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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4423DY-T1-E3

Name: SI4423DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4423DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4423DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4423DY-T1-E3.pdf

Description:: MOSFET P-CH 20V 10A 8SO

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Product details

Overview

SI4423DY-T1-E3 from Vishay Siliconix is a P-channel 20-V TrenchFET® MOSFET optimized for load switching in portable electronics, delivering R_DS(on) = 7.5 mΩ at V_GS = −4.5 V, −14 A continuous drain current (T_J = 150 °C), and SO-8 surface-mount package compatibility.

For engineers reviewing the SI4423DY-T1-E3 datasheet, SI4423DY-T1-E3 pinout, SI4423DY-T1-E3 application, or SI4423DY-T1-E3 equivalent, key selection criteria include low-threshold gate drive capability (V_GS(th) = −0.4 to −0.9 V), integrated body diode performance (V_SD = −0.6 to −1.1 V), and thermal resistance (R_thJA = 70 °C/W steady-state) for compact power management designs.

Technical Context

This P-channel MOSFET operates as a high-side load switch with gate threshold enabling direct logic-level control from 1.8 V–4.5 V microcontrollers. Its trench-based structure ensures stable R_DS(on) across temperature (±20% variation from −55 °C to 150 °C) and low gate charge (Q_g = 116–175 nC) for efficient switching in battery-powered systems.

The device integrates a fast-recovery source-drain diode (t_rr = 105–160 ns) and supports pulsed drain currents up to −50 A, making it suitable for transient-heavy applications like USB port protection and hot-swap circuits where controlled turn-on/turn-off timing is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage for 3.3 V/5 V rail switching without derating
R_DS(on)	7.5 mΩ @ V_GS = −4.5 V, I_D = −14 A - Enables <100 mW conduction loss at 10 A load
I_D (continuous)	−14 A @ T_A = 25 °C - Supports high-current peripheral switching on FR4 PCBs
V_GS(th)	−0.4 to −0.9 V - Ensures reliable turn-on with 1.8 V GPIO or low-voltage supervisors
Q_g	116–175 nC - Determines gate driver strength requirement for <250 ns rise/fall times
R_thJA	70 °C/W (steady-state) - Requires ≤1.5 W dissipation for safe operation at 70 °C ambient
t_rr	105–160 ns - Limits reverse recovery energy in inductive load switching

Pinout & Package

SO-8 narrow-body package (JEDEC MS-012), surface-mount, lead (Pb)-free, RoHS-compliant. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally paralleled terminals - provides low-inductance, high-current path to load return
8	Gate (G)	Control input - requires <175 nC charge for full enhancement; sensitive to ESD (±8 V rating)
Source (S)	Source (S)	Common reference for gate drive and load return - tied to system ground or supply rail depending on high-side configuration

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 7.5 mΩ R_DS(on) in SO-8 footprint - eliminates need for larger packages or paralleling
Low V_GS(th) range	−0.4 to −0.9 V - allows direct interface with 1.8 V/2.5 V logic without level-shifting circuitry
Integrated body diode	V_SD = −0.6 to −1.1 V @ I_S = −2.7 A - supports bidirectional current flow in USB OTG or battery backup paths
Halogen-free construction	Complies with IEC 61249-2-21 - meets environmental requirements for consumer electronics and gaming hardware
Thermal performance	R_thJF = 16–21 °C/W (junction-to-foot) - enables direct thermal coupling to copper pour for enhanced power handling

Applications

USB Power Switching	Gaming Console Peripherals
Use Scenario: Controlled enable/disable of 5 V USB downstream ports with overcurrent protection. IC Role / Device Role / Timing Role: High-side load switch managing power delivery path between host controller and USB connector. Use Value: Low R_DS(on) minimizes voltage drop (<75 mV @ 10 A), preserving USB spec compliance; fast t_rr prevents latch-up during plug/unplug transients.	Use Scenario: Power sequencing for HDMI audio/video modules and controller add-ons in game stations. IC Role / Device Role / Timing Role: Load switch isolating auxiliary subsystems during standby or firmware update cycles. Use Value: −14 A rating supports burst-mode loads (e.g., LED backlight activation); SO-8 footprint fits dense PCB layouts typical in handheld consoles.
Portable Audio Amplifier Bias	Industrial Sensor Node Power Gating
Use Scenario: Enabling/disabling Class-D amplifier bias rails in Bluetooth speakers and headphones. IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ −1 µA) high-side switch controlling V_CC to amplifier ICs. Use Value: Ultra-low gate leakage (±100 nA) preserves battery life in always-on listening modes; −55 to 150 °C operating range covers extended ambient conditions.	Use Scenario: Power gating for LoRaWAN or BLE sensor nodes during deep-sleep intervals. IC Role / Device Role / Timing Role: Energy-efficient load switch disconnecting non-critical peripherals (e.g., ADC reference, RF front-end) to reduce quiescent current. Use Value: V_GS(th) stability over temperature ensures consistent turn-on behavior across −40 to 85 °C industrial environments; RoHS/halogen-free compliance supports global deployment.

USB Power Switching

Gaming Console Peripherals

Use Scenario: Controlled enable/disable of 5 V USB downstream ports with overcurrent protection.

IC Role / Device Role / Timing Role: High-side load switch managing power delivery path between host controller and USB connector.

Use Value: Low R_DS(on) minimizes voltage drop (<75 mV @ 10 A), preserving USB spec compliance; fast t_rr prevents latch-up during plug/unplug transients.

