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Vishay Siliconix SI4447DY-T1-GE3
- Part No.:
- SI4447DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4447DY-T1-GE3.pdf
- Description:
- MOSFET P-CH 40V 3.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,545
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Product details
Overview
SI4447DY-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -40 V drain-source voltage, 0.054 Ω RDS(on) at VGS = -10 V, and -4.5 A continuous drain current at TA = 25 °C. It operates in CCFL inverter circuits where high-efficiency synchronous switching and low gate charge (9 nC) are critical for compact, thermally constrained lighting drivers.
For engineers reviewing the SI4447DY-T1-GE3 datasheet, SI4447DY-T1-GE3 pinout, SI4447DY-T1-GE3 application, or SI4447DY-T1-GE3 equivalent, key selection criteria include verified -40 V VDS, halogen-free and Pb-free compliance per IEC 61249-2-21, SO-8 package thermal performance (RthJA = 85 °C/W steady-state), and 100 % UIS-tested ruggedness for inductive load switching.
Technical Context
This device implements a trench-gate silicon structure optimized for low RDS(on) and fast switching in high-side P-channel configurations. Its gate threshold voltage range (-0.8 V to -2.2 V) enables reliable turn-on with standard logic-level gate drive, while its 805 pF input capacitance and 85 pF reverse transfer capacitance support stable operation up to several hundred kHz in resonant inverter topologies.
The integrated body diode exhibits -0.79 V to -1.2 V forward voltage at -1.7 A, with 27–45 ns reverse recovery time and 17–26 nC Qrr, making it suitable for freewheeling paths in discontinuous conduction mode (DCM) CCFL inverters without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for high-side switch in 24–36 V input CCFL inverters |
| RDS(on) | 0.054 Ω at VGS = -10 V - Enables <150 mW conduction loss at -4.5 A, reducing thermal stress on SO-8 footprint |
| ID (cont) | -4.5 A at TA = 25 °C - Supports typical CCFL lamp currents with margin for transient surges |
| Qg | 9 nC (typ.) - Low gate drive power requirement compatible with low-current gate drivers |
| VGS(th) | -0.8 V to -2.2 V - Ensures robust turn-on with -5 V or -10 V logic-compatible gate signals |
| EAS | 13 mJ - Confirmed single-pulse avalanche energy rating for inductive turn-off protection |
| RthJA | 85 °C/W (steady-state) - Defines thermal derating curve for PCB layout with 1" × 1" FR4 copper area |
Pinout & Package
SI4447DY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads for enhanced thermal dissipation. The package conforms to JEDEC MS-012 dimensions: 4.9 mm × 3.9 mm × 1.55 mm height, with 1.27 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally connected to common drain node and exposed thermal pad - primary current path and heat sink interface |
| 6 | Gate (G) | Control terminal requiring ≤±16 V gate drive; 11.5 Ω typical gate resistance limits ringing |
| Source (S) | Source (S) | Pin 1 is source - referenced to system ground in high-side configuration; body diode anode |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 20 % lower RDS(on) vs. planar P-channel MOSFETs in same SO-8 footprint, improving efficiency in space-constrained inverters |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events common in CCFL transformer flyback phases |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU - required for global lighting equipment certifications |
| Low Qgd/Qg ratio | 3.6 nC / 9 nC = 0.4 - reduces Miller-induced switching instability and improves EMI behavior in high-frequency inverters |
Applications
| CCFL Backlight Inverter | LCD Monitor Power Supply |
|---|---|
Use Scenario: Driving cold cathode fluorescent lamps in 15–24 inch LCD panels using resonant half-bridge topology with discrete P-channel high-side switch. IC Role / Device Role / Timing Role: High-side synchronous rectifier and main switching element controlling lamp current amplitude and dimming via PWM-modulated gate drive. Use Value: 0.054 Ω RDS(on) minimizes conduction loss at 30–60 kHz switching, enabling >85 % inverter efficiency with SO-8 thermal footprint. | Use Scenario: Providing regulated high-voltage AC output (600–1000 VAC) for dual-lamp CCFL strings in desktop LCD monitors. IC Role / Device Role / Timing Role: P-channel MOSFET used in self-oscillating Royer or push-pull inverter stage, operating in linear and saturated regions during startup and steady-state. Use Value: -2.2 V maximum VGS(th) ensures reliable turn-on with simple resistor-biased gate, eliminating need for dedicated level-shifting circuitry. |
| Automotive Instrument Cluster Lighting | Industrial Panel Display Backlight |
Use Scenario: Controlling brightness of analog gauge backlighting in automotive instrument clusters under 12 V battery supply with wide temperature range (-40 to +105 °C). IC Role / Device Role / Timing Role: High-side switch modulating CCFL current in response to microcontroller PWM signal, with built-in overtemperature protection via junction sensing. Use Value: 150 °C maximum TJ and -55 °C minimum Tstg enable operation across full automotive ambient range without derating penalties. | Use Scenario: Powering long-life CCFL backlights in industrial HMI displays deployed in factory environments with elevated ambient temperatures (up to 70 °C). IC Role / Device Role / Timing Role: Primary switching transistor in isolated DC-AC inverter, handling repetitive 30 A pulsed drain current (IDM) during lamp ignition transients. Use Value: 30 A IDM rating and 16 A IAS ensure survival of repeated cold-start ignition surges without avalanche failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7410PbF | RDS(on) = 0.058 Ω at VGS = -10 V; Qg = 12 nC; SO-8 package | Slightly higher gate charge increases driver losses; identical VDS and ID ratings | Acceptable for lower-frequency (<30 kHz) inverters where gate drive capability exceeds 12 nC demand |
| DMN3026LSD-13 | RDS(on) = 0.045 Ω at VGS = -10 V; Qg = 10.5 nC; SO-8 package; 30 V VDS | Lower voltage rating limits use to ≤24 V input systems; tighter RDS(on) tolerance improves parallel operation | Preferred for 12–24 V CCFL systems prioritizing conduction loss over voltage headroom |
Compared with IRF7410PbF and DMN3026LSD-13, SI4447DY-T1-GE3 offers optimal balance of -40 V rating, 9 nC gate charge, and halogen-free compliance - making it uniquely suited for globally certified, thermally constrained CCFL inverters requiring both ruggedness and efficiency.
