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Vishay Siliconix SI4427BDY-T1-GE3
- Part No.:
- SI4427BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4427BDY-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 9.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,579
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Product details
Overview
SI4427BDY-T1-GE3 from Vishay Siliconix is a P-channel 30-V TrenchFET® MOSFET in SO-8 package, delivering 12.6 A continuous drain current at TJ = 150 °C and RDS(on) of 0.0105 Ω at VGS = −10 V. It operates in high-side load switching and reverse polarity protection circuits with fast 20 ns rise time and integrated body diode.
For engineers reviewing the SI4427BDY-T1-GE3 datasheet, SI4427BDY-T1-GE3 pinout, SI4427BDY-T1-GE3 application, or SI4427BDY-T1-GE3 equivalent, key selection criteria include its −30 V VDS rating, low gate charge (47.2 nC typ), halogen-free compliance, thermal resistance (RthJA = 70 °C/W), and SO-8 footprint compatibility with industrial power management layouts.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low RDS(on) and fast switching with controlled Qgd (16.6 nC) for reduced Miller effect. Its negative VGS(th) range (−0.60 to −1.4 V) enables robust turn-on with standard logic-level gate drivers in high-side configurations.
The device integrates a source-drain diode with VSD = −0.8 to −1.2 V at IS = −2.5 A and exhibits safe operating area (SOA) limited by RDS(on) at low VDS and pulse current (IDM = −50 A) at high VDS - critical for transient surge handling in automotive and industrial DC feeds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V - supports 24 V nominal systems with 25 % headroom for transients |
| RDS(on) | 0.0105 Ω at VGS = −10 V - enables <0.3 W conduction loss at 5 A load |
| ID (cont) | −12.6 A at TA = 25 °C - suitable for medium-power load switches up to ~30 W |
| Qg | 47.2 nC typ - determines gate drive energy and switching speed in PWM control |
| RthJA | 70 °C/W steady-state - requires ≤25 °C ambient or heatsinking for full current at 150 °C junction |
| VGS(th) | −0.60 to −1.4 V - ensures reliable enhancement-mode turn-on with 3.3 V or 5 V microcontroller outputs |
| tr / tf | 15 / 110 ns - supports >1 MHz switching in synchronous buck or OR-ing applications |
Pinout & Package
SO-8 narrow-body surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm × 1.75 mm, lead (Pb)-free and halogen-free per IEC 61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally paralleled pins - provide low-inductance, high-current path to PCB ground plane or heat sink |
| 6 | Gate (G) | Control terminal - accepts −10 V to −12 V for full enhancement; sensitive to ESD (±12 V max) |
| Source (S) | Source (S) | Pin 6 is gate only; source connects externally via pins 1–5/7–8 drain terminals - device is source-referenced in high-side layout |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.0105 Ω RDS(on) at −10 V while maintaining rugged SOA for repetitive surge events |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for EU industrial and automotive end equipment |
| Low Qgd / Qgs ratio | 16.6 nC / 9.5 nC - reduces Miller plateau duration and improves controllability during hard-switching |
| Integrated body diode | VSD = −0.8 to −1.2 V at −2.5 A - supports reverse-current blocking and freewheeling in OR-ing and hot-swap circuits |
| SO-8 thermal performance | RthJF = 15 °C/W - allows direct thermal coupling to copper pour for passive cooling without external heatsink |
Applications
| Reverse Polarity Protection | High-Side Load Switch |
|---|---|
Use Scenario: Prevents damage from incorrect battery or power supply connection in 12–24 V portable and vehicle-mounted electronics. IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between input and system rail, turned on when polarity is correct. Use Value: Achieves <50 mV dropout at 10 A due to 0.0105 Ω RDS(on), eliminating need for Schottky diode and its 0.3–0.5 V forward drop. | Use Scenario: Enables/disables power to subsystems (e.g., sensors, displays) under MCU control in industrial PLCs and test equipment. IC Role / Device Role / Timing Role: High-side switch driven by GPIO with level-shifting or open-drain pull-up, providing clean ON/OFF control without ground interruption. Use Value: Fast 15 ns rise time and low gate charge allow sub-microsecond switching, minimizing inrush and enabling precise power sequencing. |
| OR-ing Controller Support | Hot-Swap Circuitry |
Use Scenario: Used in dual-redundant 12 V power supplies where two inputs feed one output bus with automatic failover. IC Role / Device Role / Timing Role: Acts as ideal diode replacement in discrete OR-ing implementation, with gate driven by comparator or dedicated controller. Use Value: Body diode forward voltage (−0.8 V) and low RDS(on) reduce conduction loss by >60 % versus Schottky diodes, improving efficiency and thermal margin. | Use Scenario: Controls inrush current during live insertion of boards into backplanes or modular enclosures with 24 V DC distribution. IC Role / Device Role / Timing Role: Gate-controlled high-side switch with soft-start via RC timing network or active gate driver. Use Value: Safe operating area supports 50 A pulsed current, allowing controlled ramp-up without thermal runaway during capacitor charging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PBF | RDS(on) = 0.012 Ω @ −10 V; SO-8; VDS = −30 V; Qg = 42 nC | Slightly higher RDS(on); lower Qg reduces gate drive loss but increases Miller sensitivity | Preferable where gate drive strength is limited and moderate conduction loss is acceptable |
| DMN3027LSD-13 | RDS(on) = 0.011 Ω @ −10 V; SO-8; VDS = −30 V; Qg = 52 nC; logic-level compatible | Higher Qg increases switching loss; identical VGS(th) range enables same driver compatibility | Better for designs requiring tighter VGS(th) distribution across temperature, but demands stronger gate driver |
Compared with IRF7425PBF and DMN3027LSD-13, SI4427BDY-T1-GE3 offers the lowest RDS(on) (0.0105 Ω) and balanced Qg (47.2 nC), making it optimal for high-efficiency, thermally constrained high-side switching where both conduction and switching losses must be minimized.
