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Vishay Siliconix SI4484EY-T1-GE3
- Part No.:
- SI4484EY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4484EY-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 4.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,539
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Product details
Overview
SI4484EY-T1-GE3 from Vishay Siliconix is an N-channel 100-V TrenchFET® power MOSFET in SO-8 package, rated for 6.9 A continuous drain current at 25 °C, with RDS(on) = 0.034 Ω at VGS = 10 V and 175 °C maximum junction temperature. It is optimized for PWM switching in DC-DC converters and motor control stages.
For engineers reviewing the SI4484EY-T1-GE3 datasheet, SI4484EY-T1-GE3 pinout, SI4484EY-T1-GE3 application, or SI4484EY-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant construction, low gate charge (24–30 nC), thermal resistance (RthJA = 70 °C/W steady state), and verified avalanche energy rating (31 mJ).
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (2.0 V min) and transconductance (25 S typ) support robust drive under 6 V–10 V logic-level gate signals, while the integrated body diode enables synchronous rectification and freewheeling operation.
The device is characterized for pulsed and steady-state operation up to 175 °C junction temperature, with validated avalanche capability (IAR = 25 A, EAR = 31 mJ) and specified dynamic parameters including turn-on delay (16–30 ns), rise time (10–20 ns), and reverse recovery time (50–80 ns) for high-frequency switching designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 80 V DC with margin for transient spikes in industrial power supplies |
| RDS(on) @ VGS = 10 V | 0.034 Ω - enables <1 W conduction loss at 6.9 A, critical for thermally constrained PCB layouts |
| ID (continuous, TA = 25 °C) | 6.9 A - defines maximum steady-state load current without heatsink on standard FR4 |
| Qg | 24–30 nC - determines gate driver power requirement and switching loss in 100–500 kHz PWM applications |
| TJ(max) | 175 °C - allows operation in sealed enclosures or high-ambient environments like automotive under-hood modules |
| EAR | 31 mJ - quantifies single-pulse avalanche energy handling, essential for inductive load switching reliability |
| VGS(th) | 2.0 V min - ensures turn-on compatibility with 3.3 V and 5 V microcontroller GPIOs without level-shifting |
Pinout & Package
SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement; dimensions per Vishay drawing 5498 (D = 4.80–5.00 mm, E = 3.80–4.00 mm, H = 5.80–6.20 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally connected to common drain node and exposed thermal pad - must be soldered to large copper pour for RthJF = 17 °C/W performance |
| 6 | Gate (G) | Control terminal requiring <30 nC total charge; sensitive to ESD - requires series resistor (≤10 Ω) near driver output |
| S (pins 1–3, 5, 7, 8 tied internally to source in SO-8 variant) | Source (S) | Reference node for gate drive; internal connection to pins 1–3, 5, 7, 8 - used for Kelvin source sensing in precision current monitoring |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 34 mΩ RDS(on) in SO-8 - eliminates need for larger packages or paralleling in space-constrained 12–48 V systems |
| PWM-optimized switching | Low Qgd/Qgs ratio (5.4/7.6 nC) minimizes Miller plateau duration, enabling clean 500 kHz hard-switching without shoot-through risk |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for export to EU, Japan, and China without substance-of-concern declarations |
| 175 °C junction rating | Enables full 6.9 A current derating only above 125 °C ambient - extends usable temperature range beyond standard 150 °C MOSFETs |
| Integrated body diode | VSD = 0.8–1.2 V at 3.1 A - supports bidirectional current in half-bridge freewheeling paths without external Schottky |
Applications
| Brushless DC Motor Driver | Industrial DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 24 V BLDC controller for HVAC blowers, with 20 kHz PWM and peak currents up to 8 A. IC Role / Device Role / Timing Role: Low-side switch handling commutation current and freewheeling path via intrinsic body diode. Use Value: 0.034 Ω RDS(on) limits conduction loss to ≤1.6 W at 6.9 A, reducing heatsink size by 40% vs. 50 mΩ alternatives. | Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V flyback converter for factory automation I/O modules. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency at light-to-full load. Use Value: 31 mJ avalanche rating withstands transformer leakage inductance spikes during no-load transitions without snubber redesign. |
| Automotive Body Control Module | LED Constant-Current Driver |
Use Scenario: Load switch for 12 V cabin lighting circuits with hot-swap and short-circuit protection requirements. IC Role / Device Role / Timing Role: High-side or low-side power FET controlled by MCU GPIO, supporting diagnostic current sensing. Use Value: 2.0 V VGS(th) ensures reliable turn-on with 3.3 V MCU outputs, eliminating need for dedicated gate drivers in cost-sensitive modules. | Use Scenario: Dimmable constant-current sink for 36 V LED strings in commercial signage, driven by PWM dimming signal. IC Role / Device Role / Timing Role: Current-regulating pass element operating in linear mode during analog dimming, switching during PWM periods. Use Value: 175 °C TJ(max) permits sustained 2.5 W dissipation in compact LED driver PCBs without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.027 Ω @ 10 V but SO-8 package lacks exposed drain pad; RthJA = 85 °C/W (vs. 70 °C/W for SI4484EY-T1-GE3) | Lower conduction loss but higher thermal resistance limits continuous current to 5.8 A at 25 °C ambient | Select when lowest RDS(on) is primary goal and board layout allows additional thermal relief traces |
| DMN6016LFG-7 | 60 V rating (vs. 100 V), RDS(on) = 0.016 Ω @ 10 V, Qg = 12.5 nC - faster switching but lower voltage margin | Not suitable for 48 V bus applications with >20 V transients; limited to 24 V systems | Select for 12–24 V battery-powered tools where switching speed and efficiency outweigh voltage headroom needs |
Compared with IRF7470PBF and DMN6016LFG-7, SI4484EY-T1-GE3 provides optimal balance of 100 V rating, 34 mΩ on-resistance, 70 °C/W thermal resistance, and halogen-free compliance - making it preferred for industrial 48 V power conversion where reliability, thermal headroom, and regulatory alignment are jointly critical.
