-side switch with fast turn-off (<110 ns fall time) to prevent backfeed.

Use Value: 0.017 Ω R_DS(on) limits voltage drop to <170 mV at 10 A, preserving rail accuracy and minimizing heat in space-constrained enclosures.

Use Scenario: Reverse-current blocking and over-discharge protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-threshold P-channel switch placed between battery cathode and load to interrupt discharge when cell voltage falls below cutoff.

Use Value: -0.45 V V_GS(th) allows reliable turn-on using simple resistor-divider sensing, eliminating need for dedicated protection IC bias supply.

DC-DC Synchronous Rectifier

Hot-Swap Controller Backside FET

Use Scenario: Secondary-side synchronous rectification in isolated 12 V-to-3.3 V flyback converters.

IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency at light loads.

Use Value: Body diode forward voltage of -0.8 to -1.1 V and low Q_rr (40–60 ns trr) minimize reverse-recovery losses during dead-time transitions.

Use Scenario: Inrush current limiting and fault isolation in 5 V hot-swap modules for telecom line cards.

IC Role / Device Role / Timing Role: High-side switch controlled by hot-swap controller to ramp up load voltage gradually and disconnect on overcurrent.

Use Value: SO-8 package with exposed drain provides sufficient thermal margin for 1.35 W continuous dissipation during sustained 7.3 A operation at 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PBF	R_DS(on) = 0.022 Ω @ -4.5 V; higher Q_g = 55 nC; TO-252 package	Larger footprint and higher thermal resistance (R_thJA ≈ 90 °C/W) limit high-density use	Prefer SI4403BDY-T1-E3 for SO-8 board area constraints and faster switching
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; smaller SOT-23-6 package; lower I_D = -4.2 A	Lower current rating and higher on-resistance restrict use to sub-3 A loads	Choose SI4403BDY-T1-E3 when >7 A continuous current and <20 mΩ R_DS(on) are required

Compared with IRF7425PBF and DMG2305UVT-7, SI4403BDY-T1-E3 offers the lowest R_DS(on) in SO-8, best thermal performance for its footprint, and verified 1.8 V gate compatibility-making it optimal for space- and efficiency-critical 5–12 V power rails.

Availability

SI4403BDY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, and hot-swap modules requiring stable component supply and full RoHS/halogen-free compliance.

Supply support for SI4403BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability validation across multiple qualified sites.

The Si4403BDY product line targets high-efficiency, low-voltage power management in portable and industrial systems, emphasizing logic-level drive capability, thermal robustness in compact packages, and environmental compliance.

FAQ

What is the maximum continuous drain current for SI4403BDY-T1-E3 at 70 °C ambient?

The SI4403BDY-T1-E3 supports -5.8 A continuous drain current at T_A = 70 °C with no heatsink, based on its 0.87 W maximum power dissipation rating and 92 °C/W worst-case junction-to-ambient thermal resistance. This value assumes standard SO-8 mounting on 1" × 1" FR4 board per Vishay's test conditions. Derating is required above 70 °C ambient.

Does SI4403BDY-T1-E3 support true 1.8 V gate drive?

Yes, SI4403BDY-T1-E3 is characterized for R_DS(on) = 0.032 Ω at V_GS = -1.8 V and I_D = -3.1 A, confirming functional turn-on with 1.8 V logic-level signals. Its gate threshold voltage range of -0.45 V to -1.0 V ensures reliable enhancement-mode operation even with process and temperature variation.

What is the safe operating area (SOA) limitation for SI4403BDY-T1-E3 at DC operation?

At DC operation and T_A = 25 °C, the SI4403BDY-T1-E3 SOA is limited by R_DS(on) (conduction) and maximum power dissipation (1.35 W). It supports up to -7.3 A at V_DS = 1 V, but derates linearly to -1.3 A at V_DS = 10 V. The SOA curve in the datasheet (page 4) confirms no secondary breakdown risk in linear mode.

Is SI4403BDY-T1-E3 pin-compatible with other SO-8 P-channel MOSFETs?

SI4403BDY-T1-E3 uses standard SO-8 pinout (pins 1–5 and 7–8 = Drain, pin 6 = Gate, Source = internal connection to substrate/pad), matching industry-standard layout. However, pin compatibility does not guarantee electrical equivalence; always verify R_DS(on), Q_g, and thermal specs before substitution. No official pin-to-pin claim is made by Vishay for cross-manufacturer replacement.

What is the typical body diode reverse recovery time for SI4403BDY-T1-E3?

The SI4403BDY-T1-E3 body diode exhibits a typical reverse recovery time (t_rr) of 40–60 ns under I_F = -2.3 A and dI/dt = 100 A/µs conditions. This fast recovery supports efficient synchronous rectification and reduces switching loss in DC-DC topologies where the MOSFET body diode conducts during dead time.

SI4403BDY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 9.9A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.35W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4403BDY-T1-E3 FAQ

1.How can I place an order for SI4403BDY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4403BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4403BDY-T1-E3 reliable?

The price and inventory of SI4403BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4403BDY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4403BDY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4403BDY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4403BDY-T1-E3?

SI4403BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4403BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4403BDY-T1-E3?

For technical support, including SI4403BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4403BDY-T1-E3 requirements.

6.How does Aetrix verify that SI4403BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4403BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4403BDY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4403BDY-T1-E3?

All SI4403BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4403BDY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4403BDY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4403BDY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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