Availability
SI4427BDY-T1-GE3 is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, OR-ing circuits, and hot-swap applications requiring stable component supply and halogen-free compliance.
Supply support for SI4427BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The Si4427BDY product line delivers high-performance P-channel TrenchFET® MOSFETs optimized for low-loss, high-density power management in space-constrained 24 V systems - especially where reverse protection and high-side control are critical.
FAQ
What is the maximum continuous drain current for SI4427BDY-T1-GE3 at 70 °C ambient temperature?
The SI4427BDY-T1-GE3 supports −10.1 A continuous drain current at TA = 70 °C with proper PCB copper area. This derating reflects thermal limits imposed by its 70 °C/W junction-to-ambient resistance and 150 °C maximum junction temperature. The value assumes surface mounting on a 1" × 1" FR4 board per datasheet conditions - actual current capability depends on layout, airflow, and heatsinking. SI4427BDY-T1-GE3 must not exceed this limit without thermal validation.
Does SI4427BDY-T1-GE3 require a gate resistor for stability in high-side switching applications?
Yes, SI4427BDY-T1-GE3 benefits from an external gate resistor (typically 10–100 Ω) to dampen ringing caused by gate-drain capacitance (Qgd = 16.6 nC) and PCB inductance. Without it, fast edges can induce oscillation during turn-on/turn-off, risking shoot-through or EMI. The resistor also controls dV/dt and reduces ESD stress. SI4427BDY-T1-GE3 gate threshold is −0.60 to −1.4 V, so resistor value must preserve sufficient drive strength for full enhancement.
Can SI4427BDY-T1-GE3 be used in a synchronous rectifier configuration?
No, SI4427BDY-T1-GE3 is not designed for synchronous rectification. It is a P-channel enhancement-mode MOSFET intended for high-side switching, reverse protection, and load control - not low-side freewheeling where N-channel devices dominate. Its body diode has relatively high VSD (−0.8 to −1.2 V) and slow trr (70–110 ns), making it unsuitable for high-frequency rectification. SI4427BDY-T1-GE3 lacks the optimized body diode characteristics and gate drive timing required for synchronous buck or flyback secondary-side operation.
What is the safe operating area (SOA) limitation for SI4427BDY-T1-GE3 at DC operation?
At DC, the SI4427BDY-T1-GE3 SOA is limited by RDS(on) at low VDS and by maximum power dissipation (PD = 1.5 W at TA = 70 °C) at higher VDS. For example, at VDS = −5 V, maximum sustainable ID is ~0.3 A; at VDS = −20 V, ID must stay below ~0.075 A to avoid exceeding PD. These boundaries assume no heatsinking - the SOA curve in the datasheet (Fig. 14) must be consulted for pulse conditions. SI4427BDY-T1-GE3 must not operate outside the DC boundary line shown in its official SOA graph.
Is SI4427BDY-T1-GE3 pin-compatible with other SO-8 P-channel MOSFETs like Si4435DY?
No, SI4427BDY-T1-GE3 is not pin-compatible with Si4435DY. While both use SO-8 packages, Si4435DY has different pin assignments: pins 1–4 and 6–8 are drain, pin 5 is source, and pin 6 is gate - whereas SI4427BDY-T1-GE3 assigns pins 1–5 and 7–8 as drain, pin 6 as gate, and source referenced externally. Swapping them would short gate-to-drain. SI4427BDY-T1-GE3 pinout is fixed per its top-view diagram - always verify layout against the exact part's mechanical drawing before design-in.
SI4427BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 10.5mOhm @ 12.6A, 10V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4427BDY-T1-GE3 FAQ
1.How can I place an order for SI4427BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4427BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4427BDY-T1-GE3 reliable?
The price and inventory of SI4427BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4427BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4427BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4427BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4427BDY-T1-GE3?
SI4427BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4427BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4427BDY-T1-GE3?
For technical support, including SI4427BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4427BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4427BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4427BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4427BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4427BDY-T1-GE3?
All SI4427BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4427BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4427BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4427BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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