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Vishay Siliconix SI4486EY-T1-E3
- Part No.:
- SI4486EY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4486EY-T1-E3.pdf
- Description:
- MOSFET N-CH 100V 5.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,718
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Product details
Overview
SI4486EY-T1-E3 from Vishay Siliconix is an N-channel 100-V TrenchFET® power MOSFET in SO-8 package, rated for 7.9 A continuous drain current at 25 °C, with RDS(on) = 0.025 Ω at VGS = 10 V and 175 °C maximum junction temperature. It is optimized for PWM switching in DC-DC converters and motor control circuits.
For engineers reviewing the SI4486EY-T1-E3 datasheet, SI4486EY-T1-E3 pinout, SI4486EY-T1-E3 application, or SI4486EY-T1-E3 equivalent, key selection criteria include its 100-V VDS, low gate charge (Qg = 44 nC max), SO-8 thermal performance (RthJA = 85 °C/W steady-state), and compliance with RoHS and halogen-free standards.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qgd/Qgs ratio (8.6 nC / 10 nC). Its 175 °C rated junction temperature enables operation in thermally constrained industrial and automotive environments without derating below 85 °C ambient.
The device features a built-in body diode with VSD = 1.2 V max at IS = 3.1 A and trr = 80 ns, supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Gate threshold voltage is tightly specified at 2 V min, ensuring reliable turn-on with standard 5-V or 3.3-V logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 80 V DC with margin for transients in industrial power supplies |
| RDS(on) @ VGS = 10 V | 0.025 Ω max - limits conduction loss to ≤1.6 W at 8 A, enabling high-efficiency 12–48 V systems |
| ID (continuous, TA = 25 °C) | 7.9 A - delivers full-rated current on standard 1" × 1" FR4 PCB without heatsink |
| Qg | 44 nC max - reduces gate drive power and enables >500 kHz PWM operation with low-Rg drivers |
| TJ max | 175 °C - allows sustained operation in sealed enclosures or under airflow-limited conditions |
| VGS(th) | 2.0 V min - ensures robust turn-on with 3.3-V microcontroller GPIOs and avoids false triggering |
| tr/tf | 10–20 ns / 26–50 ns - minimizes switching losses in hard-switched topologies with <100 ns transition times |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–8 correspond to G, S, S, S, D, D, D, D per top-view marking and internal die layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; accepts 0–10 V logic-level signals; requires <1.27 Ω series resistance to damp ringing |
| 2, 3, 4 | Source | Power return path; tied directly to PCB ground plane; forms common reference for gate drive and load current |
| 5, 6, 7, 8 | Drain | High-side switch node; connects to input rail or transformer primary; shares thermal pad with PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| PWM-optimized switching | Low Qgd/Qgs ratio (0.86) and fast tr/tf reduce shoot-through risk and EMI in high-frequency converters |
| 175 °C junction rating | Enables use in sealed industrial drives or automotive under-hood modules without thermal throttling |
| TrenchFET® construction | Delivers 25% lower RDS(on) vs. planar MOSFETs of same die size, improving power density in space-constrained designs |
| Halogen-free & RoHS-compliant | Fulfills IEC 61249-2-21 and EU Directive 2002/95/EC requirements for green electronics manufacturing |
| Body diode with trr = 80 ns | Supports efficient synchronous rectification and reduces snubber losses in flyback and LLC resonant converters |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Step-down regulation from 24 V or 48 V bus to 5 V or 12 V for industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz PWM frequency. Use Value: Low RDS(on) and Qg minimize conduction and switching losses, achieving >94% efficiency at 6 A output. |
Use Scenario: H-bridge driver for 12–24 V brushed motors in automated valves and HVAC actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 7.5 A with PWM duty cycle control. Use Value: 175 °C TJ rating prevents thermal shutdown during stall conditions; SO-8 footprint simplifies layout routing. |
| LED Constant-Current Driver | Hot-Swap Controller |
|
Use Scenario: Constant-current dimming circuit for high-brightness LED arrays in signage and machine vision lighting. IC Role / Device Role / Timing Role: Series-pass switch modulated by analog or PWM signal to regulate LED string current. Use Value: Tight VGS(th) tolerance ensures consistent turn-on across temperature; low VSD minimizes forward drop in linear mode. |
Use Scenario: Inrush current limiter and fault protection in 12 V or 24 V backplane power distribution units. IC Role / Device Role / Timing Role: Main pass transistor in active OR-ing or hot-swap IC-controlled configuration. Use Value: Avalanche energy rating (EAR = 45 mJ) withstands transient overvoltage events during plug-in; SO-8 thermal mass absorbs surge energy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.022 Ω @ 10 V but higher Qg = 52 nC; SO-8 package with different pinout (G-D-S-S-D-D-D-S) | Higher gate drive power required; less suitable for >300 kHz switching without gate driver optimization | Prefer SI4486EY-T1-E3 when minimizing gate loss or matching existing SO-8 layout with G-S-S-S-D-D-D-D pin order |
| DMN6016LFG-7 | RDS(on) = 0.028 Ω @ 10 V; lower ID = 6.5 A; same SO-8 footprint and pinout | Limited to lower-power loads; reduced avalanche capability (EAR = 28 mJ) | Select DMN6016LFG-7 only if thermal budget permits higher RDS(on) and system does not require 45 mJ avalanche robustness |
Compared with IRF7470PBF and DMN6016LFG-7, SI4486EY-T1-E3 offers the best balance of low Qg, tight VGS(th), and high avalanche energy in a standard SO-8 layout-making it optimal for high-reliability, high-frequency industrial power stages where layout reuse and thermal headroom are critical.
