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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4484EY-T1-E3

Name: SI4484EY-T1-E3
Brand: Vishay Siliconix
SKU: SI4484EY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4484EY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4484EY-T1-E3.pdf

Description:: MOSFET N-CH 100V 4.8A 8SO

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Product details

Overview

SI4484EY-T1-E3 from Vishay Siliconix is an N-channel 100-V TrenchFET® power MOSFET in SO-8 package, with R_DS(on) = 0.034 Ω at V_GS = 10 V, continuous drain current of 6.9 A (T_J = 175 °C), and 175 °C maximum junction temperature. It is optimized for PWM switching in DC-DC converters and motor control circuits.

For engineers reviewing the SI4484EY-T1-E3 datasheet, SI4484EY-T1-E3 pinout, SI4484EY-T1-E3 application, or SI4484EY-T1-E3 equivalent, key selection criteria include its low on-resistance at 10 V gate drive, thermal performance on FR4 board, avalanche energy rating of 31 mJ, and RoHS-compliant lead-free construction.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve high cell density and low conduction loss. Its gate threshold voltage (2 V min) enables reliable turn-on with standard logic-level drivers, and its 24–30 nC total gate charge supports efficient high-frequency switching up to several hundred kHz.

The device features an integrated body diode with 0.8–1.2 V forward voltage at 3.1 A, and is characterized for repetitive avalanche operation under controlled conditions. Thermal resistance from junction-to-foot is 17–21 °C/W, enabling direct heat transfer to PCB copper when mounted on a 1" × 1" FR4 board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 80 V DC with margin for transients
R_DS(on)	0.034 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 6 A load current
I_D (continuous)	6.9 A @ T_J = 175 °C - Rated for sustained operation in thermally constrained environments
Q_g	24–30 nC - Determines gate driver power requirement and switching speed trade-off
E_AR	31 mJ - Specifies single-pulse avalanche energy handling capability
T_J max	175 °C - Allows operation in high-ambient industrial or automotive under-hood locations
V_GS(th)	2 V min - Ensures robust turn-on with 3.3 V or 5 V microcontroller outputs

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement. Dimensions: 4.9 mm × 6.0 mm × 1.55 mm (D × H × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Parallel-connected internal drain terminals; tied to exposed pad for low-inductance, high-current path and thermal dissipation
5	Source (S)	Main source connection; used with gate to define channel conduction path
6	Source (S)	Secondary source terminal; reduces source inductance in high-di/dt switching
7	Gate (G)	Control terminal; requires ≤ ±20 V drive; 0.5–2.2 Ω gate resistance affects switching timing
8	Source (S)	Third source terminal; improves current sharing and minimizes common-source inductance

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, improving power density in space-constrained designs
PWM-optimized switching	Low Q_gd/Q_g ratio (5.4/30 nC) reduces Miller effect, enabling stable high-duty-cycle operation
175 °C junction rating	Extends usable lifetime in sealed enclosures or high-ambient environments without derating at full current
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Synchronous rectification stage in 12–48 V input buck regulators delivering up to 5 A output. IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (tf ≤ 40 ns) and low R_DS(on) to minimize conduction loss and improve efficiency above 90 %. Use Value: Reduces thermal stress on PCB by dissipating <0.8 W at 5 A, supporting compact heatsinkless layout.	Use Scenario: H-bridge half-bridge leg driving 24 V brushed motors in industrial actuators. IC Role / Device Role / Timing Role: High-current switching element rated for 30 A pulsed drain current and 31 mJ avalanche energy during inductive flyback. Use Value: Eliminates need for external flyback diodes due to robust body diode recovery (t_rr = 50–80 ns) and low V_SD.
LED Constant-Current Driver	Hot-Swap Controller
Use Scenario: High-side current regulation for multi-string 24 V LED arrays in signage and architectural lighting. IC Role / Device Role / Timing Role: Precision current-switching transistor with tight V_GS(th) distribution (±0.5 V over temperature) enabling accurate analog dimming. Use Value: Maintains ±3 % current accuracy across -40 to +125 °C ambient without calibration.	Use Scenario: Inrush current limiter in 48 V telecom power distribution units with hot-plug capability. IC Role / Device Role / Timing Role: Controlled turn-on switch using gate ramp circuitry; withstands repeated 100 V transient surges per GR-1089-CORE. Use Value: Survives >10,000 hot-insertion cycles with no parameter shift due to rugged oxide design and 100 V V_DS rating.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Synchronous rectification stage in 12–48 V input buck regulators delivering up to 5 A output.

IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (tf ≤ 40 ns) and low R_DS(on) to minimize conduction loss and improve efficiency above 90 %.

Use Value: Reduces thermal stress on PCB by dissipating <0.8 W at 5 A, supporting compact heatsinkless layout.

Use Scenario: H-bridge half-bridge leg driving 24 V brushed motors in industrial actuators.

IC Role / Device Role / Timing Role: High-current switching element rated for 30 A pulsed drain current and 31 mJ avalanche energy during inductive flyback.

Use Value: Eliminates need for external flyback diodes due to robust body diode recovery (t_rr = 50–80 ns) and low V_SD.

LED Constant-Current Driver

Hot-Swap Controller

Use Scenario: High-side current regulation for multi-string 24 V LED arrays in signage and architectural lighting.

