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Vishay Siliconix SI4486EY-T1-GE3
- Part No.:
- SI4486EY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4486EY-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 5.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,211
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Product details
Overview
SI4486EY-T1-GE3 from Vishay Siliconix is an N-channel 100-V TrenchFET® power MOSFET in SO-8 package, with RDS(on) = 0.025 Ω at VGS = 10 V, 7.9-A continuous drain current (TJ = 175 °C), and PWM-optimized switching performance. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor control stages.
For engineers reviewing the SI4486EY-T1-GE3 datasheet, SI4486EY-T1-GE3 pinout, SI4486EY-T1-GE3 application, or SI4486EY-T1-GE3 equivalent, key selection criteria include its 100-V VDS, 0.025-Ω on-resistance at 10-V gate drive, SO-8 thermal performance (RthJA = 70 °C/W steady-state), 175 °C max junction temperature, and halogen-free/RoHS-compliant construction.
Technical Context
This MOSFET employs Vishay's TrenchFET® process for low RDS(on) and fast switching, supporting pulse-width modulation in high-frequency power stages. Its gate threshold voltage (VGS(th)) is 2 V min, enabling robust turn-on with standard 5-V or 10-V logic-level drivers.
The device integrates a body diode with VSD = 0.8–1.2 V at IS = 3.1 A and exhibits Qg = 36–44 nC, Qgd = 8.6 nC, and tf = 26–50 ns - characteristics optimized for reduced switching losses in buck converters and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 80 V DC with margin for transients in industrial power supplies |
| RDS(on) | 0.025 Ω @ VGS = 10 V - enables ≤2 W conduction loss at 7.9 A, critical for thermally constrained SO-8 layouts |
| ID (continuous) | 7.9 A @ TJ = 175 °C - defines maximum steady-state current under worst-case thermal conditions |
| Qg | 36–44 nC - determines gate driver power requirement and influences switching speed in 100–500 kHz applications |
| TJ(max) | 175 °C - allows operation in sealed enclosures or high-ambient environments without derating below 85 °C ambient |
| VGS(th) | 2 V min - ensures reliable enhancement-mode turn-on with 3.3-V or 5-V microcontroller GPIOs |
| VSD | 0.8–1.2 V @ IS = 3.1 A - sets forward drop and reverse recovery energy in freewheeling paths |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–8 follow JEDEC MS-012AC outline; drain terminals occupy pins 1, 2, 3, 4, and 8; source on pins 5, 6, 7; gate on pin 3 (shared with drain) per top-view marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 8 | Drain (D) | High-side switching node; electrically tied to exposed thermal pad - must be connected to PCB ground plane or heatsink for RthJF = 17 °C/W |
| 5, 6, 7 | Source (S) | Power return path; forms low-impedance connection to output filter capacitor ground in buck converters |
| 3 (shared) | Gate (G) | Control input; requires <1.3 Ω series resistance to damp ringing due to Rg = 0.5–2.2 Ω internal gate resistance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.025 Ω RDS(on) in SO-8 - 30 % lower on-resistance than planar MOSFETs of same footprint |
| PWM-optimized switching | Qgd/Qgs ratio of ~0.86 reduces Miller-induced shoot-through risk in synchronous rectification |
| 175 °C maximum junction temperature | Permits full-rated current operation in automotive under-hood or industrial motor-drive enclosures |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for EU medical and consumer electronics |
Applications
| DC-DC Buck Converter | Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 12–48 V input to 3.3/5/12 V output conversion in telecom power modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency >92 % at 5 A. Use Value: 0.025 Ω RDS(on) cuts I²R loss by 75 % vs. 0.1 Ω diode, lowering thermal stress on SO-8 PCB layout. | Use Scenario: 24 V brushed DC motor control in factory automation actuators with PWM frequency ≥20 kHz. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, driven by isolated gate driver with 10-V output. Use Value: 175 °C TJ(max) and 40 A pulsed rating support 3× stall-current surges without thermal shutdown. |
| LED Driver Current Sink | Hot-Swap Controller |
Use Scenario: Constant-current dimmable LED string driver for architectural lighting with 36 V bus. IC Role / Device Role / Timing Role: Precision current-regulating pass element controlled by op-amp feedback loop. Use Value: Tight VGS(th) tolerance (2 V min) ensures stable turn-on across temperature, minimizing current drift. | Use Scenario: Inrush current limiting for 48 V backplane insertion in network equipment. IC Role / Device Role / Timing Role: Linear pass transistor in active OR-ing or hot-swap circuit with external current-sense amplifier. Use Value: 100 V VDS withstands load-dump transients up to 80 V, preventing catastrophic failure during plug-in events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.022 Ω @ 10 V but SO-8 package lacks exposed drain pad; RthJA = 85 °C/W (vs. 70 °C/W) | Lower conduction loss but higher thermal resistance limits sustained 7.9 A operation in compact layouts | Prefer SI4486EY-T1-GE3 where board space is constrained and thermal management relies on drain-pad soldering |
| DMN601WK-7 | VDS = 60 V only; RDS(on) = 0.024 Ω @ 10 V; same SO-8 footprint and halogen-free construction | Not suitable for 80 V transient-tolerant designs; limited to ≤48 V systems | Select SI4486EY-T1-GE3 when 100 V rating and 175 °C operation are mandatory for industrial reliability |
Compared with IRF7470PBF and DMN601WK-7, SI4486EY-T1-GE3 uniquely combines 100 V rating, 0.025 Ω on-resistance, exposed-drain SO-8 thermal design, and 175 °C junction rating - making it the only option among the three qualified for 48 V telecom power with 80 V surge immunity and high-temperature enclosure operation.
