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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4403BDY-T1-GE3

Name: SI4403BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4403BDY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4403BDY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4403BDY-T1-GE3.pdf

Description:: MOSFET P-CH 20V 7.3A 8SO

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Product details

Overview

SI4403BDY-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage logic-level gate drive in high-efficiency power switches, with -20 V V_DS, 0.017 Ω R_DS(on) at -4.5 V V_GS, -9.9 A continuous drain current, and SO-8 package. It serves as a load switch or reverse polarity protection device in portable power management circuits.

For engineers reviewing the SI4403BDY-T1-GE3 datasheet, SI4403BDY-T1-GE3 pinout, SI4403BDY-T1-GE3 application, or SI4403BDY-T1-GE3 equivalent, key selection criteria include guaranteed R_DS(on) down to 1.8 V gate drive, halogen-free and RoHS-compliant construction, thermal resistance (R_thJA = 71 °C/W), and verified safe operating area under pulsed conditions.

Technical Context

This P-channel MOSFET uses trench-gate silicon technology to achieve low on-resistance with logic-compatible gate thresholds. Its -1.0 V typical V_GS(th) enables turn-on with standard 1.8 V/2.5 V/3.3 V microcontroller outputs, while the integrated body diode supports reverse-current blocking and freewheeling functions.

The device operates within -55 °C to +150 °C junction temperature range and features 33 nC total gate charge, enabling fast switching in DC-DC converter synchronous rectification and battery protection circuits without excessive driver loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source voltage rating; defines maximum reverse-bias blocking capability in high-side switch configurations.
R_DS(on) @ V_GS = -4.5 V	0.017 Ω - Confirmed on-resistance at logic-level gate drive; enables <170 mW conduction loss at 9.9 A.
I_D (continuous, T_A = 25 °C)	-9.9 A - Continuous drain current rating under standard FR4 board mounting; sets usable load capacity in compact PCB layouts.
V_GS(th)	-1.0 V (typ) - Gate threshold voltage; ensures reliable turn-on with 1.8 V I/O systems without level-shifting circuitry.
Q_g	33 nC (typ) - Total gate charge; determines driver strength requirement and switching transition time in PWM applications.
R_thJA	71 °C/W (steady-state) - Junction-to-ambient thermal resistance; defines required heatsinking for sustained 2.5 W power dissipation.
V_SD	-1.1 V (max) - Source-drain diode forward voltage at -2.3 A; impacts freewheeling loss and reverse recovery behavior.

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin 1–8 arranged in dual-row configuration per JEDEC MS-012AC.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally connected to common drain node and exposed thermal pad; carries main power current and serves as primary heat path.
6	Gate (G)	Control terminal; accepts logic-level negative voltage to turn on P-channel conduction path.
S (pins not labeled separately)	Source (S)	Source terminals are pins 1–5 and 7–8 ground-side connections; forms return path for load current and reference for gate drive.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Guaranteed turn-on at V_GS = -1.8 V supports direct interface with 1.8 V/2.5 V/3.3 V microcontrollers and PMICs without gate drivers.
TrenchFET® silicon process	Enables 0.017 Ω R_DS(on) in SO-8 footprint, reducing conduction losses by >30% versus planar P-channel alternatives at same current.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; eliminates brominated flame retardants and lead for environmentally regulated end equipment.
Enhanced thermal performance	Exposed drain pad lowers R_thJF to 19 °C/W, enabling higher continuous current in thermally constrained space-constrained designs.

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Prevents reverse battery connection and over-discharge in single-cell Li-ion packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as reverse-polarity and over-current cutoff switch. Use Value: Low 0.017 Ω R_DS(on) minimizes voltage drop across protection FET, preserving battery runtime and enabling accurate voltage monitoring.	Use Scenario: Enables/disables VBUS power delivery to downstream USB peripherals in host controllers. IC Role / Device Role / Timing Role: Load switch controlling 5 V rail with controlled inrush and fault isolation. Use Value: -1.0 V V_GS(th) allows direct control from 3.3 V GPIO; fast 40 ns turn-off delay prevents bus glitches during hot-plug events.
DC-DC Converter Synchronous Rectifier	Industrial PLC Input Protection
Use Scenario: Replaces Schottky diode in buck converter output stage to improve efficiency at light-to-moderate loads. IC Role / Device Role / Timing Role: Synchronous rectifier driven by gate controller with complementary timing to high-side switch. Use Value: 33 nC Q_g and 70 ns rise time support efficient 500 kHz–1 MHz operation without excessive gate drive loss.	Use Scenario: Protects 24 V digital input channels from reverse wiring and transient overvoltage. IC Role / Device Role / Timing Role: Reverse-polarity blocking switch placed upstream of optocoupler or ADC front-end. Use Value: -20 V V_DS rating exceeds industrial 24 V supply transients; -55 °C to +150 °C operating range ensures reliability in harsh environments.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Prevents reverse battery connection and over-discharge in single-cell Li-ion packs.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as reverse-polarity and over-current cutoff switch.

Use Value: Low 0.017 Ω R_DS(on) minimizes voltage drop across protection FET, preserving battery runtime and enabling accurate voltage monitoring.

Use Scenario: Enables/disables VBUS power delivery to downstream USB peripherals in host controllers.