Use Scenario: Power sequencing for HDMI audio/video modules and controller add-ons in game stations.

IC Role / Device Role / Timing Role: Load switch isolating auxiliary subsystems during standby or firmware update cycles.

Use Value: −14 A rating supports burst-mode loads (e.g., LED backlight activation); SO-8 footprint fits dense PCB layouts typical in handheld consoles.

Portable Audio Amplifier Bias

Industrial Sensor Node Power Gating

Use Scenario: Enabling/disabling Class-D amplifier bias rails in Bluetooth speakers and headphones.

IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ −1 µA) high-side switch controlling V_CC to amplifier ICs.

Use Value: Ultra-low gate leakage (±100 nA) preserves battery life in always-on listening modes; −55 to 150 °C operating range covers extended ambient conditions.

Use Scenario: Power gating for LoRaWAN or BLE sensor nodes during deep-sleep intervals.

IC Role / Device Role / Timing Role: Energy-efficient load switch disconnecting non-critical peripherals (e.g., ADC reference, RF front-end) to reduce quiescent current.

Use Value: V_GS(th) stability over temperature ensures consistent turn-on behavior across −40 to 85 °C industrial environments; RoHS/halogen-free compliance supports global deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 12.5 mΩ @ −4.5 V; lower I_D (−4.3 A); SOT-23 package	Lower current capacity; suited for sub-5 A point-of-load switching only	Select when board space is constrained and load current ≤4 A; not suitable for USB 3.0 or gaming peripheral use cases.
DMN2023LSD-13	R_DS(on) = 8.5 mΩ @ −4.5 V; dual N/P-channel; SO-8 footprint	Includes complementary N-channel device - useful for half-bridge or bidirectional control topologies	Choose when designing synchronous rectification or H-bridge drivers; adds complexity if only single-switch functionality is needed.

Compared with SI4423DY-T1-E3, the IRLML6344TRPBF trades higher on-resistance and lower current for ultra-compact size, while the DMN2023LSD-13 offers dual-channel integration at slight cost premium - SI4423DY-T1-E3 remains optimal for standalone, high-current, low-threshold P-channel switching in SO-8 layouts.

Availability

SI4423DY-T1-E3 is available at Aetrix Electronics and suitable for USB power management, gaming console peripheral control, and portable audio amplifier biasing requiring stable component supply and long-term industrial availability.

Supply support for SI4423DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and consumer markets.

The Si4423DY belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered for low-voltage, high-efficiency load switching in space-constrained portable and gaming electronics.

FAQ

What is the maximum continuous drain current for SI4423DY-T1-E3 at 70 °C ambient?

The SI4423DY-T1-E3 supports −11.5 A continuous drain current at T_A = 70 °C with proper PCB copper area (1" × 1" FR4). This rating assumes no forced airflow and accounts for thermal derating per the datasheet's absolute maximum ratings table. The SI4423DY-T1-E3 maintains stable R_DS(on) across this range due to its trench-based silicon process.

Does SI4423DY-T1-E3 require a gate resistor for typical 3.3 V MCU switching?

Yes - a series gate resistor (typically 10–47 Ω) is recommended with SI4423DY-T1-E3 when driven by 3.3 V microcontrollers to limit peak gate current and damp ringing caused by Q_g = 116–175 nC and PCB trace inductance. The SI4423DY-T1-E3 gate threshold allows full enhancement, but uncontrolled edge rates may induce EMI or shoot-through in multi-MOSFET systems.

Can SI4423DY-T1-E3 be used in high-side switch configurations with 1.8 V logic?

Yes - SI4423DY-T1-E3 is specifically designed for 1.8 V logic compatibility, with V_GS(th) ranging from −0.4 V to −0.9 V. At V_GS = −1.8 V, it delivers R_DS(on) = 11.5 mΩ and supports −12 A, making the SI4423DY-T1-E3 viable for high-side switching in ultra-low-voltage portable systems without level shifters.

What is the safe operating area (SOA) limitation for SI4423DY-T1-E3 at DC operation?

At DC operation, the SI4423DY-T1-E3 SOA is limited by R_DS(on) and thermal resistance: maximum sustainable power is 1.5 W at T_A = 25 °C (PD = 1.5 W), dropping to 0.95 W at T_A = 70 °C. The SI4423DY-T1-E3 SOA curve confirms resistive-limited behavior below 10 V V_DS, meaning it can safely handle −14 A only when V_DS < 0.1 V in linear mode.

Is SI4423DY-T1-E3 halogen-free and RoHS-compliant?

Yes - SI4423DY-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as confirmed in the Vishay datasheet revision D (27-Apr-09) and ordering information. The "E3" suffix explicitly denotes lead (Pb)-free and halogen-free construction, making the SI4423DY-T1-E3 suitable for consumer electronics and gaming hardware with strict environmental requirements.

SI4423DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 14A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 600µA

Gate Charge (Qg) (Max) @ Vgs:: 175 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4423DY-T1-E3 FAQ

1.How can I place an order for SI4423DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4423DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4423DY-T1-E3 reliable?

The price and inventory of SI4423DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4423DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4423DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4423DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4423DY-T1-E3?

SI4423DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4423DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4423DY-T1-E3?

For technical support, including SI4423DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4423DY-T1-E3 requirements.

6.How does Aetrix verify that SI4423DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4423DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4423DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4423DY-T1-E3?

All SI4423DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4423DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4423DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4423DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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