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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4456DY-T1-GE3

Name: SI4456DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4456DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4456DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4456DY-T1-GE3.pdf

Description:: MOSFET N-CH 40V 33A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI4456DY-T1-GE3 from Vishay Siliconix is an N-channel 40-V TrenchFET® Gen II power MOSFET in SO-8 package, with R_DS(on) = 3.8 mΩ at V_GS = 10 V, 33 A continuous drain current (T_C = 25 °C), and 37.5 nC total gate charge. It serves as a high-efficiency synchronous rectifier or point-of-load switch in DC/DC converters.

For engineers reviewing the SI4456DY-T1-GE3 datasheet, SI4456DY-T1-GE3 pinout, SI4456DY-T1-GE3 application, or SI4456DY-T1-GE3 equivalent, key selection criteria include low conduction loss at 10 V drive, halogen-free and Pb-free compliance, thermal performance on FR4, and suitability for secondary-side synchronous rectification in isolated topologies.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching. Its gate threshold voltage (1.5–2.8 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 100 % R_g and UIS testing ensures robustness in hard-switching and avalanche-prone circuits.

The device features a source-drain body diode with V_SD = 0.71–1.1 V at I_S = 3 A and t_rr = 38–60 ns at T_J = 25 °C, supporting efficient freewheeling in buck and flyback converters without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on)	3.8 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 20 A in high-current POL rails
I_D (continuous)	33 A @ T_C = 25 °C - Supports >25 A steady-state output in thermally managed layouts
Q_g	37.5 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and switching loss at 500 kHz–1 MHz
R_thJA	35 °C/W max - Limits junction rise to ~90 °C at 3.5 W dissipation on 1" × 1" FR4
V_GS(th)	1.5–2.8 V - Ensures turn-on with standard logic-level PWM controllers
t_rr	38–60 ns - Minimizes reverse recovery loss during synchronous rectification transitions

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement; JEDEC-compliant footprint per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally connected to exposed thermal pad - primary current path and heat sink interface
6	Gate (G)	Control terminal; requires <1.6 Ω gate resistance to limit ringing and ensure stable 10 V switching
S (pins not labeled; internal source connection)	Source (S)	Common reference for gate drive and load return; tied to PCB ground plane for low-inductance layout

Key Features

Feature	Design Value
TrenchFET® Gen II architecture	Delivers 15 % lower R_DS(on) vs. prior generation at same die size, improving power density
100 % R_g tested	Guarantees gate resistance ≤1.6 Ω, enabling predictable Miller plateau timing and driver sizing
100 % UIS tested	Validates ruggedness under unclamped inductive switching up to 40 A and 80 mJ energy
Halogen-free & Pb-free	Meets IEC 61249-2-21 and RoHS Directive 2011/65/EU without compromising thermal or electrical specs

Applications

Server VRM	Industrial DC/DC Converter
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, commutated at 500 kHz–1 MHz. Use Value: 3.8 mΩ R_DS(on) cuts conduction loss by >30 % versus 5.5 mΩ alternatives, reducing heatsink requirements.	Use Scenario: 48 V-to-12 V isolated forward converter in programmable logic controller power supply. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode. Use Value: Body diode t_rr ≤60 ns and V_SD ≤1.1 V enable >95 % efficiency at full load without cross-conduction risk.
Telecom Point-of-Load	Automotive Infotainment DC/DC
Use Scenario: Compact 12 V-to-3.3 V buck regulator powering FPGA I/O banks in base station radio units. IC Role / Device Role / Timing Role: High-side switch with integrated bootstrap gate drive support. Use Value: 2.8 V V_GS(th) max ensures reliable turn-on using 3.3 V gate drivers, eliminating level-shifting circuitry.	Use Scenario: 12 V-to-5 V non-isolated buck converter for display backlight and audio amplifier rails. IC Role / Device Role / Timing Role: Low-R_DS(on) power switch operating in automotive ambient (−40 to +105 °C). Use Value: R_DS(on) drift ≤15 % over −55 to +150 °C junction range maintains consistent efficiency across temperature.

Server VRM

Industrial DC/DC Converter

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, commutated at 500 kHz–1 MHz.

Use Value: 3.8 mΩ R_DS(on) cuts conduction loss by >30 % versus 5.5 mΩ alternatives, reducing heatsink requirements.

Use Scenario: 48 V-to-12 V isolated forward converter in programmable logic controller power supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode.

Use Value: Body diode t_rr ≤60 ns and V_SD ≤1.1 V enable >95 % efficiency at full load without cross-conduction risk.

