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Vishay Siliconix SI4431BDY-T1-GE3
- Part No.:
- SI4431BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4431BDY-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 5.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,593
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Product details
Overview
SI4431BDY-T1-GE3 from Vishay Siliconix is a P-channel 30-V TrenchFET® Power MOSFET in SO-8 package, rated for -7.5 A continuous drain current at 25 °C, with RDS(on) = 0.030 Ω at VGS = -10 V and 0.050 Ω at VGS = -4.5 V. It serves as a high-efficiency load switch or reverse-polarity protection device in DC power rails of industrial control modules and USB-powered peripherals.
For engineers reviewing the SI4431BDY-T1-GE3 datasheet, SI4431BDY-T1-GE3 pinout, SI4431BDY-T1-GE3 application, or SI4431BDY-T1-GE3 equivalent, key selection criteria include verified gate threshold voltage (-1.0 to -3.0 V), guaranteed low RDS(on) at logic-level drive, thermal resistance (RthJA = 70 °C/W steady-state), and Pb-free/halogen-free compliance per IEC 61249-2-21.
Technical Context
This MOSFET operates in enhancement-mode with negative gate control, requiring VGS ≤ -1.0 V to initiate conduction and full turn-on at VGS = -10 V. Its body diode supports source-to-drain freewheeling with VSD = -0.78 to -1.1 V at -2.1 A, enabling use in synchronous rectification or back-to-back switching configurations.
The device features trench-based silicon architecture optimized for low gate charge (Qg = 13–20 nC) and fast switching (td(on) = 10–20 ns, tf = 47–70 ns), making it suitable for high-frequency DC-DC converter high-side switches where gate drive loss and transition time are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 24 V rail protection and reverse-battery applications |
| RDS(on) @ VGS = -10 V | 0.030 Ω - Enables <150 mW conduction loss at 7.5 A, reducing thermal stress on PCB |
| RDS(on) @ VGS = -4.5 V | 0.050 Ω - Ensures reliable operation with 5 V or 3.3 V logic-level gate drivers |
| ID (continuous, TA = 25 °C) | -7.5 A - Supports medium-power loads such as solenoids, LED arrays, and motor drivers |
| Qg | 13–20 nC - Low gate charge minimizes driver power consumption and enables >1 MHz switching |
| VGS(th) | -1.0 to -3.0 V - Tight threshold range ensures predictable turn-on across temperature and process variation |
| RthJA (steady-state) | 70 °C/W - Requires minimal copper area (1" × 1" FR4) for thermal management in space-constrained designs |
Pinout & Package
SO-8 narrow-body surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with gull-wing leads. Thermal pad on exposed die attach area not present - standard SOIC layout applies.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Source (S) | Internally paralleled pins reduce source inductance and improve current sharing in high-di/dt switching |
| 6, 7, 8 | Drain (D) | Three-pin drain connection provides low-inductance path to ground plane or heatsink |
| 3 | Gate (G) | Single gate input with ±20 V maximum rating - compatible with standard logic-level drivers and isolated gate supplies |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for reduced switching + conduction losses |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU without compromising thermal performance |
| Logic-level gate drive | Full enhancement at VGS = -4.5 V enables direct interface with microcontroller GPIOs and 5 V PMICs |
| Low gate charge | Qg = 13–20 nC reduces gate driver power dissipation and simplifies driver IC selection |
| Enhanced safe operating area | Rated for -30 A pulsed drain current (IDM) and robust avalanche energy handling per design validation |
Applications
| Reverse Polarity Protection | Hot-Swap Controller |
|---|---|
Use Scenario: Prevents damage to downstream circuitry when a 12–24 V DC supply is connected with incorrect polarity in industrial field devices. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by resistor-divider or dedicated controller. Use Value: RDS(on) = 0.050 Ω at -4.5 V ensures <200 mW loss at 2 A, eliminating need for bulky Schottky diodes. | Use Scenario: Enables safe insertion/removal of powered boards into backplane systems without disrupting system voltage rails. IC Role / Device Role / Timing Role: High-side load switch controlled by hot-swap controller IC (e.g., LTC4215) to limit inrush current. Use Value: Verified -7.5 A continuous rating and low Qg allow precise current limiting and fast fault response (<100 ns fall time). |
| USB-C Power Delivery Switch | DC-DC Converter Synchronous Rectifier |
Use Scenario: Isolates VBUS path in USB-C receptacles supporting 20 V/3 A PD profiles while maintaining low forward drop. IC Role / Device Role / Timing Role: Bidirectional P-channel switch placed between connector and PD controller's VBUS line. Use Value: VGS(th) range (-1.0 to -3.0 V) ensures stable turn-on during dynamic VBUS ramp-up and avoids shoot-through. | Use Scenario: Replaces Schottky diode in buck converter secondary side to improve efficiency in 5–12 V output stages. IC Role / Device Role / Timing Role: Synchronous rectifier driven by gate driver referenced to source node, leveraging body diode conduction for timing alignment. Use Value: VSD = -0.78 to -1.1 V and fast trr (45–80 ns) minimize reverse recovery loss and enable >500 kHz operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7413PbF | RDS(on) = 0.032 Ω @ -10 V; Qg = 22 nC; SO-8 package | Slightly higher gate charge increases driver loss; identical thermal footprint | Prefer SI4431BDY-T1-GE3 for lower Qg in high-frequency switching; IRF7413PbF acceptable for <200 kHz applications |
| DMN3026LFG-7 | RDS(on) = 0.035 Ω @ -10 V; VGS(th) = -1.2 to -2.4 V; SOT-23-6 package | Smaller SOT-23-6 limits power dissipation to ≤1.5 W; unsuitable for >3 A continuous loads | Select SI4431BDY-T1-GE3 for ≥5 A loads and SO-8 thermal reliability; DMN3026LFG-7 only for space-constrained sub-3 A circuits |
Compared with IRF7413PbF and DMN3026LFG-7, the SI4431BDY-T1-GE3 offers the lowest Qg/RDS(on) ratio in SO-8, enabling superior efficiency in 300–1000 kHz DC-DC topologies while maintaining compatibility with legacy SO-8 PCB layouts and thermal management practices.
