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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4465ADY-T1-GE3

Name: SI4465ADY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4465ADY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4465ADY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4465ADY-T1-GE3.pdf

Description:: MOSFET P-CH 8V 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI4465ADY-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -8 V drain-source voltage, 0.009 Ω R_DS(on) at -4.5 V gate drive, and -13.7 A continuous drain current at 25 °C ambient. It operates as a low-voltage logic-level power switch in load switching and battery protection circuits.

For engineers reviewing the SI4465ADY-T1-GE3 datasheet, SI4465ADY-T1-GE3 pinout, SI4465ADY-T1-GE3 application, or SI4465ADY-T1-GE3 equivalent, key selection criteria include its -1.8 V gate threshold, halogen-free and lead-free compliance, SO-8 package thermal performance, and verified R_g test.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with 1.8 V gate drive capability, enabling direct interface with 1.8 V and 2.5 V microcontroller I/Os. Its negative V_GS(th) range (-0.45 V to -1.0 V) ensures reliable turn-on under low-voltage bias conditions.

The MOSFET integrates a body diode with -0.57 V forward voltage at -2.1 A and exhibits 55 nC total gate charge, supporting efficient switching in DC-DC converter synchronous rectification and hot-swap control applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum reverse drain-source blocking voltage for low-side switching in ≤8 V systems
R_DS(on)	0.009 Ω at V_GS = -4.5 V - Enables <100 mW conduction loss at 10 A, critical for thermally constrained PCB layouts
I_D (cont)	-13.7 A at T_A = 25 °C - Supports high-current load switching without forced air or heatsink in SO-8 footprint
V_GS(th)	-0.45 to -1.0 V - Ensures full enhancement with standard 1.8 V logic outputs, eliminating level-shifter requirement
Q_g	55 nC typical - Determines gate driver power demand and switching speed in PWM-controlled power stages
R_thJA	67 °C/W steady-state - Defines maximum power dissipation (≈3.0 W) before junction exceeds 150 °C in still air
V_SD	-0.57 V at I_S = -2.1 A - Low body diode drop improves efficiency in bidirectional current paths and reverse polarity protection

Pinout & Package

SI4465ADY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement. Dimensions conform to JEDEC MS-012: 4.9 mm × 3.9 mm × 1.55 mm height, 1.27 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Internally connected to exposed thermal pad - must be soldered to large copper pour for R_thJF = 15 °C/W performance
6	Gate (G)	Control terminal - requires <3.8 Ω gate resistance to limit ringing; compatible with 1.8 V CMOS drivers
7, 8	Source (S)	Power return path - tied to system ground or battery negative; forms cathode of integrated body diode

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.009 Ω R_DS(on) in SO-8 without die size penalty, enabling higher current density than planar MOSFETs
100 % R_g tested	Guarantees gate resistance ≤3.8 Ω per unit, ensuring consistent turn-on timing and EMI behavior across production lots
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU - suitable for consumer and industrial end-equipment without exemptions
Low V_GS(th)	Turns on fully at -1.0 V, allowing robust operation even with 100 mV gate drive margin degradation over temperature and lifetime
Body diode Q_rr	81 nC reverse recovery charge - minimizes switching losses during freewheeling in synchronous buck converters

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Reverse polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side back-to-back switch to block reverse current and enable/disconnect charging path. Use Value: -1.0 V V_GS(th) ensures full turn-on with battery voltage down to 2.8 V, maintaining protection integrity across discharge cycle.	Use Scenario: Hot-plug current limiting and short-circuit protection for USB 2.0 downstream ports. IC Role / Device Role / Timing Role: Load switch controlling 5 V VBUS delivery with fast fault response via external current sense. Use Value: 55 nC Q_g enables sub-10 µs turn-off with standard gate drivers, meeting USB suspend timing requirements.
Industrial Sensor Node Power Rail	POS Terminal Power Sequencing
Use Scenario: Controlled power-up/down of 3.3 V sensor subsystems in battery-operated IoT edge devices. IC Role / Device Role / Timing Role: Low-voltage load switch isolating MCU peripherals to reduce standby leakage current. Use Value: 1 µA I_DSS at -8 V ensures <10 µW off-state power loss, extending battery life in multi-year deployments.	Use Scenario: Sequenced enablement of 5 V and 12 V rails in point-of-sale terminals with strict power-up order. IC Role / Device Role / Timing Role: Independent rail switch controlled by FPGA GPIOs to meet IPC-2581 sequencing constraints. Use Value: SO-8 footprint allows dense layout with adjacent decoupling capacitors; R_DS(on) stability over -55 to 150 °C ensures reliability across retail environments.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Reverse polarity and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side back-to-back switch to block reverse current and enable/disconnect charging path.

Use Value: -1.0 V V_GS(th) ensures full turn-on with battery voltage down to 2.8 V, maintaining protection integrity across discharge cycle.

Use Scenario: Hot-plug current limiting and short-circuit protection for USB 2.0 downstream ports.

IC Role / Device Role / Timing Role: Load switch controlling 5 V VBUS delivery with fast fault response via external current sense.

