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Vishay Siliconix SI4435BDY-T1-E3
- Part No.:
- SI4435BDY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4435BDY-T1-E3.pdf
- Description:
- MOSFET P-CH 30V 7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,075
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Product details
Overview
SI4435BDY-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.020 Ω RDS(on) at VGS = -10 V, and -9.1 A continuous drain current at TA = 25 °C, designed for high-efficiency load switching in battery-powered systems.
For engineers reviewing the SI4435BDY-T1-E3 datasheet, SI4435BDY-T1-E3 pinout, SI4435BDY-T1-E3 application, or SI4435BDY-T1-E3 equivalent, key selection criteria include its -30 V VDS, low 0.035 Ω RDS(on) at -4.5 V gate drive, SO-8 package thermal performance (RthJA = 70 °C/W), and Pb-free/halogen-free compliance per RoHS and IEC 61249-2-21.
Technical Context
This P-channel MOSFET operates with a gate threshold voltage of -1 to -3 V and supports logic-level gate drive down to -4.5 V, enabling direct interface with 5 V and 3.3 V microcontrollers. Its integrated body diode exhibits VSD = -0.8 to -1.2 V at -2.1 A, suitable for reverse-polarity protection and synchronous rectification.
The device uses Vishay's advanced high-cell-density TrenchFET process to achieve low on-resistance while maintaining robust safe operating area (SOA) up to 50 A pulsed drain current. Thermal design is supported by specified RthJF = 18–22 °C/W (junction-to-foot) and validated 1" × 1" FR4 board mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for battery-side high-side switch applications |
| RDS(on) @ VGS = -10 V | 0.020 Ω - Enables <185 mW conduction loss at -9.1 A, critical for thermal management |
| RDS(on) @ VGS = -4.5 V | 0.035 Ω - Ensures reliable turn-on with standard 5 V logic outputs without level shifting |
| ID (continuous, TA = 25 °C) | -9.1 A - Supports high-current load switching in portable power rails and USB-C PD circuits |
| Qg | 33–70 nC - Determines gate drive power and switching speed; compatible with standard MOSFET drivers |
| RthJA (steady state) | 70–85 °C/W - Defines maximum power dissipation limit under natural convection on standard PCBs |
| VGS(th) | -1 to -3 V - Confirms predictable turn-on behavior across temperature and manufacturing variation |
Pinout & Package
SI4435BDY-T1-E3 is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The package complies with JEDEC MS-012AC and features gull-wing leads for automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Seven parallel drain terminals connected to internal die and exposed thermal pad - primary current path and heat sink interface |
| 6 | Gate (G) | Control terminal requiring ≤ ±20 V gate-source voltage; low input capacitance enables fast switching |
| S (pins not numbered separately) | Source (S) | Source connection formed by pins 1–4 and 7–8 inner leads - common return path for load current and gate reference |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Power MOSFET architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency switching efficiency |
| Halogen-free and RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer and industrial end-equipment certification |
| Low VGS(th) with tight distribution | -1 to -3 V threshold ensures consistent turn-on across temperature (-55 to 150 °C) and production lots |
| Enhanced SOA with 50 A pulsed rating | Supports surge currents during hot-swap and inrush events without secondary breakdown |
| Optimized body diode recovery | trr = 60–90 ns enables use in bidirectional power paths and reverse-battery protection without external diodes |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active disconnect switch controlled by battery management IC. Use Value: 0.035 Ω RDS(on) at -4.5 V gate drive minimizes voltage drop and self-heating during sustained 6 A discharge. |
Use Scenario: VBUS path control in USB-C receptacles supporting 20 V/5 A power delivery. IC Role / Device Role / Timing Role: Load switch isolating downstream port circuitry from upstream power source. Use Value: -30 V VDS rating provides 10 V margin above 20 V PD specification, ensuring long-term reliability under transient overvoltage. |
| Industrial PLC I/O Module | Automotive Body Control Module |
|
Use Scenario: 24 V DC load switching for solenoids and indicator LEDs in programmable logic controllers. IC Role / Device Role / Timing Role: High-side switch driven by isolated microcontroller GPIO via level-shifting buffer. Use Value: RthJF = 18–22 °C/W allows direct thermal coupling to PCB copper pour, eliminating need for heatsinks in 3 W dissipation scenarios. |
Use Scenario: Smart fuse replacement for interior lighting and window lift circuits in 12 V automotive systems. IC Role / Device Role / Timing Role: E-fuse element providing overcurrent shutdown and diagnostics via current sense resistor. Use Value: Tight VGS(th) distribution (-1 to -3 V) ensures predictable trip point across -40 to 125 °C ambient, meeting AEC-Q101 stress test requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC016N03LS | Lower RDS(on) (0.016 Ω @ -10 V) but higher Qg (42 nC); SO-8 package with different pinout (G/S/D layout) | Higher efficiency at high current, but requires PCB redesign due to non-identical pin assignment | Select when thermal budget is tighter and layout revision is acceptable |
| ON Semiconductor NTMFS4C09N | Same SO-8 footprint and pinout; slightly higher RDS(on) (0.025 Ω @ -10 V); rated for -30 V with 100 % UIS tested | Drop-in replacement with identical layout; preferred where unclamped inductive switching immunity is critical | Select for automotive-grade designs requiring full UIS qualification and mechanical compatibility |
Compared with SI4435BDY-T1-E3, BSC016N03LS offers lower conduction loss but demands layout changes, while NTMFS4C09N provides true pin-compatible replacement with enhanced ruggedness-making it ideal for production continuity in automotive and industrial programs.
