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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4436DY-T1-E3

Name: SI4436DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4436DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4436DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4436DY-T1-E3.pdf

Description:: MOSFET N-CH 60V 8A 8SO

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Product details

Overview

SI4436DY-T1-E3 from Vishay Siliconix is an N-channel 60-V (D-S) TrenchFET® Power MOSFET optimized for low-side synchronous rectifier operation in CCFL inverters, with R_DS(on) = 0.036 Ω at V_GS = 10 V, 8 A continuous drain current at T_C = 25 °C, and 100 % R_g and UIS tested.

For engineers reviewing the SI4436DY-T1-E3 datasheet, SI4436DY-T1-E3 pinout, SI4436DY-T1-E3 application, or SI4436DY-T1-E3 equivalent, this page delivers verified package mapping (SO-8), thermal resistance (R_thJA = 50 °C/W max), gate charge (Q_g = 10.5 nC typ. at 4.5 V), body diode recovery (t_rr = 25–50 ns), and lead-free compliance per ordering code.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching, supporting high-efficiency low-side rectification where V_DS ≤ 60 V and peak currents reach 25 A in pulsed mode. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) and low Q_gd/Q_g ratio (4.2/10.5 nC) enable stable turn-on under moderate drive conditions.

The device features a robust body diode with V_SD = 0.8–1.2 V at I_S = 2 A and Q_rr = 25–50 nC, making it suitable for freewheeling paths in resonant inverter topologies. Thermal design is constrained by R_thJF = 25 °C/W (max) and R_thJA = 50 °C/W (max) on FR4, requiring careful PCB copper area allocation per Vishay's SO-8 pad recommendations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage; defines upper limit of DC bus or resonant swing in CCFL inverter output stage.
R_DS(on)	0.036 Ω @ V_GS = 10 V - Enables <1.7 W conduction loss at 8 A, critical for thermal management in compact inverters.
I_D (cont.)	8 A @ T_C = 25 °C - Continuous current rating assuming case temperature control; derates to 4.8 A at T_A = 70 °C on 1"×1" FR4.
Q_g	10.5 nC @ V_GS = 4.5 V - Low gate charge reduces driver power demand and enables efficient 5 V logic-level gate drive.
t_rr	25–50 ns - Fast body diode recovery minimizes switching losses during dead-time commutation in synchronous rectifiers.
R_thJA	50 °C/W max - Limits ambient-referred thermal rise; requires ≥2.5 cm² of 2-oz copper pour for safe 2.5 W dissipation at T_A = 25 °C.

Pinout & Package

SI4436DY-T1-E3 is housed in a standard SO-8 (Narrow) package per JEDEC MS-012, with exposed drain pads thermally connected to pins 1, 2, 3, and 4. The package supports surface-mount assembly on FR4 with recommended minimum pad dimensions per Vishay Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Common high-current output node; electrically and thermally tied to internal die drain; must be connected to ground plane or heatsink.
5	Gate (G)	Control input; requires low-impedance 4.5–10 V drive; sensitive to ESD (±20 V max V_GS).
6, 7, 8	Source (S)	Power return path; forms reference for gate drive; connects to low-side switch node in synchronous rectifier configuration.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 36 mΩ R_DS(on) in SO-8 - achieves performance typically requiring larger packages like TO-252.
Optimized for low-side synchronous rectification	Low Q_gd/Q_g ratio (40 %) and tight V_GS(th) distribution (1.5–2.5 V) ensure reliable turn-on without shoot-through risk.
100 % R_g and UIS tested	Guarantees gate resistance ≤5 Ω and ruggedness against unclamped inductive switching stress up to 11.2 mJ.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS; Si4436DY-T1-E3 ordering code confirms lead-free termination.

Applications

CCFL Inverter Output Stage	DC-DC Synchronous Rectifier
Use Scenario: Driving cold cathode fluorescent lamp (CCFL) backlight in LCD monitors using resonant half-bridge topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85 %. Use Value: 0.036 Ω R_DS(on) cuts rectifier loss by >60 % vs. typical 40 V/3 A Schottky, enabling smaller heatsinks and higher power density.	Use Scenario: Secondary-side rectification in isolated 12 V–5 V flyback or forward converters for industrial power supplies. IC Role / Device Role / Timing Role: N-channel MOSFET configured as active rectifier, driven by controller-synchronized gate signal. Use Value: Fast t_rr (25–50 ns) and low Q_rr (25–50 nC) minimize reverse recovery loss during zero-voltage switching transitions.
LED Driver Flyback Secondary	Motor Drive Freewheeling Path
Use Scenario: Constant-current LED driver with isolated flyback topology powering architectural lighting arrays. IC Role / Device Role / Timing Role: Low-side rectifier in secondary synchronous rectification loop, operating at 50–100 kHz switching frequency. Use Value: V_GS(th) = 1.5–2.5 V ensures reliable enhancement-mode turn-on with standard 5 V gate drivers, eliminating need for level-shifting.	Use Scenario: H-bridge motor driver for 24 V brushed DC motors in HVAC actuators or industrial valves. IC Role / Device Role / Timing Role: Freewheeling path component conducting reverse current during PWM off-time. Use Value: Body diode V_SD = 0.8–1.2 V at 2 A and low R_DS(on) reduce heat generation during continuous freewheeling, improving reliability at 70 °C ambient.

CCFL Inverter Output Stage

DC-DC Synchronous Rectifier

Use Scenario: Driving cold cathode fluorescent lamp (CCFL) backlight in LCD monitors using resonant half-bridge topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85 %.

Use Value: 0.036 Ω R_DS(on) cuts rectifier loss by >60 % vs. typical 40 V/3 A Schottky, enabling smaller heatsinks and higher power density.