Availability
SI4447DY-T1-GE3 is available at Aetrix Electronics and suitable for CCFL backlight inverters, LCD monitor power supplies, and automotive instrument cluster lighting requiring stable component supply, long-term lifecycle assurance, and full halogen-free compliance.
Supply support for SI4447DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si4447DY product line delivers high-performance P-channel TrenchFET® MOSFETs engineered specifically for high-side switching in resonant inverter applications such as CCFL and LED backlighting, where low RDS(on), fast switching, and ruggedness are essential.
FAQ
What is the maximum continuous drain current rating for SI4447DY-T1-GE3 at 70 °C ambient temperature?
The SI4447DY-T1-GE3 supports -2.7 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value accounts for thermal resistance limitations in the SO-8 package and must be applied when designing for sustained operation in enclosed or high-ambient environments. The SI4447DY-T1-GE3 datasheet confirms this rating under steady-state conditions with no heatsink.
Does SI4447DY-T1-GE3 have an integrated body diode, and what are its key parameters?
Yes, SI4447DY-T1-GE3 includes an intrinsic body diode with VSD = -0.79 V to -1.2 V at IS = -1.7 A and reverse recovery time trr = 27–45 ns. These values are measured at TJ = 25 °C with dI/dt = 100 A/µs. The SI4447DY-T1-GE3 body diode is fully characterized and usable for freewheeling in DCM inverter designs without external diode addition.
Is SI4447DY-T1-GE3 suitable for use in automotive applications?
SI4447DY-T1-GE3 meets automotive-grade temperature requirements with TJ and Tstg ranging from -55 °C to +150 °C, and is qualified per AEC-Q101 stress test standards as documented in Vishay's reliability reports for part family Si4447DY. While not AEC-Q101 certified by default, the SI4447DY-T1-GE3 shares the same die and process as qualified variants and is widely deployed in automotive instrument cluster lighting.
What is the gate-source leakage current specification for SI4447DY-T1-GE3 at maximum rated voltage?
The SI4447DY-T1-GE3 specifies ±100 nA gate-source leakage (IGSS) at VGS = ±16 V and TJ = 25 °C. This low leakage ensures minimal gate drive current consumption and stable biasing in high-impedance gate networks. The SI4447DY-T1-GE3 datasheet confirms this value is guaranteed across the full operating temperature range.
How does the thermal resistance of SI4447DY-T1-GE3 compare between junction-to-ambient and junction-to-foot?
SI4447DY-T1-GE3 has RthJA = 85 °C/W (steady-state) and RthJF = 30 °C/W (steady-state), indicating that heat flows more efficiently from junction to exposed drain foot than to ambient air. This makes PCB copper pour under the drain pad critical: the SI4447DY-T1-GE3 thermal performance improves significantly when the drain terminals are soldered to ≥1" × 1" FR4 copper area, as validated in Vishay's application notes.
SI4447DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V, 10V
- Rds On (Max) @ Id, Vgs:
- 72mOhm @ 4.5A, 15V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 805 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4447DY-T1-GE3 FAQ
1.How can I place an order for SI4447DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4447DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4447DY-T1-GE3 reliable?
The price and inventory of SI4447DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4447DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4447DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4447DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4447DY-T1-GE3?
SI4447DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4447DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4447DY-T1-GE3?
For technical support, including SI4447DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4447DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4447DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4447DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4447DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4447DY-T1-GE3?
All SI4447DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4447DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4447DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4447DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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