Availability
SI4435BDY-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial PLC I/O modules requiring stable component supply, RoHS compliance, and proven thermal performance in SO-8 packages.
Supply support for SI4435BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability validation.
The Si4435BDY belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered for high-efficiency load switching in space-constrained, thermally demanding applications such as portable electronics and automotive subsystems.
FAQ
What is the maximum continuous drain current for SI4435BDY-T1-E3 at 70 °C ambient?
The SI4435BDY-T1-E3 supports -7.3 A continuous drain current at TA = 70 °C when mounted on a 1" × 1" FR4 board. This rating reflects derating due to reduced thermal resistance margin and must be verified against actual PCB copper area and airflow in the target application. The SI4435BDY-T1-E3 datasheet specifies this value under standardized test conditions in Document Number 72123, Rev. D.
Does SI4435BDY-T1-E3 have a qualified AEC-Q101 rating for automotive use?
No, SI4435BDY-T1-E3 is not AEC-Q101 qualified. It is rated for operation from -55 to 150 °C junction temperature and meets RoHS and halogen-free standards, but Vishay does not list it in their AEC-Q101 qualified product portfolio. For automotive body control modules, consider the functionally similar NTMFS4C09N, which carries full AEC-Q101 qualification. Always verify SI4435BDY-T1-E3 suitability with your system-level reliability testing.
Can SI4435BDY-T1-E3 be used as a direct replacement for SI4435DY-T1-E3?
No, SI4435BDY-T1-E3 is not a direct replacement for SI4435DY-T1-E3. The "B" suffix denotes Vishay's Gen III TrenchFET process with improved RDS(on) and SOA, whereas SI4435DY-T1-E3 uses an earlier generation. While both share SO-8 packaging and pinout, SI4435BDY-T1-E3 has lower RDS(on) (0.020 Ω vs. 0.025 Ω @ -10 V) and tighter VGS(th) distribution. System validation is required before substitution.
What is the typical gate charge (Qg) of SI4435BDY-T1-E3 and how does it affect driver selection?
The SI4435BDY-T1-E3 has a typical total gate charge of 33 nC and maximum of 70 nC at VDS = -15 V and VGS = -10 V. This value determines required gate driver peak current and switching losses: for 1 MHz operation, average gate drive power exceeds 2.3 mW. Select drivers capable of ≥1 A peak sink/source current to achieve sub-20 ns rise/fall times. The SI4435BDY-T1-E3 gate characteristics are fully detailed in Figure 9 of its datasheet (72123, Rev. D).
Is the exposed drain pad on SI4435BDY-T1-E3 electrically connected to the drain terminals?
Yes, the exposed drain pad on the SI4435BDY-T1-E3 SO-8 package is internally connected to all drain terminals (pins 1, 2, 3, 4, 5, 7, and 8). It serves as both the primary thermal path and current-carrying node. PCB layout must connect this pad to a large copper pour tied to the system ground plane or power rail, depending on circuit topology. Failure to solder the pad compromises both thermal performance and current handling capability of the SI4435BDY-T1-E3.
SI4435BDY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 9.1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4435BDY-T1-E3 FAQ
1.How can I place an order for SI4435BDY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4435BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4435BDY-T1-E3 reliable?
The price and inventory of SI4435BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4435BDY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4435BDY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4435BDY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4435BDY-T1-E3?
SI4435BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4435BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4435BDY-T1-E3?
For technical support, including SI4435BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4435BDY-T1-E3 requirements.
6.How does Aetrix verify that SI4435BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4435BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4435BDY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4435BDY-T1-E3?
All SI4435BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4435BDY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4435BDY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4435BDY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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