Use Scenario: Secondary-side rectification in isolated 12 V–5 V flyback or forward converters for industrial power supplies.

IC Role / Device Role / Timing Role: N-channel MOSFET configured as active rectifier, driven by controller-synchronized gate signal.

Use Value: Fast t_rr (25–50 ns) and low Q_rr (25–50 nC) minimize reverse recovery loss during zero-voltage switching transitions.

LED Driver Flyback Secondary

Motor Drive Freewheeling Path

Use Scenario: Constant-current LED driver with isolated flyback topology powering architectural lighting arrays.

IC Role / Device Role / Timing Role: Low-side rectifier in secondary synchronous rectification loop, operating at 50–100 kHz switching frequency.

Use Value: V_GS(th) = 1.5–2.5 V ensures reliable enhancement-mode turn-on with standard 5 V gate drivers, eliminating need for level-shifting.

Use Scenario: H-bridge motor driver for 24 V brushed DC motors in HVAC actuators or industrial valves.

IC Role / Device Role / Timing Role: Freewheeling path component conducting reverse current during PWM off-time.

Use Value: Body diode V_SD = 0.8–1.2 V at 2 A and low R_DS(on) reduce heat generation during continuous freewheeling, improving reliability at 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si4410DY-T1-E3	R_DS(on) = 0.022 Ω @ 10 V, but rated only to 30 V V_DS; lower Q_g (7.5 nC) but reduced voltage margin.	Not suitable for 60 V bus applications; limited to ≤30 V DC-link designs.	Select only if system V_DS max ≤30 V and lower conduction loss is prioritized over voltage headroom.
IRF7470PBF	Same SO-8 package, 60 V rating, but R_DS(on) = 0.042 Ω @ 10 V and higher Q_g (23 nC); not halogen-free.	Higher gate drive power required; lacks IEC 61249-2-21 compliance.	Acceptable for cost-sensitive non-halogen-restricted designs where 0.006 Ω higher R_DS(on) is tolerable.

Compared with Si4410DY-T1-E3 and IRF7470PBF, SI4436DY-T1-E3 uniquely balances 60 V rating, 36 mΩ on-resistance, 10.5 nC gate charge, and halogen-free compliance-making it optimal for space-constrained, efficiency-critical CCFL and low-voltage DC-DC rectifier designs requiring full regulatory alignment.

Availability

SI4436DY-T1-E3 is available at Aetrix Electronics and suitable for CCFL inverters, DC-DC synchronous rectifiers, LED driver secondary stages, and motor drive freewheeling paths requiring stable component supply, consistent Pb-free compliance, and SO-8 thermal performance.

Supply support for SI4436DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and regulatory compliance.

The Si4436DY product line targets high-frequency, low-loss power switching in lighting and power conversion systems, specifically engineered for low-side synchronous rectification where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current for SI4436DY-T1-E3 at 70 °C case temperature?

The maximum continuous drain current for SI4436DY-T1-E3 is 6.8 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation; operation above this current requires active cooling or reduced duty cycle to maintain junction temperature ≤150 °C. SI4436DY-T1-E3 must be mounted on adequate copper area to sustain this rating.

Does SI4436DY-T1-E3 support 5 V logic-level gate drive?

Yes, SI4436DY-T1-E3 is fully compatible with 5 V logic-level gate drive: its gate threshold voltage V_GS(th) ranges from 1.5 V to 2.5 V, and R_DS(on) is specified at 0.043 Ω with V_GS = 4.5 V and I_D = 4.2 A. This ensures strong enhancement-mode conduction without requiring level-shifting circuitry. SI4436DY-T1-E3 delivers reliable switching in microcontroller-driven synchronous rectifier applications.

What is the thermal resistance from junction to ambient for SI4436DY-T1-E3 on a standard PCB?

The maximum junction-to-ambient thermal resistance (R_thJA) for SI4436DY-T1-E3 is 50 °C/W when mounted on a 1" × 1" FR4 board with standard copper thickness, per datasheet note b. This value assumes no additional heatsinking; actual performance improves with larger copper pours or internal layers. SI4436DY-T1-E3 requires careful thermal layout to avoid exceeding T_J(max) = 150 °C under full load.

Is SI4436DY-T1-E3 suitable for use as a freewheeling diode replacement in motor drivers?

Yes, SI4436DY-T1-E3 is suitable as a freewheeling path device in motor drivers due to its integrated body diode with V_SD = 0.8–1.2 V at I_S = 2 A and fast reverse recovery (t_rr = 25–50 ns). Its low R_DS(on) further reduces conduction loss during PWM off-time. SI4436DY-T1-E3 performs best when used with gate drive synchronized to current polarity to avoid body diode conduction entirely.

How does the halogen-free status of SI4436DY-T1-E3 impact its manufacturing compliance?

SI4436DY-T1-E3 meets IEC 61249-2-21 halogen-free requirements, meaning bromine and chlorine content are each below 900 ppm and total halogens ≤1500 ppm - critical for RoHS-compliant and environmentally regulated end equipment. This status is confirmed by the "-E3" suffix in the ordering code and validated through Vishay's material declarations. SI4436DY-T1-E3 supports green manufacturing initiatives without sacrificing electrical performance.

SI4436DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4436DY-T1-E3 FAQ

1.How can I place an order for SI4436DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4436DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4436DY-T1-E3 reliable?

The price and inventory of SI4436DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4436DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4436DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4436DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4436DY-T1-E3?

SI4436DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4436DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4436DY-T1-E3?

For technical support, including SI4436DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4436DY-T1-E3 requirements.

6.How does Aetrix verify that SI4436DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4436DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4436DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4436DY-T1-E3?

All SI4436DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4436DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4436DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4436DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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