Vishay Siliconix SI4456DY-T1-E3

Overview

SI4456DY-T1-E3 from Vishay Siliconix is an N-channel 40-V TrenchFET® Gen II power MOSFET in SO-8 package, delivering R_DS(on) = 3.8 mΩ at V_GS = 10 V and 4.5 mΩ at V_GS = 4.5 V, with 33 A continuous drain current (T_C = 25 °C) and 37.5 nC total gate charge - optimized for high-efficiency secondary rectification and point-of-load DC/DC conversion.

For engineers reviewing the SI4456DY-T1-E3 datasheet, SI4456DY-T1-E3 pinout, SI4456DY-T1-E3 application, or SI4456DY-T1-E3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, 100% R_g and UIS tested reliability, halogen-free compliance per IEC 61249-2-21, and thermal performance validated on 1" × 1" FR4 board.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: t_d(on) = 21 ns and t_f = 8 ns under 10 V gate drive, and t_d(on) = 145 ns and t_f = 15 ns under 4.5 V drive. Its body diode exhibits t_rr = 38–60 ns and Q_rr = 42–65 nC at I_F = 13 A, dI/dt = 100 A/µs, enabling synchronous rectifier operation with reduced recovery loss.

The device is rated for V_DS = 40 V, V_GS = ±20 V, and operates across T_J = –55 to +150 °C. Thermal resistance is R_thJF = 13–16 °C/W (junction-to-foot, steady state) and R_thJA = 29–35 °C/W (junction-to-ambient, t ≤ 5 s), supporting compact PCB layouts without external heatsinking in moderate-power applications.

Key Specifications

Pinout & Package

SI4456DY-T1-E3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement. Pin 1–8 follow JEDEC SOIC-N layout: pins 1, 2, 3, 4 = Source; pins 5, 6, 7, 8 = Drain; pin 3 = Gate (top view).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7470PBF and DMN3026LSD-13, SI4456DY-T1-E3 provides superior gate drive flexibility at 4.5 V, verified UIS ruggedness for industrial transients, and guaranteed 40 V V_DS margin - making it the preferred choice for high-reliability, high-efficiency secondary-side switching in telecom and server power.

Availability

SI4456DY-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom power supplies requiring stable component supply, halogen-free compliance, and proven UIS ruggedness.

Supply support for SI4456DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on performance, reliability, and application-specific optimization.

The Si4456DY belongs to Vishay's TrenchFET® Gen II power MOSFET family, engineered for high-efficiency, high-current DC/DC conversion in computing, telecom, and industrial power systems where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for SI4456DY-T1-E3 at 70 °C case temperature?

The maximum continuous drain current for SI4456DY-T1-E3 is 27 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and must be applied in thermal design calculations alongside R_thJF = 13–16 °C/W to ensure T_J remains ≤ 150 °C. SI4456DY-T1-E3 maintains this rating without requiring forced air or heatsink in typical 1" × 1" FR4 layouts.

Does SI4456DY-T1-E3 support logic-level gate drive?

Yes, SI4456DY-T1-E3 supports logic-level gate drive with a guaranteed V_GS(th) range of 1.5–2.8 V and R_DS(on) = 4.5 mΩ at V_GS = 4.5 V and I_D = 15 A. This enables direct interface with 3.3 V or 5 V PWM controllers without level-shifting circuitry. The low threshold also ensures robust turn-on margin across temperature and process variation, making SI4456DY-T1-E3 suitable for high-density POL regulators where gate drive simplicity is essential.

Is SI4456DY-T1-E3 halogen-free and RoHS-compliant?

Yes, SI4456DY-T1-E3 is halogen-free per IEC 61249-2-21 and RoHS-compliant, as confirmed in the ordering information and features section of the official Vishay datasheet (Document Number: 73852, Rev. B). The "-E3" suffix explicitly denotes lead-free and halogen-free construction. SI4456DY-T1-E3 meets both environmental compliance and reliability requirements for modern industrial and telecom equipment without trade-offs in electrical performance or thermal capability.

What is the typical total gate charge (Q_g) of SI4456DY-T1-E3 at 4.5 V gate drive?

The typical total gate charge (Q_g) of SI4456DY-T1-E3 is 37.5 nC at V_GS = 4.5 V, V_DS = 20 V, and I_D = 20 A, as measured in the dynamic specifications table. This value directly impacts switching loss and gate driver sizing in high-frequency applications such as 500 kHz–1 MHz POL converters. SI4456DY-T1-E3's Q_g is optimized to balance fast switching with manageable driver current demand - critical for minimizing overall system loss while maintaining signal integrity.

How does the body diode performance of SI4456DY-T1-E3 compare to standard Schottky rectifiers in synchronous rectification?

The body diode of SI4456DY-T1-E3 delivers t_rr = 38–60 ns and Q_rr = 42–65 nC at I_F = 13 A and dI/dt = 100 A/µs, enabling efficient synchronous rectification with significantly lower reverse recovery loss than standard Schottky diodes in high-dI/dt conditions. Unlike Schottky devices, SI4456DY-T1-E3's body diode is integrated into the MOSFET structure and benefits from matched thermal characteristics - ensuring consistent performance across temperature. In practice, this allows SI4456DY-T1-E3 to replace discrete Schottkys in 12 V and 24 V output stages while improving efficiency by 0.5–1.0% at full load.