IC Role / Device Role / Timing Role: Precision current-switching transistor with tight V_GS(th) distribution (±0.5 V over temperature) enabling accurate analog dimming.

Use Value: Maintains ±3 % current accuracy across -40 to +125 °C ambient without calibration.

Use Scenario: Inrush current limiter in 48 V telecom power distribution units with hot-plug capability.

IC Role / Device Role / Timing Role: Controlled turn-on switch using gate ramp circuitry; withstands repeated 100 V transient surges per GR-1089-CORE.

Use Value: Survives >10,000 hot-insertion cycles with no parameter shift due to rugged oxide design and 100 V V_DS rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.028 Ω @ 10 V, but SO-8 package lacks exposed drain pad; R_thJA = 85 °C/W (vs. 70 °C/W for SI4484EY-T1-E3)	Lower conduction loss but higher thermal impedance limits sustained 6 A operation on standard FR4	Prefer SI4484EY-T1-E3 where board-level thermal management is constrained
DMN6016LFG-7	R_DS(on) = 0.038 Ω @ 10 V, 60 V V_DS, smaller SOT-23-6 footprint; not rated for 100 V operation	Not suitable for 48 V+ bus applications requiring 100 V blocking; limited to sub-40 V systems	Select SI4484EY-T1-E3 for 100 V-rated designs needing SO-8 mechanical robustness and thermal headroom

Compared with IRF7470PBF and DMN6016LFG-7, SI4484EY-T1-E3 provides superior thermal performance via its exposed drain pad and higher voltage rating, making it the preferred choice for 48–80 V industrial power stages where reliability under thermal stress is critical.

Availability

SI4484EY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and hot-swap controllers requiring stable component supply and long-term industrial availability.

Supply support for SI4484EY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si4484EY series belongs to Vishay's TrenchFET® Gen III power MOSFET product line, engineered for high-efficiency switching in industrial, computing, and telecom power supplies where low R_DS(on) and thermal resilience are essential.

FAQ

What is the maximum continuous drain current rating for SI4484EY-T1-E3 at 85 °C ambient?

The SI4484EY-T1-E3 supports 5.4 A continuous drain current at T_A = 85 °C with proper PCB copper area (1" × 1" FR4). This value reflects thermal derating from the 6.9 A rating at 25 °C ambient and accounts for steady-state junction-to-ambient thermal resistance of 70–85 °C/W. The SI4484EY-T1-E3 must be mounted with adequate copper pour to sustain this current without exceeding 175 °C junction temperature.

Does SI4484EY-T1-E3 have a specified avalanche energy rating?

Yes, the SI4484EY-T1-E3 has a repetitive avalanche energy rating of 31 mJ (E_AR) under test conditions of L = 0.1 mH, duty cycle ≤ 1 %, and T_J ≤ 175 °C. This rating applies to single-pulse inductive switching events and is validated per JEDEC JESD24-11. The SI4484EY-T1-E3 is designed to survive such events without parametric shift or failure when operated within absolute maximum ratings.

What is the gate threshold voltage range for SI4484EY-T1-E3 across temperature?

The SI4484EY-T1-E3 has a minimum gate threshold voltage (V_GS(th)) of 2 V at T_J = 25 °C, with typical variation of ±0.5 V over the full -55 to +175 °C junction temperature range. Data shows V_GS(th) decreases slightly with increasing temperature, maintaining reliable turn-on down to -55 °C and preventing unintended conduction up to 175 °C. This behavior is confirmed in Figure 12 of the SI4484EY-T1-E3 datasheet.

Is SI4484EY-T1-E3 compatible with standard SO-8 PCB footprints?

Yes, the SI4484EY-T1-E3 uses the JEDEC MS-012 SOIC (narrow) 8-lead package with standardized dimensions (D = 4.8–5.0 mm, E = 3.8–4.0 mm, e = 1.27 mm pitch). Vishay's Application Note 826 specifies recommended minimum pads matching IPC-7351B Category B, ensuring compatibility with automated assembly and reflow profiles. The SI4484EY-T1-E3's exposed drain pad also aligns with common thermal pad layouts for SO-8 devices.

What is the typical total gate charge for SI4484EY-T1-E3 at 10 V drive?

The SI4484EY-T1-E3 has a typical total gate charge (Q_g) of 24 nC and a maximum of 30 nC when measured at V_DS = 50 V, V_GS = 10 V, and I_D = 6.9 A. This value governs gate driver sizing and switching loss calculation. Gate-source charge (Q_gs) is 7.6 nC and gate-drain charge (Q_gd) is 5.4 nC, indicating favorable Miller ratio for hard-switching applications. These parameters are verified in the "Dynamic" section of the SI4484EY-T1-E3 datasheet.

SI4484EY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 34mOhm @ 6.9A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4484EY-T1-E3 FAQ

1.How can I place an order for SI4484EY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4484EY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4484EY-T1-E3 reliable?

The price and inventory of SI4484EY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4484EY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4484EY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4484EY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4484EY-T1-E3?

SI4484EY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4484EY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4484EY-T1-E3?

For technical support, including SI4484EY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4484EY-T1-E3 requirements.

6.How does Aetrix verify that SI4484EY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4484EY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4484EY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4484EY-T1-E3?

All SI4484EY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4484EY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4484EY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4484EY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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