Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4425BDY-T1-GE3

Name: SI4425BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4425BDY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI4425BDY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4425BDY-T1-GE3.pdf

Description:: MOSFET P-CH 30V 8.8A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,654

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI4425BDY-T1-GE3 from Vishay Siliconix is a P-channel 30-V (D-S) TrenchFET® Power MOSFET in SO-8 package, rated for -11.4 A continuous drain current at 25 °C, with R_DS(on) = 0.012 Ω at V_GS = -10 V and 0.019 Ω at V_GS = -4.5 V, designed for high-efficiency load switching in notebook and desktop PCs.

For engineers reviewing the SI4425BDY-T1-GE3 datasheet, SI4425BDY-T1-GE3 pinout, SI4425BDY-T1-GE3 application, or SI4425BDY-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant construction, low gate charge (64 nC typical), fast switching (t_d(off) = 100 ns), integrated body diode performance (V_SD = -0.8 V at I_S = -2.5 A), and thermal resistance (R_thJA = 70 °C/W steady-state).

Technical Context

This P-channel MOSFET operates with a gate threshold voltage (V_GS(th)) ranging from -1.0 V to -3.0 V, enabling robust turn-on control under low-voltage logic drive. Its trench-based silicon process delivers high cell density and stable R_DS(on) over temperature - 0.019 Ω at V_GS = -4.5 V and I_D = -9.1 A, with normalized on-resistance variation ≤1.6× across -55 °C to 150 °C.

The device supports pulsed drain currents up to -50 A and features a source-drain reverse recovery time (t_rr) of 41–80 ns, making it suitable for synchronous rectification and bidirectional power path management. Its SO-8 footprint provides standardized PCB layout compatibility while maintaining low junction-to-foot thermal resistance (R_thJF = 15 °C/W typical) for efficient heat transfer to copper planes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 3.3 V/5 V rail-level load switching
R_DS(on) @ V_GS = -10 V	0.012 Ω - Enables <140 mW conduction loss at -11.4 A
R_DS(on) @ V_GS = -4.5 V	0.019 Ω - Supports direct logic-level drive from standard GPIOs
Q_g	64 nC typical - Reduces gate drive power and enables >1 MHz switching
t_d(off)	100 ns typical - Minimizes dead-time losses in half-bridge configurations
V_SD	-0.8 V typical at I_S = -2.5 A - Low forward drop improves reverse-current efficiency
R_thJA	70 °C/W steady-state - Requires minimal copper area for thermal management

Pinout & Package

SI4425BDY-T1-GE3 is housed in a standard SO-8 (narrow) surface-mount package per JEDEC MS-012, with exposed drain pads for enhanced thermal performance. Pin 1 is Gate (G), Pins 2–4 and 6–8 are Source (S), and Pins 5 and 7 are Drain (D) - dual-drain configuration improves current handling and thermal spreading.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts -10 V or -4.5 V logic for full enhancement
2, 3, 4, 6, 8	Source (S)	Common source node; electrically tied internally for low-inductance return path
5, 7	Drain (D)	Power output terminal; dual pins reduce current density and thermal resistance

Key Features

Feature	Design Value
TrenchFET® technology	Enables high cell density and stable R_DS(on) across temperature and lifetime
Halogen-free & RoHS-compliant	Fulfills IEC 61249-2-21 and EU Directive 2002/95/EC environmental requirements
Low Q_gd/Q_g ratio	17/64 nC - Improves Miller immunity and reduces switching instability
Integrated body diode	V_SD = -0.8 V at -2.5 A - Supports bidirectional current without external diode
SO-8 thermal design	R_thJF = 15 °C/W - Direct thermal path to PCB ground plane via drain pins

Applications

Notebook PC Load Switching	Desktop PC VRM Output Stage
Use Scenario: High-side power rail enable/disable for CPU core voltage domains during sleep/wake transitions. IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V or 5 V system rails with fast turn-off (<100 ns) to prevent shoot-through. Use Value: 0.019 Ω R_DS(on) at -4.5 V gate drive eliminates need for level-shifting circuitry and reduces BOM count.	Use Scenario: Synchronous rectifier in multiphase buck converters delivering >20 A to GPU or chipset rails. IC Role / Device Role / Timing Role: Low-side synchronous FET operating in parallel with high-side controller, leveraging fast t_r/t_f (13/53 ns) for tight PWM timing. Use Value: Dual-drain SO-8 layout lowers parasitic inductance and improves current sharing across paralleled devices.
USB-C Power Delivery Switch	Industrial PLC I/O Protection
Use Scenario: Bidirectional 20 V power path control in USB-C PD sink applications with reverse-current blocking. IC Role / Device Role / Timing Role: Reverse-polarity protected load switch with integrated body diode conducting in fault direction only. Use Value: V_SD = -0.8 V ensures <2 W dissipation at 2.5 A reverse current, avoiding thermal shutdown.	Use Scenario: Overvoltage and reverse-polarity protection for 24 V DC field I/O channels in programmable logic controllers. IC Role / Device Role / Timing Role: Input-stage protection FET placed before TVS and current-limiting circuitry to isolate faults. Use Value: -30 V V_DS rating withstands 40 V transients per IEC 61000-4-5, while R_DS(on) stability ensures consistent clamping behavior.

Notebook PC Load Switching

Desktop PC VRM Output Stage

Use Scenario: High-side power rail enable/disable for CPU core voltage domains during sleep/wake transitions.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V or 5 V system rails with fast turn-off (<100 ns) to prevent shoot-through.

