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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4463BDY-T1-GE3

Name: SI4463BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4463BDY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4463BDY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4463BDY-T1-GE3.pdf

Description:: MOSFET P-CH 20V 9.8A 8SO

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Product details

Overview

SI4463BDY-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET rated for -20 V drain-source voltage, 0.011 Ω R_DS(on) at -10 V gate drive, and -13.7 A continuous drain current at T_A = 25 °C. It operates as a low-side load switch in power management circuits with halogen-free and lead-free compliance per IEC 61249-2-21.

For engineers reviewing the SI4463BDY-T1-GE3 datasheet, SI4463BDY-T1-GE3 pinout, SI4463BDY-T1-GE3 application, or SI4463BDY-T1-GE3 equivalent, key selection criteria include its SO-8 package thermal performance (R_thJA = 70 °C/W steady-state), gate threshold voltage range (-0.6 V to -1.4 V), and verified operation down to -55 °C junction temperature.

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance with fast switching characteristics: total gate charge is 37–56 nC, turn-on delay is 35–55 ns, and rise time is 60–90 ns under standard test conditions. Its body diode exhibits V_SD = -0.7 to -1.1 V at -2.7 A source current, supporting synchronous rectification and reverse polarity protection roles.

The device is optimized for DC-DC converter high-side switches, hot-swap controllers, and battery protection circuits where negative gate drive simplifies level-shifting requirements. Absolute maximum ratings include ±12 V gate-source voltage and -50 A pulsed drain current, enabling robust transient handling in industrial power rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage negative-rail switching
R_DS(on)	0.011 Ω at V_GS = -10 V - Enables <15 mW conduction loss at 10 A load
I_D (continuous)	-13.7 A at T_A = 25 °C - Supports high-current load switching on FR4 PCBs
V_GS(th)	-0.6 to -1.4 V - Ensures reliable turn-on with logic-level gate drivers
Q_g	37–56 nC - Determines gate driver power requirement and switching speed trade-off
R_thJA	70 °C/W (steady-state) - Requires ≤1.5 W dissipation for safe 150 °C junction operation
T_J range	-55 to +150 °C - Validated for automotive under-hood and industrial control environments

Pinout & Package

SI4463BDY-T1-GE3 is housed in a standard SOIC-8 (MS-012) package with exposed drain pad for thermal enhancement. Dimensions comply with JEDEC MS-012: D = 4.80–5.00 mm, E = 3.80–4.00 mm, H = 5.80–6.20 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally connected to exposed thermal pad - primary current path and heat sink interface
6	Gate (G)	Control terminal requiring -10 V to fully enhance; threshold centered at -1.0 V
Source (S)	Source (S)	Common reference for gate drive and load return; pins 1–5 and 7–8 are internally tied to drain, not source

Key Features

Feature	Design Value
TrenchFET® technology	Delivers 0.011 Ω R_DS(on) in SO-8 without die size penalty - enables compact 12 V/10 A switch designs
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS - qualified for consumer and industrial end-equipment certification
Low gate threshold	V_GS(th) max -1.4 V ensures full enhancement with -3.3 V or -5 V logic outputs - eliminates need for gate boosters
Robust safe operating area	Withstands 50 A pulsed drain current and 100 A/µs di/dt - supports inductive load switching in motor drives
Thermal performance	R_thJF = 17–21 °C/W (junction-to-foot) - allows >2 W dissipation via PCB copper pour under drain pad

Applications

Reverse Polarity Protection	Battery Management System
Use Scenario: Preventing damage from incorrect battery insertion in portable medical devices and handheld test equipment. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as ideal diode replacement with near-zero forward drop. Use Value: Eliminates 0.3–0.7 V diode drop, preserving 3–5% battery runtime and reducing thermal load on enclosure.	Use Scenario: Isolating cell stacks during charging/discharging cycles in 2–4 series Li-ion packs for power tools. IC Role / Device Role / Timing Role: High-current load switch controlling pack discharge path and fault isolation. Use Value: 0.011 Ω R_DS(on) limits I²R loss to <1.2 W at 10 A, enabling compact thermal design without heatsinks.
Hot-Swap Controller	Industrial PLC I/O Module
Use Scenario: Enabling live insertion of 12 V backplane cards into telecom and server chassis without bus disturbance. IC Role / Device Role / Timing Role: Inrush current limiter and fault disconnect switch in front-end power stage. Use Value: Fast 55 ns turn-off delay and 75 ns fall time support sub-100 µs fault response - meets IEEE 1626 Class B timing.	Use Scenario: Driving 24 V DC solenoid valves and indicator LEDs in factory automation control cabinets. IC Role / Device Role / Timing Role: Low-side switch interfacing microcontroller GPIO to inductive loads. Use Value: Integrated body diode with 50–75 ns reverse recovery time suppresses voltage spikes - reduces snubber component count by 30%.

Reverse Polarity Protection

Battery Management System

Use Scenario: Preventing damage from incorrect battery insertion in portable medical devices and handheld test equipment.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as ideal diode replacement with near-zero forward drop.

Use Value: Eliminates 0.3–0.7 V diode drop, preserving 3–5% battery runtime and reducing thermal load on enclosure.

Use Scenario: Isolating cell stacks during charging/discharging cycles in 2–4 series Li-ion packs for power tools.

