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Vishay Siliconix SI4430BDY-T1-GE3
- Part No.:
- SI4430BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4430BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,126
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Product details
Overview
SI4430BDY-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, delivering 20 A continuous drain current at 150 °C junction temperature, 4.5 mΩ RDS(on) at VGS = 10 V, and 24 nC total gate charge - used in high-efficiency DC-DC synchronous buck converters and motor drive half-bridges.
For engineers reviewing the SI4430BDY-T1-GE3 datasheet, SI4430BDY-T1-GE3 pinout, SI4430BDY-T1-GE3 application, or SI4430BDY-T1-GE3 equivalent, key selection criteria include its 30-V VDS, low RDS(on) at 4.5 V gate drive, SO-8 thermal performance (RthJA = 67 °C/W), and integrated body diode with 35 ns reverse recovery time.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-frequency power conversion. Its gate threshold voltage (1.0–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the 0.5–1.7 Ω gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.
The device integrates a robust intrinsic body diode rated for 2.7 A continuous source current and 40 A avalanche current (L = 0.1 mH), supporting freewheeling operation in inductive loads. Thermal design leverages the SO-8 package's 15 °C/W typical junction-to-foot resistance for enhanced heat transfer to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage suitable for 24 V nominal bus systems with transient margin |
| RDS(on) | 4.5 mΩ at VGS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-current POL regulators |
| ID (continuous) | 20 A at TJ = 150 °C - Supports sustained high-current operation on standard FR4 with 1" × 1" copper pad |
| Qg | 24 nC (typ.) - Low gate charge reduces driver power demand and switching losses in 500 kHz+ converters |
| VGS(th) | 1.0–3.0 V - Ensures reliable enhancement-mode turn-on with standard microcontroller GPIOs |
| tr/tf | 14/18 ns (typ.) - Fast edge rates minimize overlap loss in synchronous rectification topologies |
| VSD | 0.72–1.1 V - Low forward voltage of integrated body diode improves light-load efficiency in buck converters |
Pinout & Package
SO-8 (narrow-body, JEDEC MS-012), surface-mount package with exposed drain paddle thermally connected to pins 1, 2, 3, and 4. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Common high-current output node; electrically and thermally tied to exposed paddle for low-inductance, high-power routing |
| 5 | Gate (G) | Control input requiring ≤100 nA leakage; sensitive to ESD; drives 24 nC gate capacitance |
| 6, 7, 8 | Source (S) | Power return path and reference for gate drive; connects to ground plane or low-side switch node |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency switching efficiency |
| 100 % Rg tested | Guarantees gate resistance between 0.5–1.7 Ω, enabling predictable switching timing without characterization per unit |
| Halogen-free construction | Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment |
| SO-8 thermal footprint | Enables >1.6 W steady-state power dissipation on standard PCBs using JEDEC-recommended 6.25 mm × 4.37 mm copper pads |
| Avalanche-rated (EAS = 80 mJ) | Withstands repetitive inductive switching stress without derating, eliminating need for external snubbers in motor control |
Applications
| DC-DC Synchronous Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency point-of-load regulator converting 24 V input to 5 V/15 A output for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, operating at 300–500 kHz with 100 % duty-cycle capability during light load. Use Value: 4.5 mΩ RDS(on) cuts conduction loss by 40 % vs. comparable 6.5 mΩ devices, improving full-load efficiency from 92 % to 94.5 %. | Use Scenario: H-bridge driver for 12–24 V brushed motors in automated gate actuators, requiring bidirectional control and regenerative braking. IC Role / Device Role / Timing Role: High-current quadrant-switching element handling peak currents up to 40 A during stall conditions. Use Value: 40 A pulsed drain rating and 80 mJ single-pulse avalanche energy eliminate external flyback diodes and suppress voltage spikes during abrupt current interruption. |
| Hot-Swap Controller | USB-C Power Delivery Sink |
Use Scenario: Inrush current limiter in 24 V backplane hot-swap circuits protecting downstream FPGA and memory subsystems. IC Role / Device Role / Timing Role: Linear-mode controlled pass element during startup, transitioning to low-RDS(on) conduction after soft-start. Use Value: Tight VGS(th) distribution (1.0–3.0 V) ensures consistent turn-on threshold across temperature, enabling precise inrush regulation without feedback loop instability. | Use Scenario: Load switch in USB-C PD 3.0 compliant portable monitors accepting up to 20 V/5 A input. IC Role / Device Role / Timing Role: Input protection FET placed between connector and internal buck converter, controlled by PD controller GPIO. Use Value: 30 V VDS headroom accommodates 20 V PD max + 30 % overshoot; 2.7 A body diode supports dead-time conduction during PD negotiation transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 5.2 mΩ @ 10 V; Qg = 27 nC; SO-8 package | Slightly higher conduction and switching loss; lower avalanche rating (EAS = 52 mJ) | Acceptable where 10–15 % higher power loss is tolerable and avalanche stress is minimal |
| DMN3020LSD-13 | RDS(on) = 4.0 mΩ @ 10 V; Qg = 22 nC; same SO-8 footprint but dual-N configuration | Requires circuit redesign to use only one channel; no integrated body diode rating published | Preferred for new designs needing lowest RDS(on), but not drop-in due to dual-channel pinout and missing avalanche data |
Compared with IRF7470PBF and DMN3020LSD-13, the SI4430BDY-T1-GE3 offers the best balance of low RDS(on), verified avalanche ruggedness, and documented body diode performance - making it optimal for inductive load switching where reliability under transient stress is critical.