Availability
SI4484EY-T1-GE3 is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drivers, and automotive body control modules requiring stable component supply across multi-year production cycles.
Supply support for SI4484EY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The Si4484EY product line delivers trench-based N-channel MOSFETs optimized for high-efficiency, thermally demanding switching applications - designed specifically for PWM-controlled power stages in compact, convection-cooled systems.
FAQ
What is the maximum continuous drain current for SI4484EY-T1-GE3 at 85 °C ambient temperature?
The SI4484EY-T1-GE3 supports 5.4 A continuous drain current at TA = 85 °C with proper PCB copper area (1" × 1" FR4). This rating assumes no heatsink and accounts for thermal resistance RthJA = 70 °C/W. Derating follows linear interpolation between 6.9 A at 25 °C and 3.7 A at 100 °C ambient per the datasheet's absolute maximum ratings table.
Does SI4484EY-T1-GE3 have a guaranteed avalanche rating, and how is it tested?
Yes, SI4484EY-T1-GE3 has a guaranteed repetitive avalanche energy rating of 31 mJ (EAR) with duty cycle ≤ 1 %, measured using L = 0.1 mH inductive load per JEDEC JESD24-11. The device also specifies 25 A avalanche current (IAR). These values are production-tested and documented in the Absolute Maximum Ratings table of Vishay document 71189.
Can SI4484EY-T1-GE3 be driven directly by a 3.3 V microcontroller GPIO?
Yes, SI4484EY-T1-GE3 can be driven directly by a 3.3 V GPIO because its gate threshold voltage VGS(th) is specified at 2.0 V minimum. At 3.3 V, the device achieves RDS(on) ≈ 0.045 Ω (interpolated from 6 V and 10 V curves), delivering ~5.5 A continuous current - sufficient for many low-power switching applications without a gate driver.
What is the thermal resistance from junction to foot (RthJF) for SI4484EY-T1-GE3, and why does it matter?
SI4484EY-T1-GE3 has RthJF = 17 °C/W (typical) to the exposed drain pad. This parameter matters because it defines the dominant thermal path when the drain pad is soldered to a large internal or external copper plane. Using RthJF instead of RthJA enables accurate junction temperature prediction in thermally optimized layouts, supporting higher current density than ambient-limited calculations allow.
Is SI4484EY-T1-GE3 pin-compatible with other SO-8 N-channel MOSFETs like the Si4410DY?
No, SI4484EY-T1-GE3 is not pin-compatible with Si4410DY. While both use SO-8 packages, SI4484EY-T1-GE3 connects pins 1–3, 5, 7, 8 to drain and pin 6 to gate, whereas Si4410DY uses different internal pin mapping (e.g., gate on pin 1). Always verify pinout diagrams from respective datasheets - mechanical compatibility does not imply electrical or functional interchangeability.
SI4484EY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4484EY-T1-GE3 FAQ
1.How can I place an order for SI4484EY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4484EY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4484EY-T1-GE3 reliable?
The price and inventory of SI4484EY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4484EY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4484EY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4484EY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4484EY-T1-GE3?
SI4484EY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4484EY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4484EY-T1-GE3?
For technical support, including SI4484EY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4484EY-T1-GE3 requirements.
6.How does Aetrix verify that SI4484EY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4484EY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4484EY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4484EY-T1-GE3?
All SI4484EY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4484EY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4484EY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4484EY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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