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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4427BDY-T1-E3

Name: SI4427BDY-T1-E3
Brand: Vishay Siliconix
SKU: SI4427BDY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4427BDY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4427BDY-T1-E3.pdf

Description:: MOSFET P-CH 30V 9.7A 8SO

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Product details

Overview

SI4427BDY-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in low-voltage DC systems. It features -30 V drain-source rating, 12.6 A continuous drain current at 25 °C, R_DS(on) of 10.5 mΩ at V_GS = -10 V, and SO-8 package for surface-mount power management in industrial power supplies and battery protection circuits.

For engineers reviewing the SI4427BDY-T1-E3 datasheet, SI4427BDY-T1-E3 pinout, SI4427BDY-T1-E3 application, or SI4427BDY-T1-E3 equivalent, key selection criteria include verified P-channel logic-level gate drive compatibility, thermal resistance (R_thJA = 70 °C/W), and guaranteed R_DS(on) performance across -55 to 150 °C junction temperature range.

Technical Context

This MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance with fast switching characteristics. Its gate threshold voltage (-0.6 to -1.4 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level control signals, and its integrated body diode supports reverse-current handling in H-bridge and OR-ing configurations.

The device operates within ±12 V gate-source voltage limits and sustains -30 V drain-source blocking capability. Thermal design is supported by validated junction-to-foot resistance (R_thJF = 15–18 °C/W), making it suitable for compact PCB layouts where heatsinking is constrained.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-to-source voltage before breakdown; defines safe operating range in negative-rail switching applications.
R_DS(on) @ V_GS = -10 V	0.0105 Ω - Confirmed on-resistance at full gate drive; enables <130 mW conduction loss at 12.6 A.
I_D (continuous, T_A = 25 °C)	-12.6 A - Verified steady-state current capacity without derating; supports high-current load switching.
V_GS(th)	-0.6 to -1.4 V - Gate threshold range ensuring turn-on with 3.3 V microcontroller outputs.
Q_g	47.2–70 nC - Total gate charge determining driver strength requirement for 100 kHz+ PWM operation.
R_thJA	70 °C/W (steady state) - Thermal resistance defining temperature rise per watt on standard FR4 board; critical for thermal margin calculation.

Pinout & Package

SI4427BDY-T1-E3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads for thermal enhancement. Pin numbering follows JEDEC MS-012 convention with pins 1–4 on left side and 5–8 on right side when viewed top-down.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally connected drain terminals; share current path and provide low-inductance thermal interface to PCB copper pour.
5	Gate (G)	Control terminal requiring ≤±12 V drive; sensitive to ESD but compatible with standard logic-level drivers.
Source (S)	Source (S)	Common source node tied to pins 1–4 internal connection; serves as reference for gate drive and current return path.

Key Features

Feature	Design Value
TrenchFET® construction	Enables 10.5 mΩ R_DS(on) in SO-8 footprint-reducing board area vs. discrete TO-220 alternatives.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC-supports environmental compliance in industrial and consumer end equipment.
Low V_GS(th) range	-0.6 to -1.4 V threshold ensures robust turn-on with 3.3 V GPIOs-eliminates need for level-shifting circuitry.
Integrated body diode	V_SD = -0.8 to -1.2 V at -2.5 A-enables bidirectional current flow in OR-ing and back-bias protection without external diodes.

Applications

Battery Protection Circuit	Industrial Power Supply Sequencing
Use Scenario: Reverse-polarity and overcurrent protection in 12 V Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling main battery discharge path. Use Value: Low R_DS(on) minimizes voltage drop and heat generation during sustained 10 A load currents.	Use Scenario: Controlled power-up sequencing of auxiliary rails in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Load switch enabling soft-start and fault-isolation between primary and secondary DC/DC converters. Use Value: Fast turn-off delay (242–360 ns) supports precise timing coordination with system supervisor ICs.
USB-C Power Delivery Sink	Automotive Body Control Module
Use Scenario: Input power path management for USB-C PD sink devices accepting up to 20 V input. IC Role / Device Role / Timing Role: Reverse-voltage blocking switch placed between connector and buck converter input. Use Value: -30 V V_DS rating provides 10 V margin above 20 V PD specification-ensuring long-term reliability under transients.	Use Scenario: Local load switching for interior lighting and sensor biasing in 12 V automotive BCMs. IC Role / Device Role / Timing Role: Low-side or high-side switch controlled by CAN-linked microcontroller. Use Value: Guaranteed operation from -55 to 150 °C meets AEC-Q101 ambient requirements without derating.

Battery Protection Circuit

Industrial Power Supply Sequencing

Use Scenario: Reverse-polarity and overcurrent protection in 12 V Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling main battery discharge path.

Use Value: Low R_DS(on) minimizes voltage drop and heat generation during sustained 10 A load currents.

Use Scenario: Controlled power-up sequencing of auxiliary rails in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: Load switch enabling soft-start and fault-isolation between primary and secondary DC/DC converters.

Use Value: Fast turn-off delay (242–360 ns) supports precise timing coordination with system supervisor ICs.

USB-C Power Delivery Sink

Automotive Body Control Module

Use Scenario: Input power path management for USB-C PD sink devices accepting up to 20 V input.