Availability
SI4430BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, hot-swap controllers, and USB-C power delivery systems requiring stable component supply, halogen-free compliance, and proven thermal performance in SO-8 packages.
Supply support for SI4430BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The Si4430BDY-T1-GE3 belongs to Vishay's TrenchFET® Gen II family, engineered specifically for high-current, high-frequency power conversion where low RDS(on) × Qg and robust avalanche capability are essential.
FAQ
What is the maximum continuous drain current rating for SI4430BDY-T1-GE3 at 70 °C ambient?
The SI4430BDY-T1-GE3 supports 16 A continuous drain current at TA = 70 °C when mounted on a 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This value assumes no forced airflow and accounts for thermal resistance RthJA = 67 °C/W in steady-state conditions. Derating curves confirm linear reduction from 20 A at 25 °C to 16 A at 70 °C ambient.
Does SI4430BDY-T1-GE3 have a specified body diode reverse recovery time?
Yes, the SI4430BDY-T1-GE3 datasheet specifies trr = 35–50 ns and Qrr = 32–50 nC under test conditions of IF = 2.7 A and dI/dt = 100 A/µs. These values are measured with VGS = 0 V and are critical for evaluating commutation loss in synchronous rectifiers and H-bridge topologies.
Is SI4430BDY-T1-GE3 suitable for logic-level gate drive from a 3.3 V microcontroller?
Yes - the SI4430BDY-T1-GE3 has a gate threshold voltage range of 1.0–3.0 V and delivers 17 A drain current at VGS = 4.5 V with RDS(on) = 6.0 mΩ. While full 20 A performance requires 10 V drive, it operates efficiently as a logic-level switch at 3.3 V in low-duty-cycle or low-current applications, confirmed by transfer characteristic curves.
What is the thermal resistance from junction to foot (RthJF) for SI4430BDY-T1-GE3?
The SI4430BDY-T1-GE3 has a typical junction-to-foot thermal resistance of 15 °C/W and a maximum of 19 °C/W under steady-state conditions. This parameter reflects heat flow from the die directly into the exposed drain paddle and is essential for estimating temperature rise when the device is soldered to a large copper area or heatsink.
How does the halogen-free status of SI4430BDY-T1-GE3 impact its compliance profile?
The SI4430BDY-T1-GE3 meets IEC 61249-2-21 for halogen-free printed wiring board materials, meaning bromine and chlorine content are each below 900 ppm and total halogens are below 1500 ppm. This satisfies strict environmental requirements for industrial and medical equipment without compromising electrical or thermal performance versus non-halogen-free variants.
SI4430BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4430BDY-T1-GE3 FAQ
1.How can I place an order for SI4430BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4430BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4430BDY-T1-GE3 reliable?
The price and inventory of SI4430BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4430BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4430BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4430BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4430BDY-T1-GE3?
SI4430BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4430BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4430BDY-T1-GE3?
For technical support, including SI4430BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4430BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4430BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4430BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4430BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4430BDY-T1-GE3?
All SI4430BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4430BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4430BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4430BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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