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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4472DY-T1-E3

Name: SI4472DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4472DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4472DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4472DY-T1-E3.pdf

Description:: MOSFET N-CH 150V 7.7A 8SO

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Product details

Overview

SI4472DY-T1-E3 from Vishay Siliconix is an N-channel 150 V (D-S) MOSFET in SO-8 package, rated for 7.7 A continuous drain current at T_C = 25 °C, with R_DS(on) = 0.045 Ω at V_GS = 10 V and total gate charge Q_g = 23 nC (typ.) - optimized for primary-side switching in offline SMPS.

For engineers reviewing the SI4472DY-T1-E3 datasheet, SI4472DY-T1-E3 pinout, SI4472DY-T1-E3 application, or SI4472DY-T1-E3 equivalent, key selection criteria include its low Q_gd for reduced switching loss, 100 % R_g and avalanche testing, and Pb-free/halogen-free compliance per IEC 61249-2-21 and RoHS 2002/95/EC.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(on) and minimized gate-drain charge (Q_gd), directly reducing turn-off energy and improving hard-switching efficiency. Its 150 V V_DS rating supports universal-input flyback and LLC resonant converters operating up to 400 V DC bus.

The device features a robust body diode with t_rr = 63–95 ns and Q_rr = 110–165 nC, enabling reliable synchronous rectification or freewheeling in discontinuous conduction mode (DCM) topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports 400 V DC link with 25 % margin for voltage spikes in offline power supplies
R_DS(on)	0.045 Ω @ V_GS = 10 V - limits conduction loss to ≤ 1.75 W at 7.7 A, enabling compact thermal design
I_D (cont.)	7.7 A @ T_C = 25 °C - defines maximum steady-state current under heatsink-cooled conditions
Q_g	23 nC (typ.) @ V_GS = 8 V - determines gate driver power requirement and switching speed in 100–500 kHz SMPS
t_rr	63 ns (typ.) - enables clean turn-on of synchronous rectifiers with minimal shoot-through risk
R_thJA	40 °C/W (max) - sets minimum PCB copper area (1" × 1" FR4) needed to hold T_J ≤ 150 °C at 3.1 W ambient dissipation
V_GS(th)	2.5–4.5 V - ensures reliable enhancement-mode turn-on with standard 5 V or 10 V gate drivers

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement; 100 % R_g and avalanche tested; Pb-free and halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥ 10 V for full enhancement; low R_g (0.85–1.3 Ω) minimizes gate ringing
2, 3, 4	Source	Power return path; tied to internal substrate; three pins reduce source inductance in high-di/dt switching
5, 6, 7, 8	Drain	Main power output; connected to exposed thermal pad; multiple pins lower resistance and improve heat spreading

Key Features

Feature	Design Value
Extremely low Q_gd	6.5 nC (typ.) - reduces Miller-induced turn-off delay and improves EMI in hard-switched converters
100 % R_g tested	Guarantees gate resistance between 0.85–1.3 Ω - ensures consistent gate drive timing across production lots
100 % avalanche tested	IAS = 20 A, EAS = 20 mJ - validates ruggedness against inductive switching transients without external clamping
Low C_iss/C_oss ratio	C_iss = 1735 pF, C_oss = 160 pF - supports ZVS operation in resonant topologies by minimizing capacitive losses

Applications

Offline Flyback Converter	LLC Resonant Converter
Use Scenario: Primary-side switch in 30–100 W universal-input AC/DC adapters for consumer electronics. IC Role / Device Role / Timing Role: High-voltage power switch driven by PWM controller (e.g., UC384x) at 65–130 kHz. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >88 % efficiency at full load without active cooling.	Use Scenario: Upper-side switch in half-bridge LLC resonant tank for server PSUs and LED drivers. IC Role / Device Role / Timing Role: Hard-commutated switch synchronized to zero-voltage switching transitions. Use Value: Low Q_gd and fast t_rr minimize dead-time losses and improve ZVS window margin at 200–500 kHz.
DC-DC Isolated Buck	Industrial Motor Drive Inverter Stage
Use Scenario: Primary switch in isolated 48 V input DC-DC modules for telecom and datacom systems. IC Role / Device Role / Timing Role: Fast-switching MOSFET controlled by isolated gate driver (e.g., Si823x) at 200–300 kHz. Use Value: Robust avalanche rating and low C_oss ensure reliability during bus overvoltage events and reduce snubber losses.	Use Scenario: Low-side switch in 3-phase inverter half-bridge for 24–48 V BLDC motor control in factory automation. IC Role / Device Role / Timing Role: Synchronous freewheeling path with body diode conducting during PWM off-time. Use Value: Low V_SD (0.77–1.2 V) and fast t_rr reduce reverse recovery loss and prevent cross-conduction in high-frequency PWM.

Offline Flyback Converter

LLC Resonant Converter

Use Scenario: Primary-side switch in 30–100 W universal-input AC/DC adapters for consumer electronics.

IC Role / Device Role / Timing Role: High-voltage power switch driven by PWM controller (e.g., UC384x) at 65–130 kHz.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >88 % efficiency at full load without active cooling.

Use Scenario: Upper-side switch in half-bridge LLC resonant tank for server PSUs and LED drivers.

IC Role / Device Role / Timing Role: Hard-commutated switch synchronized to zero-voltage switching transitions.

