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Vishay Siliconix SI4413ADY-T1-GE3
- Part No.:
- SI4413ADY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4413ADY-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 10.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,516
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Product details
Overview
SI4413ADY-T1-GE3 from Vishay Siliconix is a P-channel 30-V TrenchFET® MOSFET in SO-8 package, rated for -15 A continuous drain current at 25 °C, with RDS(on) = 7.5 mΩ at VGS = -10 V and 11 mΩ at VGS = -4.5 V, used as a load or battery switch in notebook power management.
For engineers reviewing the SI4413ADY-T1-GE3 datasheet, SI4413ADY-T1-GE3 pinout, SI4413ADY-T1-GE3 application, or SI4413ADY-T1-GE3 equivalent, key selection factors include its halogen-free and lead-free compliance, low gate charge (61–95 nC), junction-to-foot thermal resistance (16–21 °C/W), and guaranteed -30 V VDS rating under pulsed conditions.
Technical Context
This P-channel MOSFET uses trench-based silicon architecture to achieve low on-resistance and fast switching. Its gate threshold voltage range (-1.0 V to -3.0 V) enables reliable turn-on with standard logic-level gate drive down to -4.5 V, supporting direct interface with microcontroller GPIOs in high-side switch configurations.
The device integrates an intrinsic body diode with VSD = -0.74 V to -1.1 V at -2.7 A, and exhibits dynamic parameters including 32 nC Qgd, 21–35 ns td(on), and 170–260 ns td(off), optimized for efficient DC load switching rather than high-frequency PWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for high-side battery or load disconnect applications |
| RDS(on) @ VGS = -10 V | 7.5 mΩ - Enables <150 mW conduction loss at 13 A, suitable for thermally constrained notebook PCBs |
| RDS(on) @ VGS = -4.5 V | 11 mΩ - Ensures functional switching with 4.5 V logic rails without external level shifting |
| ID (continuous, TA = 25 °C) | -15 A - Supports high-current peripheral or subsystem power gating |
| Qg | 61–95 nC - Low total gate charge reduces driver power and speeds up turn-on/turn-off transitions |
| TJ range | -55 to +150 °C - Qualified for operation across industrial and portable computing ambient environments |
| RthJF | 16–21 °C/W - Junction-to-foot thermal path supports direct copper pour heatsinking through exposed drain pads |
Pinout & Package
SO-8 narrow-body surface-mount package (JEDEC MS-012), with exposed drain pad for thermal and electrical connection. Pin 1–8 arranged in dual-row configuration; pins 1, 2, 3, 4 are source terminals; pins 5, 6, 7, 8 are drain terminals; pin 3 is gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source node; multiple pins reduce resistance and improve current sharing in high-current paths |
| 5, 6, 7, 8 | Drain | High-current output terminal; tied internally to exposed metal pad for thermal dissipation |
| 3 | Gate | Control input; requires no external pull-down resistor due to negative VGS(th) and low IGSS (±100 nA) |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × area efficiency for compact high-current switching in space-constrained notebooks |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU without compromising thermal or electrical performance |
| Low Qgd/Qg ratio | 32 nC / 61–95 nC ≈ 0.34 - Reduces Miller-induced switching instability during high dv/dt load transients |
| Enhanced body diode ruggedness | trr = 70–110 ns with 100 A/µs dI/dt - Supports safe reverse recovery in synchronous buck or OR-ing configurations |
Applications
| Notebook Load Switch | Notebook Battery Protection |
|---|---|
Use Scenario: Powering/disabling USB-C PD ports or discrete GPU modules based on system policy. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as controlled power rail switch with fast enable/disable response. Use Value: 7.5 mΩ RDS(on) limits voltage drop to <100 mV at 13 A, preserving bus regulation while enabling hot-plug safety. | Use Scenario: Isolating main Li-ion battery pack from system during overvoltage, deep discharge, or thermal fault events. IC Role / Device Role / Timing Role: Bidirectional isolation switch placed between battery and system power domain. Use Value: -30 V VDS rating exceeds typical 3S Li-ion stack voltage (12.6 V), providing 2.4× safety margin against surge transients. |
| Industrial Tablet Power Sequencing | Embedded Controller Peripheral Gating |
Use Scenario: Controlled power-up of display backlight, camera module, or cellular modem in ruggedized tablets. IC Role / Device Role / Timing Role: Standalone load switch managed by baseband processor GPIO with minimal external components. Use Value: Guaranteed turn-on at -4.5 V VGS eliminates need for charge pump or level shifter, reducing BOM count and layout area. | Use Scenario: Dynamic power gating of non-critical peripherals (e.g., SD card, UART debug port) to meet ACPI S3/S4 sleep states. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ -1 µA at 25 °C) power switch enabling deep-sleep current budgets below 50 µA. Use Value: -1 µA IDSS ensures negligible standby drain over weeks, critical for battery-backed embedded controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PbF | RDS(on) = 12 mΩ @ -4.5 V; higher Qg (105 nC); SO-8 but non-halogen-free | Lacks halogen-free certification; slightly higher conduction loss at logic-level drive | Acceptable where environmental compliance is secondary to cost; verify thermal margin with RthJA = 84 °C/W |
| DMG2305UVT-7 | RDS(on) = 45 mΩ @ -4.5 V; smaller SOT-26 package; lower ID rating (-4.2 A) | Not suitable for >5 A loads; limited thermal mass for sustained current | Only for ultra-low-power subsystems; insufficient for notebook main rail switching |
Compared with IRF7425PbF and DMG2305UVT-7, SI4413ADY-T1-GE3 provides superior thermal performance via SO-8 exposed drain, tighter RDS(on) tolerance at -4.5 V, and full halogen-free compliance-making it optimal for high-reliability, thermally dense notebook power architectures.
