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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4426DY-T1-E3

Name: SI4426DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4426DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4426DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4426DY-T1-E3.pdf

Description:: MOSFET N-CH 20V 6.5A 8SO

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Product details

Overview

SI4426DY-T1-E3 from Vishay Siliconix is an N-channel 20-V TrenchFET® power MOSFET in SO-8 package, delivering R_DS(on) = 0.025 Ω at V_GS = 4.5 V and ±8.5 A continuous drain current at T_A = 25 °C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and battery protection circuits.

For engineers reviewing the SI4426DY-T1-E3 datasheet, SI4426DY-T1-E3 pinout, SI4426DY-T1-E3 application, or SI4426DY-T1-E3 equivalent, key selection criteria include its low gate threshold (0.6–1.4 V), fast switching (t_d(on) = 40–60 ns), integrated body diode (V_SD = 0.8–1.2 V), thermal resistance (R_thJA = 70 °C/W steady-state), and Pb-free/halogen-free compliance per RoHS and IEC 61249-2-21.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching in compact surface-mount packages. Its gate threshold voltage range (0.6–1.4 V) enables direct drive from 2.5 V and 3.3 V logic, while the low Q_g (25–50 nC) supports high-frequency operation up to several MHz in synchronous buck stages.

The device integrates a robust body diode with reverse recovery time t_rr = 40–60 ns and forward voltage V_SD = 0.8–1.2 V at I_S = 2.1 A, making it suitable for bidirectional current paths in battery management and USB power delivery switches where reverse conduction must be controlled without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12 V rail applications with margin
R_DS(on) @ 4.5 V	0.025 Ω - Enables <100 mW conduction loss at 5 A in compact layouts
I_D (continuous)	±8.5 A @ T_A = 25 °C - Supports high-current load switching on FR4 PCBs
Q_g	25–50 nC - Low gate charge reduces driver power and enables efficient 1–2 MHz PWM
V_GS(th)	0.6–1.4 V - Compatible with 2.5 V/3.3 V microcontroller GPIO without level shifting
t_r/t_f	40–60 ns - Minimizes switching losses in high-frequency DC-DC converters
R_thJA	70 °C/W (steady-state) - Requires ≤1.5 W dissipation for safe 125 °C junction operation

Pinout & Package

SO-8 (narrow-body, JEDEC MS-012), surface-mount package with exposed drain pad for thermal enhancement. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled terminals - all connected to common drain node and thermal pad
6	Gate (G)	Control terminal - requires <50 nC charge for full enhancement; sensitive to ESD
Source (S)	Source (S)	Pin 1 is source - confirmed by top-view marking and schematic symbol orientation

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area ratio for SO-8, enabling smaller PCB footprints vs. planar MOSFETs
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer and industrial CE-marked products
Low V_GS(th) distribution	0.6–1.4 V range ensures reliable turn-on across temperature and process variation without overdrive
Fast body diode recovery	t_rr = 40–60 ns supports synchronous rectification in >500 kHz converters without shoot-through risk
Thermal performance	R_thJF = 20–25 °C/W (junction-to-foot) enables direct heat transfer to PCB copper pour for passive cooling

Applications

Battery Protection Circuit	USB Type-C Power Delivery Switch
Use Scenario: Bidirectional overcurrent and short-circuit protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Dual N-channel back-to-back switch controlling charge/discharge path with integrated body diode conduction during reverse current. Use Value: R_DS(on) = 0.025 Ω limits voltage drop to <130 mV at 5 A, preserving battery capacity and reducing thermal stress on PCB traces.	Use Scenario: 5–20 V bidirectional power path control in USB PD 3.0 sink devices. IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (t_f = 40–60 ns) to meet USB PD fault response timing requirements. Use Value: Low Q_g and 0.6–1.4 V V_GS(th) allow direct MCU GPIO control without external drivers, simplifying BOM and layout.
DC-DC Synchronous Rectifier	Hot-Swap Controller FET
Use Scenario: Secondary-side rectification in isolated 12 V → 3.3 V/5 V flyback or forward converters. IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diode; body diode conducts during dead-time. Use Value: V_SD = 0.8–1.2 V and t_rr = 40–60 ns minimize reverse recovery loss and improve efficiency by ≥3% vs. 40 V Schottky.	Use Scenario: Inrush current limiting and fault isolation in 12 V industrial backplane slots. IC Role / Device Role / Timing Role: Main pass FET in discrete hot-swap circuit with current sensing via R_DS(on) monitoring. Use Value: ±8.5 A rating and 20 V V_DS support 12 V systems with transient margin; SO-8 footprint allows compact current-sense resistor placement.

Battery Protection Circuit

USB Type-C Power Delivery Switch

Use Scenario: Bidirectional overcurrent and short-circuit protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Dual N-channel back-to-back switch controlling charge/discharge path with integrated body diode conduction during reverse current.

Use Value: R_DS(on) = 0.025 Ω limits voltage drop to <130 mV at 5 A, preserving battery capacity and reducing thermal stress on PCB traces.