Availability
SI4431BDY-T1-GE3 is available at Aetrix Electronics and suitable for industrial power management, USB-C peripheral protection, and embedded DC-DC converter designs requiring stable component supply and long-term manufacturability.
Supply support for SI4431BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SI4431BDY-T1-GE3 belongs to Vishay's TrenchFET® Gen II P-channel MOSFET family, engineered for low RDS(on) and fast switching in compact surface-mount packages targeting power efficiency-critical DC power distribution and protection applications.
FAQ
What is the maximum continuous drain current rating for SI4431BDY-T1-GE3 at 70 °C ambient temperature?
The SI4431BDY-T1-GE3 supports -4.6 A continuous drain current at TA = 70 °C under standard mounting conditions (1" × 1" FR4 board). This derating reflects its thermal resistance of 70 °C/W and maximum junction temperature of 150 °C. Designers must verify PCB copper area and airflow to maintain this rating in actual systems. The SI4431BDY-T1-GE3 datasheet specifies this value in the Absolute Maximum Ratings table.
Does SI4431BDY-T1-GE3 support logic-level gate drive from a 3.3 V microcontroller?
Yes, the SI4431BDY-T1-GE3 is fully characterized for operation at VGS = -4.5 V, delivering RDS(on) = 0.050 Ω at -5.8 A. While a 3.3 V controller cannot directly produce -4.5 V, it can drive the SI4431BDY-T1-GE3 via an inverting level shifter or charge pump. The SI4431BDY-T1-GE3 gate threshold range (-1.0 to -3.0 V) ensures predictable turn-on even with marginal negative bias.
What is the safe operating area (SOA) limitation for SI4431BDY-T1-GE3 in single-pulse conditions?
The SI4431BDY-T1-GE3 SOA curve shows it can sustain -30 A pulsed drain current at VDS = -10 V for ≤100 µs, limited by peak junction temperature rise. At VDS = -30 V, the maximum pulse current drops to -10 A. These boundaries are defined in the datasheet Figure 13 and assume TJ ≤ 150 °C. The SI4431BDY-T1-GE3 SOA is validated for repetitive pulses up to 2% duty cycle.
Is SI4431BDY-T1-GE3 suitable for reverse battery protection in automotive 12 V systems?
Yes, the SI4431BDY-T1-GE3 is rated for VDS = -30 V and operates reliably across -40 to +125 °C junction temperature. Its -7.5 A continuous rating at 25 °C and low RDS(on) minimize voltage drop and heat generation during normal operation. Transient clamping must be handled externally, as the SI4431BDY-T1-GE3 does not integrate avalanche ruggedness beyond its specified SOA.
How does the thermal resistance of SI4431BDY-T1-GE3 compare between junction-to-ambient and junction-to-foot?
The SI4431BDY-T1-GE3 has RthJA = 70 °C/W (steady-state) and RthJF = 22 °C/W (junction-to-foot). The lower RthJF indicates efficient heat transfer from die to leadframe, but effective cooling requires soldering pins 1–5 (source) and 6–8 (drain) to adequate copper planes. The SI4431BDY-T1-GE3 thermal performance is optimized for standard SO-8 PCB layouts per Application Note 826.
SI4431BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4431BDY-T1-GE3 FAQ
1.How can I place an order for SI4431BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4431BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4431BDY-T1-GE3 reliable?
The price and inventory of SI4431BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4431BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4431BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4431BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4431BDY-T1-GE3?
SI4431BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4431BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4431BDY-T1-GE3?
For technical support, including SI4431BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4431BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4431BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4431BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4431BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4431BDY-T1-GE3?
All SI4431BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4431BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4431BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4431BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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