Use Value: 0.019 Ω R_DS(on) at -4.5 V gate drive eliminates need for level-shifting circuitry and reduces BOM count.

Use Scenario: Synchronous rectifier in multiphase buck converters delivering >20 A to GPU or chipset rails.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating in parallel with high-side controller, leveraging fast t_r/t_f (13/53 ns) for tight PWM timing.

Use Value: Dual-drain SO-8 layout lowers parasitic inductance and improves current sharing across paralleled devices.

USB-C Power Delivery Switch

Industrial PLC I/O Protection

Use Scenario: Bidirectional 20 V power path control in USB-C PD sink applications with reverse-current blocking.

IC Role / Device Role / Timing Role: Reverse-polarity protected load switch with integrated body diode conducting in fault direction only.

Use Value: V_SD = -0.8 V ensures <2 W dissipation at 2.5 A reverse current, avoiding thermal shutdown.

Use Scenario: Overvoltage and reverse-polarity protection for 24 V DC field I/O channels in programmable logic controllers.

IC Role / Device Role / Timing Role: Input-stage protection FET placed before TVS and current-limiting circuitry to isolate faults.

Use Value: -30 V V_DS rating withstands 40 V transients per IEC 61000-4-5, while R_DS(on) stability ensures consistent clamping behavior.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7413PbF	R_DS(on) = 0.014 Ω @ -10 V; Q_g = 55 nC; SO-8 but non-halogen-free	Higher gate charge increases driver loss; lacks halogen-free certification	Prefer SI4425BDY-T1-GE3 where environmental compliance or lower switching loss is required
DMN3026LSD-13	R_DS(on) = 0.017 Ω @ -10 V; Q_g = 42 nC; lead-free only (not halogen-free)	Lower Q_g improves high-frequency efficiency but higher R_DS(on) raises conduction loss	Select SI4425BDY-T1-GE3 when combined low R_DS(on) and halogen-free status are mandatory

Compared with IRF7413PbF and DMN3026LSD-13, SI4425BDY-T1-GE3 uniquely balances ultra-low R_DS(on), industry-leading gate charge efficiency, and full halogen-free compliance - critical for OEMs targeting global environmental regulations and thermally constrained PCB layouts.

Availability

SI4425BDY-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power sequencing, desktop VRM synchronous rectification, and industrial I/O protection requiring stable component supply, long-term lifecycle support, and certified environmental compliance.

Supply support for SI4425BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The Si4425BDY product line delivers high-density P-channel TrenchFET® MOSFETs optimized for compact, high-efficiency load switching in space-constrained computing and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SI4425BDY-T1-GE3 at 70 °C ambient?

The SI4425BDY-T1-GE3 supports -9.1 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under standard FR4 board conditions. The SI4425BDY-T1-GE3 maintains stable R_DS(on) across this range, ensuring predictable conduction loss in real-world thermal environments.

Does SI4425BDY-T1-GE3 support logic-level gate drive?

Yes, SI4425BDY-T1-GE3 is fully compatible with logic-level gate drive: its R_DS(on) is specified at V_GS = -4.5 V (0.019 Ω), matching standard 5 V or 3.3 V microcontroller outputs. The gate threshold voltage range (-1.0 V to -3.0 V) ensures reliable turn-on with margin, and the low Q_g (64 nC) minimizes required drive strength. SI4425BDY-T1-GE3 does not require external level shifters in most digital-control applications.

What is the safe operating area (SOA) limitation for SI4425BDY-T1-GE3 in single-pulse conditions?

In single-pulse operation, SI4425BDY-T1-GE3 is limited by R_DS(on) at low V_DS, by peak current (I_DM = -50 A) at mid V_DS, and by avalanche energy at high V_DS. The published SOA curve shows 100% duty-cycle DC limit of -8.8 A at V_DS = -5 V, scaling to -1 A at V_DS = -30 V for 10 ms pulses. SI4425BDY-T1-GE3 must be operated within these boundaries to avoid thermal runaway or bond-wire failure.

How does the dual-drain configuration of SI4425BDY-T1-GE3 improve thermal performance?

The dual-drain configuration (Pins 5 and 7) in SI4425BDY-T1-GE3 reduces current density per pin and lowers effective thermal resistance from junction to PCB copper. With R_thJF = 15 °C/W typical, heat flows directly through both drain leads into the board's ground plane, improving power dissipation by ~25% versus single-drain SO-8 equivalents. This design allows SI4425BDY-T1-GE3 to sustain higher average currents without heatsinking in compact layouts.

Is SI4425BDY-T1-GE3 suitable for reverse-current protection in USB-C PD applications?

Yes, SI4425BDY-T1-GE3 is well-suited for reverse-current protection in USB-C PD due to its integrated body diode (V_SD = -0.8 V at -2.5 A) and -30 V V_DS rating. When oriented as a high-side switch, it blocks reverse current during sink-fault conditions while dissipating minimal power. SI4425BDY-T1-GE3's halogen-free and RoHS compliance also meets strict end-product environmental requirements for consumer USB-C devices.

SI4425BDY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 11.4A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4425BDY-T1-GE3 FAQ

1.How can I place an order for SI4425BDY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4425BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4425BDY-T1-GE3 reliable?

The price and inventory of SI4425BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4425BDY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4425BDY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4425BDY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4425BDY-T1-GE3?

SI4425BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4425BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4425BDY-T1-GE3?

For technical support, including SI4425BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4425BDY-T1-GE3 requirements.

6.How does Aetrix verify that SI4425BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4425BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4425BDY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4425BDY-T1-GE3?

All SI4425BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4425BDY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4425BDY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4425BDY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …