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Vishay Siliconix SI4420BDY-T1-GE3
- Part No.:
- SI4420BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4420BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 9.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:1,757
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Product details
Overview
SI4420BDY-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 13.5 A continuous drain current at 25 °C, and 8.5 mΩ RDS(on) at VGS = 10 V. It operates in high-efficiency DC-DC converters, load switches, and motor control circuits where low conduction loss and fast switching are required.
For engineers reviewing the SI4420BDY-T1-GE3 datasheet, SI4420BDY-T1-GE3 pinout, SI4420BDY-T1-GE3 application, or SI4420BDY-T1-GE3 equivalent, key selection criteria include its SO-8 package thermal performance (RthJA = 70 °C/W steady-state), gate charge (Qg = 31–50 nC), avalanche energy rating (EAS = 20 mJ), and guaranteed 100% Rg testing.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance with stable threshold voltage (VGS(th) = 1.0–3.0 V) and robust gate oxide integrity. Its SO-8 package provides dual-sided thermal dissipation via exposed drain pad and standard PCB layout compatibility.
The device supports synchronous rectification and high-frequency PWM operation due to fast switching parameters: td(on) = 15–25 ns, tr = 11–18 ns, td(off) = 40–60 ns, and tf = 12–20 ns under defined test conditions. Its body diode exhibits VSD = 0.75–1.1 V at IS = 2.3 A and reverse recovery time trr = 30–50 ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for low-voltage power rails and battery-fed systems |
| RDS(on) @ 10 V | 0.007–0.0085 Ω - Enables ≤1.1 W conduction loss at 13.5 A, critical for thermally constrained layouts |
| ID (continuous) | 13.5 A @ TA = 25 °C - Supports medium-power switching loads without forced cooling |
| Qg | 31–50 nC - Determines gate driver power requirement and switching loss in high-frequency operation |
| EAS | 20 mJ - Specifies single-pulse avalanche ruggedness for inductive load commutation safety |
| RthJA | 70 °C/W (steady-state) - Defines maximum power dissipation limit of ~1.4 W on standard FR4 PCB |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drive |
Pinout & Package
SI4420BDY-T1-GE3 is housed in a standard SO-8 (narrow) surface-mount package per JEDEC MS-012, with exposed drain pad for enhanced thermal conduction to PCB copper. Pin 1 is gate (G), pins 2–4 and 6–8 are source (S), and pins 5 and 7 are drain (D).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires <1.5 Ω gate resistance to minimize ringing and ensure stable switching |
| 2, 3, 4, 6, 8 | Source (S) | Power return path; multiple pins reduce bond wire inductance and improve current sharing |
| 5, 7 | Drain (D) | Main power output; connected to exposed pad for thermal and electrical connection to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers lower RDS(on) per die area than planar MOSFETs, enabling compact high-current designs |
| 100% Rg tested | Ensures gate resistance falls within 0.5–1.5 Ω range, guaranteeing consistent switching timing across production lots |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS, supporting environmentally regulated industrial and automotive end equipment |
| SO-8 with exposed drain | Provides 23–28 °C/W junction-to-foot thermal resistance, allowing direct heat sinking to PCB copper layers |
Applications
| DC-DC Synchronous Buck Converter | Hot-Swap Load Switch |
|---|---|
|
Use Scenario: High-efficiency 5 V or 12 V input to 1–3.3 V output conversion in telecom and server power supplies. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: Achieves >92% efficiency at 10 A output by minimizing RDS(on)-based losses and leveraging fast body diode recovery (trr ≤ 50 ns). |
Use Scenario: Controlled inrush current management during board insertion into live backplane or hot-pluggable modules. IC Role / Device Role: Main pass element in active load switch circuit with external gate driver and current limiting. Use Value: Supports 13.5 A steady-state load with safe SOA margin and 20 mJ avalanche energy for transient overvoltage protection. |
| Motor Driver Half-Bridge | USB-C Power Delivery Switch |
|
Use Scenario: Low-voltage brushed DC motor control in portable medical devices and robotics. IC Role / Device Role: Low-side switch in H-bridge configuration driving up to 11 A peak motor current. Use Value: Enables PWM frequencies ≥100 kHz due to low Qg and fast switching times, reducing audible noise and improving torque resolution. |
Use Scenario: VBUS path control in USB-C PD 3.0 compliant chargers and adapters. IC Role / Device Role: Bidirectional power path switch managing 5–20 V, up to 3 A delivery with reverse current blocking. Use Value: Meets USB-C specification requirements for low RDS(on) (<10 mΩ) and fast fault response using integrated gate drive compatibility. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC010N03LS | RDS(on) = 1.0 mΩ @ 10 V (lower), but SO-8 package lacks exposed drain pad and has higher RthJA (85 °C/W) | Better conduction loss at high current, but reduced thermal headroom on standard PCBs | Prefer when board-level heatsinking is unavailable and ultra-low RDS(on) dominates thermal design |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 9.0 mΩ @ 10 V, same SO-8 footprint, but rated for 30 V and 12 A only; no specified EAS | Limited avalanche capability and lower current rating restrict use in inductive switching | Select when cost sensitivity outweighs need for ruggedness and full 13.5 A continuous rating |
Compared with BSC010N03LS and NTMFS4C09NT1G, the SI4420BDY-T1-GE3 offers balanced trade-offs: verified avalanche energy, exposed-drain thermal performance, and halogen-free compliance-making it suitable for industrial and long-lifecycle designs where reliability and regulatory alignment are prioritized over marginal RDS(on) reduction.