Availability
SI4413ADY-T1-GE3 is available at Aetrix Electronics and suitable for notebook load switching, battery protection circuits, and industrial tablet power sequencing requiring stable component supply and long-term lifecycle support.
Supply support for SI4413ADY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power management solutions with emphasis on reliability and thermal performance.
The Si4413ADY product line delivers high-current P-channel MOSFETs optimized for high-side load switching in portable computing and industrial control systems where low RDS(on), logic-level drive, and environmental compliance are mandatory.
FAQ
What is the maximum continuous drain current rating for SI4413ADY-T1-GE3 at 70 °C ambient temperature?
The SI4413ADY-T1-GE3 supports -8.3 A continuous drain current at TA = 70 °C when mounted on a standard 1" × 1" FR4 board. This derating reflects its thermal resistance profile (RthJA = 70–84 °C/W steady state) and ensures safe operation without exceeding the 150 °C maximum junction temperature. The SI4413ADY-T1-GE3 datasheet specifies this value under defined PCB layout conditions.
Does SI4413ADY-T1-GE3 require a gate driver IC for operation with a 3.3 V microcontroller?
No, SI4413ADY-T1-GE3 does not require an external gate driver when driven by a 3.3 V microcontroller, because its gate threshold voltage range (-1.0 V to -3.0 V) and specified RDS(on) = 11 mΩ at VGS = -4.5 V ensure functional turn-on even with inverted 3.3 V logic (i.e., 0 V gate = -3.3 V VGS). The SI4413ADY-T1-GE3 maintains usable conduction down to -3 V VGS, per transfer characteristic curves.
How is the exposed drain pad on SI4413ADY-T1-GE3 intended to be used in PCB layout?
The exposed drain pad on SI4413ADY-T1-GE3 must be soldered to a large copper pour connected to the system ground or power return plane to maximize thermal dissipation and current handling. Vishay recommends minimum pad dimensions of 4.369 mm × 6.248 mm (0.172" × 0.246") per Application Note 826. Proper thermal vias beneath the pad significantly reduce RthJF and prevent localized heating in the SI4413ADY-T1-GE3.
Is SI4413ADY-T1-GE3 suitable for reverse polarity protection in a 24 V automotive accessory circuit?
No, SI4413ADY-T1-GE3 is not suitable for 24 V automotive reverse polarity protection because its -30 V VDS rating provides insufficient margin against load dump transients (which exceed -60 V). While the SI4413ADY-T1-GE3 functions reliably in 12 V nominal systems with proper clamping, automotive-grade designs require devices rated ≥ -40 V with AEC-Q101 qualification-neither of which applies to the SI4413ADY-T1-GE3.
What is the typical gate-to-source leakage current for SI4413ADY-T1-GE3 at maximum rated VGS?
The typical gate-to-source leakage current (IGSS) for SI4413ADY-T1-GE3 is ±100 nA at VGS = ±20 V and TJ = 25 °C, as specified in the "Static" section of the datasheet. This low leakage ensures minimal power loss in always-on control circuits and supports stable gate biasing without active refresh. The SI4413ADY-T1-GE3 maintains this specification across its full operating temperature range.
SI4413ADY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4413ADY-T1-GE3 FAQ
1.How can I place an order for SI4413ADY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4413ADY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4413ADY-T1-GE3 reliable?
The price and inventory of SI4413ADY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4413ADY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4413ADY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4413ADY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4413ADY-T1-GE3?
SI4413ADY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4413ADY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4413ADY-T1-GE3?
For technical support, including SI4413ADY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4413ADY-T1-GE3 requirements.
6.How does Aetrix verify that SI4413ADY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4413ADY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4413ADY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4413ADY-T1-GE3?
All SI4413ADY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4413ADY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4413ADY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4413ADY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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