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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4431CDY-T1-E3

Name: SI4431CDY-T1-E3
Brand: Vishay Siliconix
SKU: SI4431CDY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4431CDY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4431CDY-T1-E3.pdf

Description:: MOSFET P-CH 30V 9A 8SO

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Product details

Overview

SI4431CDY-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load and battery switching in space-constrained DC systems. It features -30 V V_DS, 0.032 Ω R_DS(on) at V_GS = -10 V, 13 nC typical Q_g, -9 A continuous drain current (T_C = 25 °C), and SO-8 package - enabling compact, low-loss power path control in portable and industrial power management.

For engineers reviewing the SI4431CDY-T1-E3 datasheet, SI4431CDY-T1-E3 pinout, SI4431CDY-T1-E3 application, or SI4431CDY-T1-E3 equivalent, key selection criteria include verified P-channel SO-8 thermal performance (R_thJA ≤ 50 °C/W), gate drive compatibility with 4.5 V logic-level control, and body diode recovery (t_rr = 22–33 ns) for synchronous buck or reverse-polarity protection circuits.

Technical Context

This device operates as a single P-channel MOSFET with trench-based silicon architecture optimized for low conduction loss and fast switching. Its gate threshold voltage (V_GS(th) = -1 to -2.5 V) ensures reliable turn-on with standard 5 V or 3.3 V microcontroller outputs, while its 100% R_g testing guarantees consistent gate resistance (0.4–4 Ω) for predictable switching timing.

The SO-8 package supports surface-mount assembly on FR4 boards and delivers junction-to-foot thermal resistance of 24–30 °C/W, enabling stable operation up to T_J = 150 °C under controlled PCB copper area. Its body diode exhibits V_SD = -0.71 to -1.2 V at I_S = -5.6 A and Q_rr = 17–26 nC, supporting moderate-frequency freewheeling in DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 24 V rail protection and reverse-battery applications
R_DS(on) @ V_GS = -10 V	0.032 Ω - Enables <150 mW conduction loss at 7 A, suitable for high-current load switches
R_DS(on) @ V_GS = -4.5 V	0.049 Ω - Confirmed operation with 3.3 V logic-level gate drive without external level shifting
Q_g typ.	13 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in optimized layouts
I_D continuous (T_C = 25 °C)	-9 A - Sustained current capability with minimal heatsinking on 1" × 1" FR4 board
t_rr (body diode)	22–33 ns - Supports efficient freewheeling in synchronous buck topologies up to ~500 kHz
R_thJA max.	50 °C/W - Thermal limit defines minimum PCB copper area required for ambient temperature derating

Pinout & Package

SI4431CDY-T1-E3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads for enhanced thermal performance. The package measures 4.9 mm × 3.9 mm × 1.55 mm (D × E × A) and complies with JEDEC MS-012 outline.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D), Source (S), Gate (G)	Pins 1–3 and 8 are Source; Pin 4 is Gate; Pins 5–7 are Drain - dual-source/dual-drain configuration maximizes current handling and thermal spreading in SO-8 footprint

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) per die area than planar MOSFETs, improving power density in SO-8
100% R_g tested	Ensures gate resistance between 0.4–4 Ω, critical for consistent td(on)/td(off) in timing-sensitive load switches
Low V_GS(th) range (-1 to -2.5 V)	Guarantees full enhancement with 3.3 V or 5 V MCU GPIO, eliminating need for gate drivers in many applications
Optimized body diode Q_rr (17–26 nC)	Reduces switching loss and voltage overshoot during diode commutation in DC-DC stages
Lead (Pb)-free and halogen-free	Meets RoHS 2011/65/EU and Vishay's material compliance standard (doc# 99912)

Applications

Battery Reverse-Polarity Protection	Hot-Swap Load Switch
Use Scenario: Prevents damage when Li-ion battery packs are inserted backward into portable medical devices or handheld test equipment. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by resistor-divider from battery voltage - no active controller needed. Use Value: Achieves <100 mΩ total path resistance (including PCB traces), limiting reverse-current power dissipation to <1 W at 3 A fault current.	Use Scenario: Enables safe insertion/removal of peripheral modules (e.g., sensor add-ons) in industrial PLC backplanes without system shutdown. IC Role / Device Role / Timing Role: High-side load switch controlled by FPGA I/O with soft-start via RC gate network to limit inrush dv/dt. Use Value: Delivers controlled 50 ms turn-on with <500 mA inrush peak, avoiding bus voltage droop and false resets in 5 V/3.3 V subsystems.
USB-C Port Power Path Control	Industrial 24 V DC Power Distribution
Use Scenario: Manages VBUS path directionality and overcurrent isolation in USB-C receptacles supporting dual-role power (DRP). IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (one device per direction) with gate tied to CC logic - SI4431CDY-T1-E3 handles sink-side path. Use Value: With R_DS(on) = 0.049 Ω @ -4.5 V, maintains <250 mV drop at 5 A, staying within USB-C 5 V ±5% specification margin.	Use Scenario: Provides individual branch enable/disable for 24 V solenoid, relay, and LED driver zones in factory automation I/O modules. IC Role / Device Role / Timing Role: High-side switch driven by isolated 24 V logic signal via optocoupler and level-shifting transistor stage. Use Value: Supports continuous 7.2 A at T_C = 70 °C with <2.7 W power dissipation, allowing direct mounting on metal chassis without additional heatsink.

Battery Reverse-Polarity Protection

Hot-Swap Load Switch

Use Scenario: Prevents damage when Li-ion battery packs are inserted backward into portable medical devices or handheld test equipment.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by resistor-divider from battery voltage - no active controller needed.

