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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4448DY-T1-GE3

Name: SI4448DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4448DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4448DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4448DY-T1-GE3.pdf

Description:: MOSFET N-CH 12V 50A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI4448DY-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 12 V V_DS, with R_DS(on) = 1.7 mΩ at V_GS = 4.5 V, 50 A continuous drain current at T_C = 25 °C, and SO-8 package. It serves as a high-efficiency synchronous rectifier or POL switch in low-voltage DC/DC converters.

For engineers reviewing the SI4448DY-T1-GE3 datasheet, SI4448DY-T1-GE3 pinout, SI4448DY-T1-GE3 application, or SI4448DY-T1-GE3 equivalent, key selection criteria include its 1.7 mΩ on-resistance at 4.5 V gate drive, 56 nC total gate charge, halogen-free and lead-free compliance, and thermal resistance of 13 °C/W (junction-to-foot), critical for compact high-current power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching in 12 V input systems. Its gate threshold voltage (0.4–1.0 V) enables compatibility with 1.8 V, 2.5 V, and 4.5 V logic-level drivers, while 100 % UIS testing ensures ruggedness under inductive switching stress.

The device features a source-drain body diode with t_rr = 84–140 ns and Q_rr = 93–150 nC, supporting synchronous rectification and reducing reverse recovery losses. Its SO-8 footprint provides standardized PCB layout and thermal management via exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum blocking voltage for 5 V and 3.3 V rail applications
R_DS(on)	1.7 mΩ at V_GS = 4.5 V - Enables <1 W conduction loss at 20 A in POL stage
I_D (continuous)	50 A at T_C = 25 °C - Supports high-current point-of-load designs without parallel devices
Q_g	56 nC at V_GS = 2.5 V - Low gate charge reduces driver power and switching loss at 1–2 MHz
R_thJF	13 °C/W (typ.) - Efficient heat transfer to PCB copper through exposed drain pad
V_GS(th)	0.4–1.0 V - Ensures turn-on with low-voltage controllers and avoids shoot-through risk
t_rr	84 ns (typ.) - Minimizes body diode reverse recovery energy in synchronous buck topologies

Pinout & Package

SO-8 (narrow) package per JEDEC MS-012, with exposed drain pad on underside for thermal conduction. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Source, Pin 4 = Source, Pin 5 = Source, Pin 6 = Drain, Pin 7 = Drain, Pin 8 = Drain - standard 3-source / 3-drain configuration for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 1.8–4.5 V logic-level drive; 0.75 Ω gate resistance limits ringing
2,3,4,5 (S)	Source	Power return path; four pins reduce source inductance and improve current sharing in high-dI/dt operation
6,7,8 (D)	Drain	Main power input/output node; three pins + exposed pad maximize current capacity and thermal dissipation

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for 12 V systems
100 % UIS tested	Guarantees avalanche robustness up to 20 A and 20 mJ without derating
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU
Exposed drain pad	Enables direct thermal coupling to inner-layer copper planes for ≤13 °C/W R_thJF
Low V_GS(th) variation	±0.3 V max over temperature ensures stable turn-on timing across -55 to 150 °C

Applications

Server VRM	GPU Power Delivery
Use Scenario: High-density 12 V input → 0.8 V output buck converter delivering >400 A to CPU cores. IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase interleaved topology. Use Value: 1.7 mΩ R_DS(on) minimizes conduction loss; 56 nC Q_g supports 1 MHz+ switching with low driver loss.	Use Scenario: Compact 3-phase GPU core rail with tight thermal envelope and dynamic load steps >100 A/µs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery. Use Value: 84 ns t_rr and 93 nC Q_rr suppress voltage spikes and reduce dead-time losses.
Industrial PLC I/O Module	5G Baseband Power Supply
Use Scenario: Isolated 12 V POL supply powering FPGA, ADCs, and interface ICs in harsh environments. IC Role / Device Role / Timing Role: Primary switching element in non-isolated buck regulator. Use Value: 150 °C max junction temperature and -55 °C min storage rating ensure reliability across extended industrial range.	Use Scenario: Distributed 12 V → 1.2 V power for RF transceiver ASICs requiring ultra-low noise and transient response. IC Role / Device Role / Timing Role: Final-stage synchronous MOSFET in cascaded buck architecture. Use Value: Low gate resistance (0.75 Ω typ.) and tight R_DS(on) distribution (±15 %) enable precise current balancing across phases.

Server VRM

GPU Power Delivery

Use Scenario: High-density 12 V input → 0.8 V output buck converter delivering >400 A to CPU cores.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase interleaved topology.

Use Value: 1.7 mΩ R_DS(on) minimizes conduction loss; 56 nC Q_g supports 1 MHz+ switching with low driver loss.