Use Value: 55 nC Q_g enables sub-10 µs turn-off with standard gate drivers, meeting USB suspend timing requirements.

Industrial Sensor Node Power Rail

POS Terminal Power Sequencing

Use Scenario: Controlled power-up/down of 3.3 V sensor subsystems in battery-operated IoT edge devices.

IC Role / Device Role / Timing Role: Low-voltage load switch isolating MCU peripherals to reduce standby leakage current.

Use Value: 1 µA I_DSS at -8 V ensures <10 µW off-state power loss, extending battery life in multi-year deployments.

Use Scenario: Sequenced enablement of 5 V and 12 V rails in point-of-sale terminals with strict power-up order.

IC Role / Device Role / Timing Role: Independent rail switch controlled by FPGA GPIOs to meet IPC-2581 sequencing constraints.

Use Value: SO-8 footprint allows dense layout with adjacent decoupling capacitors; R_DS(on) stability over -55 to 150 °C ensures reliability across retail environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SI4475ADY-T1-GE3	R_DS(on) = 0.0065 Ω at -4.5 V, but V_DS = -6 V - lower on-resistance at cost of reduced voltage rating	Better suited for ≤6 V systems requiring minimal conduction loss; not recommended for 8 V battery backup rails	Select when system V_DS stress stays below 6 V and R_DS(on) reduction justifies tighter voltage margin
DMN2013LFG-7	R_DS(on) = 0.012 Ω at -4.5 V, SOT-23-6 package - smaller footprint but higher thermal resistance (R_thJA = 150 °C/W)	Preferred for space-constrained portable designs where 3.0 W dissipation is not required	Choose for ultra-compact layouts with <2 A continuous loads; avoid for >1 A sustained current due to thermal derating

Compared with SI4465ADY-T1-GE3, SI4475ADY-T1-GE3 offers lower conduction loss in 6 V systems but sacrifices voltage headroom, while DMN2013LFG-7 trades thermal performance for miniaturization - making SI4465ADY-T1-GE3 optimal for balanced 8 V, medium-power, thermally managed applications.

Availability

SI4465ADY-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, and industrial sensor node power rails requiring stable component supply and long-term manufacturability.

Supply support for SI4465ADY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, thermally optimized packaging.

The Si4465ADY product line delivers logic-level P-channel MOSFETs for low-voltage power switching in portable and energy-sensitive applications, targeting design-in simplicity and board-level thermal efficiency.

FAQ

What is the maximum continuous drain current for SI4465ADY-T1-GE3 at 70 °C ambient temperature?

The SI4465ADY-T1-GE3 supports -11 A continuous drain current at 70 °C ambient temperature, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package without additional heatsinking. At case temperature of 70 °C, the rating increases to -16 A, confirming its suitability for thermally coupled PCB layouts.

Does SI4465ADY-T1-GE3 require a gate resistor for ESD protection?

SI4465ADY-T1-GE3 does not require an external gate resistor solely for ESD protection, as it features built-in gate oxide protection structures. However, a series gate resistor (typically 2.5–10 Ω) is recommended to dampen ringing during fast switching and limit peak gate current from drivers - especially critical given its measured R_g of 2.5–3.8 Ω and 55 nC Q_g.

Can SI4465ADY-T1-GE3 be used in a synchronous buck converter as the high-side switch?

No, SI4465ADY-T1-GE3 is a P-channel MOSFET and is not suitable as a high-side switch in standard synchronous buck topologies, which require N-channel devices with bootstrap or isolated gate drive. It is appropriate as a low-side synchronous rectifier or high-side switch in buck-derived topologies like active clamp or certain load-switch configurations where gate drive relative to source is feasible.

What is the body diode forward voltage of SI4465ADY-T1-GE3 at -2.1 A?

The body diode forward voltage of SI4465ADY-T1-GE3 is -0.57 V (typical) at -2.1 A and 25 °C, as specified in the Diode Forward Voltage parameter. This value increases to approximately -1.2 V at maximum rating, and the diode exhibits 81 nC reverse recovery charge - relevant for freewheeling efficiency in DC-DC applications.

Is SI4465ADY-T1-GE3 qualified for automotive applications?

SI4465ADY-T1-GE3 is not AEC-Q101 qualified and is intended for industrial, computing, and consumer applications. While its operating junction temperature range (-55 to 150 °C) meets automotive ambient requirements, Vishay does not list it in their AEC-Q101 qualified MOSFET portfolio, and no automotive-specific reliability testing data is published for this part number.

SI4465ADY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 13.7A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 14A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 6.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4465ADY-T1-GE3 FAQ

1.How can I place an order for SI4465ADY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4465ADY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4465ADY-T1-GE3 reliable?

The price and inventory of SI4465ADY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4465ADY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4465ADY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4465ADY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4465ADY-T1-GE3?

SI4465ADY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4465ADY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4465ADY-T1-GE3?

For technical support, including SI4465ADY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4465ADY-T1-GE3 requirements.

6.How does Aetrix verify that SI4465ADY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4465ADY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4465ADY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4465ADY-T1-GE3?

All SI4465ADY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4465ADY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4465ADY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4465ADY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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