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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4413ADY-T1-E3

Name: SI4413ADY-T1-E3
Brand: Vishay Siliconix
SKU: SI4413ADY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4413ADY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4413ADY-T1-E3.pdf

Description:: MOSFET P-CH 30V 10.5A 8SO

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Product details

Overview

SI4413ADY-T1-E3 from Vishay Siliconix is a P-channel 30-V TrenchFET® MOSFET in SO-8 package, rated for -15 A continuous drain current at 25 °C, with R_DS(on) = 7.5 mΩ at V_GS = -10 V and 11 mΩ at V_GS = -4.5 V, used as a load or battery switch in notebook power management.

For engineers reviewing the SI4413ADY-T1-E3 datasheet, SI4413ADY-T1-E3 pinout, SI4413ADY-T1-E3 application, or SI4413ADY-T1-E3 equivalent, key selection criteria include its -30 V V_DS, low gate threshold (-1.0 to -3.0 V), integrated body diode, thermal resistance (R_thJA = 70 °C/W), and Pb-free RoHS-compliant packaging.

Technical Context

This P-channel MOSFET operates in enhancement mode with a negative gate threshold voltage, enabling high-side switching without level-shifting circuitry. Its trench-based silicon structure delivers low on-resistance and fast switching dynamics, supported by Q_g = 61–95 nC and t_d(off) = 170–260 ns.

The device integrates a source-drain body diode with V_SD = -0.74 to -1.1 V at I_S = -2.7 A, and exhibits stable R_DS(on) over junction temperature (up to 150 °C), making it suitable for thermally constrained portable applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for high-side battery disconnect
R_DS(on) @ V_GS = -10 V	7.5 mΩ - Enables <150 mW conduction loss at 13 A, critical for efficiency in notebook load switches
R_DS(on) @ V_GS = -4.5 V	11 mΩ - Supports logic-level gate drive from 3.3 V/5 V controllers without external level shifters
I_D (continuous, T_A = 25 °C)	-15 A - Sustains full system load current in compact SO-8 footprint with adequate PCB copper
V_GS(th)	-1.0 to -3.0 V - Ensures reliable turn-on with standard microcontroller GPIOs and avoids false triggering
Q_g	61–95 nC - Determines gate driver strength requirement and switching loss trade-off in PWM operation
R_thJA	70 °C/W - Defines thermal derating curve; requires ≥1"×1" FR4 copper for full 15 A rating

Pinout & Package

SO-8 (narrow-body, MS-012 compliant) surface-mount package with exposed drain pad for thermal performance. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pins)	Drain (parallel-connected)	All eight pins except Gate and Source are internally tied to Drain - provides low-inductance, high-current path and thermal conduction to PCB
1 (Gate)	Control input	Accepts negative gate voltage relative to source; requires no level shifter for 3.3 V/5 V logic control of high-side switch
8 (Source)	Reference node	Connected to system ground or battery positive rail depending on high-side vs. low-side configuration; defines V_GS reference

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × area ratio in SO-8, reducing board space and conduction losses in portable systems
Halogen-free construction	Complies with IEC 61249-2-21, supporting environmental compliance without sacrificing thermal or electrical performance
Integrated body diode	Enables bidirectional current handling in battery protection circuits and supports reverse-current blocking during hot-swap events
Pb-free (RoHS-compliant)	Meets global regulatory requirements for lead-free assembly; compatible with standard SnAgCu reflow profiles

Applications

Notebook Load Switch	Notebook Battery Switch
Use Scenario: Powering peripheral subsystems (e.g., USB ports, card readers) only when the system is awake. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V/5 V rails with fast enable/disable response. Use Value: Reduces standby power leakage via low I_DSS (<1 µA at -30 V) and enables clean power sequencing without voltage droop.	Use Scenario: Isolating main Li-ion battery from system during charging, shutdown, or fault conditions. IC Role / Device Role / Timing Role: Bidirectional high-side disconnect switch with integrated body diode for charge path control. Use Value: Prevents reverse current flow during charger insertion and supports safe battery hot-swap with <11 mΩ R_DS(on) at logic-level drive.
Industrial Portable Instrument	POS Terminal Power Management
Use Scenario: Managing power to display backlight, sensors, and wireless modules in handheld test equipment. IC Role / Device Role / Timing Role: Low-loss, thermally robust power switch operating across -40 to +85 °C ambient. Use Value: Maintains <15 mΩ R_DS(on) up to 125 °C junction, minimizing thermal runaway risk in sealed enclosures.	Use Scenario: Enabling/disabling 12 V auxiliary rails for receipt printers and magnetic stripe readers in retail terminals. IC Role / Device Role / Timing Role: High-reliability, high-current (≥10 A) power switch with fast turn-off (t_f = 97–150 ns) for fault isolation. Use Value: Limits fault energy during short-circuit events via controlled fall time and low R_DS(on)-based current limiting.

Notebook Load Switch

Notebook Battery Switch

Use Scenario: Powering peripheral subsystems (e.g., USB ports, card readers) only when the system is awake.

IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V/5 V rails with fast enable/disable response.