Use Scenario: Compact 3-phase GPU core rail with tight thermal envelope and dynamic load steps >100 A/µs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery.

Use Value: 84 ns t_rr and 93 nC Q_rr suppress voltage spikes and reduce dead-time losses.

Industrial PLC I/O Module

5G Baseband Power Supply

Use Scenario: Isolated 12 V POL supply powering FPGA, ADCs, and interface ICs in harsh environments.

IC Role / Device Role / Timing Role: Primary switching element in non-isolated buck regulator.

Use Value: 150 °C max junction temperature and -55 °C min storage rating ensure reliability across extended industrial range.

Use Scenario: Distributed 12 V → 1.2 V power for RF transceiver ASICs requiring ultra-low noise and transient response.

IC Role / Device Role / Timing Role: Final-stage synchronous MOSFET in cascaded buck architecture.

Use Value: Low gate resistance (0.75 Ω typ.) and tight R_DS(on) distribution (±15 %) enable precise current balancing across phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 12 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 1.9 mΩ @ 4.5 V; Q_g = 42 nC; SO-8 with enhanced thermal pad	Slightly higher conduction loss but lower gate charge improves light-load efficiency	Prefer when gate drive capability is limited or switching frequency exceeds 1.5 MHz
DMN6016LFG-7	R_DS(on) = 1.6 mΩ @ 4.5 V; Q_g = 65 nC; 2×2 mm WDFN package	Smaller footprint but higher R_thJA (50 °C/W); no exposed drain for PCB heatsinking	Prefer for space-constrained designs where thermal budget allows higher ambient rise

Compared with IRLHS6342TRPBF and DMN6016LFG-7, SI4448DY-T1-GE3 offers the best balance of low R_DS(on), moderate Q_g, and proven SO-8 thermal performance-making it optimal for high-current, thermally demanding 12 V POL applications where board-level heatsinking is available.

Availability

SI4448DY-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery modules, and industrial PLC I/O supplies requiring stable component supply and long-term manufacturability.

Supply support for SI4448DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The Si4448DY product line targets high-efficiency, low-voltage DC/DC conversion in data center and telecom infrastructure, emphasizing low R_DS(on), fast switching, and robust avalanche performance in standard surface-mount packages.

FAQ

What is the maximum continuous drain current for SI4448DY-T1-GE3 at 70 °C case temperature?

The SI4448DY-T1-GE3 supports 40 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB copper area and airflow conditions in the final design.

Does SI4448DY-T1-GE3 support 1.8 V gate drive in practice?

Yes, SI4448DY-T1-GE3 delivers R_DS(on) = 2.7 mΩ at V_GS = 1.8 V and I_D = 10 A, enabling reliable operation with 1.8 V logic-level controllers. Its V_GS(th) range (0.4–1.0 V) ensures turn-on margin, though designers should verify gate drive strength and layout parasitics to maintain stable switching behavior.

What is the thermal resistance from junction to foot (R_thJF) for SI4448DY-T1-GE3?

The SI4448DY-T1-GE3 has a typical junction-to-foot thermal resistance of 13 °C/W under steady-state conditions, measured from die junction to the exposed drain pad. This value assumes proper soldering to a minimum 1" × 1" FR4 board with 2 oz copper; actual performance depends on PCB stack-up and thermal vias beneath the pad.

Is SI4448DY-T1-GE3 suitable for synchronous rectification in buck converters?

Yes, SI4448DY-T1-GE3 is well-suited for synchronous rectification due to its low R_DS(on), fast body diode (t_rr = 84 ns typ.), and low Q_rr (93 nC). Its 3-source pin configuration minimizes source inductance, improving control loop stability and reducing voltage overshoot during commutation in high-frequency buck stages.

How does the halogen-free status of SI4448DY-T1-GE3 affect its reliability or processing?

The halogen-free status of SI4448DY-T1-GE3 complies with IEC 61249-2-21 and does not compromise electrical or thermal performance. Vishay validates all halogen-free materials for equivalent moisture sensitivity, solderability, and long-term reliability under JEDEC J-STD-020 and AEC-Q101 stress conditions-no process or qualification changes are required for assembly.

SI4448DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 12350 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 7.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4448DY-T1-GE3 FAQ

1.How can I place an order for SI4448DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4448DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4448DY-T1-GE3 reliable?

The price and inventory of SI4448DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4448DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4448DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4448DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4448DY-T1-GE3?

SI4448DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4448DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4448DY-T1-GE3?

For technical support, including SI4448DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4448DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4448DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4448DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4448DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4448DY-T1-GE3?

All SI4448DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4448DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4448DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4448DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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