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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4442DY-T1-E3

Name: SI4442DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4442DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4442DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4442DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 15A 8SO

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Product details

Overview

SI4442DY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, rated for 22 A continuous drain current at 10 V_GS, with R_DS(on) = 4.5 mΩ at V_GS = 10 V, 5.0 mΩ at 4.5 V, and 7.5 mΩ at 2.5 V - optimized for high-efficiency DC-DC converters and load switching in industrial power supplies.

For engineers reviewing the SI4442DY-T1-E3 datasheet, SI4442DY-T1-E3 pinout, SI4442DY-T1-E3 application, or SI4442DY-T1-E3 equivalent, key selection criteria include low gate threshold (0.6–1.5 V), 100% R_g tested, halogen-free compliance per IEC 61249-2-21, and thermal resistance R_thJA = 67 °C/W (steady state) for surface-mount thermal management on FR4 boards.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve enhanced conduction efficiency and fast switching performance. It supports logic-level drive down to 2.5 V_GS, delivers 100 S transconductance at 22 A, and integrates a body diode with V_SD = 0.75–1.1 V at 2.9 A, enabling synchronous rectification and reverse recovery handling up to 80 ns.

The device operates across –55 °C to +150 °C junction temperature range and features guaranteed gate leakage (±100 nA at ±12 V_GS) and zero-gate-voltage drain leakage (≤1 µA at 30 V_DS). Its dynamic parameters include Q_g = 36–50 nC, Q_gd = 10.5 nC, and t_f = 47–70 ns under standard test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24-V industrial bus systems and 12-V automotive auxiliary rails.
R_DS(on) @ 10 V_GS	4.5 mΩ - enables ≤1 W conduction loss at 22 A, critical for high-current point-of-load regulation.
I_D Continuous	22 A @ T_J = 150 °C - supports sustained high-current switching without derating in compact SO-8 footprint.
V_GS(th)	0.6–1.5 V - ensures reliable turn-on with microcontroller GPIOs and low-voltage PWM controllers.
Q_g	36–50 nC - determines gate drive energy requirement and influences switching loss in hard-switched topologies.
R_thJA	67 °C/W (steady state) - defines thermal rise over ambient on standard 1" × 1" FR4 board, guiding heatsinking decisions.
V_SD	0.75–1.1 V @ I_S = 2.9 A - specifies forward drop of integrated body diode for freewheeling path design.

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package, 5.0 mm × 4.0 mm × 1.75 mm height, with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 8	Drain (D)	Internally connected to common drain terminal and exposed thermal pad - primary current path and heat sink interface.
6	Gate (G)	Control input requiring <100 nA leakage and 0.6–1.5 V threshold - sensitive to ESD and layout parasitics.
7	Source (S)	Reference node for gate drive and current sensing - tied to power ground in high-side or low-side configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 4.5 mΩ R_DS(on) in SO-8, enabling higher current density than planar MOSFETs of same size.
100% R_g tested	Ensures consistent gate resistance (0.5–2.6 Ω), critical for predictable switching timing and EMI control.
Halogen-free construction	Meets IEC 61249-2-21 requirements for environmentally compliant PCB assembly and RoHS-3 compliance.
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 2.5 V - eliminates need for gate driver ICs in many MCU-based applications.
Low Q_gd/Q_g ratio	Q_gd = 10.5 nC / Q_g ≈ 21–29% - improves hard-switching efficiency and reduces Miller-induced shoot-through risk.

Applications

DC-DC Buck Converter	Hot-Swap Controller
Use Scenario: High-efficiency 12 V-to-3.3 V step-down converter in programmable logic controller (PLC) backplane power modules. IC Role / Device Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve thermal margin. Use Value: 4.5 mΩ R_DS(on) cuts rectifier loss by >60% vs. 0.45 V Schottky, enabling 94% peak efficiency at 15 A load.	Use Scenario: Inrush current limiting for 24 V fieldbus interface cards during live insertion into industrial backplanes. IC Role / Device Role: Low-side load switch controlling power delivery to downstream circuitry via gate-controlled ramp-up. Use Value: 2.5 V logic-compatible gate allows direct MCU PWM control; 22 A rating supports 20 A steady-state hot-swap operation.
Motor Driver H-Bridge	LED Constant-Current Driver
Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for automated valve actuators in process control systems. IC Role / Device Role: Low-side switch in complementary pair, handling bidirectional current with integrated body diode recovery. Use Value: 80 ns trr and 1.1 V V_SD minimize switching losses during freewheeling, reducing MOSFET heating at 20 kHz PWM.	Use Scenario: Dimmable constant-current LED driver for industrial status lighting in hazardous area enclosures. IC Role / Device Role: PWM-controlled current sink regulating 1.5 A through high-brightness LED strings. Use Value: 5.0 mΩ R_DS(on) at 4.5 V_GS enables direct microcontroller drive while maintaining <75 mW dissipation at full current.

DC-DC Buck Converter

Hot-Swap Controller

Use Scenario: High-efficiency 12 V-to-3.3 V step-down converter in programmable logic controller (PLC) backplane power modules.

IC Role / Device Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve thermal margin.

