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Vishay Siliconix SI4423DY-T1-GE3
- Part No.:
- SI4423DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4423DY-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,568
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Product details
Overview
SI4423DY-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -20 V drain-source voltage, with RDS(on) = 7.5 mΩ at VGS = -4.5 V and continuous drain current of -14 A at TA = 25 °C. It serves as a low-side load switch in compact DC power rails for portable electronics.
For engineers reviewing the SI4423DY-T1-GE3 datasheet, SI4423DY-T1-GE3 pinout, SI4423DY-T1-GE3 application, or SI4423DY-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant SO-8 package, gate threshold voltage range (-0.4 V to -0.9 V), and thermal resistance (RthJA = 70 °C/W steady-state).
Technical Context
This device operates as a logic-level P-channel enhancement-mode MOSFET optimized for high-efficiency, low-voltage switching in space-constrained applications. Its trench-based silicon structure delivers low on-resistance and fast switching with Qg = 116–175 nC and tf = 210–320 ns.
The SI4423DY-T1-GE3 integrates an intrinsic body diode with VSD = -0.6 to -1.1 V at IS = -2.7 A and exhibits stable RDS(on) over junction temperature (±15% variation from -55 °C to 125 °C), supporting reliable operation in thermally dynamic environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 3.3 V/5 V rail load switching |
| RDS(on) | 7.5 mΩ @ VGS = -4.5 V - Enables <100 mW conduction loss at 14 A |
| ID (continuous) | -14 A @ TA = 25 °C - Supports high-current USB-C PD or battery protection paths |
| VGS(th) | -0.4 to -0.9 V - Ensures turn-on with standard logic-level drivers (e.g., 1.8 V/3.3 V GPIO) |
| Qg | 116–175 nC - Determines gate drive power and switching speed in PWM control |
| RthJA | 70 °C/W (steady-state) - Requires ≤1.5 W dissipation for safe operation on 1"×1" FR4 board |
| VSD | -0.6 to -1.1 V - Defines forward voltage drop during reverse-current freewheeling |
Pinout & Package
SO-8 (Narrow) surface-mount package per JEDEC MS-012, 5.0 mm × 4.0 mm footprint, 1.75 mm max height, lead (Pb)-free and halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Source (S) | Common source connection; pins 1–5 internally bonded to reduce resistance and improve current sharing |
| 6 | Gate (G) | Control terminal; requires negative VGS for turn-on; gate resistance Rg = 3.2 Ω |
| 7, 8 | Drain (D) | Power output node; pins 7–8 tied to exposed drain pad for thermal and electrical performance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables ultra-low RDS(on) and high cell density in SO-8, reducing board area vs. discrete alternatives |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment |
| Logic-level gate drive | Operates fully enhanced with VGS ≥ -2.5 V, compatible with 1.8 V, 2.5 V, and 3.3 V microcontroller outputs |
| Integrated body diode | Supports bidirectional current flow in buck converters or reverse-polarity protection without external diode |
| Thermal performance | RthJF = 16–21 °C/W enables direct heat transfer to PCB copper, improving power handling by ~2× vs. standard SO-8 |
Applications
| USB-C Power Delivery Switch | Portable Gaming Console Load Control |
|---|---|
Use Scenario: Switching 5 V/3 A USB-C power path between battery and port under firmware control. IC Role / Device Role / Timing Role: Low-side P-channel load switch enabling hot-swap and reverse-current blocking. Use Value: 7.5 mΩ RDS(on) limits voltage drop to <23 mV and power loss to <70 mW, preserving efficiency in thermally constrained handheld enclosures. | Use Scenario: Enabling/disabling display backlight and audio amplifier rails during sleep/wake transitions. IC Role / Device Role / Timing Role: Logic-controlled power gate managing multiple 3.3 V subsystems with fast turn-off (tf = 210–320 ns). Use Value: Gate threshold of -0.4 to -0.9 V ensures clean turn-on with 1.8 V GPIO, eliminating level-shifter requirements and reducing BOM count. |
| Battery Protection Circuit | Industrial Sensor Node Power Gating |
Use Scenario: Reverse-polarity and overcurrent protection for Li-ion battery packs in medical wearables. IC Role / Device Role / Timing Role: High-side or low-side switch in protection IC interface, leveraging integrated body diode for fault current path. Use Value: VSD = -0.6 to -1.1 V and IS = -2.7 A rating allow controlled freewheeling during short-circuit events without external components. | Use Scenario: Cycling power to BLE radio, environmental sensors, and ADC during duty-cycled data acquisition. IC Role / Device Role / Timing Role: Standby power gate minimizing quiescent current leakage (IDSS ≤ -1 µA at -20 V). Use Value: -1 µA maximum IDSS at 25 °C and -10 µA at 70 °C ensures sub-µA system standby current, extending battery life in multi-year deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4435DY-T1-GE3 | RDS(on) = 5.5 mΩ @ -4.5 V; higher ID (−16 A); same SO-8 package | Better conduction efficiency at >14 A loads; marginally higher gate charge (190 nC) | Select when lower RDS(on) and higher current headroom are required without changing layout |
