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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4434ADY-T1-GE3

Name: SI4434ADY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4434ADY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4434ADY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4434ADY-T1-GE3.pdf

Description:: MOSFET N-CH 250V 2.8A/4.1A 8SO

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Product details

Overview

SI4434ADY-T1-GE3 from Vishay Siliconix is a 250 V, 4.1 A N-channel enhancement-mode MOSFET in SO-8 package, featuring R_DS(on) = 0.150 Ω at V_GS = 10 V, Q_g = 8.6 nC (at 7.5 V), and 100% R_g tested. It serves as a high-voltage load switch or synchronous rectifier in DC/DC and boost converters.

For engineers reviewing the SI4434ADY-T1-GE3 datasheet, SI4434ADY-T1-GE3 pinout, SI4434ADY-T1-GE3 application, or SI4434ADY-T1-GE3 equivalent, key selection criteria include its 250 V V_DS, low gate charge for fast switching, SO-8 thermal performance (R_thJA = 43 °C/W max), and body diode recovery characteristics (t_rr = 100–150 ns).

Technical Context

This ThunderFET® device uses planar trench-gate silicon technology optimized for high-voltage switching with controlled dv/dt and low EMI. Its gate threshold voltage (V_GS(th) = 2–4 V) enables compatibility with standard 5 V and 3.3 V logic-level drivers.

The SO-8 package integrates four drain terminals (pins 5–8) and three source terminals (pins 1–3), enabling low-inductance, high-current routing. Body diode parameters-including V_SD = 0.8–1.2 V and Q_rr = 356–550 nC-are specified for synchronous rectification and flyback operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports input rails up to 200 V DC in isolated DC/DC converters without derating.
R_DS(on) max @ 10 V	0.150 Ω - limits conduction loss to ≤0.87 W at 2.8 A continuous drain current.
Q_g typ @ 7.5 V	8.6 nC - enables <30 ns turn-on delay with 1 Ω gate driver, suitable for 500 kHz+ switching.
I_D continuous @ T_C = 25 °C	4.1 A - defines maximum steady-state current with heatsink; derates to 2.3 A at T_C = 70 °C.
t_rr & Q_rr	100–150 ns / 356–550 nC - determines reverse recovery loss and snubber sizing in hard-switched topologies.
R_thJA max	43 °C/W - sets minimum PCB copper area (1" × 1" FR4) needed to maintain T_J ≤ 150 °C at 2.9 W.

Pinout & Package

SO-8 (Narrow) package per JEDEC MS-012; 1.27 mm pitch; 4.8–5.0 mm width (D); 3.8–4.0 mm length (E); 1.35–1.75 mm height (A). Four drain pins (5–8) and three source pins (1–3) support parallel routing and thermal spreading.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Common source node; low-inductance connection point for return path and Kelvin sensing.
4	Gate (G)	Control input; requires <2.3 Ω gate resistance (R_g) to limit ringing per datasheet test condition.
5, 6, 7, 8	Drain (D)	High-side switching node; paralleled pins reduce package inductance and improve current sharing.

Key Features

Feature	Design Value
ThunderFET® construction	Optimized for high-voltage avalanche ruggedness (E_AS = 7.2 mJ) and stable R_DS(on) over temperature.
100% R_g tested	Ensures gate resistance falls within 0.5–4.6 Ω range, critical for predictable switching timing and EMI control.
Low Q_gd/Q_gs ratio	Q_gd = 2.9 nC, Q_gs = 2.7 nC - minimizes Miller plateau duration and improves hard-switching robustness.
Enhanced body diode	V_SD = 0.8–1.2 V at 2.3 A - reduces forward loss in asynchronous buck or flyback freewheeling paths.

Applications

DC/DC Converters	LED Backlighting
Use Scenario: Primary-side switch in isolated 24–48 V input DC/DC modules delivering 12 V/3 A output. IC Role / Device Role / Timing Role: High-side power switch operating at 250 kHz with 50% duty cycle. Use Value: 250 V rating avoids derating margin issues; low Q_g enables efficient ZVS-assisted soft switching.	Use Scenario: Boost converter driving 40 V LED strings from 12 V automotive supply. IC Role / Device Role / Timing Role: Synchronous rectifier in boost output stage, replacing Schottky diode. Use Value: R_DS(on) = 0.150 Ω cuts conduction loss by >40% vs. 0.5 V Schottky at 2 A, improving efficiency by ~1.2%.
PD Switch	Load Switch
Use Scenario: Power delivery switch in USB-C PD 3.0 sink applications requiring 20 V/3 A capability. IC Role / Device Role / Timing Role: Inrush-limited hot-swap FET controlling 20 V rail to downstream controller. Use Value: V_GS(th) = 2–4 V ensures reliable turn-on with 3.3 V GPIO; 250 V rating provides surge margin against 100 V transients.	Use Scenario: System-level load switch isolating 24 V industrial I/O module from main supply during fault conditions. IC Role / Device Role / Timing Role: Low-impedance ON-state switch with fast turn-off (<35 ns fall time) for fault response. Use Value: t_f = 22–50 ns and I_DM = 25 A enable sub-100 μs fault clearing before thermal damage occurs.

DC/DC Converters

LED Backlighting

Use Scenario: Primary-side switch in isolated 24–48 V input DC/DC modules delivering 12 V/3 A output.

IC Role / Device Role / Timing Role: High-side power switch operating at 250 kHz with 50% duty cycle.

Use Value: 250 V rating avoids derating margin issues; low Q_g enables efficient ZVS-assisted soft switching.

Use Scenario: Boost converter driving 40 V LED strings from 12 V automotive supply.