Use Value: 4.5 mΩ R_DS(on) cuts rectifier loss by >60% vs. 0.45 V Schottky, enabling 94% peak efficiency at 15 A load.

Use Scenario: Inrush current limiting for 24 V fieldbus interface cards during live insertion into industrial backplanes.

IC Role / Device Role: Low-side load switch controlling power delivery to downstream circuitry via gate-controlled ramp-up.

Use Value: 2.5 V logic-compatible gate allows direct MCU PWM control; 22 A rating supports 20 A steady-state hot-swap operation.

Motor Driver H-Bridge

LED Constant-Current Driver

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for automated valve actuators in process control systems.

IC Role / Device Role: Low-side switch in complementary pair, handling bidirectional current with integrated body diode recovery.

Use Value: 80 ns trr and 1.1 V V_SD minimize switching losses during freewheeling, reducing MOSFET heating at 20 kHz PWM.

Use Scenario: Dimmable constant-current LED driver for industrial status lighting in hazardous area enclosures.

IC Role / Device Role: PWM-controlled current sink regulating 1.5 A through high-brightness LED strings.

Use Value: 5.0 mΩ R_DS(on) at 4.5 V_GS enables direct microcontroller drive while maintaining <75 mW dissipation at full current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 5.2 mΩ @ 10 V_GS; SO-8; V_DS = 30 V; Q_g = 42 nC - slightly higher conduction loss and gate charge.	Same package and voltage rating but lower transconductance (80 S vs. 100 S) - less responsive to gate voltage changes.	Prefer SI4442DY-T1-E3 where <4.5 mΩ R_DS(on) or sub-2.5 V logic drive is required.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V_GS; SO-8; V_DS = 30 V; Q_g = 55 nC - lower R_DS(on) but higher gate charge and no 2.5 V_GS rating.	Requires ≥4.5 V gate drive for full enhancement - unsuitable for 3.3 V MCU direct drive.	Select SI4442DY-T1-E3 when logic-level compatibility and balanced Q_g/R_DS(on) trade-off are prioritized over minimal on-resistance.

Compared with IRF7470PBF and DMN3025LSD-13, SI4442DY-T1-E3 uniquely combines 2.5 V logic-level operation, 4.5 mΩ R_DS(on), and 36–50 nC Q_g - making it optimal for space-constrained, low-voltage-control industrial power stages where gate drive simplicity and thermal efficiency must coexist.

Availability

SI4442DY-T1-E3 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and LED driver circuits requiring stable component supply, Pb-free compliance, and SO-8 thermal reliability.

Supply support for SI4442DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si4442DY product line targets high-current, low-voltage power switching applications demanding logic-level gate drive, low R_DS(on), and robust thermal performance in standard SO-8 packaging.

FAQ

What is the maximum continuous drain current rating for SI4442DY-T1-E3 at 70 °C ambient temperature?

The SI4442DY-T1-E3 supports 17 A continuous drain current at T_A = 70 °C with proper PCB copper area, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated ambient temperatures and assumes surface mounting on a 1" × 1" FR4 board per datasheet test condition.

Does SI4442DY-T1-E3 have a guaranteed gate threshold voltage range?

Yes, SI4442DY-T1-E3 has a guaranteed V_GS(th) range of 0.6 V to 1.5 V at I_D = 250 µA and T_J = 25 °C. This specification ensures reliable turn-on behavior across manufacturing lots and enables compatibility with 3.3 V and 2.5 V logic families without external level shifting.

Is SI4442DY-T1-E3 suitable for use in synchronous rectification topologies?

Yes, SI4442DY-T1-E3 is well-suited for synchronous rectification due to its low R_DS(on) (4.5 mΩ at 10 V_GS), fast switching characteristics (t_f = 47–70 ns), and integrated body diode with V_SD = 0.75–1.1 V. Its 2.5 V logic-level gate drive also simplifies control in high-frequency flyback and LLC resonant converters.

What is the thermal resistance from junction to ambient for SI4442DY-T1-E3 under steady-state conditions?

The SI4442DY-T1-E3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 80 °C/W under steady-state conditions on a standard 1" × 1" FR4 board. The typical value is 67 °C/W, which is used for thermal design margining when estimating junction temperature rise under given power dissipation.

How does the total gate charge (Q_g) of SI4442DY-T1-E3 impact its switching performance?

The SI4442DY-T1-E3 exhibits Q_g = 36–50 nC at V_DS = 15 V and I_D = 22 A, directly influencing gate driver sizing and switching loss. Lower Q_g reduces required gate drive current and energy, enabling faster transitions and lower EMI - especially critical in high-frequency DC-DC converters where SI4442DY-T1-E3 is commonly deployed.

SI4442DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4442DY-T1-E3 FAQ

1.How can I place an order for SI4442DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4442DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4442DY-T1-E3 reliable?

The price and inventory of SI4442DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4442DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4442DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4442DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4442DY-T1-E3?

SI4442DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4442DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4442DY-T1-E3?

For technical support, including SI4442DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4442DY-T1-E3 requirements.

6.How does Aetrix verify that SI4442DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4442DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4442DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4442DY-T1-E3?

All SI4442DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4442DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4442DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4442DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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