| IRF7425TRPBF | RDS(on) = 11 mΩ @ -4.5 V; TO-252 package; higher RthJA (100 °C/W) | Requires larger PCB area and heatsinking; less suitable for ultra-thin devices | Choose only if SO-8 footprint is unavailable and thermal budget allows higher junction rise |
Compared with SI4423DY-T1-GE3, Si4435DY-T1-GE3 offers lower conduction loss but demands more gate drive energy, while IRF7425TRPBF trades packaging compactness for cost-sensitive, non-space-constrained designs where thermal derating is acceptable.
Availability
SI4423DY-T1-GE3 is available at Aetrix Electronics and suitable for USB-C power delivery systems, portable gaming console subsystems, and battery-powered sensor nodes requiring stable component supply and long-term manufacturability.
Supply support for SI4423DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and consumer markets.
The Si4423DY belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered for high-efficiency, low-voltage DC power switching in space- and thermally-constrained portable electronics.
FAQ
What is the maximum continuous drain current for SI4423DY-T1-GE3 at 70 °C ambient temperature?
The SI4423DY-T1-GE3 supports -11.5 A continuous drain current at TA = 70 °C with proper PCB copper area (1" × 1" FR4). This rating assumes no additional heatsinking and reflects thermal derating due to reduced power dissipation capability as ambient temperature rises above 25 °C.
Does SI4423DY-T1-GE3 require a gate driver IC for microcontroller interfacing?
No, SI4423DY-T1-GE3 does not require an external gate driver IC when driven by 1.8 V, 2.5 V, or 3.3 V microcontroller GPIOs. Its gate threshold voltage range of -0.4 V to -0.9 V ensures full enhancement at logic-level negative gate bias, though a series resistor (e.g., 10 Ω) is recommended to dampen ringing.
What is the safe operating area (SOA) limitation for SI4423DY-T1-GE3 in single-pulse conditions?
The SI4423DY-T1-GE3 SOA curve shows it can sustain -50 A pulsed drain current at VDS = -5 V for ≤100 µs (duty cycle ≤2%). At higher VDS, current must be reduced per the published SOA graph to avoid second breakdown-e.g., ≤-20 A at VDS = -15 V for the same pulse width.
How does the halogen-free status of SI4423DY-T1-GE3 impact PCB assembly?
The halogen-free status of SI4423DY-T1-GE3 complies with IEC 61249-2-21 and imposes no special reflow profile requirements. It uses standard Pb-free soldering processes (e.g., J-STD-020 Class 3 peak temp ≤260 °C) and is compatible with common no-clean flux chemistries used in high-volume SMT lines.
Can SI4423DY-T1-GE3 be used in high-frequency PWM applications above 500 kHz?
Yes, SI4423DY-T1-GE3 supports PWM switching up to 1 MHz in optimized layouts. With tr = 165–250 ns and tf = 210–320 ns, and total gate charge of 116–175 nC, it achieves efficient operation at 500–1000 kHz when paired with low-impedance gate drivers and minimized parasitic inductance in the gate loop.
SI4423DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 14A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 600µA
- Gate Charge (Qg) (Max) @ Vgs:
- 175 nC @ 5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4423DY-T1-GE3 FAQ
1.How can I place an order for SI4423DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4423DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4423DY-T1-GE3 reliable?
The price and inventory of SI4423DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4423DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4423DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4423DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4423DY-T1-GE3?
SI4423DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4423DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4423DY-T1-GE3?
For technical support, including SI4423DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4423DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4423DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4423DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4423DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4423DY-T1-GE3?
All SI4423DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4423DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4423DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4423DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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