Use Value: Low Q_gd and fast t_rr minimize dead-time losses and improve ZVS window margin at 200–500 kHz.

DC-DC Isolated Buck

Industrial Motor Drive Inverter Stage

Use Scenario: Primary switch in isolated 48 V input DC-DC modules for telecom and datacom systems.

IC Role / Device Role / Timing Role: Fast-switching MOSFET controlled by isolated gate driver (e.g., Si823x) at 200–300 kHz.

Use Value: Robust avalanche rating and low C_oss ensure reliability during bus overvoltage events and reduce snubber losses.

Use Scenario: Low-side switch in 3-phase inverter half-bridge for 24–48 V BLDC motor control in factory automation.

IC Role / Device Role / Timing Role: Synchronous freewheeling path with body diode conducting during PWM off-time.

Use Value: Low V_SD (0.77–1.2 V) and fast t_rr reduce reverse recovery loss and prevent cross-conduction in high-frequency PWM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF15	R_DS(on) = 0.12 Ω @ 10 V; Q_g = 25 nC; TO-220 package	Higher conduction loss; through-hole mounting; no integrated thermal pad	Prefer when board-level heatsinking is available and layout allows larger footprint
IRF640NPBF	R_DS(on) = 0.18 Ω @ 10 V; Q_g = 47 nC; TO-220 package	Lower voltage rating (200 V); significantly higher switching loss; legacy planar process	Select only if cost sensitivity outweighs efficiency and thermal performance requirements

Compared with STP16NF15 and IRF640NPBF, SI4472DY-T1-E3 delivers 2.7× lower R_DS(on), 2× lower Q_g, and SO-8 surface-mount integration - enabling higher power density, better thermal management via PCB copper, and compatibility with automated assembly.

Availability

SI4472DY-T1-E3 is available at Aetrix Electronics and suitable for offline SMPS, LLC resonant converters, isolated DC-DC modules, and industrial motor drive inverters requiring stable component supply and Pb-free compliance.

Supply support for SI4472DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The Si4472DY product line targets high-efficiency, high-voltage switching in compact AC/DC and isolated DC/DC converters - emphasizing low Q_gd, rugged avalanche capability, and thermally enhanced SO-8 packaging.

FAQ

What is the maximum continuous drain current rating for SI4472DY-T1-E3 at case temperature of 70 °C?

The SI4472DY-T1-E3 supports 6.1 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under constrained heatsinking conditions. The value is measured with the device mounted on a 1" × 1" FR4 board and accounts for junction-to-case thermal resistance (R_thJC = 17–21 °C/W). Designers must verify PCB copper area and airflow to maintain T_C ≤ 70 °C at full load.

Does SI4472DY-T1-E3 have a fully characterized body diode for synchronous rectification?

Yes, SI4472DY-T1-E3 includes a fully characterized intrinsic body diode with V_SD = 0.77–1.2 V at I_S = 2.6 A and t_rr = 63–95 ns at I_F = 5 A, dI/dt = 100 A/µs, and T_J = 25 °C. Q_rr is specified as 110–165 nC. These parameters enable accurate modeling of reverse recovery loss in DCM flyback or active clamp forward converters where the body diode conducts during dead time.

Is SI4472DY-T1-E3 suitable for use in automotive applications?

SI4472DY-T1-E3 is not AEC-Q101 qualified and lacks automotive-grade screening, temperature range extension beyond -55 to +150 °C, or PPAP documentation. While its absolute maximum ratings and thermal performance meet some under-hood environmental demands, Vishay does not specify it for automotive safety-critical or mission-critical systems. For automotive applications, consult Vishay's AEC-Q101-qualified SiH series or equivalent alternatives.

What is the gate threshold voltage range for SI4472DY-T1-E3, and how does it affect drive circuit design?

The gate threshold voltage V_GS(th) for SI4472DY-T1-E3 is 2.5–4.5 V at I_D = 250 µA. This range ensures reliable turn-on with standard 5 V logic-level drivers while preventing accidental activation from noise. To achieve full R_DS(on) specification (0.045 Ω), V_GS must be ≥ 10 V. Gate drivers should therefore provide ≥ 12 V rail with sufficient peak current (>1 A) to charge Q_g = 23 nC within required switching times.

How does the SO-8 package of SI4472DY-T1-E3 compare thermally to TO-220 alternatives?

The SO-8 package of SI4472DY-T1-E3 achieves R_thJA = 40 °C/W (max) on 1" × 1" FR4, versus ~62 °C/W for standard TO-220 on same board. Its exposed drain pad enables direct thermal coupling to inner-layer copper planes, yielding effective R_thJC = 17–21 °C/W - comparable to TO-220 with heatsink. This makes SI4472DY-T1-E3 more suitable for space-constrained, high-power-density designs where PCB-based thermal management replaces mechanical heatsinks.

SI4472DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1735 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 5.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4472DY-T1-E3 FAQ

1.How can I place an order for SI4472DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4472DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4472DY-T1-E3 reliable?

The price and inventory of SI4472DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4472DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4472DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4472DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4472DY-T1-E3?

SI4472DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4472DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4472DY-T1-E3?

For technical support, including SI4472DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4472DY-T1-E3 requirements.

6.How does Aetrix verify that SI4472DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4472DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4472DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4472DY-T1-E3?

All SI4472DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4472DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4472DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4472DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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