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Vishay Siliconix SI4435FDY-T1-GE3
- Part No.:
- SI4435FDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4435FDY-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 12.6A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:313
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Product details
Overview
SI4435FDY-T1-GE3 from Vishay Siliconix is a P-channel 30 V (D-S) TrenchFET® Gen III power MOSFET in SO-8 package, rated for -12.6 A continuous drain current at TC = 25 °C, with RDS(on) of 0.019 Ω at VGS = -10 V and 0.030 Ω at VGS = -4.5 V, used as a high-efficiency load switch in battery-powered wearable devices.
For engineers reviewing the SI4435FDY-T1-GE3 datasheet, SI4435FDY-T1-GE3 pinout, SI4435FDY-T1-GE3 application, or SI4435FDY-T1-GE3 equivalent, key selection criteria include its -30 V VDS rating, low gate charge (13.5 nC typ. at VGS = -4.5 V), SO-8 thermal performance (RthJA max 56 °C/W), body diode recovery time (20–40 ns), and compatibility with 4.5 V logic-level drive in portable power management circuits.
Technical Context
This P-channel MOSFET employs TrenchFET® Gen III silicon technology to achieve low RDS(on) and fast switching with controlled Qg and Crss. Its gate threshold voltage range (-1.0 V to -2.2 V) ensures reliable turn-on with standard 4.5 V microcontroller outputs while maintaining low leakage (±100 nA IGSS).
The device integrates a robust intrinsic body diode with VSD = -0.82 to -1.2 V at IS = -5 A and trr = 20–40 ns, enabling efficient synchronous rectification or reverse-polarity protection without external diodes in DC/DC converter outputs and adapter switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Drain-Source Voltage) | -30 V - Supports rail voltages up to 30 V in negative-side switching configurations. |
| RDS(on) @ VGS = -10 V | 0.019 Ω max - Enables <19 mΩ conduction loss at full logic-level gate drive for high-current load switching. |
| RDS(on) @ VGS = -4.5 V | 0.030 Ω max - Ensures stable on-resistance with common 4.5 V I/O rails, critical for battery-operated systems. |
| Qg (Total Gate Charge) | 13.5 nC typ. @ VGS = -4.5 V - Reduces gate drive power and switching losses in high-frequency DC/DC applications. |
| ID (Continuous Drain Current) | -12.6 A @ TC = 25 °C - Delivers high current capability in thermally anchored PCB layouts with heatsinked SO-8 foot. |
| Body Diode trr | 20–40 ns - Minimizes reverse recovery energy loss during hard-switching in buck converter freewheel paths. |
| RthJA (Junction-to-Ambient) | 56 °C/W max - Defines worst-case thermal rise on standard FR4; enables 2.2 W dissipation at TA = 25 °C. |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction; pin 1–3 and 8 are source terminals, pin 4 is gate, pins 5–7 are drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common return path for load current; electrically tied internally and externally for low-inductance grounding. |
| 4 | Gate (G) | Control input requiring -4.5 V to -10 V for full enhancement; 100% Rg tested for consistent switching timing. |
| 5, 6, 7 | Drain (D) | Main power output node; connected to internal die drain metallization and exposed thermal pad for heat transfer. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III process | Delivers optimized RDS(on) × Qg figure-of-merit for high-efficiency, high-frequency switching in compact SO-8 footprint. |
| 100% Rg tested | Ensures gate resistance between 0.6 Ω and 6.6 Ω, guaranteeing predictable td(on)/td(off) and EMI behavior across production lots. |
| Low VGS(th) variation | -1.0 V to -2.2 V threshold range supports robust turn-on margin with 4.5 V logic while minimizing shoot-through risk in half-bridge configurations. |
| Fast body diode recovery | trr = 20–40 ns and Qrr = 10–20 nC reduce switching losses and voltage spikes in inductive load switching and synchronous rectification. |
Applications
| Adapter Switch | Load Switch |
|---|---|
Use Scenario: Reverse-polarity and overvoltage protection in USB-C and barrel-jack AC/DC adapters feeding system rails. IC Role / Device Role / Timing Role: High-side P-channel switch controlling input power path with fast turn-off to prevent fault propagation. Use Value: -30 V VDS rating withstands 24 V adapter surges; 0.030 Ω RDS(on) at -4.5 V enables direct MCU GPIO control without level-shifting. |
Use Scenario: Controlled power-up sequencing for subsystems (e.g., display, sensor, radio) in smartwatches and hearables. IC Role / Device Role / Timing Role: Low-leakage, logic-level-compatible load switch isolating downstream circuitry until firmware validation completes. Use Value: ±100 nA IGSS and -1 μA IDSS ensure <1 μA standby current; SO-8 thermal pad sustains 12.6 A peak loads during wake-up bursts. |
| DC/DC Converter High-Side Switch | Battery Protection Circuit |
Use Scenario: High-side synchronous rectifier in non-isolated buck converters powering PMICs or SoCs in mobile platforms. IC Role / Device Role / Timing Role: Fast-turning P-channel switch replacing Schottky diodes to improve efficiency above 1 A load currents. Use Value: 20–40 ns trr and low Crss (150 pF) minimize dead-time losses and ringing; 13.5 nC Qg reduces gate driver power demand. |
Use Scenario: Overcurrent and short-circuit cutoff in Li-ion battery packs for wearables, triggered by protection IC signals. IC Role / Device Role / Timing Role: Robust power FET handling pulsed fault currents up to -32 A (IDM) with minimal voltage drop during normal operation. Use Value: -12.6 A continuous rating at TC = 25 °C and RthJF ≤ 26 °C/W enable reliable thermal shutdown coordination with pack-level monitoring. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PbF | RDS(on) = 0.032 Ω @ -4.5 V; Qg = 16 nC; TO-252 package | Larger footprint and higher RthJA (70 °C/W); suited for lower-density boards with less thermal constraint | Choose when SO-8 layout space is unavailable and thermal budget allows higher junction rise. |
| DMG3415L-7 | RDS(on) = 0.028 Ω @ -4.5 V; Qg = 12.5 nC; same SO-8 package but no 100% Rg test | Lower gate charge but untested Rg increases timing uncertainty in high-reliability timing-critical loads | Prefer for cost-sensitive consumer designs where gate resistance variation is acceptable. |
Compared with IRF7425PbF and DMG3415L-7, the SI4435FDY-T1-GE3 offers the lowest RDS(on) at -4.5 V (0.030 Ω), guaranteed Rg testing for precise timing, and best-in-class thermal resistance in SO-8-making it optimal for space-constrained, thermally demanding wearable power rails.