IC Role / Device Role / Timing Role: Reverse-voltage blocking switch placed between connector and buck converter input.

Use Value: -30 V V_DS rating provides 10 V margin above 20 V PD specification-ensuring long-term reliability under transients.

Use Scenario: Local load switching for interior lighting and sensor biasing in 12 V automotive BCMs.

IC Role / Device Role / Timing Role: Low-side or high-side switch controlled by CAN-linked microcontroller.

Use Value: Guaranteed operation from -55 to 150 °C meets AEC-Q101 ambient requirements without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7413PbF	R_DS(on) = 12.5 mΩ @ -10 V; higher Q_g (85 nC); SO-8 package with same pinout.	Slightly lower current rating (-11 A) and slower switching; acceptable where thermal margin exists.	Prefer SI4427BDY-T1-E3 for higher efficiency and faster response in space-constrained designs.
DMN3027LSD-13	R_DS(on) = 11.5 mΩ @ -10 V; lower V_GS(th) (-0.5 to -1.2 V); same SO-8 footprint but different internal drain pad layout.	Improved gate sensitivity but requires PCB layout review due to alternate thermal pad configuration.	Choose SI4427BDY-T1-E3 when proven thermal performance on standard FR4 is required without redesign.

Compared with IRF7413PbF and DMN3027LSD-13, SI4427BDY-T1-E3 delivers the lowest R_DS(on) in its class with validated thermal resistance and consistent gate drive behavior-making it optimal for high-reliability, thermally constrained industrial switching.

Availability

SI4427BDY-T1-E3 is available at Aetrix Electronics and suitable for industrial power supplies, battery management systems, and automotive body electronics requiring stable component supply and long-lifecycle support.

Supply support for SI4427BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.

The Si4427BDY series belongs to Vishay's TrenchFET® P-channel power MOSFET family, engineered for high-efficiency, low-voltage DC switching in space-constrained power management systems.

FAQ

What is the maximum continuous drain current for SI4427BDY-T1-E3 at 70 °C ambient?

The SI4427BDY-T1-E3 supports -7.7 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating on a standard 1" × 1" FR4 board and must be used in thermal design calculations alongside R_thJA = 70 °C/W to ensure TJ remains ≤150 °C under operating conditions. The SI4427BDY-T1-E3 datasheet confirms this rating is valid for steady-state conduction without pulse limitations.

Does SI4427BDY-T1-E3 require a gate resistor for typical 3.3 V MCU drive?

Yes, a gate resistor is recommended for SI4427BDY-T1-E3 even with 3.3 V MCU drive to control dV/dt and prevent ringing during switching. While the SI4427BDY-T1-E3 gate threshold allows turn-on at 3.3 V, its total gate charge (47–70 nC) and low input capacitance demand careful driver impedance matching. A 10–47 Ω series resistor is typically used to dampen oscillation and reduce EMI-verified in Vishay Application Note 826 for SO-8 MOSFETs like the SI4427BDY-T1-E3.

Is SI4427BDY-T1-E3 suitable for reverse-voltage protection in 24 V systems?

No, SI4427BDY-T1-E3 is not rated for 24 V reverse-voltage protection. Its V_DS rating is -30 V, providing only 6 V margin above 24 V-insufficient for automotive load-dump transients or industrial surge events. For 24 V systems, SI4427BDY-T1-E3 should be used only in ≤18 V nominal applications (e.g., 12 V battery systems), where its -30 V rating ensures adequate safety margin. Always verify transient clamping requirements against the SI4427BDY-T1-E3 absolute maximum ratings.

What is the body diode forward voltage of SI4427BDY-T1-E3 at -2.5 A?

The body diode forward voltage (V_SD) of SI4427BDY-T1-E3 is -0.8 to -1.2 V at IS = -2.5 A and V_GS = 0 V, as measured per the Electrical Specifications table. This diode is intrinsic to the MOSFET structure and enables freewheeling current in inductive loads or reverse-current paths. The SI4427BDY-T1-E3 datasheet specifies this parameter at 25 °C; V_SD increases slightly with temperature but remains within -1.4 V up to 125 °C.

Can SI4427BDY-T1-E3 be used in parallel with identical units for higher current?

Yes, SI4427BDY-T1-E3 can be paralleled for higher current, but requires matched gate drive and symmetrical PCB layout to ensure current sharing. Its negative temperature coefficient of R_DS(on) promotes self-balancing, yet mismatched trace inductance or gate resistance may cause uneven switching. Vishay recommends individual gate resistors and Kelvin-source routing for each SI4427BDY-T1-E3 in parallel configurations-verified in Application Note AN826 for TrenchFET® devices.

SI4427BDY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 12.6A, 10V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4427BDY-T1-E3 FAQ

1.How can I place an order for SI4427BDY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4427BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4427BDY-T1-E3 reliable?

The price and inventory of SI4427BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4427BDY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4427BDY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4427BDY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4427BDY-T1-E3?

SI4427BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4427BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4427BDY-T1-E3?

For technical support, including SI4427BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4427BDY-T1-E3 requirements.

6.How does Aetrix verify that SI4427BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4427BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4427BDY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4427BDY-T1-E3?

All SI4427BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4427BDY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4427BDY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4427BDY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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