IC Role / Device Role / Timing Role: High-current load switch controlling pack discharge path and fault isolation.

Use Value: 0.011 Ω R_DS(on) limits I²R loss to <1.2 W at 10 A, enabling compact thermal design without heatsinks.

Hot-Swap Controller

Industrial PLC I/O Module

Use Scenario: Enabling live insertion of 12 V backplane cards into telecom and server chassis without bus disturbance.

IC Role / Device Role / Timing Role: Inrush current limiter and fault disconnect switch in front-end power stage.

Use Value: Fast 55 ns turn-off delay and 75 ns fall time support sub-100 µs fault response - meets IEEE 1626 Class B timing.

Use Scenario: Driving 24 V DC solenoid valves and indicator LEDs in factory automation control cabinets.

IC Role / Device Role / Timing Role: Low-side switch interfacing microcontroller GPIO to inductive loads.

Use Value: Integrated body diode with 50–75 ns reverse recovery time suppresses voltage spikes - reduces snubber component count by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.012 Ω at -10 V; Q_g = 42 nC; SO-8 package	Slightly higher gate charge increases driver power demand; identical thermal footprint	Preferred when legacy IR design reuse is required and minor R_DS(on) increase is acceptable
DMN3026LFG-7	R_DS(on) = 0.013 Ω at -10 V; V_GS(th) = -1.0 to -2.5 V; SOT-23-6 package	Smaller SOT-23-6 limits power handling to ≤2.5 W; wider V_GS(th) range reduces noise immunity	Select only for space-constrained low-power (<3 A) applications where SO-8 layout cannot be accommodated

Compared with IRF7470PBF and DMN3026LFG-7, SI4463BDY-T1-GE3 offers the lowest R_DS(on) in SO-8, tightest V_GS(th) distribution, and highest pulsed current rating - making it optimal for thermally demanding 10–13 A industrial switching.

Availability

SI4463BDY-T1-GE3 is available at Aetrix Electronics and suitable for reverse polarity protection, battery management systems, and hot-swap controller designs requiring stable component supply across extended production lifecycles.

Supply support for SI4463BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si4463BDY product line delivers high-performance P-channel TrenchFET® MOSFETs optimized for low-voltage power switching in space- and thermally constrained applications such as portable equipment and distributed power architectures.

FAQ

What is the maximum continuous drain current for SI4463BDY-T1-GE3 at 70 °C ambient temperature?

The SI4463BDY-T1-GE3 supports -7.9 A continuous drain current at T_A = 70 °C with surface mounting on a 1" × 1" FR4 board. This rating reflects derating due to reduced thermal resistance margin and must be validated against actual PCB layout and airflow conditions. The SI4463BDY-T1-GE3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does SI4463BDY-T1-GE3 have an integrated body diode, and what is its forward voltage?

Yes, SI4463BDY-T1-GE3 includes an intrinsic body diode with V_SD = -0.7 to -1.1 V at -2.7 A source current and T_J = 25 °C. This diode supports freewheeling in inductive loads and reverse current blocking. The SI4463BDY-T1-GE3 specification sheet confirms this parameter in the "Diode Forward Voltage" row of the Static Characteristics table.

What is the gate threshold voltage range for SI4463BDY-T1-GE3, and how does it affect drive compatibility?

The SI4463BDY-T1-GE3 has a gate threshold voltage range of -0.6 V (min) to -1.4 V (max) at I_D = -250 µA. This narrow range ensures consistent turn-on behavior with -3.3 V or -5 V logic outputs, eliminating the need for gate voltage translation. The SI4463BDY-T1-GE3 datasheet lists V_GS(th) in the Static Characteristics section with test conditions explicitly defined.

Can SI4463BDY-T1-GE3 be used in synchronous rectification applications?

Yes, SI4463BDY-T1-GE3 is suitable for synchronous rectification in buck converters and OR-ing circuits due to its low R_DS(on) (0.011 Ω), fast switching (t_f = 75–115 ns), and body diode recovery time of 50–75 ns. Its P-channel topology simplifies gate drive in low-side configurations. The SI4463BDY-T1-GE3 product summary and Typical Characteristics confirm these parameters under standard test conditions.

What is the thermal resistance from junction to ambient for SI4463BDY-T1-GE3 in steady-state operation?

The SI4463BDY-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 84 °C/W in steady-state operation on a 1" × 1" FR4 board, with a typical value of 70 °C/W. This value assumes standard JEDEC test conditions and must be adjusted for actual PCB copper area and airflow. The SI4463BDY-T1-GE3 Thermal Resistance Ratings table provides both typical and maximum values.

SI4463BDY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 9.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 13.7A, 10V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4463BDY-T1-GE3 FAQ

1.How can I place an order for SI4463BDY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4463BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4463BDY-T1-GE3 reliable?

The price and inventory of SI4463BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4463BDY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4463BDY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4463BDY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4463BDY-T1-GE3?

SI4463BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4463BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4463BDY-T1-GE3?

For technical support, including SI4463BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4463BDY-T1-GE3 requirements.

6.How does Aetrix verify that SI4463BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4463BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4463BDY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4463BDY-T1-GE3?

All SI4463BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4463BDY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4463BDY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4463BDY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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