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Vishay Siliconix SI4425BDY-T1-E3
- Part No.:
- SI4425BDY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4425BDY-T1-E3.pdf
- Description:
- MOSFET P-CH 30V 8.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:1,347
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Product details
Overview
SI4425BDY-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in portable computing power rails. It features -30 V VDS, 0.012 Ω RDS(on) at VGS = -10 V, -11.4 A continuous drain current, and SO-8 package. It serves as a main power switch in notebook PC battery path management.
For engineers reviewing the SI4425BDY-T1-E3 datasheet, SI4425BDY-T1-E3 pinout, SI4425BDY-T1-E3 application, or SI4425BDY-T1-E3 equivalent, key selection criteria include verified -30 V blocking capability, low gate charge (64 nC typical), thermal resistance (RthJA = 70 °C/W), integrated body diode performance, and Pb-free RoHS-compliant packaging.
Technical Context
This device uses Vishay's TrenchFET® process with high cell density to achieve low on-resistance and fast switching. Its gate threshold voltage range (-1.0 V to -3.0 V) enables robust logic-level drive compatibility with standard -5 V or -3.3 V control signals.
The SO-8 package provides dual-sided thermal dissipation via exposed drain pads, supporting steady-state power dissipation up to 1.6 W at 70 °C ambient. The body diode exhibits VSD = -0.8 V to -1.2 V at -2.5 A, enabling bidirectional current handling in synchronous buck or OR-ing configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum reverse-biased drain-source voltage before avalanche breakdown |
| RDS(on) | 0.012 Ω @ VGS = -10 V - Enables <140 mW conduction loss at 11.4 A load current |
| ID (continuous) | -11.4 A @ TA = 25 °C - Sustained load current rating under standard PCB mounting conditions |
| Qg | 64 nC typical - Determines gate driver strength requirement and switching transition time |
| VGS(th) | -1.0 to -3.0 V - Ensures reliable turn-on with common negative logic-level gate drivers |
| RthJA | 70 °C/W steady state - Defines junction-to-ambient temperature rise per watt of dissipated power |
| VSD | -0.8 to -1.2 V @ IS = -2.5 A - Specifies forward voltage drop of integrated source-drain body diode |
Pinout & Package
SO-8 (narrow-body, JEDEC MS-012), surface-mount package with exposed drain pad for enhanced thermal transfer. Pin 1–8 arranged in standard dual-in-line configuration with G, S, D terminals repeated across both sides.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Common high-current output node; electrically tied to exposed thermal pad; handles full load current and dissipates heat |
| 5 | Gate (G) | Control input; requires -10 V to fully enhance; 100 nA leakage ensures low static power consumption |
| Source (S) | Source (S) | Reference node for gate drive; connected to system ground or negative rail; defines VGS reference point |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers 0.012 Ω RDS(on) in SO-8 without requiring die size increase or higher cost packaging |
| Halogen-free construction | Complies with IEC 61249-2-21; eliminates brominated flame retardants while maintaining UL 94 V-0 flammability rating |
| RoHS-compliant and Pb-free | Meets Directive 2002/95/EC; compatible with lead-free reflow profiles (peak 260 °C) |
| Low Qgd/Qg ratio | 17 nC / 64 nC = 0.265 - Reduces Miller effect, improving hard-switching robustness in DC-DC converters |
| Specified RthJF | 15 °C/W typical - Quantifies thermal path from junction to drain pad, critical for heatsink design in high-power load switches |
Applications
| Notebook PC Battery Switch | Desktop PC VRM High-Side Switch |
|---|---|
Use Scenario: Controls battery-to-system power path during AC adapter insertion/removal and battery charging cycles. IC Role / Device Role / Timing Role: P-channel load switch managing bidirectional current flow between Li-ion battery and main power rail. Use Value: Low RDS(on) minimizes voltage drop and self-heating; body diode enables reverse current during hot-swap transitions. | Use Scenario: Implements high-side OR-ing function in multi-rail desktop VRMs to prevent backfeed between parallel power stages. IC Role / Device Role / Timing Role: Synchronous load switch controlling power delivery from primary and backup 12 V sources. Use Value: Fast turn-off (150 ns td(off)) prevents shoot-through; low Qg supports high-frequency PWM control. |
| USB-C Power Delivery Load Switch | Industrial PLC I/O Protection |
