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Vishay Siliconix SI4442DY-T1-GE3
- Part No.:
- SI4442DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4442DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 15A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,428
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Product details
Overview
SI4442DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, rated for 22 A continuous drain current at 10 VGS, with RDS(on) = 4.5 mΩ at 10 VGS, 5.0 mΩ at 4.5 VGS, and 7.5 mΩ at 2.5 VGS. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drivers.
For engineers reviewing the SI4442DY-T1-GE3 datasheet, SI4442DY-T1-GE3 pinout, SI4442DY-T1-GE3 application, or SI4442DY-T1-GE3 equivalent, key selection criteria include low RDS(on) at logic-level gate drive (2.5–4.5 V), 100% Rg tested gate resistance, halogen-free compliance per IEC 61249-2-21, and SO-8 thermal performance with RthJA = 67 °C/W (steady state).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low on-resistance and fast switching in high-current, low-voltage power stages. Its gate threshold voltage (0.6–1.5 V) enables reliable turn-on with 2.5 V microcontroller outputs, while its 100% Rg testing ensures consistent gate charge (Qg = 36–50 nC) and switching timing (td(on) = 17–30 ns, tf = 47–70 ns).
The device integrates a body diode with VSD = 0.75–1.1 V at 2.9 A and reverse recovery time trr = 50–80 ns, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drives. Thermal design is supported by RthJF = 13–16 °C/W (junction-to-foot) and validated SO-8 footprint per JEDEC MS-012.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V/24 V system rail protection and switching. |
| RDS(on) @ 10 VGS | 4.5 mΩ - Enables ≤0.5 W conduction loss at 22 A, critical for thermally constrained PCB layouts. |
| RDS(on) @ 4.5 VGS | 5.0 mΩ - Ensures robust operation with 3.3 V or 5 V logic-level gate drivers without level-shifting. |
| Qg | 36–50 nC - Determines gate driver power requirement and switching loss in PWM frequencies up to 1 MHz. |
| ID (continuous) | 22 A @ TA = 25 °C - Supports high-current loads such as BLDC motor phases or server VRM output stages. |
| RthJA | 67 °C/W (steady state) - Defines thermal derating: max 1.6 W dissipation at 70 °C ambient before derating. |
| VGS(th) | 0.6–1.5 V - Guarantees turn-on with standard GPIOs and eliminates need for external bias networks. |
Pinout & Package
SO-8 package (JEDEC MS-012), surface-mount, narrow-body, 8-lead outline with exposed drain pad (pins 1–4 and 6–8 are source/drain; pin 5 is gate). Dimensions per Vishay Doc #71192: 4.8–5.0 mm × 3.8–4.0 mm × 1.35–1.75 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | High-current power path terminal; electrically connected to exposed copper pad for thermal conduction and low-inductance routing. |
| 5 | Gate (G) | Control input requiring <100 nA leakage; sensitive to ESD but compatible with standard CMOS drivers. |
| Source (S) | Internal connection only | No dedicated source pin - source terminals are internal to die; all external pins except gate are drain or substrate-connected. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables sub-5 mΩ RDS(on) at 10 VGS in SO-8, reducing conduction loss vs. planar MOSFETs of same size. |
| 100% Rg tested | Ensures gate resistance between 0.5–2.6 Ω, enabling predictable rise/fall times and minimizing gate oscillation risk. |
| Halogen-free construction | Complies with IEC 61249-2-21, meeting RoHS and automotive OEM material declarations without compromising reliability. |
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 2.5 V, eliminating need for gate boosters in 3.3 V microcontroller-based systems. |
| Body diode with low VSD | VSD = 0.75–1.1 V at 2.9 A supports efficient freewheeling in half-bridge topologies without external Schottky. |
Applications
| DC-DC Synchronous Rectifier | Motor Drive High-Side Switch |
|---|---|
Use Scenario: Secondary-side switching in 12 V input, 3.3 V/5 V output buck converters for telecom and industrial power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency >92% at full load. Use Value: 4.5 mΩ RDS(on) cuts rectifier loss by >60% vs. 40 V Schottky, directly increasing converter efficiency and reducing heatsink requirements. |
Use Scenario: High-side switch in 24 V brushed DC motor control for factory automation actuators. IC Role / Device Role / Timing Role: Load switch controlled by isolated gate driver to enable/disable motor power with fast turn-off (<70 ns fall time). Use Value: 5.0 mΩ RDS(on) at 4.5 VGS allows direct drive from optocoupled 5 V logic, eliminating level shifter and reducing BOM count. |
| USB-C Power Delivery Switch | Hot-Swap Controller FET |
Use Scenario: In-line power path switch for USB-C PD 3.0 compliant 20 V/5 A applications. IC Role / Device Role / Timing Role: Main pass FET in overcurrent-protected power delivery path, controlled by dedicated PD controller. Use Value: 30 V VDS rating safely handles 20 V PD transients; 7.5 mΩ RDS(on) at 2.5 VGS enables ultra-low quiescent current control during standby. |