Telecom Point-of-Load

Automotive Infotainment DC/DC

Use Scenario: Compact 12 V-to-3.3 V buck regulator powering FPGA I/O banks in base station radio units.

IC Role / Device Role / Timing Role: High-side switch with integrated bootstrap gate drive support.

Use Value: 2.8 V V_GS(th) max ensures reliable turn-on using 3.3 V gate drivers, eliminating level-shifting circuitry.

Use Scenario: 12 V-to-5 V non-isolated buck converter for display backlight and audio amplifier rails.

IC Role / Device Role / Timing Role: Low-R_DS(on) power switch operating in automotive ambient (−40 to +105 °C).

Use Value: R_DS(on) drift ≤15 % over −55 to +150 °C junction range maintains consistent efficiency across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 42 nC; SO-8 package	Higher gate charge increases switching loss above 300 kHz	Prefer SI4456DY-T1-GE3 for >500 kHz designs requiring minimal Q_g
DMN3026LSD-13	R_DS(on) = 3.6 mΩ @ 10 V; Q_g = 32 nC; SO-8 package; 30 V rating	Lower V_DS limits use to ≤24 V systems	Select SI4456DY-T1-GE3 for 40 V blocking margin in 36 V nominal inputs

Compared with IRF7470PBF and DMN3026LSD-13, SI4456DY-T1-GE3 delivers optimal balance of 40 V rating, sub-4 mΩ R_DS(on), and 37.5 nC Q_g, making it preferred for high-frequency, high-current synchronous rectification where thermal headroom and gate drive efficiency are critical.

Availability

SI4456DY-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, telecom point-of-load regulators, and automotive infotainment power supplies requiring stable component supply and long-term manufacturability.

Supply support for SI4456DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and performance.

The Si4456DY product line targets high-efficiency power conversion in space-constrained applications, delivering low R_DS(on) and fast switching for synchronous rectification and POL switching.

FAQ

What is the maximum continuous drain current for SI4456DY-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI4456DY-T1-GE3 is 27 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow. SI4456DY-T1-GE3 maintains R_DS(on) stability across this range, ensuring predictable conduction loss.

Does SI4456DY-T1-GE3 support logic-level gate drive?

Yes, SI4456DY-T1-GE3 supports logic-level gate drive with a gate threshold voltage (V_GS(th)) ranging from 1.5 V to 2.8 V. At V_GS = 4.5 V, it achieves R_DS(on) = 4.5 mΩ and supports 31 A continuous current, making it compatible with 3.3 V and 5 V PWM controllers without external level shifters. SI4456DY-T1-GE3's low V_GS(th) upper limit ensures robust turn-on margin.

What is the thermal resistance from junction to foot (R_thJF) for SI4456DY-T1-GE3?

The maximum junction-to-foot thermal resistance (R_thJF) for SI4456DY-T1-GE3 is 16 °C/W under steady-state conditions. This parameter quantifies heat transfer from the silicon die to the exposed drain pad, which must be soldered to a large copper pour for effective thermal management. SI4456DY-T1-GE3's low R_thJF enables higher power handling than standard SO-8 MOSFETs without thermal vias.

Is SI4456DY-T1-GE3 suitable for avalanche operation?

Yes, SI4456DY-T1-GE3 is 100 % UIS (unclamped inductive switching) tested with I_AS = 40 A and E_AS = 80 mJ, confirming ruggedness in inductive load switching. Its avalanche capability allows safe operation in flyback and LLC resonant converters where voltage spikes exceed V_DS. SI4456DY-T1-GE3's guaranteed UIS rating eliminates need for external clamping in many mid-power designs.

What is the body diode reverse recovery time (t_rr) of SI4456DY-T1-GE3?

The body diode reverse recovery time (t_rr) of SI4456DY-T1-GE3 is 38–60 ns at I_F = 13 A, dI/dt = 100 A/µs, and T_J = 25 °C. This fast recovery minimizes switching loss during synchronous rectification transitions and reduces EMI compared to slower diodes. SI4456DY-T1-GE3's t_rr specification is validated across temperature, supporting stable performance in thermally varying environments.

SI4456DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5670 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 7.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4456DY-T1-GE3 FAQ

1.How can I place an order for SI4456DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4456DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4456DY-T1-GE3 reliable?

The price and inventory of SI4456DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4456DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4456DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4456DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4456DY-T1-GE3?

SI4456DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4456DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4456DY-T1-GE3?

For technical support, including SI4456DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4456DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4456DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4456DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4456DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4456DY-T1-GE3?

All SI4456DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4456DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4456DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4456DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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