Availability
SI4486EY-T1-E3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and LED lighting systems requiring stable component supply and long-term manufacturability.
Supply support for SI4486EY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si4486EY product line targets high-performance, thermally demanding power switching applications-including industrial automation, transportation, and renewable energy systems-where ruggedness and consistent parametric performance are essential.
FAQ
What is the maximum continuous drain current for SI4486EY-T1-E3 at 85 °C ambient?
The SI4486EY-T1-E3 supports 4.2 A continuous drain current at TA = 85 °C with no heatsink, based on its steady-state power dissipation limit of 1.1 W and RthJA = 85 °C/W. This rating assumes mounting on a 1" × 1" FR4 board per datasheet test condition. At higher ambient temperatures or with limited airflow, derating must follow the normalized thermal impedance curve in Figure 12 of the datasheet. SI4486EY-T1-E3 maintains safe operation within its 175 °C TJ limit under these conditions.
Is SI4486EY-T1-E3 suitable for use with 3.3-V microcontroller GPIOs?
Yes, SI4486EY-T1-E3 has a minimum gate threshold voltage of 2.0 V and guaranteed RDS(on) of 0.028 Ω at VGS = 6.0 V, making it compatible with 3.3-V logic-level drive when paired with a low-impedance gate driver or buffer. However, full 7.9 A current capability requires VGS ≥ 10 V; for 3.3-V-only systems, verify that load current stays within the 6.0 V RDS(on)-limited region (≤7.5 A). SI4486EY-T1-E3's low VGS(th) ensures reliable turn-on without floating gate issues.
Does SI4486EY-T1-E3 have avalanche capability, and how is it rated?
Yes, SI4486EY-T1-E3 is fully rated for repetitive avalanche operation with EAR = 45 mJ (duty cycle ≤ 1 %) and IAR = 30 A (L = 0.1 mH). This capability is production-tested and guaranteed per Vishay's qualification standards. The device can safely absorb inductive energy during switching transients or fault events in relay drivers, solenoid controls, and motor commutation circuits. SI4486EY-T1-E3's avalanche robustness exceeds many competing SO-8 MOSFETs in the same voltage class.
What is the thermal resistance from junction to foot (RthJF) for SI4486EY-T1-E3?
The maximum junction-to-foot (drain) thermal resistance for SI4486EY-T1-E3 is 21 °C/W under steady-state conditions, with a typical value of 17 °C/W. This parameter reflects heat transfer from the silicon die directly into the exposed drain pad and underlying PCB copper, independent of ambient convection. It enables accurate thermal modeling when using internal layer copper pours or external heatsinks attached to the drain pad. SI4486EY-T1-E3's low RthJF supports high-power density layouts where ambient cooling is limited.
How does the halogen-free status of SI4486EY-T1-E3 align with industry standards?
SI4486EY-T1-E3 complies with IEC 61249-2-21 for halogen-free printed wiring board materials and meets the RoHS Directive 2002/95/EC for lead-free construction. Its "-E3" suffix denotes lead-free and halogen-free packaging per Vishay's material declaration. No brominated flame retardants (BFRs), chlorinated flame retardants (CFRs), or antimony trioxide are used in the mold compound or terminations. SI4486EY-T1-E3 satisfies environmental compliance requirements for export to EU, Japan, and China without requiring additional substance declarations.
SI4486EY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4486EY-T1-E3 FAQ
1.How can I place an order for SI4486EY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4486EY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4486EY-T1-E3 reliable?
The price and inventory of SI4486EY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4486EY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4486EY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4486EY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4486EY-T1-E3?
SI4486EY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4486EY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4486EY-T1-E3?
For technical support, including SI4486EY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4486EY-T1-E3 requirements.
6.How does Aetrix verify that SI4486EY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4486EY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4486EY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4486EY-T1-E3?
All SI4486EY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4486EY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4486EY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4486EY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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