Use Value: Achieves <100 mΩ total path resistance (including PCB traces), limiting reverse-current power dissipation to <1 W at 3 A fault current.

Use Scenario: Enables safe insertion/removal of peripheral modules (e.g., sensor add-ons) in industrial PLC backplanes without system shutdown.

IC Role / Device Role / Timing Role: High-side load switch controlled by FPGA I/O with soft-start via RC gate network to limit inrush dv/dt.

Use Value: Delivers controlled 50 ms turn-on with <500 mA inrush peak, avoiding bus voltage droop and false resets in 5 V/3.3 V subsystems.

USB-C Port Power Path Control

Industrial 24 V DC Power Distribution

Use Scenario: Manages VBUS path directionality and overcurrent isolation in USB-C receptacles supporting dual-role power (DRP).

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (one device per direction) with gate tied to CC logic - SI4431CDY-T1-E3 handles sink-side path.

Use Value: With R_DS(on) = 0.049 Ω @ -4.5 V, maintains <250 mV drop at 5 A, staying within USB-C 5 V ±5% specification margin.

Use Scenario: Provides individual branch enable/disable for 24 V solenoid, relay, and LED driver zones in factory automation I/O modules.

IC Role / Device Role / Timing Role: High-side switch driven by isolated 24 V logic signal via optocoupler and level-shifting transistor stage.

Use Value: Supports continuous 7.2 A at T_C = 70 °C with <2.7 W power dissipation, allowing direct mounting on metal chassis without additional heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PBF	R_DS(on) = 0.042 Ω @ -10 V; Q_g = 16 nC; SO-8 but non-RoHS-compliant lead finish	Higher gate charge increases driver losses; lacks halogen-free certification	Prefer SI4431CDY-T1-E3 for new designs requiring RoHS/halogen-free compliance and lower Q_g.
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; Q_g = 11 nC; SOT-23-6 package (lower power, smaller footprint)	Lower I_D rating (-4.2 A) and higher R_thJA (~120 °C/W) limit use to sub-2 A loads	Select DMG2305UVT-7 only for space-constrained, low-current (<2 A) applications where SO-8 is prohibitive.

Compared with IRF7425PBF and DMG2305UVT-7, SI4431CDY-T1-E3 offers the best balance of low R_DS(on) at logic-level drive, industry-standard SO-8 thermal performance, and full environmental compliance - making it optimal for mid-power industrial and portable load switching where reliability and regulatory alignment are critical.

Availability

SI4431CDY-T1-E3 is available at Aetrix Electronics and suitable for battery protection, hot-swap load switching, and 24 V DC power distribution requiring stable component supply across production lifecycles.

Supply support for SI4431CDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, thermally robust packaging and trench-based silicon process technology.

The SI4431CDY-T1-E3 belongs to Vishay's TrenchFET® Gen II P-channel MOSFET family, engineered specifically for high-efficiency, low-voltage load switching in automotive, industrial, and portable power systems where logic-level gate drive and thermal stability are essential.

FAQ

What is the maximum continuous drain current for SI4431CDY-T1-E3 at 70 °C case temperature?

The SI4431CDY-T1-E3 supports -7.2 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and ambient conditions in the final design.

Does SI4431CDY-T1-E3 require a gate driver when used with a 3.3 V microcontroller?

No, SI4431CDY-T1-E3 does not require an external gate driver with a 3.3 V microcontroller. Its V_GS(th) range of -1 to -2.5 V and R_DS(on) = 0.049 Ω at V_GS = -4.5 V ensure full enhancement and low conduction loss using direct GPIO connection - confirmed in the datasheet's specifications at V_GS = -4.5 V.

What is the body diode forward voltage of SI4431CDY-T1-E3 at -5.6 A source current?

The body diode forward voltage (V_SD) of SI4431CDY-T1-E3 is -0.71 to -1.2 V at I_S = -5.6 A and V_GS = 0 V, as measured per the Drain-Source Body Diode Characteristics table. This voltage impacts freewheeling efficiency and reverse-recovery behavior in buck or flyback topologies.

Can SI4431CDY-T1-E3 be used in parallel with another SI4431CDY-T1-E3 for higher current handling?

Yes, SI4431CDY-T1-E3 can be paralleled, but requires careful attention to gate drive matching and current-sharing resistors. Its negative temperature coefficient of R_DS(on) promotes inherent current sharing, yet layout symmetry and individual gate resistors (e.g., 1–5 Ω) are recommended to prevent oscillation and ensure balanced dynamic loading.

Is SI4431CDY-T1-E3 suitable for reverse-battery protection in automotive infotainment systems?

SI4431CDY-T1-E3 is suitable for reverse-battery protection in 12 V automotive infotainment systems, provided transient clamping (e.g., TVS) protects against load-dump spikes. Its -30 V V_DS rating covers nominal 12 V systems with margin, and its SO-8 thermal profile supports operation up to 150 °C junction temperature under defined PCB copper area.

SI4431CDY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1006 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 4.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4431CDY-T1-E3 FAQ

1.How can I place an order for SI4431CDY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4431CDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4431CDY-T1-E3 reliable?

The price and inventory of SI4431CDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4431CDY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4431CDY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4431CDY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4431CDY-T1-E3?

SI4431CDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4431CDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4431CDY-T1-E3?

For technical support, including SI4431CDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4431CDY-T1-E3 requirements.

6.How does Aetrix verify that SI4431CDY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4431CDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4431CDY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4431CDY-T1-E3?

All SI4431CDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4431CDY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4431CDY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4431CDY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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