Availability
SI4420BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap load switches, and motor driver half-bridges requiring stable component supply, long-term manufacturability, and halogen-free compliance.
Supply support for SI4420BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.
The Si4420BDY product line delivers high-current, low-RDS(on) TrenchFET® MOSFETs in standard SO-8 packages for space-constrained power management applications demanding thermal robustness and process consistency.
FAQ
What is the maximum continuous drain current rating for SI4420BDY-T1-GE3 at 70 °C ambient temperature?
The SI4420BDY-T1-GE3 supports 7.5 A continuous drain current at TA = 70 °C under steady-state conditions, as specified in the Absolute Maximum Ratings table. This derating reflects its thermal resistance (RthJA = 70–90 °C/W) and power dissipation limit (PD = 0.9 W at 70 °C). Designers must verify PCB copper area and airflow to sustain this current reliably in actual SI4420BDY-T1-GE3 implementations.
Does SI4420BDY-T1-GE3 support logic-level gate drive?
Yes, the SI4420BDY-T1-GE3 has a gate threshold voltage (VGS(th)) ranging from 1.0 V to 3.0 V, enabling full enhancement with standard 3.3 V or 5 V logic outputs. At VGS = 4.5 V, it achieves RDS(on) = 0.009–0.011 Ω and ID = 11 A, confirming robust logic-level operation. This makes SI4420BDY-T1-GE3 suitable for microcontroller-driven switching without level-shifting circuitry.
Is SI4420BDY-T1-GE3 qualified for automotive applications?
The SI4420BDY-T1-GE3 is not AEC-Q101 qualified and is intended for industrial, computing, and consumer applications. While it operates across –55 °C to +150 °C junction temperature and meets halogen-free standards, Vishay does not list it in their automotive-grade product portfolio. For automotive use, designers should select explicitly AEC-Q101 qualified alternatives rather than relying on SI4420BDY-T1-GE3.
What is the significance of "100 % Rg tested" for SI4420BDY-T1-GE3?
"100 % Rg tested" means every SI4420BDY-T1-GE3 unit undergoes production screening to verify gate resistance falls within 0.5–1.5 Ω. This ensures predictable gate drive timing, minimizes risk of oscillation or shoot-through in bridge configurations, and improves batch-to-batch consistency-critical for high-volume SI4420BDY-T1-GE3 deployments in power supply and motor control systems.
Can SI4420BDY-T1-GE3 be used in bidirectional current applications?
The SI4420BDY-T1-GE3 incorporates an intrinsic body diode with VSD = 0.75–1.1 V and trr = 30–50 ns, enabling limited bidirectional conduction in synchronous rectification or USB-C power path designs. However, its asymmetrical SO-8 pinout (drain on pins 5/7, source on pins 2–4/6/8) and lack of specified reverse conduction ratings mean dedicated bidirectional switches or back-to-back configurations are preferred for sustained reverse current handling in SI4420BDY-T1-GE3-based systems.
SI4420BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4420BDY-T1-GE3 FAQ
1.How can I place an order for SI4420BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4420BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4420BDY-T1-GE3 reliable?
The price and inventory of SI4420BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4420BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4420BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4420BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4420BDY-T1-GE3?
SI4420BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4420BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4420BDY-T1-GE3?
For technical support, including SI4420BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4420BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4420BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4420BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4420BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4420BDY-T1-GE3?
All SI4420BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4420BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4420BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4420BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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