Availability
SI4486EY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and hot-swap controllers requiring stable component supply and long-term industrial lifecycle support.
Supply support for SI4486EY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si4486EY product line delivers TrenchFET® MOSFETs engineered for high-frequency switching power conversion, targeting industrial, telecom, and automotive subsystems where thermal robustness and low RDS(on) are critical.
FAQ
What is the maximum continuous drain current for SI4486EY-T1-GE3 at 85 °C ambient?
The SI4486EY-T1-GE3 supports 6.1 A continuous drain current at TA = 85 °C with proper PCB copper area (1" × 1" FR4). This rating assumes SO-8 mounting per Vishay's test condition and accounts for thermal resistance RthJA = 70 °C/W. At higher ambient temperatures or reduced copper, derating is required to maintain TJ ≤ 175 °C. The SI4486EY-T1-GE3 datasheet specifies this value in the Absolute Maximum Ratings table.
Does SI4486EY-T1-GE3 have a built-in body diode, and what is its forward voltage?
Yes, the SI4486EY-T1-GE3 includes an integrated body diode rated for 3.1 A continuous source current. Its forward voltage (VSD) is 0.8–1.2 V at IS = 3.1 A and VGS = 0 V, measured at 25 °C. This diode enables freewheeling operation in buck and flyback topologies. The SI4486EY-T1-GE3 datasheet confirms VSD in the Static Characteristics table.
Is SI4486EY-T1-GE3 pin-compatible with other SO-8 N-channel MOSFETs like Si4410DY?
No, SI4486EY-T1-GE3 is not pin-compatible with Si4410DY. While both use SO-8 packages, SI4486EY-T1-GE3 assigns drain to pins 1, 2, 3, 4, and 8, whereas Si4410DY uses different pin mapping (e.g., gate on pin 1). Substituting without layout verification risks short circuits. Always consult the SI4486EY-T1-GE3 pinout diagram before replacement.
What is the gate charge (Qg) of SI4486EY-T1-GE3, and how does it affect driver selection?
The SI4486EY-T1-GE3 has a total gate charge (Qg) of 36–44 nC at VDS = 50 V and VGS = 10 V. This value determines the peak current needed from the gate driver: for 100 ns rise time, ≥440 mA peak is required. Selecting a driver with sufficient IOUT and low output impedance prevents slow switching and excessive losses. The SI4486EY-T1-GE3 datasheet lists Qg in the Dynamic Characteristics table.
Can SI4486EY-T1-GE3 operate with 5-V gate drive in logic-level applications?
Yes, SI4486EY-T1-GE3 can operate with 5-V gate drive, delivering RDS(on) = 0.028 Ω at ID = 7.5 A - suitable for moderate-current logic-level switching. However, its VGS(th) minimum is 2 V, so 5-V drive provides adequate overdrive margin. For lowest on-resistance, 10-V drive is recommended. This behavior is confirmed in the SI4486EY-T1-GE3 Product Summary and Static Characteristics tables.
SI4486EY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4486EY-T1-GE3 FAQ
1.How can I place an order for SI4486EY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4486EY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4486EY-T1-GE3 reliable?
The price and inventory of SI4486EY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4486EY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4486EY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4486EY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4486EY-T1-GE3?
SI4486EY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4486EY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4486EY-T1-GE3?
For technical support, including SI4486EY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4486EY-T1-GE3 requirements.
6.How does Aetrix verify that SI4486EY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4486EY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4486EY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4486EY-T1-GE3?
All SI4486EY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4486EY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4486EY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4486EY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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