Use Scenario: 5–20 V bidirectional power path control in USB PD 3.0 sink devices.

IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (t_f = 40–60 ns) to meet USB PD fault response timing requirements.

Use Value: Low Q_g and 0.6–1.4 V V_GS(th) allow direct MCU GPIO control without external drivers, simplifying BOM and layout.

DC-DC Synchronous Rectifier

Hot-Swap Controller FET

Use Scenario: Secondary-side rectification in isolated 12 V → 3.3 V/5 V flyback or forward converters.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diode; body diode conducts during dead-time.

Use Value: V_SD = 0.8–1.2 V and t_rr = 40–60 ns minimize reverse recovery loss and improve efficiency by ≥3% vs. 40 V Schottky.

Use Scenario: Inrush current limiting and fault isolation in 12 V industrial backplane slots.

IC Role / Device Role / Timing Role: Main pass FET in discrete hot-swap circuit with current sensing via R_DS(on) monitoring.

Use Value: ±8.5 A rating and 20 V V_DS support 12 V systems with transient margin; SO-8 footprint allows compact current-sense resistor placement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si4425DY-T1-E3	R_DS(on) = 0.019 Ω @ 4.5 V (lower), but V_DS = 30 V (higher); same SO-8 package and pinout	Better for 24 V systems requiring higher blocking voltage; slightly lower conduction loss at same current	Select Si4425DY-T1-E3 if system V_IN exceeds 15 V or R_DS(on) reduction is critical
IRF7470PBF	R_DS(on) = 0.022 Ω @ 4.5 V; SO-8 package but different pinout (G/S/D arrangement differs)	Requires PCB redesign due to non-identical pin mapping; not drop-in compatible	Choose IRF7470PBF only when layout revision is acceptable and tighter R_DS(on) justifies rework

Compared with SI4426DY-T1-E3, Si4425DY-T1-E3 offers lower on-resistance and higher voltage rating in identical packaging, while IRF7470PBF delivers marginally better conduction performance but demands board-level changes due to incompatible pin assignment.

Availability

SI4426DY-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB Type-C power delivery switches, DC-DC synchronous rectifiers, and hot-swap controller designs requiring stable component supply and long-term industrial availability.

Supply support for SI4426DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si4426DY belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-efficiency, high-density power conversion in space-constrained applications such as portable electronics and distributed power architectures.

FAQ

What is the maximum continuous drain current for SI4426DY-T1-E3 at 70 °C ambient?

The SI4426DY-T1-E3 supports ±5.2 A continuous drain current at T_A = 70 °C, derated from ±6.5 A at 25 °C per the Absolute Maximum Ratings table. This value assumes standard SO-8 mounting on FR4 and accounts for thermal resistance R_thJA = 70 °C/W. For higher current, PCB copper pour or forced airflow is required to maintain T_J ≤ 150 °C.

Is SI4426DY-T1-E3 pin-compatible with Si4425DY-T1-E3?

Yes, SI4426DY-T1-E3 is pin-compatible with Si4425DY-T1-E3 - both use identical SO-8 (MS-012) packaging with matching pin 1 (source), pin 6 (gate), and drain-connected pins 1–5/7–8. The datasheets confirm identical mechanical drawings and terminal assignments, enabling direct replacement without PCB modification.

Does SI4426DY-T1-E3 have a specified avalanche rating?

No, the SI4426DY-T1-E3 datasheet does not specify unclamped inductive switching (UIS) or avalanche energy rating. It is rated for pulsed drain current (I_DM = ±40 A, 10 µs) under clamped conditions only. Designers requiring avalanche capability must select a part explicitly rated for UIS, such as Vishay's SQ series or designated avalanche-rated MOSFETs.

What is the typical gate charge required to fully enhance SI4426DY-T1-E3?

The SI4426DY-T1-E3 has a total gate charge (Q_g) of 25–50 nC at V_DS = 10 V, V_GS = 4.5 V, and I_D = 8.5 A. This value determines driver sizing: for 1 MHz switching, average gate drive current ≈ Q_g × f_SW = ~35 mA, requiring a driver capable of ≥100 mA peak current to ensure fast edge rates.

Can SI4426DY-T1-E3 be used in linear mode (as a pass transistor)?

The SI4426DY-T1-E3 is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve is not provided in the datasheet, and thermal runaway risk increases significantly above V_DS > 5 V in linear region. For adjustable LDO or analog pass applications, Vishay's dedicated linear MOSFETs (e.g., Si7157DP) or discrete solutions with SOA validation are recommended instead of SI4426DY-T1-E3.

SI4426DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 8.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4426DY-T1-E3 FAQ

1.How can I place an order for SI4426DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4426DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4426DY-T1-E3 reliable?

The price and inventory of SI4426DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4426DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4426DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4426DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4426DY-T1-E3?

SI4426DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4426DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4426DY-T1-E3?

For technical support, including SI4426DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4426DY-T1-E3 requirements.

6.How does Aetrix verify that SI4426DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4426DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4426DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4426DY-T1-E3?

All SI4426DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4426DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4426DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4426DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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