Use Scenario: Isolates downstream USB-C PD sink circuits during fault detection or port negotiation. IC Role / Device Role / Timing Role: Logic-controlled power gate placed between PD controller and Type-C receptacle VBUS line. Use Value: -30 V rating accommodates 20 V PD specification margin; -1.0 V VGS(th) allows direct interface with 3.3 V microcontroller GPIO. | Use Scenario: Protects programmable logic controller digital input modules from field-wiring polarity reversal or overvoltage transients. IC Role / Device Role / Timing Role: Reverse-polarity protection switch placed upstream of optocoupler or ADC input stage. Use Value: Integrated body diode blocks reverse current; RDS(on) stability over -55 °C to 150 °C ensures operation in harsh industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PbF | RDS(on) = 0.014 Ω @ -10 V; Qg = 72 nC; SO-8 but non-halogen-free | Higher gate charge increases driver demand; lacks halogen-free certification | Acceptable where halogen content is unrestricted and thermal margin permits 0.002 Ω higher RDS(on) |
| DMN3026LSD-13 | RDS(on) = 0.013 Ω @ -10 V; Qg = 58 nC; 30 V rating; same SO-8 footprint | Lower gate charge improves switching efficiency; slightly higher RDS(on) than SI4425BDY-T1-E3 | Preferred when minimizing gate drive losses is prioritized over absolute lowest conduction loss |
Compared with IRF7425PbF and DMN3026LSD-13, the SI4425BDY-T1-E3 offers the lowest RDS(on) and halogen-free compliance, making it optimal for space-constrained, thermally sensitive, and environmentally regulated notebook PC designs.
Availability
SI4425BDY-T1-E3 is available at Aetrix Electronics and suitable for notebook PCs, desktop VRMs, USB-C power delivery systems, and industrial PLC I/O protection requiring stable component supply and long-term manufacturability.
Supply support for SI4425BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si4425BDY series belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered specifically for high-current, low-voltage load switching in portable and computing applications where thermal performance and Pb-free compliance are critical.
FAQ
What is the maximum continuous drain current rating for SI4425BDY-T1-E3 at 70 °C ambient?
The SI4425BDY-T1-E3 supports -9.1 A continuous drain current at TA = 70 °C when mounted on a standard 1" × 1" FR4 board. This rating reflects derating due to reduced thermal dissipation at elevated ambient temperatures and is validated per Vishay's test conditions in Document 72000 Rev. E.
Does SI4425BDY-T1-E3 have an integrated body diode, and what is its forward voltage?
Yes, the SI4425BDY-T1-E3 includes a monolithic body diode with VSD = -0.8 V to -1.2 V at -2.5 A source current and 25 °C junction temperature. This diode enables reverse-current conduction in OR-ing and hot-swap applications without external components.
What is the gate threshold voltage range specified for SI4425BDY-T1-E3?
The SI4425BDY-T1-E3 has a gate threshold voltage VGS(th) range of -1.0 V to -3.0 V, measured at VDS = VGS and ID = -250 µA. This ensures reliable turn-on with common negative logic-level control signals while avoiding unintended conduction near 0 V.
Is SI4425BDY-T1-E3 compatible with lead-free reflow soldering processes?
Yes, the SI4425BDY-T1-E3 is Pb-free and RoHS-compliant, qualified for standard lead-free reflow profiles with peak temperatures up to 260 °C. Its packaging meets J-STD-020 moisture sensitivity level 1 requirements for unlimited floor life at ≤30 °C/60% RH.
What is the thermal resistance from junction to ambient (RthJA) for SI4425BDY-T1-E3 under steady-state conditions?
The SI4425BDY-T1-E3 has a maximum RthJA of 85 °C/W and a typical value of 70 °C/W under steady-state conditions on a 1" × 1" FR4 board. This parameter is essential for calculating maximum allowable power dissipation and junction temperature in thermal design.
SI4425BDY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 11.4A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4425BDY-T1-E3 FAQ
1.How can I place an order for SI4425BDY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4425BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4425BDY-T1-E3 reliable?
The price and inventory of SI4425BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4425BDY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4425BDY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4425BDY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4425BDY-T1-E3?
SI4425BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4425BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4425BDY-T1-E3?
For technical support, including SI4425BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4425BDY-T1-E3 requirements.
6.How does Aetrix verify that SI4425BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4425BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4425BDY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4425BDY-T1-E3?
All SI4425BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4425BDY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4425BDY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4425BDY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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