Use Value: Reduces standby power leakage via low I_DSS (<1 µA at -30 V) and enables clean power sequencing without voltage droop.

Use Scenario: Isolating main Li-ion battery from system during charging, shutdown, or fault conditions.

IC Role / Device Role / Timing Role: Bidirectional high-side disconnect switch with integrated body diode for charge path control.

Use Value: Prevents reverse current flow during charger insertion and supports safe battery hot-swap with <11 mΩ R_DS(on) at logic-level drive.

Industrial Portable Instrument

POS Terminal Power Management

Use Scenario: Managing power to display backlight, sensors, and wireless modules in handheld test equipment.

IC Role / Device Role / Timing Role: Low-loss, thermally robust power switch operating across -40 to +85 °C ambient.

Use Value: Maintains <15 mΩ R_DS(on) up to 125 °C junction, minimizing thermal runaway risk in sealed enclosures.

Use Scenario: Enabling/disabling 12 V auxiliary rails for receipt printers and magnetic stripe readers in retail terminals.

IC Role / Device Role / Timing Role: High-reliability, high-current (≥10 A) power switch with fast turn-off (t_f = 97–150 ns) for fault isolation.

Use Value: Limits fault energy during short-circuit events via controlled fall time and low R_DS(on)-based current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PBF	R_DS(on) = 12 mΩ @ -10 V; higher Q_g (100 nC); TO-252 package	Larger footprint and lower power density; less suitable for space-constrained notebooks	Prefer SI4413ADY-T1-E3 for SO-8 layout compatibility and lower gate charge in high-frequency switching
DMG3415L-7	R_DS(on) = 15 mΩ @ -4.5 V; smaller SO-8 variant with reduced thermal mass	Lower current rating (I_D = -8 A); limited to sub-10 A loads	Choose SI4413ADY-T1-E3 when >10 A continuous current and robust thermal performance are required

Compared with IRF7425PBF and DMG3415L-7, the SI4413ADY-T1-E3 offers superior R_DS(on)/package density, lower gate charge for faster switching, and proven thermal reliability in notebook battery-switch applications - making it optimal where board area, efficiency, and thermal margin are critical.

Availability

SI4413ADY-T1-E3 is available at Aetrix Electronics and suitable for notebook load switching, battery isolation, industrial portable instrumentation, and POS terminal power management requiring stable component supply and long-term manufacturability.

Supply support for SI4413ADY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance MOSFETs, diodes, and power ICs for demanding industrial and computing applications.

The Si4413ADY product line targets high-efficiency, space-constrained power switching in portable computing and battery-powered systems, emphasizing low R_DS(on), logic-level drive, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current for SI4413ADY-T1-E3 at 70 °C ambient?

The SI4413ADY-T1-E3 supports -8.3 A continuous drain current at T_A = 70 °C with proper PCB copper area (1" × 1" FR4). This derating reflects its R_thJA = 70 °C/W and 150 °C maximum junction temperature, ensuring safe operation under sustained thermal load without exceeding TJ limits.

Does SI4413ADY-T1-E3 require a gate driver for 3.3 V microcontroller control?

No - the SI4413ADY-T1-E3 has a gate threshold voltage range of -1.0 to -3.0 V and achieves R_DS(on) = 11 mΩ at V_GS = -4.5 V, allowing direct interface with 3.3 V or 5 V GPIOs. No external level shifter or gate driver is needed for typical notebook load-switch use cases.

What is the safe operating area (SOA) limitation for SI4413ADY-T1-E3 in single-pulse conditions?

The SI4413ADY-T1-E3 SOA curve shows it can sustain 100 V × 1 A for 10 ms, or 30 V × 10 A for 100 µs, under single-pulse conditions. These boundaries are defined by both R_DS(on) heating and peak junction temperature limits, and must be validated against actual transient load profiles.

Is SI4413ADY-T1-E3 suitable for reverse battery protection?

Yes - the SI4413ADY-T1-E3's P-channel topology and integrated body diode allow implementation of reverse-polarity protection in high-side configurations. When placed between battery and system, it blocks reverse current while enabling forward conduction with minimal voltage drop (V_SD ≈ -0.9 V).

What is the total gate charge (Q_g) specification for SI4413ADY-T1-E3 and how does it affect switching loss?

The SI4413ADY-T1-E3 has Q_g = 61–95 nC (typ./max.) at V_DS = -15 V and V_GS = -5 V. This value directly determines gate driver power and switching transition time; lower Q_g reduces drive-stage losses and enables higher PWM frequencies without excessive gate dissipation in the SI4413ADY-T1-E3.

SI4413ADY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4413ADY-T1-E3 FAQ

1.How can I place an order for SI4413ADY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4413ADY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4413ADY-T1-E3 reliable?

The price and inventory of SI4413ADY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4413ADY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4413ADY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4413ADY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4413ADY-T1-E3?

SI4413ADY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4413ADY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4413ADY-T1-E3?

For technical support, including SI4413ADY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4413ADY-T1-E3 requirements.

6.How does Aetrix verify that SI4413ADY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4413ADY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4413ADY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4413ADY-T1-E3?

All SI4413ADY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4413ADY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4413ADY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4413ADY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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