Availability
SI4435FDY-T1-GE3 is available at Aetrix Electronics and suitable for adapter switch, load switch, and DC/DC converter applications requiring stable component supply, long-term industrial availability, and RoHS-compliant lead-free packaging.
Supply support for SI4435FDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI4435FDY-T1-GE3 belongs to Vishay's TrenchFET® Gen III P-channel MOSFET product line, engineered specifically for high-current, low-voltage load switching in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current for SI4435FDY-T1-GE3 at 70 °C case temperature?
The SI4435FDY-T1-GE3 supports -10 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation; designers must verify PCB copper area and airflow to maintain TC ≤ 70 °C in final layout. The SI4435FDY-T1-GE3 datasheet confirms this value under note "a" for pulsed conditions and "b" for steady-state thermal constraints.
Does SI4435FDY-T1-GE3 support 3.3 V logic-level gate drive?
No, the SI4435FDY-T1-GE3 is not fully enhanced at 3.3 V gate drive. Its VGS(th) range is -1.0 V to -2.2 V, and RDS(on) is only guaranteed at VGS = -4.5 V and -10 V. At -3.3 V, RDS(on) rises significantly beyond 0.030 Ω, increasing conduction loss and junction temperature. For 3.3 V systems, a gate driver or level shifter is required to deliver ≥ -4.5 V to the SI4435FDY-T1-GE3 gate terminal.
What is the safe operating area (SOA) limitation for SI4435FDY-T1-GE3 at DC operation?
At DC operation, the SI4435FDY-T1-GE3 SOA is limited by RDS(on) and thermal resistance. Per the datasheet Figure 13, the DC boundary intersects VDS ≈ 10 V at ID ≈ 8 A, dropping to VDS ≈ 5 V at ID ≈ 12 A. This reflects the 2.2 W power limit at TA = 25 °C (PD = 2.2 W), corresponding to ID² × RDS(on). Exceeding this boundary risks thermal runaway; the SI4435FDY-T1-GE3 must be used within SOA curves shown in the "Safe Operating Area" plot on page 4.
Is SI4435FDY-T1-GE3 suitable for reverse polarity protection?
Yes, the SI4435FDY-T1-GE3 is commonly used for reverse polarity protection due to its P-channel configuration and -30 V VDS rating. When placed in the high-side position with source tied to input and drain to load, it blocks reverse voltage while conducting forward current with low loss. Its body diode is not used in this topology, eliminating reverse recovery concerns. The SI4435FDY-T1-GE3's -12.6 A rating and SO-8 thermal pad make it effective for protecting 5–12 V battery or adapter inputs.
What is the gate-source leakage current specification for SI4435FDY-T1-GE3?
The SI4435FDY-T1-GE3 specifies gate-source leakage current (IGSS) as ±100 nA maximum at VGS = ±20 V and TJ = 25 °C. This low leakage ensures minimal gate drive current requirement and stable biasing in high-impedance control circuits. The value is confirmed in the "Specifications" table on page 2 of the datasheet (Document Number: 75339), under Static parameters. IGSS remains within spec across the full -55 °C to +150 °C operating range.
SI4435FDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen III
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4435FDY-T1-GE3 FAQ
1.How can I place an order for SI4435FDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4435FDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4435FDY-T1-GE3 reliable?
The price and inventory of SI4435FDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4435FDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4435FDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4435FDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4435FDY-T1-GE3?
SI4435FDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4435FDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4435FDY-T1-GE3?
For technical support, including SI4435FDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4435FDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4435FDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4435FDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4435FDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4435FDY-T1-GE3?
All SI4435FDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4435FDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4435FDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4435FDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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