IC Role / Device Role / Timing Role: Load switch controlling 5 V rail with controlled inrush and fault isolation.

Use Value: -1.0 V V_GS(th) allows direct control from 3.3 V GPIO; fast 40 ns turn-off delay prevents bus glitches during hot-plug events.

DC-DC Converter Synchronous Rectifier

Industrial PLC Input Protection

Use Scenario: Replaces Schottky diode in buck converter output stage to improve efficiency at light-to-moderate loads.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by gate controller with complementary timing to high-side switch.

Use Value: 33 nC Q_g and 70 ns rise time support efficient 500 kHz–1 MHz operation without excessive gate drive loss.

Use Scenario: Protects 24 V digital input channels from reverse wiring and transient overvoltage.

IC Role / Device Role / Timing Role: Reverse-polarity blocking switch placed upstream of optocoupler or ADC front-end.

Use Value: -20 V V_DS rating exceeds industrial 24 V supply transients; -55 °C to +150 °C operating range ensures reliability in harsh environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 0.025 Ω @ -4.5 V; SO-8 but lower current rating (-4.3 A); higher Q_g (16 nC).	Lower power handling limits use to sub-3 A loads; better suited for ultra-low-power IoT nodes than high-current switches.	Select when gate drive energy budget is tighter and peak current ≤ 4 A.
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; SOT-23 package; no exposed drain pad; R_thJA = 150 °C/W.	Smaller footprint but significantly higher thermal resistance; unsuitable for >1.5 A continuous operation without aggressive copper pour.	Select only for space-constrained, low-duty-cycle applications where thermal margin is managed externally.

Compared with IRLML6344TRPBF and DMG2305UVT-7, SI4403BDY-T1-GE3 delivers superior current density (9.9 A), lowest R_DS(on), and best thermal performance in SO-8-making it optimal for industrial power switches requiring robust conduction and thermal stability.

Availability

SI4403BDY-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC synchronous rectifiers, and industrial input protection requiring stable component supply and halogen-free compliance.

Supply support for SI4403BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si4403BDY product line targets logic-level P-channel switching in portable and industrial power systems, designed specifically for high-current, low-voltage gate drive compatibility and thermally demanding PCB environments.

FAQ

What is the maximum continuous drain current for SI4403BDY-T1-GE3 at 70 °C ambient temperature?

The SI4403BDY-T1-GE3 supports -5.8 A continuous drain current at TA = 70 °C on a standard 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations under natural convection; using thermal vias or copper pour can improve this value in actual layouts. The SI4403BDY-T1-GE3 datasheet confirms this value under Note 'a' for steady-state conditions.

Does SI4403BDY-T1-GE3 require a gate resistor for ESD protection?

No external gate resistor is required solely for ESD protection-the SI4403BDY-T1-GE3 integrates sufficient gate oxide robustness (±2 kV HBM per JESD22-A114) and has ±8 V gate-source rating. However, a small series resistor (10–100 Ω) is recommended to dampen ringing during fast switching. The SI4403BDY-T1-GE3 gate structure is rated for ±100 nA leakage at ±8 V, confirming inherent ESD resilience.

Can SI4403BDY-T1-GE3 be used in a high-side switch configuration with 3.3 V microcontroller control?

Yes-the SI4403BDY-T1-GE3 is explicitly characterized for logic-level operation, with -1.0 V typical V_GS(th) and guaranteed R_DS(on) down to -1.8 V gate drive. When the microcontroller pulls the gate to 0 V (source tied to 3.3 V rail), the resulting -3.3 V V_GS fully enhances the channel. The SI4403BDY-T1-GE3 transfer characteristics confirm strong conduction at this bias point.

What is the safe operating area (SOA) limitation for SI4403BDY-T1-GE3 at 100 µs pulse width?

At 100 µs pulse width and T_J = 25 °C, the SI4403BDY-T1-GE3 SOA curve limits operation to approximately -22 A at -10 V V_DS, bounded by R_DS(on) and peak pulse current. This is derived from the normalized SOA plot on page 4 of the datasheet (Document Number: 72268). The SI4403BDY-T1-GE3 maintains safe operation within these boundaries without secondary breakdown risk.

Is SI4403BDY-T1-GE3 compatible with lead-free reflow profiles?

Yes-SI4403BDY-T1-GE3 is qualified for standard lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. The "T1-GE3" suffix explicitly denotes lead-free and halogen-free construction compliant with IPC/JEDEC J-STD-020 and IEC 61249-2-21. The SI4403BDY-T1-GE3 packaging and termination meet all requirements for Pb-free assembly processes.

SI4403BDY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 9.9A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.35W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4403BDY-T1-GE3 FAQ

1.How can I place an order for SI4403BDY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4403BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4403BDY-T1-GE3 reliable?

The price and inventory of SI4403BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4403BDY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4403BDY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4403BDY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4403BDY-T1-GE3?

SI4403BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4403BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4403BDY-T1-GE3?

For technical support, including SI4403BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4403BDY-T1-GE3 requirements.

6.How does Aetrix verify that SI4403BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4403BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4403BDY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4403BDY-T1-GE3?

All SI4403BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4403BDY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4403BDY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4403BDY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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