IC Role / Device Role / Timing Role: Synchronous rectifier in boost output stage, replacing Schottky diode.

Use Value: R_DS(on) = 0.150 Ω cuts conduction loss by >40% vs. 0.5 V Schottky at 2 A, improving efficiency by ~1.2%.

PD Switch

Load Switch

Use Scenario: Power delivery switch in USB-C PD 3.0 sink applications requiring 20 V/3 A capability.

IC Role / Device Role / Timing Role: Inrush-limited hot-swap FET controlling 20 V rail to downstream controller.

Use Value: V_GS(th) = 2–4 V ensures reliable turn-on with 3.3 V GPIO; 250 V rating provides surge margin against 100 V transients.

Use Scenario: System-level load switch isolating 24 V industrial I/O module from main supply during fault conditions.

IC Role / Device Role / Timing Role: Low-impedance ON-state switch with fast turn-off (<35 ns fall time) for fault response.

Use Value: t_f = 22–50 ns and I_DM = 25 A enable sub-100 μs fault clearing before thermal damage occurs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP250N6F6	60 V V_DS, 250 A I_D, TO-220 package; lower R_DS(on) (2.2 mΩ) but incompatible voltage rating.	Not suitable for 200 V bus applications; limited to ≤60 V systems like 48 V telecom.	Select only when system V_IN ≤ 48 V and higher current capacity is required.
IRF640NPBF	200 V V_DS, 18 A I_D, TO-220; R_DS(on) = 0.18 Ω @ 10 V, Q_g = 63 nC - significantly slower switching.	Higher switching loss limits use to ≤100 kHz; unsuitable for high-frequency LED boost or PD switching.	Prefer for cost-sensitive, low-frequency linear-regulator replacement where speed is not critical.

Compared with STP250N6F6 and IRF640NPBF, SI4434ADY-T1-GE3 uniquely balances 250 V capability, SO-8 surface-mount compatibility, and low Q_g-enabling compact, high-efficiency designs in 100–200 V DC/DC and PD applications where voltage margin and thermal density matter.

Availability

SI4434ADY-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, LED backlighting, and industrial load switching requiring stable component supply and lead(Pb)-free/halogen-free compliance.

Supply support for SI4434ADY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and parametric consistency.

The SI4434ADY-T1-GE3 belongs to Vishay's ThunderFET® high-voltage MOSFET family, engineered for robust switching in industrial power supplies, lighting, and power delivery where 200–250 V operation and SO-8 thermal performance are critical.

FAQ

What is the maximum continuous drain current for SI4434ADY-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI4434ADY-T1-GE3 is 3.3 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be used with appropriate PCB copper area and airflow to maintain junction temperature below 150 °C. SI4434ADY-T1-GE3 supports this rating with its SO-8 package's R_thJF = 16–21 °C/W.

Does SI4434ADY-T1-GE3 support logic-level gate drive?

SI4434ADY-T1-GE3 has a gate threshold voltage (V_GS(th)) of 2–4 V, making it compatible with 3.3 V and 5 V logic-level drivers. However, full enhancement requires V_GS ≥ 7.5 V to achieve R_DS(on) ≤ 0.170 Ω; at 5 V, R_DS(on) rises significantly and is not guaranteed. SI4434ADY-T1-GE3 is not a true logic-level MOSFET but operates reliably with standard microcontroller GPIO when paired with a gate driver stage.

What is the avalanche energy rating of SI4434ADY-T1-GE3?

SI4434ADY-T1-GE3 is rated for single-pulse avalanche energy (E_AS) of 7.2 mJ under L = 0.1 mH test conditions. This rating confirms ruggedness against inductive switching transients and allows safe operation in circuits with unclamped inductive loads. The device also supports single-pulse avalanche current (I_AS) of 12 A, verified per JEDEC JESD24-1. SI4434ADY-T1-GE3 leverages ThunderFET® process design to sustain these events without parameter shift.

Can SI4434ADY-T1-GE3 be used as a synchronous rectifier?

Yes, SI4434ADY-T1-GE3 is suitable as a synchronous rectifier due to its low R_DS(on) (0.150 Ω), fast body diode (t_rr = 100–150 ns), and low Q_rr (356–550 nC). Its SO-8 package with multiple drain and source pins facilitates low-inductance layout critical for high-frequency rectification. SI4434ADY-T1-GE3 outperforms Schottky diodes in 24–48 V output stages above ~1 A, reducing forward loss and improving thermal performance in LED boost and flyback converters.

What is the gate resistance specification for SI4434ADY-T1-GE3?

SI4434ADY-T1-GE3 has a gate resistance (R_g) of 0.5–4.6 Ω, measured at 1 MHz, and is 100% tested per datasheet. This tight tolerance ensures consistent switching behavior across units and simplifies gate driver design-especially important for EMI control and timing predictability in high-frequency converters. SI4434ADY-T1-GE3's R_g range directly impacts turn-on/turn-off delays and must be factored into total gate loop inductance calculations.

SI4434ADY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Ta), 4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 125 V

FET Feature:: -

Power Dissipation (Max):: 2.9W (Ta), 6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

SI4434ADY-T1-GE3 FAQ

1.How can I place an order for SI4434ADY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4434ADY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4434ADY-T1-GE3 reliable?

The price and inventory of SI4434ADY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4434ADY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4434ADY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4434ADY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4434ADY-T1-GE3?

SI4434ADY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4434ADY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4434ADY-T1-GE3?

For technical support, including SI4434ADY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4434ADY-T1-GE3 requirements.

6.How does Aetrix verify that SI4434ADY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4434ADY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4434ADY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4434ADY-T1-GE3?

All SI4434ADY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4434ADY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4434ADY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4434ADY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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