Use Scenario: Primary power switch in 12 V backplane hot-swap modules for network equipment. IC Role / Device Role / Timing Role: Inrush-limiting and fault-isolation FET managed by TI TPS2375x or similar hot-swap controller. Use Value: 60 A pulsed drain rating (IDM) withstands capacitor charging surges; RthJF = 13 °C/W enables rapid thermal response to overcurrent events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 5.2 mΩ @ 10 VGS, SO-8, but VGS(th) = 1.0–2.0 V - less suitable for 2.5 V drive. | Requires ≥3.3 V gate drive for full enhancement; not recommended where 2.5 V logic control is mandatory. | Select IRF7470PBF only if gate drive is ≥3.3 V and lower Qgd (8.2 nC) is prioritized over ultra-low VGS(th). |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 VGS, but SO-8 dual-N package - single-channel equivalent has higher cost and different pinout. | Not pin-compatible; requires PCB redesign due to different lead frame and internal source/drain assignment. | Choose DMN3025LSD-13 only when dual-FET integration is needed and layout revision is acceptable. |
Compared with IRF7470PBF and DMN3025LSD-13, SI4442DY-T1-GE3 uniquely delivers 2.5 V logic compatibility with 4.5 mΩ RDS(on) in standard SO-8, enabling drop-in replacement in existing 3.3 V/2.5 V gate-drive designs without sacrificing thermal or conduction performance.
Availability
SI4442DY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, USB-C power delivery, and hot-swap modules requiring stable component supply, halogen-free compliance, and logic-level gate drive capability.
Supply support for SI4442DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.
The Si4442DY belongs to Vishay's TrenchFET® Gen III logic-level N-channel MOSFET family, engineered for high-current, low-voltage switching in space-constrained power conversion and motor control applications.
FAQ
What is the maximum continuous drain current for SI4442DY-T1-GE3 at 70 °C ambient temperature?
The SI4442DY-T1-GE3 supports 17 A continuous drain current at TA = 70 °C with proper PCB copper area per Vishay's SO-8 thermal guidelines. This rating assumes surface mounting on a 1" × 1" FR4 board and accounts for thermal derating from the 22 A rating at 25 °C ambient. Exceeding this current without additional heatsinking risks junction temperature exceeding 150 °C.
Does SI4442DY-T1-GE3 have a specified gate charge value, and how does it affect switching performance?
Yes, SI4442DY-T1-GE3 has a total gate charge (Qg) of 36–50 nC at VDS = 15 V, VGS = 4.5 V, and ID = 22 A. This value directly determines required gate driver peak current and switching losses - for example, driving Qg in 20 ns demands ~2.5 A peak current. Lower Qg improves high-frequency efficiency in DC-DC converters operating above 500 kHz.
Is SI4442DY-T1-GE3 suitable for use as a synchronous rectifier in a 5 V output buck converter?
Yes, SI4442DY-T1-GE3 is well-suited as a synchronous rectifier in 5 V buck converters. Its RDS(on) of 5.0 mΩ at 4.5 VGS and 7.5 mΩ at 2.5 VGS minimizes conduction loss, while its body diode VSD of 0.75–1.1 V ensures low forward drop during dead-time conduction. The SO-8 package provides adequate thermal performance for typical 5–10 A output currents.
What is the gate threshold voltage range for SI4442DY-T1-GE3, and why does it matter for logic-level operation?
The gate threshold voltage (VGS(th)) for SI4442DY-T1-GE3 is specified from 0.6 V to 1.5 V at ID = 250 µA. This low range ensures full enhancement begins well below 2.5 V, enabling reliable turn-on with standard 2.5 V or 3.3 V microcontroller GPIOs without external gate boosting - a key advantage over MOSFETs with VGS(th) > 2.0 V.
How does the halogen-free status of SI4442DY-T1-GE3 impact its manufacturing and compliance?
SI4442DY-T1-GE3 is certified halogen-free per IEC 61249-2-21, meaning bromine and chlorine content are each <900 ppm and total halogens <1500 ppm. This satisfies stringent environmental requirements for automotive, industrial, and medical end equipment, and eliminates corrosive gas generation during soldering or fire events - critical for long-term reliability in sealed enclosures.
SI4442DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4442DY-T1-GE3 FAQ
1.How can I place an order for SI4442DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4442DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4442DY-T1-GE3 reliable?
The price and inventory of SI4442DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4442DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4442DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4442DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4442DY-T1-GE3?
SI4442DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4442DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4442DY-T1-GE3?
For technical support, including SI4442DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4442DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4442DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4442DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4442DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4442DY-T1-GE3?
All SI4442DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4442DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4442DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4442DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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